• Title/Summary/Keyword: Layered oxide

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Improvement in the negative bias stability on the water vapor permeation barriers on Hf doped $SnO_x$ thin film transistors

  • Han, Dong-Seok;Mun, Dae-Yong;Park, Jae-Hyeong;Gang, Yu-Jin;Yun, Don-Gyu;Sin, So-Ra;Park, Jong-Wan
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2012.05a
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    • pp.110.1-110.1
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    • 2012
  • Recently, advances in ZnO based oxide semiconductor materials have accelerated the development of thin-film transistors (TFTs), which are the building blocks for active matrix flat-panel displays including liquid crystal displays (LCD) and organic light-emitting diodes (OLED). However, the electrical performances of oxide semiconductors are significantly affected by interactions with the ambient atmosphere. Jeong et al. reported that the channel of the IGZO-TFT is very sensitive to water vapor adsorption. Thus, water vapor passivation layers are necessary for long-term current stability in the operation of the oxide-based TFTs. In the present work, $Al_2O_3$ and $TiO_2$ thin films were deposited on poly ether sulfon (PES) and $SnO_x$-based TFTs by electron cyclotron resonance atomic layer deposition (ECR-ALD). And enhancing the WVTR (water vapor transmission rate) characteristics, barrier layer structure was modified to $Al_2O_3/TiO_2$ layered structure. For example, $Al_2O_3$, $TiO_2$ single layer, $Al_2O_3/TiO_2$ double layer and $Al_2O_3/TiO_2/Al_2O_3/TiO_2$ multilayer were studied for enhancement of water vapor barrier properties. After thin film water vapor barrier deposited on PES substrate and $SnO_x$-based TFT, thin film permeation characteristics were three orders of magnitude smaller than that without water vapor barrier layer of PES substrate, stability of $SnO_x$-based TFT devices were significantly improved. Therefore, the results indicate that $Al_2O_3/TiO_2$ water vapor barrier layers are highly proper for use as a passivation layer in $SnO_x$-based TFT devices.

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Electrochemical Behavior and Morphology of Anodic Titanium Oxide Films (양극산화에 의한 티타늄 산화피막의 전기화학적 거동과 형상)

  • Byeon K.J.;Kim C.S.;Zhu Xiaolong;Kim K.H.
    • Journal of Biomedical Engineering Research
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    • v.21 no.3 s.61
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    • pp.273-277
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    • 2000
  • The galvanostatic anodization of commercially Pure titanium plate (c.p.Ti, grade 2) was investigated in various concentrations of aqueous $H_3PO_4$ from 0.05M to 0.7M. The surfaces of anodic oxide films, formed by the current density in the range between 0.3 and $l.0 A/dm^2$. were analyzed by SEM and XRD. The voltage-time (V-T) curves displayed an initial linear part and a subsequent parabolic part, and the initial slopes increased with an increase in the current density in 0.05M $H_3PO_4$. As the concentration of the electrolyte increased, the V-T corves exhibit no change but the final voltage decreased. The anodic oxide film of titanium developed from fine grains to snowflake-like grains in a layered structure with an increase in the concentration of the electrolyte and current density. Sparking at the interface of the oxide/electrolyte accompanied the local deposition and dissolution of the oxide film through discharging. The crystallinity of the anodic oxide film increased with the anodizing voltage and decreased with an increase in the concentration of the electrolyte.

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Current Status of SOFC Materials and Processing Core Technology (고체산화물 연료전지 소재공정 요소기술 개발 현황)

  • Lee, Jong-Ho;Son, Jiwon;Kim, Heryong;Kim, Byong-Kook;Lee, Hae-Weon
    • 한국신재생에너지학회:학술대회논문집
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    • 2010.06a
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    • pp.123.1-123.1
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    • 2010
  • The solid oxide fuel cell (SOFC) has attracted great deal of attention due to its high electrical efficiency, high waste-heat utilization, fuel flexibility, and application versatility. However, SOFC technology is still not matured enough to fulfill the practical requirements for commercialization. Therefore, all the research and development activities are mainly focused on a development of practically viable SOFCs with higher performance and better reliability. We were successful in fabricating high-performance anode-supported unit cells by employing hierarchically controlled multi-layered electrodes for both structural reliability and high performance. In addition, a novel composite sealing gasket made it possible to achieve excellent sealing integrity even with considerable surface irregularities in a multi-cell planar arrayed stack.

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Fabrication of multi-layered electrostatic lens by mixed micromachining technology (혼합 마이크로머시닝기술을 이용한 다층전극구조의 정전렌즈 제작)

  • 이영재;전국진
    • Journal of the Korean Institute of Telematics and Electronics D
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    • v.35D no.9
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    • pp.48-53
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    • 1998
  • We have fabricated electrostatic lens with novel structure by mixing surface- and bulk-micromachining technology. Polysilicon was used for both the structure and sacrificial layer, and the structure layer was passivated with thermal oxide in order not to be attacked during the silicon wet etching. Compared with conventional electrostatic lens used in microcolumn, this device has the advantages in ; 1) hole alignment, throughput, reliability, damage of lens, 2) the possibility of arrayed lithography through the integration of microcolumn.

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Electrical properities of oxynitride film by PECVD (PECVD에 의해 형성된 oxynitride막의 전기적 특성)

  • 최현식;배성식;서용진;김창일;최동진;장의구
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1993.11a
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    • pp.97-102
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    • 1993
  • According as the high integrity of the semi conductor devices is definited required, the concern on the multi-layered wiring, and three-dimensional devices is growing these days. Therefore, plasma-enhanced chemical vapored deposition(PECVD) enables low-teperature process and is widely used, but it causes the instability of the devices due to a lot of impurities within the film. The PECVD oxynitride was formed by changing the gas ratio of (N$_2$O) to (N$_2$+NH$_3$). It's contained a small portion of hydrogen, had higher refrctive index and capacitance than oxide, and showed the capacitance increasement and the chemical stabi1ity. This is caused by nitrogen distribution increase of the interface lather than within the film.

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Ballistic Resistance of an Armor Ceramic Structure against a Shaped Charge Jet As a Function of Penetration Depth

  • Hyunho Shin;Lee, Chang-Hyun;Wan Sung
    • The Korean Journal of Ceramics
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    • v.5 no.3
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    • pp.270-277
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    • 1999
  • The ballistic capability of an alumina-rich oxide armor ceramic against a shaped jet was characterized as a function of penetration depth in a layered target structure. The penetration resistance of the ceramic, based upon the determination of penetration velocity, was not equally realized throughout the depth of penetration. It was abnormally low at an early stage of penetration, followed by a sudden increase to reach ~16GPa thereafter. There was no apparent change in such a profile with respect to the lateral size of the specimen. Based upon 2-D flash x-ray radiography and 3-D Hull code simulation, the feasibility of forming a pressure-induced predamnaged zone in front of the jet tip was speculated to foster an increased penetration velocity in the initial stage penetration, resulting in the diminished penetration resistance. The disappearance of such a predamaged zone with penetration was interpreted to restore the resistance of the ceramic in the later penetration stage.

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Design and Simulation of Tunable Bandpass Filters Using Ferroelectric Films for Wireless Communication Systems

  • Mai Linh;Dongkyu Chai;Tuan, Le-Minh;Giwan Yoon
    • Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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    • 2002.05a
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    • pp.523-526
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    • 2002
  • This paper presents the simulation of Au / $Ba_{x}$S $r_{1-x}$ Ti $O_3$(BSTO) / Magnesium oxide (MgO) multi-layered and electrically tunable band-pass filters (BPFs) by using high frequency structure simulator (HFSS). This model is a two-pole microstrip edge coupled filter. The filter was designed fur a center frequency about 5.8 GHz. The tunabillity of the filter is achieved using the nonlinear dc electric-field dependence on the relative dielectric constant of BSTO frroelectric thin film. This work seems very promising for future wireless communication systems....

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Synthesis and Characterization of New Macroporous SnO2 Foams

  • Choi, Moon-Hyung;Paek, Seung-Min
    • Bulletin of the Korean Chemical Society
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    • v.34 no.5
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    • pp.1388-1390
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    • 2013
  • Macroporous $SnO_2$ foam was successfully synthesized via a simple soft-chemical route by hybridization between alkylamine and tin(IV) oxide. According to X-ray diffraction (XRD) analysis, the as-prepared $SnO_2$ foam had a highly ordered lamella structure along the crystallographic c-axis, which transformed to a rutile phase after thermal treatment at $300^{\circ}C$. X-ray absorption spectroscopy (XAS) at the Sn K-edge revealed that $SnO_2$ particles in the hybrid material maintained their nanosized structure after hybridization with alkylamine. Scanning electron microscope (SEM) images clearly showed that the as-prepared $SnO_2$ foam had a macroporous structure. This synthetic route can be extended to the development of open frameworks with good electrochemical properties in battery applications.

Magnetic properties of $Mn^{+2}$ in Fe/MnO multilayers (Fe/MnO 다층박막에서의 $Mn^{+2}$의 자성연구)

  • 허재혁;채동훈;박성렬;이동렬;박수현;정윤희;전인준;김동언;이기봉
    • Journal of the Korean Vacuum Society
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    • v.8 no.3A
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    • pp.213-217
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    • 1999
  • Fe/MnO multilayers with different bilayer thicknesses were grown by pulsed laser deposition method. Grazing incidence X-ray reflectivity results showed obvious multilayer Bragg peaks implying highly layered samples and, through their analysis, some structural parameters were quantiatively estimated. From the X-ray diffraction peak corresponding to MnO(111), Mn-oxide turned out to be dominantly MnO. To characterize the magnetic properties of $Mn^{+2}$, XMCD were carried out. Magnetic moments of MnO near interfaces were ordered in the opposite direction to those of Fe.

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Effect of annealing on the electrical and optical properties of ZTO/GZO double-layered TCO films deposited by DC, RF magnetron co-sputtering (DC, RF 마그네트론 코스퍼터링법으로 증착한 ZTO/GZO 투명전도성막의 열처리 조건이 박막의 물성에 미치는 영향)

  • Kim, Min-Je;Song, Pung-Geun
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2012.05a
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    • pp.207-208
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    • 2012
  • GZO( Ga-doped ZnO) 및 ZTO (zinc tin Oxide) 박막을 DC, RF magnetron sputtering 공정을 이용하여 증착한 후, 대기 및 진공상태에서 200, $300^{\circ}C$ 조건으로 30분 동안 열처리하였다. ZTO/GZO 박막의 전기적 특성은 ZTO 층과 GZO 층의 두께 비에 의존함을 확인 할 수 있었다. 본 연구에서는 GZO단일 박막과 ZTO/GZO double layer 박막의 열처리 온도에 따른 구조적, 전기적, 광학적 특성을 비교검토 하였다.

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