• Nuclear Engineering and Technology
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• v.53 no.12
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• pp.4106-4113
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• 2021

Rare earth doped barium tellurite glasses were synthesised and explored for their radiation shielding applications. All the samples showed good thermal stability with values varying between 101 ℃ and 135 ℃ based on dopants. Structural properties showed the dominance of matrix elements compared to rare earth dopants in forming the bridging and non-bridging atoms in the network. Bandgap values varied between 3.30 and 4.05 eV which was found to be monotonic with respective rare earth dopants indicating their modification effect in the network. Various radiation shielding parameters like linear attenuation coefficient, mean free path and half value layer were calculated and each showed the effect of doping. For all samples, LAC values decreased with increase in energy and is attributed to photoelectric mechanism. Thulium doped glasses showed the highest value of 1.18 cm^-1 at 0.245 MeV for 2 mol.% doping, which decreased in the order of erbium, holmium and the base barium tellurite glass, while half value layer and mean free paths showed an opposite trend with least value for 2 mol.% thulium indicating that thulium doped samples are better attenuators compared to undoped and other rare earth doped samples. Studies indicate an increased level of thulium doping in barium tellurite glasses can lead to efficient shielding materials for high energy radiation.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.28 no.1
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• pp.28-37
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• 2018

In order to study the NTC thermistor that can be fired at low temperature, the influence of the lead free glass frit and $RuO_2$ addition on the electrical properties of the NTC thermistor of $Mn_{1.85}Ni_{0.25}Co_{0.9}O_4$ basic composition was studied. The sintering characteristics of the specimen sintered at $1000^{\circ}C$ with 10 wt% frit added to the basic NTC composition were similar to those of the specimen sintered at $1200^{\circ}C$ without frit. However, as the amount of frit increased, the electrical resistivity and B constant were increased. In order to reduce the resistance, NTC thermistor was prepared by adding 0, 2, and 5 wt% of $RuO_2$ to the composition containing 10 wt% of frit and sintered at $1000{\sim}1200^{\circ}C$, and sintering and electrical properties were measured. The electrical resistivity and the B constant tended to decrease with increasing $RuO_2$ content. However, the resistivity was the lowest at sintering temperature of $1000^{\circ}C$ and the resistance increased with increasing sintering temperature after 5 wt% $RuO_2$ addition. The NTC thermistor sintered at $1000^{\circ}C$ with 10 wt% frit and 5 wt% $RuO_2$ in the composition of NTC showed similar electrical properties and sintering characteristics when sintered at $1200^{\circ}C$ without added frit.

• Journal of the Microelectronics and Packaging Society
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• v.19 no.2
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• pp.17-28
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• 2012

It is known that thermo-mechanical properties of solder material and molding compound in WB-PBGA packages are considerably affected by not only temperature but elapsed time. In this paper, finite element analysis (FEA) taking material nonlinearity into account was performed for more reliable prediction on deformation behavior of a lead-free WB-PBGA package, and the results were compared with experimental results from moire interferometry. Prior to FEA on the WB-PBGA package, it was carried out for two material layers consisting of molding compound and substrate in terms of temperature and time-dependent viscoelastic effects of molding compound. Reliable deformation analysis for temperature change was then accomplished using viscoplastic properties for solder ball and viscoelastic properties for molding compound, and the analysis was also verified with experimental results. The result showed that the deformation of WB-PBGA packages was strongly dependent on material model of molding compound; thus, temperature and time-dependent viscoelastic behavior must be considered for the molding compound analysis. In addition, viscoelastic properties of B-type molding compound having comparatively high glass transition temperature of $135^{\circ}C$ could be recommended for reliable prediction on deformation of SAC lead-free WB-PBGA packages.

• Nuclear Engineering and Technology
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• v.55 no.3
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• pp.1061-1070
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• 2023

Over the last few years, lead-free inorganic metal perovskites have gained impressive ground in empowering satellites in space exploration owing to their material stability and performance evolution under extreme space environments. The present work has examined the versatility of eight such perovskites as space radiation shielding materials by computing their photon, charged particles and neutron interaction parameters. Photon interaction parameters were calculated for a wide energy range using PAGEX software. The ranges of heavy charged particles (H, He, C, N, O, Ne, Mg, Si and Fe ions) in these perovskites were estimated using SRIM software in the energy range 1 keV-10 GeV, and that of electrons was computed using ESTAR NIST software in the energy range 0.01 MeV-1 GeV. Further, the macroscopic fast neutron removal cross-sections were also calculated to estimate the neutron shielding efficiencies. The examined shielding parameters of the perovskites varied depending on the radiation type and energy. Among the selected perovskites, Cs₂TiI₆ and Ba₂AgIO₆ displayed superior photon attenuation properties. A 3.5 cm thick Ba₂AgIO₆-based shield could reduce the incident radiation intensity to half its initial value, a thickness even lesser than that of Pb-glass. Besides, CsSnBr₃ and La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ displayed the highest and lowest range values, respectively, for all heavy charged particles. Ba₂AgIO₆ showed electron stopping power (on par with Kovar) better than that of other examined materials. Interestingly, La_0.8Ca_0.2Ni_0.5Ti_0.5O₃ demonstrated neutron removal cross-section values greater than that of standard neutron shielding materials - aluminium and polyethylene. On the whole, the present study not only demonstrates the employment prospects of eco-friendly perovskites for shielding space radiations but also suggests future prospects for research in this direction.

• Journal of radiological science and technology
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• v.26 no.2
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• pp.37-42
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• 2003

Purpose : Computed tomographic equipment is essential for diagnosis by means of radiation. With passage of time and development of science computed tomographic was developed time and again and in future examination by means of this equipment is expected to increase. In this connection these authors measured rate of scatter ray generation at front of lead glass for patients within control room of computed tomographic equipment room and outside of entrance door for exit and entrance of patients and attempted to ind out method for minimizing exposure to scatter ray. Material and Method : From November 2001 twenty five units of computed tomographic equipments which were already installed and operation by 13 general hospitals and university hospitals in Seoul were subjected to this study. As condition of photographing those recommended by manufacturer for measuring exposure to sauter ray was use. At the time objects used DALI CT Radiation Dose Test Phantom fot Head (${\oint}16\;cm$ Plexglas) and Phantom for Stomache(${\oint}32\;cm$ Plexglas) were used. For measurement of scatter ray Reader (Radiation Monitor Controller Model 2026) and G-M Survey were used to Survey Meter of Radical Corporation, model $20{\times}5-1800$, Electrometer/Ion Chamber, S/N 21740. Spots for measurement of scatter ray included front of lead glass for patients within control room of computed tomographic equipment room which is place where most of work by gradiographic personnel are carried out and is outside of entrance door for exit and entrance of patients and their guardians and at spot 100 cm off from isocenter at the time of scanning the object. The results : Work environment within computed tomography room which was installed and under operation by each hospital showed considerable difference depending on circumstances of pertinent hospitals and status of scatter ray was as follows. 1) From isocenter of computed tomographic equipment to lead glass for patients within control room average distance was 377 cm. At that time scatter ray showed diverse distribution from spot where no presence was detected to spot where about 100 mR/week was detected. But it met requirement of weekly tolerance $2.58{\times}10^{-5}\;C/kg$(100 mR/week). 2) From isocenter of computed tomographic equipment to outside of entrance door where patients and their guardians exit and enter was 439 cm in average, At that time scatter ray showed diverse distribution from spot where almost no presence was detected to spot with different level but in most of cases it satisfied requirement of weekly tolerance of $2.58{\times}10^{-6}\;C/kg$(100 mR/week). 3) At the time of scanning object amount of scatter ray at spot with 100 cm distance from isocenter showed considerable difference depending on equipments. Conclusion : Use of computed tomographic equipment as one for generation of radiation for diagnosis is increasing daily. Compared to other general X-ray photographing field of diagnosis is very high but there is a high possibility of exposure to radiation and scatter ray. To be free from scatter ray at computed tomographic equipment room even by slight degree it is essential to secure sufficient space and more effort should be exerted for development of variety of skills to enable maximum photographic image at minimum cost.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.100-101
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• 2012

The plasma damage free and room temperature processedthin film deposition technology is essential for realization of various next generation organic microelectronic devices such as flexible AMOLED display, flexible OLED lighting, and organic photovoltaic cells because characteristics of fragile organic materials in the plasma process and low glass transition temperatures (Tg) of polymer substrate. In case of directly deposition of metal oxide thin films (including transparent conductive oxide (TCO) and amorphous oxide semiconductor (AOS)) on the organic layers, plasma damages against to the organic materials is fatal. This damage is believed to be originated mainly from high energy energetic particles during the sputtering process such as negative oxygen ions, reflected neutrals by reflection of plasma background gas at the target surface, sputtered atoms, bulk plasma ions, and secondary electrons. To solve this problem, we developed the NBAS (Neutral Beam Assisted Sputtering) process as a plasma damage free and room temperature processed sputtering technology. As a result, electro-optical properties of NBAS processed ITO thin film showed resistivity of $4.0{\times}10^{-4}{\Omega}{\cdot}m$ and high transmittance (>90% at 550 nm) with nano- crystalline structure at room temperature process. Furthermore, in the experiment result of directly deposition of TCO top anode on the inverted structure OLED cell, it is verified that NBAS TCO deposition process does not damages to the underlying organic layers. In case of deposition of transparent conductive oxide (TCO) thin film on the plastic polymer substrate, the room temperature processed sputtering coating of high quality TCO thin film is required. During the sputtering process with higher density plasma, the energetic particles contribute self supplying of activation & crystallization energy without any additional heating and post-annealing and forminga high quality TCO thin film. However, negative oxygen ions which generated from sputteringtarget surface by electron attachment are accelerated to high energy by induced cathode self-bias. Thus the high energy negative oxygen ions can lead to critical physical bombardment damages to forming oxide thin film and this effect does not recover in room temperature process without post thermal annealing. To salve the inherent limitation of plasma sputtering, we have been developed the Magnetic Field Shielded Sputtering (MFSS) process as the high quality oxide thin film deposition process at room temperature. The MFSS process is effectively eliminate or suppress the negative oxygen ions bombardment damage by the plasma limiter which composed permanent magnet array. As a result, electro-optical properties of MFSS processed ITO thin film (resistivity $3.9{\times}10^{-4}{\Omega}{\cdot}cm$, transmittance 95% at 550 nm) have approachedthose of a high temperature DC magnetron sputtering (DMS) ITO thin film were. Also, AOS (a-IGZO) TFTs fabricated by MFSS process without higher temperature post annealing showed very comparable electrical performance with those by DMS process with $400^{\circ}C$ post annealing. They are important to note that the bombardment of a negative oxygen ion which is accelerated by dc self-bias during rf sputtering could degrade the electrical performance of ITO electrodes and a-IGZO TFTs. Finally, we found that reduction of damage from the high energy negative oxygen ions bombardment drives improvement of crystalline structure in the ITO thin film and suppression of the sub-gab states in a-IGZO semiconductor thin film. For realization of organic flexible electronic devices based on plastic substrates, gas barrier coatings are required to prevent the permeation of water and oxygen because organic materials are highly susceptible to water and oxygen. In particular, high efficiency flexible AMOLEDs needs an extremely low water vapor transition rate (WVTR) of $1{\times}10^{-6}gm^{-2}day^{-1}$. The key factor in high quality inorganic gas barrier formation for achieving the very low WVTR required (under ${\sim}10^{-6}gm^{-2}day^{-1}$) is the suppression of nano-sized defect sites and gas diffusion pathways among the grain boundaries. For formation of high quality single inorganic gas barrier layer, we developed high density nano-structured Al2O3 single gas barrier layer usinga NBAS process. The NBAS process can continuously change crystalline structures from an amorphous phase to a nano- crystalline phase with various grain sizes in a single inorganic thin film. As a result, the water vapor transmission rates (WVTR) of the NBAS processed $Al_2O_3$ gas barrier film have improved order of magnitude compared with that of conventional $Al_2O_3$ layers made by the RF magnetron sputteringprocess under the same sputtering conditions; the WVTR of the NBAS processed $Al_2O_3$ gas barrier film was about $5{\times}10^{-6}g/m^2/day$ by just single layer.