• Korean Journal of Materials Research
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• v.12 no.12
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• pp.962-966
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• 2002

The $SrBi_2$$Nb_2$$O_{9}$ (SBN) thin films were deposited with $SrNb_2$$O_{6}$ / (SNO) and $Bi_2$$O_3$ targets by co-sputtering method. For the growth of SBN thin films, we adopted the various power ratios of two targets; the power ratios of the SNO target to $Bi_2$$O_3$ target were 100 W : 20 W, 100 W : 25 W, and 100 W : 30 W during sputtering the SBN films. We found that the electrical properties of SBN films were greatly dependent on Bi content in films. The $Bi_2$Pt and $Bi_2$$O_3$ phase as second phases occurred at the films with excess Bi content greater than 2.4, resulting in poor ferroelectric properties. The best growth condition of the SBN films was obtained at the power ratio of 100 W : 25 W for the two targets. At this condition, the crystallinity and electrical properties of the films were improved at even low annealing temperature as $700^{\circ}C$ for 1h in oxygen ambient and the Sr, Bi and Nb component in the SBN films were about 0.9, 2.4, and 1.8 respectively. From the P-E and I-V curves for the specimen, the remnant polarization value ($2P_{r}$) of the SBN films was obtained about 6 $\mu$C/c $m^2$ at 250 kV/cm and the leakage current density of this thin film was $2.45$\times$10^{-7}$ $A/cm^2$ at an applied voltage of 3 V.V.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.21 no.5
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• pp.876-884
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• 2017

The current-voltage characteristics of Silicon(Si), Germanum(Ge), and hetero tunnel field-effect transistors(TFETs) with source-overlapped gate structure was investigated using TCAD simulations in terms of tunneling. A Si-TFET with gate oxide material $SiO_2$ showed the hump effects in which line and point tunneling appear simultaneously, but one with gate oxide material $HfO_2$ showed only the line tunneling due to decreasing threshold voltage and it shows better performance than one with gate oxide material $SiO_2$. Tunneling mechanism of Ge and hetero-TFETs with gate oxide material of both $SiO_2$ and $HfO_2$ are dominated by point tunneling, and showed higher leakage currents, and Si-TFET shows better performance than Ge and hetero-TFETs in terms of SS. These simulation results of Si, Ge, and hetero-TFETs with source-overlapped gate structure can give the guideline for optimal TFET structures with non-silicon channel materials.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.319-322
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• 2003

To match the charge induced by the insulators $CeO_2$ with the remanent polarization of ferro electric SBT thin films, areas of Pt/SBT/Pt (MFM) and those of $Pt/CeO_2/Si$ (MIS) capacitors were ind ependently designed. The area $S_M$ of MIS capacitors to the area $S_F$ of MFM capacitors were varied from 1 to 10, 15, and 20. Top electrode Pt and SBT layers were etched with for various area ratios of $S_M\;/\;S_F$. Bottom electrode Pt and $CeO_2$ layers were respectively deposited by do and rf sputtering in-situ process. SBT thin film were prepared by the metal orgnic decomposition (MOD) technique. $Pt(100nm)/SBT(350nm)/Pt(300nm)/CeO_2(40nm)/p-Si$ (MFMIS) gate structures have been fabricated with the various $S_M\;/\;S_F$ ratios using inductively coupled plasma reactive ion etching (ICP-RIE). The leakage current density of MFMIS gate structures were improved to $6.32{\times}10^{-7}\;A/cm^2$ at the applied gate voltage of 10 V. It is shown that in the memory window increase with the area ratio $S_M\;/\;S_F$ of the MFMIS structures and a larger memory window of 3 V can be obtained for a voltage sweep of ${\pm}9\;V$ for MFMIS structures with an area ratio $S_M\;/\;S_F\;=\;6$ than that of 0.9 V of MFS at the same applied voltage. The maximum memory windows of MFMIS structures were 2.28 V, 3.35 V, and 3.7 V with the are a ratios 1, 2, and 6 at the applied gate voltage of 11 V, respectively. It is concluded that ferroelectric gate capacitors of MFMIS are good candidates for nondestructive readout-nonvolatile memories.

• Journal of Sensor Science and Technology
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• v.1 no.2
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• pp.173-181
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• 1992

Tantalum pentoxide($Ta_{2}O_{5}$) thin films on p-type (100) silicon wafer were fabricated by RF reactive sputtering. Physical properties and structure of the specimens were examined by XRD and AES. From the C-V analysis, the dielectric constant of $Ta_{2}O_{5}$ films was in the range of 10-12 in the reactive gas atmosphere in which 10% of oxygen gas is mixed. The ratio of Ta : 0 was 1 : 2 and 1 : 2.49 by AES and RBS examination, respectively. The heat-treatment at $700^{\circ}C$ in $O_{2}$ ambient led to induce crystallization. When the heat-treatment temperature was $1000^{\circ}C$, the dielectric constant was 20.5 in $O_{2}$ ambient and 23 in $N_{2}$ ambient, respectively. The crystal structure of $Ta_{2}O_{5}$ film was pseudo hexagonal of ${\delta}-Ta_{2}O_{5}$. The flat band voltage shift(${\Delta}V_{FB}$) of the specimens and the leakage current density were decreased for higher oxygen mixing ratio. The maximum breakdown field was 2.4MV/cm at the oxygen mixing ratio of 10%. The $Ta_{2}O_{5}$ films will be applicable to hydrogen ion sensitive film and gate oxide material for memory device.

• Korean Security Journal
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• no.2
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• pp.99-123
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• 1999

Internet related crimes are a crime which is inter-related with high specialization ${\cdot}$ technicality ${\cdot}$ leakage of information ${\cdot}$ intellectual-offence and deviant behavior. Without the accurate countermeasure, we can't achieve the desired end. So we should find out multilateral and general measure. Always crimes go in advance of the measure, so the counter measures against, computer crime can not be final. Nevertheless, we can't be careless in making the measure, but we should always consider a counter measure. 1995. 12. 29. our country revised criminal law and consolidated direct provisions, especially on the computer-hacking. But, inspite of the revision, especially on the computer-hacking. But, inspite of the revision, we have many problems'. So, first of all, through the positive and empirical study, we should revise criminal law and computer crime related provisions systematically. As the aspects and techniques of internet related crimes are always changing with the development of computer technology, there will be many problems with principle of legality, when we apply the existing abstract provisions to the new crime. We can not be lazy in studying the emerging internet related crimes and taking concrete shape of the provision. And it will be a big help to that desirable to import the foreign provision without consideration of our reality. Without the positive and empirical study on internet related crimes, sometimes important crime will be out of reach of the punishment. Due to these day's development of computer and technology of communication, the personal computers are widely supplied and especially PC communication and exchange of the informations became the most important function. With the advent of internet, new aspects of crimes are appearing. Up to now, the fraud by using the computer or the interference in the execution of duty by the illegal operation of computer was the leading aspects of computer crime, but nowadays with the advent of internet, database crime or network crime like the computer hacking became the important aspects of internet related crimes. These new aspects of internet related crimes are defusing into domains of traditional crimes. Nevertheless to follow and punish the acts on the internet is not technically easy, and as it is emerging international shape, to settle it by international law is not that easy. Harmful acts in the information-oriented society are very diverse in kinds and aspects, and it is difficult to enumerate. The point is that among the new acts in the information-oriented society we should decide which acts are to be punished and which acts are not to be punished. It is needless to say that the criminal law should be the last resort. But owing to the characters of the characteristics of the information-oriented society, when the traditional standards can be applied, the question of what is the basis and how it can be applied in a concrete way is not settled. And if it cannot be applied, how can we make new standard is also an unsettled question.

• Journal of Sensor Science and Technology
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• v.9 no.1
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• pp.1-8
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• 2000

One of today's very critical and sensitive accurate accelerometer which can be used higher temperature than $200^{\circ}C$ and corrosive environment, is particularly demanded for automotive engine. Because silicon is a material of large temperature dependent coefficient, and the piezoresistors are isolated with p-n junctions, and its leakage current increase with temperature, the performance of the silicon accelerometer degrades especially after $150^{\circ}C$. In this paper, The temperature characteristic of a accelerometer using silicon on insulator (SOI) structure is studied theoretically, and compared with experimental results. The temperature coefficients of sensitivity and offset voltage (TCS and TCO) are related to some factors such as thermal residual stress, and are expressed numerically. Thermal stress analysis of the accelerometer has also been carried out with the finite-element method(FEM) simulation program ANSYS. TCS of this accelerometer can be reduced to control the impurity concentration of piezoresistors, and TCO is related to factors such as process variation and thermal residual stress on the piezoresistors. In real packaging, The avarage thermal residual stress in the center support structure was estimated at around $3.7{\times}10^4Nm^{-2}^{\circ}C^{-1}$ at sensing resistor. The simulated ${\gamma}_{pT}$ of the center support structure was smaller than one-tenth as compared with that of the surrounding support structure.

• Korean Journal of Food Science and Technology
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• v.31 no.2
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• pp.368-374
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• 1999

This study was designed to investigate effects of pulsed electric field (PEF) treatment on physiological changes of microbial cells, using domestically fabricated pilot scale PEF device. The effect of non-thermal PEF treatment on physiological characteristics of microorganisms was determined by salt resistance, the amount of UV absorbents, cell staining, recovery rate of defected cells, and changes in structure of cell membrane. Salt resistance of Escherichia coli, Bacillus subtilis and Rhodotorula minuta was examined after PEF treatment at 40 kV/cm, 84 pulse, $10{\mu}s$ pulse duration. Approximately $1\;log_{10}$ cell number of viable microorganisms was decreased by addition of salt. PEF treatment significantly increased the amount of UV absorbents at 260 and 280 nm because of leakage from damaged cell membrane by PEF treatment. Although three kinds of microorganisms treated by PEF were difficult to be observed due to their cell membrane damage, untreated cells were clearly observed by a microscope. PEF-treated R. minuta was not stained by methylene blue due to cell membrane defect. When E. coli, B. subtilis and R. minuta were cultured after PEF treatment, they showed 5, 4, and 8 hr longer lag phase, respectively, compared to control, but growth rates were not affected.

• Advances in pediatric surgery
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• v.11 no.2
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• pp.157-164
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• 2005

Esophageal atresia without tracheoesophageal fistula accounts for 7-11 % of all types of esophageal atresia and is very difficult to treat. In our hospital from 1990 to 2005, we operated upon 40 patients with esophageal atresia, and 6 had pure atresia. The preoperative characteristics, operative findings and post operative course of the six patients with pure atresia were analysed. Immediate gastrostomy was performed in all 6 patients. One patient had simultaneous cervical esophagostomy. Esophageal reconstruction procedures were transhiatal gastric pull up in 3 patients, esophagocologastrostomy utilizing left colon in 1, and transthoracic esophagoseophagostomy with esophageal bougination in 2. Postoperative complications were pneumonia, anastomosis leakage, and gastroesophageal reflux symptom. Conservative management was effective in all patients. A larger series of cases would be required to demonstrate the most effective treatment for this particular anomalous condition.

• The Journal of the Institute of Internet, Broadcasting and Communication
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• v.15 no.3
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• pp.169-173
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• 2015

This study is to predict the life exponent by measuring, over 7 years, the insulation resistance of high-voltage cables in 22 kV operation for 13 years. We found out the lifetime index in order to determine the time-dependent trend of deteriorating performance of power cables. The insulation resistances decreased according to elapsed time. We found that: the initial measurements of the cable systems were in agreement with the deterioration properties of the Arrhenius Law. By analyzing the life curve of the cable system, we also verified that the value of the life exponent (n) in the v-t characteristics defined by Weibull distribution has values from 10 to 11. When designing the cable system, the initial value of life exponent was chosen as 9 without any grounding. We have verified that the theoretical grounding based on the design safety of n=9 was actually the best one available. In the short term, we apply our research result to the diagnosis and evaluation of the power cables. In the long run, however, we plan to reduce the cost of the installation and management of cable systems in operation at power stations.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.19 no.10
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• pp.1096-1103
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• 2008

This paper proposes an individual order predistortion linearizer using intermodulation distortion(IMD) generator for cancellation the third and the fifth IMD of power amplifier. The IMD generator for controlling the third and the fifth IMD consist of common Emitter amplifier and Schottky diode. These signals are generated by series feedback of Schottky diode to obtain the inverse AM/AM and AM/PM characteristics of power amplifier. The individual order predistorters are consisted of individual IMD generator, power splitter and combiner. The test results show that the third and the fifth IMD can be improved by a maximum 13.5 dB and 0.9 dB in case of CW 2-tone signals. Also, the Adjacent Channel Leakage Ratio(ACLR) can be improved 2.3 dB, 2.5 dB at ${\pm}0.885$ MHz, ${\pm}1.23$ MHz offset frequency for CD-MA IS-95 2FA signals.