• Journal of the Korean Vacuum Society
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• v.18 no.6
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• pp.459-467
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• 2009

$Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were prepared on indium-tin-oxide(ITO)-coated glass substrates by using thermal evaporation. The crystallization was achieved by annealing the as-deposited films in flowing nitrogen. X-ray diffraction spectra showed that the $Cd_2GeSe_4$ and the $Cd_2GeSe_4:Co^{2+}$ films were preferentially grown along the (113) orientation. The crystal structure was rhomohedral(hexagonal) with lattice constants of $a=7.405\;{\AA}$ and $c=36.240\;{\AA}$ for $Cd_2GeSe_4$ and $a=7.43\;{\AA}$ and $c=36.81\;{\AA}$ for $Cd_2GeSe_4:Co^{2+}$ films. From the scanning electron microscope images, the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were plated, and the grain size increased with increasing annealing temperature. The optical energy band gap, measured at room temperature, of the as-deposited $Cd_2GeSe_4$ films was 1.70 eV and increased to about 1.74 eV and of the as-deposited $Cd_2GeSe_4:Co^{2+}$ films was 1.79 eV and decreased to about 1.74 eV upon annealing in flowing nitrogen at temperatures from $200^{\circ}C$ to $500^{\circ}C$. The dynamical behavior of the charge carriers in the $Cd_2GeSe_4$ and $Cd_2GeSe_4:Co^{2+}$ films were investigated by using the photoinduced discharge characteristics technique.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.189-198
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• 2000

The stochiometric mixture of evaporating materials for the $CuGaSe_2$single crystal thin films were prepared from horizontal furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0}$ and $c_0$ were 5.615 $\AA$ and 11.025 $\AA$, respectively. To obtains the single crystal thin films, $CuGaSe_2$mixed crystal was deposited on throughly etched GaAs(100) by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $610^{\circ}C$ and $450^{\circ}C$ respectively, and the growth rate of the single crystal thin films was about 0.5$\mu\textrm{m}$/h. The crystalline structure of single crystal thin films was investigated by the double crystal X-ray diffraction (DCXD). Hall effect on this sample was measured by the method of van der Pauw and studied on carrier density and mobility depending on temperature. From Hall data, the mobility was likely to be decreased by pizoelectric scattering in the temperature range 30 K to 150 K and by polar optical scattering in the temperature range 150 K to 293 K. The optical energy gaps were found to be 1.68 eV for CuGaSe$_2$sing1e crystal thin films at room temperature. The temperature dependence of the photocurrent peak energy is well explained by the Varshni equation then the constants in the Varshni equation are given by $\alpha$ = $9.615{\times}10^{-4}$eV/K, and $\beta$ = 335 K. From the photocurrent spectra by illumination of polarized light of the $CuGaSe_2$single crystal thin films. We have found that values of spin orbit coupling $\Delta$So and crystal field splitting $\Delta$Cr was 0.0900 eV and 0.2498 eV, respectively. From the PL spectra at 20 K, the peaks corresponding to free bound excitons and D-A pair and a broad emission band due to SA is identified. The binding energy of the free excitons are determined to be 0.0626 eV and the dissipation energy of the acceptor-bound exciton and donor-bound exciton to be 0.0352 eV, 0.0932 eV, respectively.

• Korean Journal of Mineralogy and Petrology
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• v.34 no.3
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• pp.169-176
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• 2021

This study aimed to fundamentally understand structural changes of zeolite under pressure and in the presence of different pressure-transmitting media (PTM) for application studies such as immobilization of heavy metal cation or CO₂ storage using pressure. High-pressure X-ray powder diffraction study was conducted on the zeolite-W (K_6.4Al_6.5Si_25.8O₆₄× 15.3H₂O, K-MER) to understand linear compressibility and the bulk moduli in different PTM conditions. Zeolite-w is a synthetic material having the same framework as natural zeolite merlinoite ((K, Ca_0.5, Ba_0.5, Na)₁₀ Al₁₀Si₂₂O₆₄× 22H₂O). The space group of the sample was identified as I4/mmm belonging to the tetragonal crystal system. Water, carbon dioxide, and silicone-oil were used as pressure-transmitting media. The mixture of sample and each PTM was mounted in a diamond anvil cell (DAC) and then pressurized up to 3 GPa with an increment of ca. 0.5 GPa. Pressure-induced changes of powder diffraction patterns were measured using a synchrotron X-ray light source. Lattice constants, and bulk moduli were calculated using the Le-Bail method and the Birch-Murnaghan equation. In all PTM conditions, linear compressibility of c-axis (𝛽^c) was 0.006(1) GPa^-1 or 0.007(1) GPa^-1. On the other hand, the linear compressibility of a(b)-axis (𝛽^a) was 0.013(1) GPa^-1 in silicone-oil run, which is twice more compressible than the a(b)-axis in water and carbon dioxide runs, 𝛽^a = 0.006(1) GPa^-1. The bulk moduli were measured as 50(3) GPa, 52(3) GPa, and 29(2) GPa in water, carbon dioxide, and silicone-oil run, respectively. The orthorhombicities of ac-plane in the water, and carbon dioxide runs were comparatively constant, near 0.350~0.353, whereas the value decreased abruptly in the silicone-oil run following formula, y = -0.005(1)x + 0.351(1) by non-penetrating pressure fluid condition.