• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.187-187
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• 2013

양자점(Quuantum dot, QD)은 0차원 특성을 가지는 구조로 양자 구속 효과로 인하여 bulk와 는 다른 구조적, 광학적, 전기적 특성을 가지고 있다. InAs QD는 size와 barrier의 bandgap 조절을 이용하여 쉽게 bandgap을 바꿀 수 있는 장점이 있어 solar cell, semiconductor laser diode, infrared photodetector 등으로 많은 연구가 이루어지고 있다. 일반적으로 Stranski-Krastanov (SK) mode로 성장한 InAs QD는 보통 GaAs epilayer와의 lattice mismatch (7%)를 이용하여 성장을 하고 이로 인하여 strain을 가지고 있고 QD의 density와 stack이 높을수록 strain이 커진다. 하지만 sub-monolayer (SML) QD 같은 경우 wetting layer가 생기는 지점인 1.7 ML이하에서 성장되는 성장 방식으로 SK-QD보다는 작은 strain을 가지게 된다. 또 QD의 size가 작아 SK-QD보다 큰 bandgap을 가지고 있다. 본 연구에서는 분자선 에피택시(molecular beam epitaxy, MBE)를 이용하여 semi-insulating GaAs substrate 위에 InAs QD를 0.5/1/1.5/1.7/2/2.5 monolayer로 성장을 하였다. GaAs과 InAs의 성장온도와 성장속도는 각각 $590^{\circ}C$, 0.8 ML/s와 $480^{\circ}C$, 0.2 ML/s로 성장을 하였으며 적층사이의 interruption 시간은 10초로 고정하였고 10주기를 성장하였다. Photoluminescence (PL)측정 결과 SML-QD는 size에 따라서 energy가 1.328에서 1.314 eV로 약간 red shift를 하였고 SK-QD의 경우 1.2 eV의 energy정도로 0.1 eV이상 red shift 하였다. 이는 QD size에 의하여 energy shift가 있다고 사료된다. 또 wetting layer의 경우 1.41 eV의 energy를 가지는 것으로 확인 하였다. SML-QD는 SK-QD 보다 반치폭(full width at half maximum, FWHM)이 작은 것은 확인을 하였고 strain field의 감소로 해석된다. 하지만 SML-QD의 경우 SK-QD보다 상대적으로 작은 PL intensity를 가지고 있었다. 이를 개선하기 위해서는 보다 높은 QD density를 요구하게 되는데 growth temperature, V/III ratio, growth rate 등을 변화주어서 연구할 계획이다.

• Nuclear Engineering and Technology
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• v.5 no.1
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• pp.55-64
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• 1973

The effect of compression in the strain ageing of Ferrovac E iron has been examined with compressive testing following the prestrain in compression. Both prestraining and testing were preformed at room temperature with the strain rate of 1.9$\times$10$^{-4}$ se $c^{-1}$ and that of 0.95$\times$10$^{-4}$ se $c^{-1}$ , respectively. Ageing was carried out at several temperatures below 8$0^{\circ}C$ using thermostatically controlled oil baths with a temperature control within$\pm$1$^{\circ}C$. It was found that the rate of strain ageing obeyed the $t^{2}$3/ law up to about five hours ageing at 6$0^{\circ}C$. The rate was slower than theses reported in case of the tensile prestrained iron. Activation energy for strain ageing has been estimated as 21.5 Kcal/mole at tile first stage of the aging process. At the second stage of ageing where the $t^{2}$3/ law is still valid, however, the activation energy was somewhat decreased. The activation energy at the first stage of ageing was about 10% larger than published results on the tensile-prestraining. This difference between the activation energies is explained in terms of the residual stress field in lattice.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.250-254
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• 2002

Intergranular corrosion of austenitic stainless steels is a conventional and momentous problem during welding and high temperature use. One of the major reasons for such intergranular corrosion is so-called sensitization, i.e., chromium depletion due to chromium carbide precipitation at grain boundaries. Conventional methods for preventing sensitization of austenitic stainless steels include reduction of carbon content in the material, stabilization of carbon atoms as non-chromium carbides by the addition of titanium, niobium or zirconium, local solution-heat-treatment by laser beam, etc. These methods, however, are not without drawbacks. Recent grain boundary structure studies have demonstrated that grain boundary phenomena strongly depend on the crystallographic nature and atomic structure of the grain boundary, and that grain boundaries with coincidence site lattices are immune to intergranular corrosion. The concept of "grain boundary design and control", which involves a desirable grain boundary character distribution, has been developed as grain boundary engineering. The feasibility of grain boundary engineering has been demonstrated mainly by thermomechanical treatments. In the present study, a thermomechanical treatment was tried to improve the resistance to the sensitization by grain boundary engineering. A type 304 austenitic stainless steel was pre-strained and heat-treated, and then sensitized, varying the parameters (pre-strain, temperature, time, etc.) during the thermomechanical treatment. The grain boundary character distribution was examined by orientation imaging microscopy. The intergranular corrosion resistance was evaluated by electrochemical potentiokinetic reactivation and ferric sulfate-sulfuric acid tests. The sensitivity to intergranular corrosion was reduced by the thermomechanical treatment and indicated a minimum at a small roll-reduction. The frequency of coincidence-site-lattice boundaries indicated a maximum at a small strain. The ferric sulfate-sulfuric acid test showed much smaller corrosion rate in the thermomechanically-treated specimen than in the base material. An excellent intergranular corrosion resistance was obtained by a small strain annealing at a relatively low temperature for long time. The optimum parameters created a uniform distribution of a high frequency of coincidence site lattice boundaries in the specimen where corrosive random boundaries were isolated. The results suggest that the thermomechanical treatment can introduce low energy segments in the grain boundary network by annealing twins and can arrest the percolation of intergranular corrosion from the surface.

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.29-29
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• 1999

The synthesis of layered structures on the nanometer scale has become essential for continued improvements in the operation of various electronic and magnetic devices. Abrupt metal-metal interfaces are desired for applications ranging from metallization in semiconductor devices to fabrication of magnetoresistive tunnel junctions for read heads on magnetic disk drives. In particular, characterizing the interface structure between various transition metals (TM) and aluminum is desirable. We have used the techniques of MeV ion backscattering and channeling (HEIS), x-ray photoemission (ZPS), x-ray photoelectron diffraction(XPD), low-energy ion scattering (LEIS), and low-energy electron diffraction(LEED), together with computer simulations using embedded atom potentials, to study solid-solid interface structure for thin films of Ni, Fe, Co, Pd, Ti, and Ag on Al(001), Al(110) and Al(111) surfaces. Considerations of lattice matching, surface energies, or compound formation energies alone do not adequately predict our result, We find that those metals with metallic radii smaller than Al(e.g. Ni, Fe, Co, Pd) tend to form alloys at the TM-Al interface, while those atoms with larger atomic radii(e.g. Ti, Ag) form epitaxial overlayers. Thus we are led to consider models in which the strain energy associated with alloy formation becomes a kinetic barrier to alloying. Furthermore, we observe the formation of metastable fcc Ti up to a critical thickness of 5 monolayers on Al(001) and Al(110). For Ag films we observe arbitrarily thick epitaxial growth exceeding 30 monolayers with some Al alloying at the interface, possible driven by interface strain relief. Typical examples of these interface structures will be discussed.

• Journal of the Korean Vacuum Society
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• v.6 no.3
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• pp.263-266
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• 1997

We studied an interfacial characteristics of $In_{0.1}Ga_{0.9}As$/ GaAs by photoreflectance (PR) measurement at room temperature. With increasing thickness of epitaxial layer, Franz-Keldysh oscillation (FKO) periods of PR signals were decreased, and interfacial electric field was decreased. This can be explained by the increases of defects due to lattice mismatch near the heterointerface between InGaAs and GaAs. For the thickness of epitaxial layer thinner than the 300$\AA$, InGaAs epitazial layer closed to critical thickness and increased strain, and then the bandgap energy shifted high greatly.

• Proceedings of the Korean Magnestics Society Conference
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• 2013.05a
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• pp.19-20
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• 2013

Thermoelectic properties of the typical thermoelectric host materials, the tellurides and selenides, are known to be noticeably changed by their volume change due to the strain [1]. In the bismuth telluride ($Bi_2Te_3$) crystal, a substitution of rare-earth element by replacing one of the Bi atoms may cause the change of the lattice parameters while remaining the rhombohedral structure of the host material. Using the first-principles approach by the precise full potential linearized augmented plane wave (FLAPW) method [2], we investigated the Ce substitution effect on the thermoelectric transport coefficients for the bismuth telluride, employing Boltzmann's equation in a constant relaxation-time approach fed with the FLAPW wave-functions within the rigid band approximation. Depending on the real process of re-arrangement of atoms in the cell to reach the equilibrium state, $CeBiTe_3$ was found to manifest a metal or a narrow bandgap semiconductor. This feature along with the strong correlation effect originated by the 4f states of Ce affect significantly on the thermoelectric properties. We showed that the position of the strongly localized f-states in energy scale (Fig. 1, f-states are shaded) was found to alter critically the transport properties in this material suggesting an opportunity to improve the thermoelectric efficiency by tuning the external strain which may changing the location of the f-sates.

• Korean Journal of Mineralogy and Petrology
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• v.35 no.3
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• pp.259-271
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• 2022

Lattice preferred orientation (LPO), which shows a specific lattice-orientation of minerals, is affected by the deformation conditions of minerals. Because of this reason, LPO is very useful to study the deformation conditions of the minerals and the rocks. In this study, we collected amphibole-rich rocks from the Geumgye Mountain, Chugye-ri, Yugu-eup, Chungcheongnamdo, located in the southwestern part of the Gyeonggi Massif, and analyzed the LPO of amphibole and plagioclase using electron backscattered diffraction. Two types of LPOs of amphibole, type I and type IV, were observed in Yugu amphibole-rich rocks. Our data suggest that the amphibole-rich rocks in Yugu were deformed by rigid body rotation regardless of the LPOs and grain size of amphibole, and the LPOs are considered to have been affected by the degree of deformation (i.e. strain). In the low strained amphibole-rich rock, a strong type I LPO and a large grain size of amphibole were observed. On the other hand, in the highly strained amphibole-rich rocks, a weak type IV LPO and a small grain size of amphibole were observed. The various degree of deformation observed in the Yugu amphibole-rich rocks were also observed in the adjacent peridotites, indicating that the rocks in Yugu experienced various levels of deformation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2010.06a
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• pp.31-31
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• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Korean Journal of Optics and Photonics
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• v.21 no.6
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• pp.230-234
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• 2010

Highly-Birefringent Photonic Crystal Fiber (Hi-Bi PCF) is composed of a single material, silica, so that its temperature sensitivity is extremely low. Therefore, we propose afiber based Sagnac interferometer for measurement of strain and curvature independent of temperature variation. The sensitivities of strain and curvature (both axes) are measured to be $1.41\;pm/{\mu}{\varepsilon}$ and $0.93nm/m^{-1}$(slow axis Y), $-1.6\;nm/m^{-1}$(fast axis X), respectively.

• Korean Journal of Materials Research
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• v.23 no.7
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• pp.373-378
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• 2013

In order to clarify the effect of C/Ti atom ratios(${\chi}$) on the deformation behavior of $TiC_{\chi}$ at high temperature, single crystals having a wide range of ${\chi}$, from 0.56 to 0.96, were deformed by compression test in a temperature range of 1183~2273 K and in a strain rate range of $1.9{\times}10^{-4}{\sim}5.9{\times}10^{-3}s^{-1}$. Before testing, $TiC_{\chi}$ single crystals were grown by the FZ method in a He atmosphere of 0.3MPa. The concentrations of combined carbon were determined by chemical analysis and the lattice parameters by the X-ray powder diffraction technique. It was found that the high temperature deformation behavior observed is the ${\chi}$-less dependent type, including the work softening phenomenon, the critical resolved shear stress, the transition temperature where the deformation mechanism changes, the stress exponent of strain rate and activation energy for deformation. The shape of stress-strain curves of $TiC_{0.96}$, $TiC_{0.85}$ and $TiC_{0.56}$ is seen to be less dependent on ${\chi}$, the work hardening rate after the softening is slightly higher in $TiC_{0.96}$ than in $TiC_{0.85}$ and $TiC_{0.56}$. As ${\chi}$ decreases the work softening becomes less evident and the transition temperature where the work softening disappears, shifts to a lower temperature. The ${\tau}_c$ decreases monotonously with decreasing ${\chi}$ in a range of ${\chi}$ from 0.86 to 0.96. The transition temperature where the deformation mechanism changes shifts to a lower temperature as ${\chi}$ decreases. The activation energy for deformation in the low temperature region also decreased monotonously as ${\chi}$ decreased. The deformation in this temperature region is thought to be governed by the Peierls mechanism.