• 전자공학회논문지A
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• 제31A권5호
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• pp.113-120
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• 1994

Silicon flow sensor that can detect the velocity and direction of air flow was designed and fabricated by integrated circuit process and bulk micromachining technique. The flow sensor consists of three-layered dielectric diaphragm, a heater at the center of the diaphragm, and four thermopiles surrounding the heater at each side of diaphragm as sensing elements. This diaphragm structure contributes to improve the sensitivity of the sensor due to excellent thermal isolation property of dielectric materials and their tiny thickness. The flow sensor has good axial symmetry to sense 2-D air flow with the optimized sensing position in the proposed structure. The sensor is fabricated using CMOS compatible process followed by the anisotropic etching of silicon in KOH and EDP solutions to form I$\mu$ m thick dielectric diaphragm as the last step. TCR(Temperature Coefficient of Resistance) of the heater of the fabricated sensors was measured to calculate the operating temperature of the heater and the output voltage of the sensor with respect to flow velocity was also measured. The TCR of the polysilicon heater resistor is 697ppm/K, and the operating temperature of the heater is 331$^{\circ}C$ when the applied voltage is 5V. Measured sensitivity of the sensor is 18.7mV/(m/s)$^{1/2}$ for the flow velocity of smaller than 10m/s.

• 한국진공학회:학술대회논문집
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• 한국진공학회 1999년도 제17회 학술발표회 논문개요집
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• 한국수소및신에너지학회논문집
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• 제22권1호
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• pp.77-82
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• 2011

In this study, a metal-supported SOFC was fabricated using a relatively cheap and simple process. The adhesion process between ceramic cell and metal support was performed in high temperature over $1400^{\circ}C$ and the deformation of large metal-supported cell happened in this process. Using bi-layered metal support fabricated by diffusion bonding, the deformation of the metal-supported cell can be minimized and the sealing efficiency of anode and cathode was improved. The flatness of the cell was improved by over 20% and the maximum power density of over 0.5 $Wcm^{-2}$ was obtained at the operation condition of $800^{\circ}C$.

• 한국세라믹학회지
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• 제42권4호
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• pp.219-223
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• 2005

A promising capacitor, which has conformable step coverage and good uniformity of thickness and composition, is needed to manufacture high-density non-volatile FeRAM capacitors with a stacked cell structure. In this study, ferroelectric $Bi_{3.61}Nd_{0.39}Ti_3O_{12}$ (BNdT) thin films were prepared on $Pt(111)/TiO_2/SiO_2/Si$ substrates by the liquid delivery system MOCVD method. In these experiments, $Bi(ph)_{3}$, $Nd(TMHD)\_{3}$ and $Ti(O^iPr)_{2}(TMHD)_{2}$ were used as the precursors and were dissolved in n-butyl acetate. The BNdT thin films were deposited at a substrate temperature and reactor pressure of approximately $600^{\circ}C$ and 4.8 Torr, respectively. The microstructure of the layered perovskite phase was observed by XRD and SEM. The remanent polarization value (2Pr) of the BNdT thin film was $31.67\;{\mu}C/cm^{2}$ at an applied voltage of 5 V.

• 한국세라믹학회지
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• 제50권6호
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• pp.378-383
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• 2013

Continuous fiber-reinforced ceramic matrix composites (CFCCs) have a complex distribution of porosity, consisting of interfiber micro pores and interbundle/interply macro pores. Owing to the complex geometry of the pores and fiber architecture, it is difficult to obtain representative microstructural features throughout the specimen volume with conventional, destructive ceramographic approaches. In this study, we introduce X-ray computed microtomography (X-ray ${\mu}CT$) to nondestructively analyze the microstructures of disk shaped and tubular $SiC_f$/SiC composites fabricated by the chemical vapor infiltration (CVI) method. The disk specimen made by stacking plain-woven SiC fabrics exhibited periodic, large fluctuation of porosity in the stacking direction but much less variation of porosity perpendicular to the fabric planes. The X-ray ${\mu}CT$ evaluation of the microstructure was also effectively utilized to improve the fabrication process of the triple-layered tubular SiC composite.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 1988년도 추계학술대회 논문집
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• pp.54-57
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• 1988

A film is fabricated by depositing several slices ultra thin films on a slide glass. The UV-absorbance outcomed on a multi-layered bulky ultra thin film with (N-docosyl pyridinium)-TCNQ (1:2) complex results tat the quantity of UV-absorbances becomes more linearly according to the number of layer becomes higher. In addition, it is found that the capacitance of this film gets smaller as the number of layer gets higher. Finally, the conductivity of this film is measured by the direction of the long axis of the TCNQ radical anion, and is resulted in a remarkably low value (about 1.66∼3.78 x 10$\^$-14/S/cm).

• 한국재료학회지
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• 제14권5호
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• pp.368-373
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• 2004

To improve the conventional cathode-supported tubular solid oxide fuel cell (SOFC) from the viewpoint of low cell power density, expensive fabrication process and high operation temperature, the anode-supported tubular solid oxide fuel cell was investigated. The anode tube of Ni-8mol% $Y_2$O$_3$-stabilized $ZrO_2$ (8YSZ) was manufactured by extrusion process, and, the electrolyte of 8YSZ and the multi-layered cathode of $LaSrMnO_3$(LSM)ILSM-YSZ composite/$LaSrCoFeO_3$ were coated on the surface of the anode tube by slurry dip coating process, subsequently. Their cell performances were examined under gases of humidified hydrogen with 3% water and air. In the thermal cycle condition of heating and cooling rates with $3.33^{\circ}C$/min, the anode-supported tubular cell showed an excellent resistance as compared with the electrolyte-supported planar cell. The optimum hydrogen flow rate was evaluated and the air preheating increased the cell performance due to the increased gas temperature inside the cell. In long-term stability test, the single cell indicated a stable performance of 300 mA/$\textrm{cm}^2$ at 0.85 V for 255 hr.

• 한국분말야금학회:학술대회논문집
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• 한국분말야금학회 2006년도 Extended Abstracts of 2006 POWDER METALLURGY World Congress Part 1
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• pp.533-534
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. All XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050\;^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050\;^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5kV. From these results, a BLT ceramic target for plused laser deposition (PLD) system was successfully fabricated.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 하계학술대회 논문집 Vol.8
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• pp.240-241
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• 2007

In general, high temperature superconducting coated conductors have intermediary buffers layer consisting of seed, diffusion barrier and cap layers. Simplification of the oxide materials buffer architecture in the fabrication of high temperature superconducting coated conductors is required because the deposition of multi-layers buffer architecture leads to a longer manufacturing time and a higher cost process of coated conductors. Thus, single buffer layer deposition seems to be important for practical coated conductor manufacturing process. In this study, a single gradient layered buffer deposition process of YZO for low cost coated conductors has been tried using DC reactive sputtering technique. About several thick YZO gradient single buffer layers deposited by DC co-sputtering process were found to act as a diffusion layer.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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• pp.276-277
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• 2006

1mm-thick BLT ceramics were sintered in accordance with a bulk ceramic fabrication process. AII XRD peaks detected in the sintered ceramics were indexed as the Bi-layered perovskite structure without secondary phases. Density was increased with increasing the sintering temperature up to $1050^{\circ}C$ and the maximum value was about 98% of the theoretical density. The remanent polarization (2Pr) value of BLT ceramic sintered at $1050^{\circ}C$ was approximately $6.5\;{\mu}C/cm^2$ at the applied voltage of 4.5 kV. The calculated electromechanical coupling factor ($k_t$) of it was about 5% and the mechanical quality factor (Qm) was about 2200. From these results, a BLT ceramic target for pulsed laser deposition (PLD) system was successfully fabricated.