• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.106.1-106.1
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• 2011

The Cu(In,Ga)Se2 (CIGS) thin film solar cells have been achieved until almost 20% efficiency by NREL. These solar cells include chemically deposited CdS as buffer layer between CIGS absorber layer and ZnO window layer. Although CIGS solar cells with CdS buffer layer show excellent performance, the short wavelength response of CIGS solar cell is limited by narrow CdS band gap of about 2.42 eV. Taking into consideration the environmental aspect, the toxic Cd element should be replaced by a different material. Among Cd-free candidate materials, the CIGS thin film solar cells with ZnS buffer layer seem to be promising with 17.2%(module by showa shell K.K.), 18.6%(small area by NREL). However, ZnS/CIGS solar cells still show lower performance than CdS/CIGS solar cells. There are several reported reasons to reduce the efficiency of ZnS/CIGS solar cells. Nakada reported ZnS thin film had many defects such as stacking faults, pin-holes, so that crytallinity of ZnS thin film is poor, compared to CdS thin film. Additionally, it was known that the hetero-interface between ZnS and CIGS layer made unfavorable band alignment. The unfavorable band alignment hinders electron transport at the heteo-interface. In this study, we focused on growing defect-free ZnS thin film and for favorable band alignment of ZnS/CIGS, bandgap of ZnS and CIGS, valece band structure of ZnS/CIGS were modified. Finally, we verified the photovoltaic properties of ZnS/CIGS solar cells.

• Journal of the Korean Society for Heat Treatment
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• v.13 no.5
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• pp.324-329
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• 2000

Microstructure, mechanical and fatigue behaviors of TiCN and TiN/TiCN thin films, deposited on quenched and tempered STD61 tool steel, were investigated by using XRD, XPS, hardness, adhesion and fatigue tests. The TiCN thin film is grown along the (100), (111) orientation, whereas the TiN/TiCN thin film is grown along the (111) orientation. The preferred orientation of TiN/TiCN thin film strongly depends on the TiN buffer layer whose orientation is (111), as is well-known. The TiN/TiCN thin film showed the higher adhesion compared with TiCN single layer because the TiN buffer layer, having good toughness, reduces the effects of the lower hardness of substrate. In the high cycle tension-tension fatigue test, the fatigue life of the TiCN and the TiN/TiCN coated steel increased approximately two to four times and five to nine times respectively compared with uncoated specimens. The TiN buffer layer in multilayer thin films plays an important role in reducing residual stress and fatigue crack initiation, and then in restraining the fatigue propagation.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.10
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• pp.855-860
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• 2001

Bi$_2$Sr$_2$CuO$_{x}$(Bi-2201) thin film were fabricated by atomic layer-by -layer deposition using an ion beam sputtering method. 10 wt% and 90 wt% ozone mixed oxygen were used with ultraviolet light irradiation to assist oxidation. XRD and RHEED investigations revealed that a buffer layer is formed at the early stage of deposition (less than 10 unit cell), and then c-axis oriented Bi-2201 grows on top of it.t.

• Transactions on Electrical and Electronic Materials
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• v.8 no.3
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• pp.125-130
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• 2007

DLC coating on ceramics is very useful for manufacturing the materials with hardness and low friction. Adhesion of DLC thin film on ceramics, on the other hand, is usually very weak. Adhesion of DLC film depends on many parameters such as contamination and chemical bonding between thin film and substrate. In this study, adhesion of DLC film on ceramics was improved by the intermediate layer when the plasma immersion ion deposition (PIID) technique was applied. It is found that the chemical composition and the thickness of intermediate layer have significantly an effect on the adhesion of DLC thin film on $Al_2O_3$.

• 한국정보디스플레이학회:학술대회논문집
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• 2003.07a
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• pp.311-314
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• 2003

Holographic diffuser(HD) layer was demonstrated to be located inside LC cell for a transmissive LCD of TFT-array on Color Filter structure. Master pattern of this layer was generated by holographic method and this pattern was replicated by the stamping of the master pattern on UV resin. Combined with a compensation film, TN-mode LCD with this layer showed improved viewing angle characteristics, especially along the up-down direction.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.15 no.6
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• pp.260-262
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• 2005

Thickness optimization of heavily doped p-type seeding layer was studied to improve performance of thin film silicon solar cell. We used liquid phase epitaxy (LPE) to grow active layer of $25{\mu}m$ thickness on $p^+$ seeding layer. The cells with $p^+$ seeding layer of $10{\mu}m\;to\;50{\mu}m$ thickness were fabricated. The highest efficiency of a cell is 12.95%, with $V_{oc}=633mV,\;J_{sc}=26.5mA/cm^2$, FF = 77.15%. The $p^+$ seeding layer of the cell is $20{\mu}m$ thick. As thicker seeding layer than $20{\mu}m$, the performance of the cell was degraded. The results demonstrate that the part of the recombination current is due to the heavily doped seeding layer. Thickness of heavily doped p-type seeding layer was optimized to $20{\mu}m$. The performance of solar cell is expected to improve with the incorporation of light trapping as texturing and AR coating.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.264.2-264.2
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• 2013

Molecular layer deposition (MLD) is sequential, self-limiting surface reaction to form conformal and ultrathin polymer film. This technique generally uses bifunctional precursors for stepwise sequential surface reaction and entirely organic polymer films. Also, in comparison with solution-based technique, because MLD is vapor-phase deposition based on ALD, it allows epitaxial growth of molecular layer on substrate and is especially good for surface reaction or coating of nanostructure such as nanopore, nanochannel, nanwire array and so on. In this study, polyurea film that consisted of phenylenediisocyanate and phenylenediamine was formed by MLD technique. In situ Fourier Transform Infrared (FTIR) measurement on high surface area SiO2 substrate was used to monitor the growth of polyurethane and polyurea film. Also, to investigate orientation of chemical bonding formed polymer film, plan-polarized grazing angle FTIR spectroscopy was used and it showed epitaxial growth and uniform orientation of chemical bones of polyurea films.

• Korean Journal of Materials Research
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• v.26 no.3
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• pp.160-165
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• 2016

To increase the capacitance of an Al electrolytic capacitor, the anodic oxide film, $Al_2O_3$, was partly replaced by an $Al_2O_3-ZrO_2$ (Al-Zr) composite film prepared by the vacuum infiltration method and anodization. The microstructure and composition of the prepared samples were investigated by scanning electron microscopy and transmission electron microscopy. The coated and anodized samples showed multi-layer structures, which consisted of an inner Al hydrate layer, a middle Al-Zr composite layer, and an outer $Al_2O_3$ layer. The thickness of the coating layer could go up to 220 nm when the etched Al foil was coated 8 times. The electrical properties of the samples, such as specific capacitance, leakage current, and withstanding voltages, were also characterized after anodization at 100 V and 600 V. The capacitances of samples with $ZrO_2$ coating were 36.3% and 27.5% higher than those of samples without $ZrO_2$ coating when anodized at 100 V and 600 V, respectively.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.118-118
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• 2011

The Nano-Floating Gate Memory(NFGM) devices with ZnO:Cu thin film embedded in Al2O3 and AlOx-SAOL were fabricated and the electrical characteristics were evaluated. To further improve the scaling and to increase the program/erase speed, the high-k dielectric with a large barrier height such as Al2O3 can also act alternatively as a blocking layer for high-speed flash memory device application. The Al2O3 layer and AlOx-SAOL were deposited by MLD system and ZnO:Cu films were deposited by ALD system. The tunneling layer which is consisted of AlOx-SAOL were sequentially deposited at $100^{\circ}C$. The floating gate is consisted of ZnO films, which are doped with copper. The floating gate of ZnO:Cu films was used for charge trap. The same as tunneling layer, floating gate were sequentially deposited at $100^{\circ}C$. By using ALD process, we could control the proportion of Cu doping in charge trap layer and observe the memory characteristic of Cu doping ratio. Also, we could control and observe the memory property which is followed by tunneling layer thickness. The thickness of ZnO:Cu films was measured by Transmission Electron Microscopy. XPS analysis was performed to determine the composition of the ZnO:Cu film deposited by ALD process. A significant threshold voltage shift of fabricated floating gate memory devices was obtained due to the charging effects of ZnO:Cu films and the memory windows was about 13V. The feasibility of ZnO:Cu films deposited between Al2O3 and AlOx-SAOL for NFGM device application was also showed. We applied our ZnO:Cu memory to thin film transistor and evaluate the electrical property. The structure of our memory thin film transistor is consisted of all organic-inorganic hybrid structure. Then, we expect that our film could be applied to high-performance flexible device.----못찾겠음......

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.20 no.4
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• pp.168-172
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• 2010

Superhydrophilic thin film consisted of positively charged poly (allylamine hydrochloride) (PAH) and negatively charged poly (acrylic acid) (PAA) was fabricated by a layer-by-layer (LBL) self-assembly. Glutaraldehyde (GA) was used in order to increase an adhesion hardness by amine-aldehyde reaction. The surface morphology, thickness, transmittance, water contact angle and adhesion hardness of PAH/PAA thin film with or without GA were measured. The adhesion hardness of PAH/PAA thin film with GA deposition increased over 2 times although the film thickness of PAH/GA/PAA decreased than that of PAH/PAA thin film. The increase of adhesion hardness by amine-aldehyde reaction between PAH and GA was measured by fourier transform infrared (FT-IR) spectroscopy. Fabricated PAH/PAA and PAH/GA/PAA thin films showed water contact angel under $5^{\circ}$ and high transmittance over 91.3% at 550 nm.