• Proceedings of the Korean Nuclear Society Conference
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• 1996.05d
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• pp.101-106
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• 1996

For the application of the neutron flux mapping, an accurate calculation of the sensitivity is required because the sensitivity is proportional to the neutron flux density. Sensitivity is defined as the current per unit length per unit neutron flux and it mainly depends on the depression factor(f), the escape probability from the emitter($\varepsilon$1) and the charge build-up factor of the insulator layer(c). A Monte Carlo simulation was accomplished to calculate the sensitivity of rhodium emitter material and alumina(Al$_2$O$_3$) insulator with a cylindrical geometry, based on the (n,${\beta}$) interaction and on other interaction including the secondary electron generation for the more accurate estimation of the sensitivity. From the simulation results, factors fur the sensitivity were accurately calculated and compared with other theoretical and experimental values. In addition, the sensitivity linearly increases and saturates as the emitter radius increases. The accomplished method is useful in the analysis for the change of SPND sensitivity as a function of burn-up and in the optimum design of SPND.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1998.06a
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• pp.317-320
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• 1998

Electroluminescent(EL) devices based on organic materials have been of great interest due to their possible applications for large-area flat-panel displays, where they are attractive because of their capability of multicolor emission, and low operation voltage. In this study, glass substrate/ITO/Eu(TTA)$_3$(Phen)/Al(A), glass substrate/ITO/TPD/Eu(TTA)$_3$(phen)/Al(B) aNd glass substrate/ITO/TPD/Eu(TTA)$_3$(Phen)/A1Q$_3$/Al (C) structures were fabricated by vacuum evaporation method, where aromatic diamine(TPD) was used as a hole transporting material, Eu(TTA)$_3$(phen) as an emitting material, and tris(8-hydroxyquinoline) Aluminum (AlQ$_3$) as an electron transporting layer. Etectroluminescent(EL) and I-V characteristics of Eu(TTA)$_3$(phen) with a various thickness were investigated. This structure shows the red EL spectrum, which is almost the same as the PL spectrum of Eu(TTA)$_3$(phen). I-V characteristics of this structure show that turn-on voltage was 9V and current density was 0.01A/㎤ at a dc operation voltage of 9V. Electrical transporting phenomena of these structures was explained using the trapped-charge-limited current model with I-V characteristics.

• Bulletin of the Korean Chemical Society
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• v.34 no.1
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• pp.107-111
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• 2013

A new green-emitting material with donor-acceptor architecture, 3,7-bis(1'-phenylbenzimidazole-2'-yl)-10-phenylphenothiazine (BBPP) was synthesized and its thermal, optical, and electroluminescent characteristics were investigated. Organic light-emitting diodes (OLEDs) with four different multilayer structures were prepared using BBPP as an emitting layer. The optimized device with the structure of [ITO/2-TNATA (40 nm)/BBPP (30 nm)/TPBi (30 nm)/Alq3 (10 nm)/LiF (1 nm)/Al (100 nm)] exhibited efficient green emission. Enhanced charge carrier balance and electron mobility in the organic layers enabled the device to demonstrate a maximum luminance of 31,300 cd/$m^2$, a luminous efficiency of 6.83 cd/A, and an external quantum efficiency of 1.62% with the CIE 1931 chromaticity coordinates of (0.21, 0.53) at a current density of 100 mA/$cm^2$.

• Polymer(Korea)
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• v.36 no.4
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• pp.519-524
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• 2012

Capacitance measurements of the polymer light-emitting diodes (PLEDs) with conjugated polyelectrolyte (CPE) electron transporting layers (ETLs) provide important information of device physics for understanding the function of CPEs as ETLs, together with current density-voltage-luminescence measurements. We investigated the counterion-dependent capacitance behaviors that present a highly negative or positive capacitance at the low frequency, and suggested different carrier injection mechanisms. Capacitance model study reveals that the electron injection mechanism can be described either by the dipole alignment scheme or by electronic charge carrier accumulation at the cathode/ETL/emission layer interfaces.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.17 no.6
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• pp.580-585
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• 2004

Silicon dioxide (SiO$_2$) is widely used as a gate dielectric material for thin film transistors (TFT) and semiconductor devices. In this paper, SiO$_2$ films were grown by APCVD(Atmospheric Pressure chemical vapor deposition) at the high temperature. Experimental investigations were carried out as a function of $O_2$ gas flow ratios from 0 to 200 1pm. This article presents the SiO$_2$ gate dielectric studies in terms of deposition rate, refrative index, FT-IR, C-V for the gate dielectric layer of thin film transistor applications. We also study defect passivation technique for improvement interface or surface properties in thin films. Our passivation technique is Forming Gas Annealing treatment. FGA acts passivation of interface and surface impurity or defects in SiO$_2$ film. We used RTP system for FGA and gained results that reduced surface fixed charge and trap density of midgap value.

• Korean Chemical Engineering Research
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• v.45 no.2
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• pp.178-182
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• 2007

Non-aqueous supercapacitors by using activated C and $LiMn_2O_4$ as an active material in a positive electrode were prepared and characterized. From the cyclic voltammetry and AC impedance analysis, the capacitive effect by electric double layer of activated carbon and the faradic effect by intercalation/deintercalation of $Li^+$ ion were observed. Increasing the ratio of $LiMn_2O_4$, specific capacitances and energy densities of supercapacitor were increased. At the ratio of 0.86:0.14 ($LiMn_2O_4:C$), the maximum specific capacitance of 17.51 Wh/L and energy density of 23.83 F/cc were obtained, which were more than twice of those for a conventional electric double layer capacitor. Even after 1,000 charge/discharge cycle, the supercapacitor by using the electrode containing 14% of activated carbon and 86% of $LiMn_2O_4$ showed 60% better specific capacitance and energy density than that by using the electrode containing 100% activated carbon.

• Journal of the Korean Chemical Society
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• v.54 no.1
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• pp.93-98
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• 2010

In this work, the electrochemical properties of surface treated multi-walled carbon nanotubes (MWNTs) were studied. Nitrogen and oxygen functional groups of the MWNTs were introduced by urea and acidic treatment, respectively. The surface functional groups of the MWNTs were confirmed by X-ray photoelectron spectroscopy (XPS) measurements and zeta-potential method. The characteristics of $N_2$ adsorption isotherm at 77 K, specific surface area, and total pore volumes were investigated by BET eqaution, BJH method and t-plot method. Electrochemical properties of the functionalized MWNTs were accumulated by cyclic voltammetry at the scan rates of 50 $mVs^{-1}$ and 100 $mVs^{-1}$ in 1M $H_2SO_4$ as electrolytes. As a result, the functionalized MWNTs led to an increase of capacitance as compared with pristine MWNTs. It was found that the increase of capacitance for urea treated MWNTs was attributed to the increase in density of surface functional groups, resulting in improving the wettability between electrode materials and charge species.

• Journal of the Korean Institute of Telematics and Electronics
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• v.22 no.4
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• pp.76-83
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• 1985

Mo2N/Mo double layer which is to be used for gate of the RMOS (refractory metal oxide semiconductor) and interconnection material has been formed by means of low temperature r.f. reactive sputtering in Ar and N2 mixture. The sheet .esistance of 1 000$\AA$Mo2 N/4000$\AA$Mofilm was about 1.20-1.28 ohms/square, which is about an order of magnitude lower than that of polysilicon film. The workfunction difference naE between MO2N/MO layer and (100) p-Si with 6-9 ohm'cm resistivity obtained from C-V plots was about -0.30ev, and the fixed charge density Qss/q in the oxide was about 2. Ix1011/cm2. To evaluate the signal transfer delay time per inverter stage, an integrated ring oscillator circuit consisting of 45-stage inverters was fabricated using the polysilicon gate NMOS process. The signal transfer delay time per inverter stage obtained in this experiment was about 0.8 nsec

• Composites Research
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• v.29 no.4
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• pp.179-185
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• 2016

A self-charging supercapacitor is constructed through simple integration of the energy storage and photo exited materials at the photo electrode. The large band gap of $NiO/Fe_3O_4$ heterostructure generates photo electron at the photo electrode and store the charges through redox mechanism at the counter electrode. Sulfanilic acid azocromotrop/reduced graphene oxide layer at the photo electrode trapped the photo generated hole and store the charge by forming double layer. The solar supercapacitor device is charged within 400 s up to 0.5 V and exhibited a high specific capacitance of ~908 F/g against 1.5 A/g load. The solar illuminated supercapacitor shows a high energy and power density of 33.4 Wh/kg and 385 W/kg along with a very low relaxation time of ~15 ms ensuring the utility of the self charging device in the various field of energy storage and optoelectronic application.

• Journal of the Korean Magnetics Society
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• v.1 no.2
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• pp.1-8
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• 1991

The electronic and magnetic structure of Fe overlayers on W(110) is determined by means of the all-electron local spin density full potential linearized augmented plane wave (FLAPW) method with a single slab approach. Charge and spin densities, magnetic moments, contact hyperfine fields, and layer projected density of states (LDOS) are presented. For bilayer Fe coverage, we find magnetic moments to be 2.90 and 2.30 ${\mu}_B$ for the surface and subsurface Fe layers, respectively, corresponding to a 18% enhancement of the total magnetization compared with the calculated bulk value (2.22${\mu}_B$);For monolayer coverage the moment is 2.56 ${\mu}_B$ which is enhanced by 16% compared to bulk. Unusual changes in the magnetic hyperfine interaction are found in going from a monolayer to a bilayer coverage. Comparison of the results to the theoretical ones of the clean Fe(110) to discuss the hybridization and the negative pressure effects. We discuss our results by comparing them to experimental results.