• Title/Summary/Keyword: Layer-by-layer

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Fabrication of Poly Seed Layer for Silicon Based Photovoltaics by Inversed Aluminum-Induced Crystallization (역 알루미늄 유도 결정화 공정을 이용한 실리콘 태양전지 다결정 시드층 생성)

  • Choi, Seung-Ho;Park, Chan-Su;Kim, Shin-Ho;Kim, Yang-Do
    • Korean Journal of Materials Research
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    • v.22 no.4
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    • pp.190-194
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    • 2012
  • The formation of high-quality polycrystalline silicon (poly-Si) on relatively low cost substrate has been an important issue in the development of thin film solar cells. Poly-Si seed layers were fabricated by an inverse aluminum-induced crystallization (I-AIC) process and the properties of the resulting layer were characterized. The I-AIC process has an advantage of being able to continue the epitaxial growth without an Al layer removing process. An amorphous Si precursor layer was deposited on Corning glass substrates by RF magnetron sputtering system with Ar plasma. Then, Al thin film was deposited by thermal evaporation. An $SiO_2$ diffusion barrier layer was formed between Si and Al layers to control the surface orientation of seed layer. The crystallinity of the poly-Si seed layer was analyzed by Raman spectroscopy and x-ray diffraction (XRD). The grain size and orientation of the poly-Si seed layer were determined by electron back scattering diffraction (EBSD) method. The prepared poly-Si seed layer showed high volume fraction of crystalline Si and <100> orientation. The diffusion barrier layer and processing temperature significantly affected the grain size and orientation of the poly Si seed layer. The shorter oxidation time and lower processing temperature led to a better orientation of the poly-Si seed layer. This study presents the formation mechanism of a poly seed layer by inverse aluminum-induced crystallization.

Annealing for Improving adhesion between Metal layer and Oxide layer (산화막과 금속박막 계면에서의 adhesion 개선을 위한 열처리)

  • 김응수
    • Proceedings of the IEEK Conference
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    • 2002.06b
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    • pp.225-228
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    • 2002
  • The adhesion effect between the oxide layer and the metal layer has been studied by RTP anneal. Two types of oxides, BPSG and P-TEOS, were used as a bottom layer under multi-layered metal film. We observe the interface between oxide and metal layer using SEM (scanning electron microscopy), TEM (transmission electron microscopy), AES (auger electron spectroscopy). Adhesion failure was occurred by interfacial reaction between the BPSG oxide and the multi-layered metal film at 650"C RTP anneal. The phosphorus rich layer was observed at interface between BPSG oxide and metal layer by AES and TEM measurements. On the other hand adhesion was a)ways good in the sample used P-TEOS oxide as a bottom layer. We have known that adhesion between BPSG and multi-layered metal film was improved when the sample was annealed below $650^{\circ}C$.TEX>.

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Effect of Silicon Nitride Whisker Content on the Flexural Strength of Silicon Nitride-Boron Nitride-Silicon Carbide Multi-Layer Composites

  • Park, Dong-Soo;Cho, Byung-Wook
    • Journal of the Korean Ceramic Society
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    • v.40 no.9
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    • pp.832-836
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    • 2003
  • Multi-layer ceramic composites were prepared by tape casting followed by hot pressing using silicon nitride layer with silicon nitride whiskers, silicon nitride layer with silicon carbide particles and boron nitride-alumina layer. The whiskers were aligned during the casting. As the whisker content of the silicon nitride layer was increased up to 10 wt%, the flexural strength of the multi-layer composite was increased. However, further increase of the whisker content in the layer resulted in a rapid decrease of the strength of the composite. The results suggest that the strength of multi-layer ceramic composite showing non-catastrophic failure behavior can be significantly improved by incorporating the aligned whiskers in the layers.

Fabrication of $TiO_2$ Blocking Layers for CuSCN Based Dye-Sensitized Solar Cells by Atomic Layer Deposition Method

  • Baek, Jang-Mi;Seong, Myeong-Mo
    • Proceedings of the Korean Vacuum Society Conference
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    • 2013.08a
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    • pp.310.2-310.2
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    • 2013
  • For enhancement of dye-sensitized solar cell performance, TiO2 blocking layer has been used to prevent recombination between electron and hole at the conducting oxide and electrolyte interface. In solid state dye-sensitized solar cells, it is necessary to fabricate pin-hole free TiO2 blocking layer. In this work, we deposited the TiO2 blocking layer on conducting oxide by atomic layer deposition and compared the efficiency. To compare the efficiency, we fabricate solid state dye-sensitized solar cell with using CuSCN as hole transport material. We see the efficiency improve with 40nm TiO2 blocking layer and the TiO2 blocking layer morphology was characterized by SEM. Also, we used this blocking layer in TiO2/Sb2S3/ CuSCN solar cell.

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Observation on Structural Change of Low Level Atmosphere due to Effect of Sea Breeze (해풍 효과에 의한 저층대기구조 변화의 측정)

  • 전병일;김유근
    • Journal of Environmental Science International
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    • v.5 no.4
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    • pp.441-451
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    • 1996
  • The surface meteorological and upper layer meteorological observation carried out to investigate influences of sea breeze effect on lower layer atmosphere at Gori nuclear power plant for 29∼30 July, 1996. According to surface meteorological data, the inflow of sea breeze was occurred 11:30 on 29 July, 10:30-on 30 July, respectively, at observation site. And the meteorological tower data showed that wind direction of sea breeze was identified as south-westerly, and wind speed of 58 m was 2 times stronger than that of 10 m. It is notworthy that surface inversion layer which built from the night time to daybreak of next day was not broken off by seab reeze's inflow for daytime, and strong inversion layer observed at 47∼243 m with moderately stable class (F) by URC. It was found that strong stable layer of potential temperature appeared at that layer, maximum relative humidity observed at the bottom of inversion layer and maximum mixing ratio observed in the low of inversion layer.

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Modeling the human memory in nerve fields

  • Fujita, Osamu;Kakazu, Yukinori
    • 제어로봇시스템학회:학술대회논문집
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    • 1992.10b
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    • pp.70-73
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    • 1992
  • This paper describes the modeling of human memory using a nerve field model which is proposed for modeling the mechanism of brain mathematically. In our model, two phases of memory, retention and recollection, are focused on. The former consists of two stages, short-term memory (STM) and long-term memory (LTM). The proposed model consists of three parts, the STM Layer, LTM Layer and the Intermediate Layer between them. Each of these is constructed by a nerve field. In the STM Layer, memorized information is retained dynamically in the form of the reverberating states of units within the layer, while in the LTM Layer, it is stored statically in the form of structures of the weight on the links between units. the Intermediate Layer is introduced to translate this dynamic representation in the STM Layer to the LTNI Layer, and also to extract the static information from the STM Layer. In addition to this, we consider the recollection of information stored in the LTM. Finally, the behavior of this model is demonstrated by computer simulation.

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A New Hidden Error Function for Layer-By-Layer Training of Multi layer Perceptrons (다층 퍼셉트론의 층별 학습을 위한 중간층 오차 함수)

  • Oh Sang-Hoon
    • Proceedings of the Korea Contents Association Conference
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    • 2005.11a
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    • pp.364-370
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    • 2005
  • LBL(Layer-By-Layer) algorithms have been proposed to accelerate the training speed of MLPs(Multilayer Perceptrons). In this LBL algorithms, each layer needs a error function for optimization. Especially, error function for hidden layer has a great effect to achieve good performance. In this sense, this paper proposes a new hidden layer error function for improving the performance of LBL algorithm for MLPs. The hidden layer error function is derived from the mean squared error of output layer. Effectiveness of the proposed error function was demonstrated for a handwritten digit recognition and an isolated-word recognition tasks and very fast learning convergence was obtained.

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Influence of Flow Conditions on a Boundary Layer to the Near-Wake of a Flat Plat (평판 경계층 유동조건이 근접후류에 미치는 영향)

  • Kim, D.H.;Chang, J.W.
    • Proceedings of the KSME Conference
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    • 2004.04a
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    • pp.1625-1630
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    • 2004
  • An experimental study was carried out to investigate influence of flow conditions on a boundary layer to the near-wake of a flat plate. The flow condition in the vicinity of trailing edge that is influenced by upstream condition history is an essential factor that determines the physical characteristics of a near-wake. Various tripping wires were used to change boundary layer flow condition of upstream at the freestream velocity of 6.0 m/sec. Measurements of the boundary layer and near-wake according to the change of upstream conditions were conducted by using both I-probe(55P14 for boundary layer) and X-probe(55P61 for wake). Normalized velocity profiles of the boundary layer were shown the flow types such as laminar boundary layer, transition, and turbulent boundary layer at 0.95C from the leading edge. The velocity and turbulence intensity profiles of the near-wake for the case of laminar boundary layer at the flat plate surface exhibited a defect and a double peak showing perfect symmetry, respectively.

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Exchange Bias Modifications in NiFe/FeMn/NiFe Trilayer by a Nonmagnetic Interlayer

  • Yoon, S.M.;Sankaranarayanan V.K.;Kim, C.O.;Kim, C.G.
    • Journal of Magnetics
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    • v.10 no.3
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    • pp.99-102
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    • 2005
  • Modification in exchange bias of a NiFe/FeMn/NiFe trilayer, on introduction of a nonmagnetic Al layer at the top FeMn/NiFe interface, is investigated in multilayers prepared by rf magnetron sputtering. The introduction of Al layer leads to vanishing of bias of the top NiFe layer. But the bias for the bottom NiFe layer increases steadily with increasing Al layer thickness and attains bias (230 Oe) which is greater than that of the trilayer without the Al layer (150 Oe). When the top NiFe layer thickness is varied, exchange bias has highest value at 12 nm thickness for 1 nm thicknes of Al layer. Ion beam etching of the top NiFe layer also leads to an enhancement in bias for the bottom NiFe layer.

Numerical simulation of the effect of bedding layer geometrical properties on the shear failure mechanism using PFC3D

  • Haeri, Hadi;Sarfarazi, Vahab;Zhu, Zheming;Marji, Mohammad Fatehi
    • Smart Structures and Systems
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    • v.22 no.5
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    • pp.611-620
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    • 2018
  • In this research the effect of bedding layer angle and bedding layer thickness on the shear failure mechanism of concrete has been investigated using PFC3D. For this purpose, firstly calibration of PFC3d was performed using Brazilian tensile strength. Secondly shear test was performed on the bedding layer. Thickness of layers were 5 mm, 10 mm and 20 mm. in each thickness layer, layer angles changes from $0^{\circ}$ to $90^{\circ}$ with increment of $25^{\circ}$. Totally 15 model were simulated and tested by loading rate of 0.016 mm/s. The results shows that when layer angle is less than $50^{\circ}$, tensile cracks initiates between the layers and propagate till coalesce with model boundary. Its trace is too high. With increasing the layer angle, less layer mobilize in failure process. Also the failure trace is very short. It's to be note that number of cracks decrease with increasing the layer thickness. The minimum shear test strength was occurred when layer angle is more than $50^{\circ}$. The maximum value occurred in $0^{\circ}$. Also, the shear test tensile strength was increased by increasing the layer thickness.