• Journal of the Korea Concrete Institute
• /
• v.28 no.4
• /
• pp.489-496
• /
• 2016

Recently, a concern about hollow core precast concrete (PC) slab has been increased as a method to improve the construction ability by reducing the self weight of structures during the construction. Hollow core slab which is known as a typical PC slab in domestic construction of PC building has a problem to put shear reinforcements in the web of element during the production of element in the factory. With regard to this point, recently, tripple ribs slab (TRS) which can be said as a new type of half PC slab system was developed. In TRS, it is possible to place shear reinforcements in PC element during the production of the element in the factory. This paper presents the shear test result of TRS which was done by one point loading test under simple support condition. Test parameters are the presence of cast-in-place (CIP) concrete and the contribution of lattice bars. From the test, it was found that the TRS has sufficient shear capacity to resist the design load and its strength can be predicted by the code equations for general beam. It is recommended to ignore the strength of lattice bar in the calculation of shear strength during the construction since its contribution is too low to be considered when CIP is not casted.

• Advances in nano research
• /
• v.1 no.1
• /
• pp.59-70
• /
• 2013

ZnO nanostructures of rod-like, faceted bar, cup-end bars, and spindle shaped morphologies could be grown by a low power ultrasonic synthesis process. pH of the reaction mixture seems to plays an important role for defining the final morphology of ZnO nanostructures. While the solution pH as low as 7 produces long, uniform rod-like nanostructures of mixed phase (ZnO and $Zn(OH)_2$), higher pH of the reaction mixture produces ZnO nanostructures of different morphologies in pure hexagonal wurtzite phase. pH of the reaction as high as 10 produces bar shaped uniform nanostructures with lower specific surface area and lower surface and lattice defects, reducing the defect emissions of ZnO in the visible region of their photoluminescence spectra.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2010.06a
• /
• pp.31-31
• /
• 2010

The growth of the high-quality GaN epilayers is of significant technological importance because of their commercializedoptoelectronic applications as high-brightness light-emitting diodes (LEDs) and laser diodes (LDs) in the visible and ultraviolet spectral range. The GaN-based heterostructural epilayers have the polar c-axis of the hexagonal structure perpendicular to the interfaces of the active layers. The Ga and N atoms in the c-GaN are alternatively stacked along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs, the stress applied along the same axis contributes topiezoelectric polarization, and thus the total polarization is determined as the sum of spontaneous and piezoelectric polarizations. The total polarization in the c-GaN heterolayers, which can generate internal fields and spatial separation of the electron and hole wave functions and consequently a decrease of efficiency and peak shift. One of the possible solutions to eliminate these undesirable effects is to grow GaN-based epilayers in nonpolar orientations. The polarization effects in the GaN are eliminated by growing the films along the nonpolar [$11\bar{2}0$] ($\alpha$-GaN) or [$1\bar{1}00$] (m-GaN) orientation. Although the use of the nonpolar epilayers in wurtzite structure clearly removes the polarization matters, however, it induces another problem related to the formation of a high density of planar defects. The large lattice mismatch between sapphiresubstrates and GaN layers leads to a high density of defects (dislocations and stacking faults). The dominant defects observed in the GaN epilayers with wurtzite structure are one-dimensional (1D) dislocations and two-dimensional (2D) stacking faults. In particular, the 1D threading dislocations in the c-GaN are generated from the film/substrate interface due to their large lattice and thermal coefficient mismatch. However, because the c-GaN epilayers were grown along the normal direction to the basal slip planes, the generation of basal stacking faults (BSFs) is localized on the c-plane and the generated BSFs did not propagate into the surface during the growth. Thus, the primary defects in the c-GaN epilayers are 1D threading dislocations. Occasionally, the particular planar defects such as prismatic stacking faults (PSFs) and inversion domain boundaries are observed. However, since the basal slip planes in the $\alpha$-GaN are parallel to the growth direction unlike c-GaN, the BSFs with lower formation energy can be easily formed along the growth direction, where the BSFs propagate straightly into the surface. Consequently, the lattice mismatch between film and substrate in $\alpha$-GaN epilayers is mainly relaxed through the formation of BSFs. These 2D planar defects are placed along only one direction in the cross-sectional view. Thus, the nonpolar $\alpha$-GaN films have different atomic arrangements along the two orthogonal directions ($[0001]_{GaN}$ and $[\bar{1}100]_{GaN}$ axes) on the $\alpha$-plane, which are expected to induce anisotropic biaxial strain. In this study, the anisotropic strain relaxation behaviors in the nonpolar $\alpha$-GaN epilayers grown on ($1\bar{1}02$) r-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVO) were investigated, and the formation mechanism of the abnormal zigzag shape PSFs was discussed using high-resolution transmission electron microscope (HRTEM).

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.13 no.2 s.54
• /
• pp.122-128
• /
• 2009

This study is to improve constructability of LB-DECK construction in site such as inconvenience of main and distribution bars in arrangements LB-DECK Panel which is work is applied to many bridges these days as a permanent formwork. So, the constructability is improved by changing the method of allocation of main reinforcing bar and distribution bar which is reviewed for improving efficiency of design and construction process among the suggested methods. The crack shapes, deflections, and strains under static load of the improvement of LB-DECK Panel are compared and analyzed to former LB-DECK Panel. As a result, 13% of strength compared to before the improvement of LB-DECK Panel, and 10% of strength is increased in the case of slab.

• Proceedings of the Korean Nuclear Society Conference
• /
• 1997.05a
• /
• pp.45-50
• /
• 1997

The conventional MOX fuel shows adverse controllability in view of its neutronic characteristics such as decreased soluble boron worth and effective delayed-neutron fraction compared to the UO$_2$ fuel. In order to mitigate these disadvantages, we devised a new concept of the hybrid UO$_2$-MOX fuel pellet with dual structure such that its outer annular section contains. UO$_2$ fuel and its inner cylindrical bar contains MOX fuel. The lattice physics code HELIOS was used to evaluate the neutronic characteristics of three different types of fuel pellets ; UO$_2$ fuel pellet, MOX fuel pellet, and hybrid UO$_2$-MOX fuel pellet. Results show that the hybrid UO$_2$-MOX fuel pellet generally has intermediate neutronic tendency between UO$_2$ fuel and MOX which could diminish the problems arising from the use of the conventional MOX fuel.

• Korean Journal of Crystallography
• /
• v.14 no.1
• /
• pp.7-12
• /
• 2003

The compound SrA1₂(BO₃)₂O is a good host lattice for negative thermal expansion. We have measured thermal expansion over the limited temperature range by X-ray diffraction and ceramic dilatometry. In the aluminum borate compound, a thermal contraction is observed with a coefficient -1.64×10/sup -4/ Å/℃ on the c axis in the temperature range 23∼215℃ and with a maximum change -1.75㎛ in length of a ceramic bar of 20㎜ in the temperature range 110∼170℃, respectively.

• 한국신재생에너지학회:학술대회논문집
• /
• 2006.06a
• /
• pp.387-390
• /
• 2006

We report here that under strong attacksof external $CH_4$ guest molecules the sII and sH methane hydrates are structurally transformed to the crystalline me framework of sI, leading to favorable change of the lattice dimension of the host-guest networks. The High Power Decoupling $^{13}C$ NMR and Raman spectroscopies were used to identify structure transitions of the mixed $CH_4+C_2H_6$ hydrates (sIIl) and hydrocarbons (methylcyclohexane, isopentane) + $CH_4$ hydrates (sH). The resulting spectra indicate that most of the synthesized sII and sH hydrates were transformed to methane hydrate of sl under 110 bar and particularly the coexistence of sl with sII or sH appear according to the surrounding methane-rich gas conditions. The present findings might be expected to Provide rational evidences regarding the preponderant occurrence of naturally-occurring sI methane hydrates in marine sediments.

• Journal of the Korean Applied Science and Technology
• /
• v.23 no.3
• /
• pp.223-229
• /
• 2006

Methanol and formaldehyde were produced directly by the partial oxidation of methane over mixed oxide catalysts. The catalysts were composed of Mo and Bi with late-transition metals, such as Mn, Fe, and Co. The reaction was carried out at $450^{\circ}C$, 50 bar in a fixed-bed differential reactor. The prepared catalysts were characterized by $O_2-TPD$ and BET apparatus. Among the catalysts used, the catalyst composed of 1:1:2.5 molar ratio of Mo:Bi:Mn showed the best methane conversion and methanol selectivity. The change in ratio of methane to oxygen affected at the conversion and selectivity, and the most proper ratio was 10:1.5. Methane conversion, methanol and formaldehyde selectivities increased with the surface areas of the catalysts. From the $O_2-TPD$ result, it was found that the oxygen species responsible for this reaction might be the lattice oxygen species desorbed at high temperature around $800^{\circ}C$.

• Journal of the Korea institute for structural maintenance and inspection
• /
• v.16 no.1
• /
• pp.89-98
• /
• 2012

A steel wire-integrated deck plate that welds integrated triangle truss steel wires on a galvanized steel sheet is developed to reduce construction costs of slabs or formworks such as shores and supports, and it is already widely applied in many construction fields. In this research, experimental tests for 14 full scale specimens, which are in the same field conditions, are conducted on several parameters such as the diameter of top, bottom and lattice steel wire, cutting methods of ends. According to the result, changes in final destruction types of the test bodies and cutting methods of ends didn't affect structural performance of test specimens, and for a 4.0m-span test specimen, there was no big problems in using bottom bar D7 or D8.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2009.06a
• /
• pp.235-235
• /
• 2009

This paper describes the influence of a polycrystalline (poly) 3C-SiC buffer layer on the surface acoustic wave (SAW) properties of poly aluminum nitride (AlN) thin films by comparing the center frequency, insertion loss, the electromechanical coupling coefficient ($k^2$), andthetemperaturecoefficientoffrequency(TCF) of an IDT/AlN/3C-SiC structure with those of an IDT/AlN/Si structure, The poly-AlN thin films with an (0002)-preferred orientation were deposited on a silicon (Si) substrate using a pulsed reactive magnetron sputtering system. Results show that the insertion loss (21.92 dB) and TCF (-18 ppm/$^{\circ}C$) of the IDT/AlN/3C-SiC structure were improved by a closely matched coefficient of thermal expansion (CTE) and small lattice mismatch (1 %) between the AlN and 3C-SiC. However, a drawback is that the $k^2(0.79%)$ and SAW velocity(5020m/s) of the AlN/3C-SiC SAW device were reduced by appearing in some non-(0002)AlN planes such as the (10 $\bar{1}$ 2) and (10 $\bar{1}$ 3) AlN planes in the AlN/SiC film. Although disadvantages were shown to exist, the use of the AlN/3C-SiC structure for SAW applications at high temperatures is possible. The characteristics of the AlN thin films were also evaluated using FT-IR spectra, XRD, and AFM images.