• Journal of the Korean Crystal Growth and Crystal Technology
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• v.6 no.3
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• pp.341-350
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• 1996

The CdS thin films are grown on quartz plate by hot wall epitaxy. The source and substrate temperature is $590^{\circ}C$ and $400^{\circ}C$ respectively, and thickness of the film is $2.5\;\mu\textrm{m}$. Using extrapolation method of X-ray diffraction patterns for the CdS thin film, it was found hexagonal structure whose lattice constant a and c were $4.137\;{\AA}$ and $6.713\;{\AA}$, respectively. Hall effect on this sample was measured by the method of van der Pauw and studied on cattirer density and mobility depending on temperature. From hall data, the mobility was likely to be decreased by piezoelectric scattering in the temperature range 30 K to 200 K and by polar optical scattering in the temperature range 200 K to 293 K. In order to explore the applicability as a photoconductive cell we measured the sensitivity ($\gamma$), the ratio of photocurrent to darkcurrent (pc/dc), maximum allowable power dissipation (MAPD), spectral response and response time. The results indicated that for the samples annealed in Cu vapor the photoconductive characteristics are the best. Then we obtained the sensitivity of 0.99, the value of pc/dc of $9.42{\times}10^{6}$, the MAPD of 318 mW, and the rise and decay time of 10 ms and 9 ms, respectively.

• Journal of the Korean Magnetics Society
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• v.11 no.2
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• pp.58-62
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• 2001

The L $i_{0.5}$F $e_{2.5-x}$A $l_{x}$ $O_4$ systems (x=0, 0.3, 0.6, 0.9, 1.2, 1.5) were investigated by X-ray diffraction and Mossbauer spectroscopy. The structure of all the samples is cubic spinel type and lattice constant decrease with increasing Al content x. The Moissbauer spectra reveal two sextet for 0$\leq$x$\leq$0.6, two sextet and a doublet for 0.9$\leq$x$\leq$1.2, and a doublet for x=1.5. The cation distribution of the samples is (L $i_{1-a}$$^{+}$F $e_{a}$ $^{3+}$)$^{A}$[L $i_{a-0.5}$$^{+}$A $l_{2.5-a-x}$$^{+}$F $e_{2.5-a-x}$$^{3+}$]$^{B}$ $O_4$$^{2-}$ and substituted $Al^{3+}$ ions decrease the covalency of F $e^{3+}$- $O^{2-}$ bond in B-sites and A-B super-exchange interactions.tions.s.tions.ons.s.

• Journal of the Korean Magnetics Society
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• v.10 no.2
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• pp.74-80
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• 2000

CoCr$_{x}$ Fe$_{2-x}$O$_4$(0.0$\leq$x$\leq$1.0) ferrites have been fabricated by sol-gel method. The crystallographic and magnetic properties of the samples were investigated by means of x-ray diffraction, scanning electron microscophy, Mossbauer spectroscopy and vibrating sample magnetometry. The structure of all the samples is cubic spinel type and the lattice constant decrease with increasing Cr content. The substituted Cr ions were located only in the B-site. The particle size also decreases with increasing Cr content. The Mossbauer spectra consist of two sextets due to Fe$^{3+}$ions at A- and B sites for 0.0$\leq$x$\leq$0.6, while, a paramagnetic doublet appears for 0.8$\leq$x$\leq$1.0. The magnetic hyperfine field decreases with increasing Cr content. The relaxation spectra was shown at 0.8$\leq$x$\leq$1.0 in CoCr$_{x}$ Fe$_{2-x}$O$_4$. The coercivity decreases drastically, while, the saturation magnetization decreases linearly with increasing x.ing x.

• Applied Chemistry for Engineering
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• v.28 no.6
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• pp.720-725
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• 2017

M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm) catalysts were prepared for the partial oxidation of methane (POM) to syngas. The catalysts were characterized by BET, TEM, and XPS. The BET-specific surface area and average pore size for M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm) were 538.8, 504.3, and $447.3m^2/g$ and 6.4, 6.8, and 7.1 nm, respectively. TEM results showed that the mesoporous hexagonol structure was formed for SBA-15, while the homogeneous dispersion of Ni and Ce particles on the surface was formed for Ce(10)-Ni(5)/SBA-15 caused by the confinment effect of SBA-15. XPS data confirmed that $Ce^{4+}$ and $Ce^{3+}$ on the surface catalyst have two oxidation states due to the lattice oxygen species ($O^{2-}$, $O^-$). The yields of POM to syngas over Ce(10)-Ni(5)/SBA-15 were 52.9% $H_2$ and 21.7% CO at 1 atm, 973 K, $CH_4/O_2=2$, $GHSV=1.08{\times}10^5mL/g_{cat.}{\cdot}h$, and these values were kept constant even after 75 h on streams. The same tendency of syngas yields was observed for M(10)-Ni(5)/SBA-15(M=Ce, Nd, Sm). These results confirm that the redox reaction of promoters including Ce, Nd, and Sm enhanced the stability and yield of catalysts.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.4 no.2
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• pp.139-147
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• 1994

Orthophosphate crystals were grown by the hydrothermal method and the properties of grown crystals were investigated by means of X-ray diffraction. Vickers hardness tester, etc. The starting powders of $AIPO_4 and GaPO_4 $were prepared as a single phase by the solid state reaction of stoichiometric mixture of $AI_2O_3 or Ga_2O_3$ and $NH_4H_2PO_4$ and the subsequently by the hydrothermal treatment. The hydrothermal conditions for high growth rates of the orthophosphate crystals are as follows: $AlPO_4$ crystal; temperature ranges, between $170$~$200^{\circ}C$; temperatures difference, $15$~$20^{\circ}C;$, hydrothermal solvent, 4m HCl, $GaPO_4 crystal; temperature ranges, between $210 and 240^{\circ}C;$; temperature difference, $25$~$30^{\circ}C; $, hydrothermal solvent, 4m HCl. Morphologies of grown crystals tended to be bounded by (1010), (1011) and (0111) faces at low temperatures, and grew with well developed (0001) faces by increasing the growth temperature. On the other hand, the properties of orthophosphate crystals $(AlPO_4/GaPO_4)$ were as follows: lattice parameters (nm); a=0.494, c=1.094/a=0.490, c=1.105, density (gcm-3); 2.62/3.56, Vickers hardness (Nm^2); $1.02{\times}10^1^0/7.06{\times}10^9$, refractive indices; $ne=1.529{\pm}0.003, no=1.519{\pm}0.003/ne=1.611{\pm}0.006, no=1.599{\pm}0.006, birefringence; {\pm}0.01/{\pm}0.012$, dielectric constant (Fm-1); 6/7.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.10 no.3
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• pp.239-244
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• 2000

Synthesis and high temperature phase stability of $_{1+x}$ Co$_{y}$ Mn$_{2-y}$ $O_4$(0$\leq$x$\leq$0.2,y=0,1/9,1/6) spinel, both the excess lithium and cobalt added, have been studied. The spinel was prepared by oxalate precipitation method as the wet chemical process. Oxalate derived spinel was synthesized by heating of precipitates at temperature lower than $600^{\circ}C$. As a result of the TG-DTA and XRD analysis of prepared and quenched powders, it was found that reversible phase transitions started at temperatures $T_1$, $T_2$및 $T_{2'}$. The transitions involved weight (oxygen) loss and gain during heating and cooling. The effects of Li excess and Co doping on the spinel lattice constant, phase stability and transition temperatures of the prepared powders are investigated. This study would provide important data for determining the spinel preparation process such as synthesis temperature and cooling speed.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.3
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• pp.127-133
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• 2012

To achieve low-cost and high-efficiency of thin-film solar cells applications, the sol-gel method that can be coated on a large area substrate, obtain homogeneous thin films of high purity was used. We studied structural and optical characteristics versus annealing temperature of $Cu_2ZnSnS_4$ which has kesterite structure by substitution low-cost sulfur (S) instead of high-cost selenium (Se). By analyzing XRD patterns, main peak was observed at $2{\theta}=28.5^{\circ}$ when Zn/Sn ratio is 0.8/1.2. And when we observed kesterite structure which has orientation of (112) direction, the more annealing temperature increase the bigger strength of (112) direction is. $Cu_2ZnSnS_4$ thin film showed characteristics of kesterite structure at $550^{\circ}C$. And when we calculated lattice constant, a = 5.5047 and $c=11.014{\AA}$ as same JCPDS (Joint Committee on Powder Standards) data measured. We measured optical transmittance to analyze optical characteristics. Optical transmittance was lower than 65 % at visible ray (${\lambda}=380{\sim}770nm$).

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.206-211
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• 2013

The effect of a $WO_3$ or $Ga_2O_3$ addition on the densification, phase evolution, optical reflectance, and elastic and dielectric properties of $Y_2O_3$-doped AlN ceramics sintered at $1800^{\circ}C$ for 3 h is investigated. The investigated compositions of the additives are 4.5 wt% $Y_2O_3$ (YA), 3.5 wt% $Y_2O_3$-1.0 wt% $Ga_2O_3$ (YGA), and 3.5 wt% $Y_2O_3$-1.0 wt% $WO_3$ (YWA). $YAlO_3$ and $Y_4Al_2O_9$ form as the secondary phases in all of the investigated compositions, whereas $W_2B$ appears additionally in the YWA. In the YGA, Ga is detected in the AlN grains, indicating that the dissolution of $Ga_2O_3$ into the AlN lattice occurs. The addition of $WO_3$ blackens the specimen more significantly than that of $Ga_2O_3$ does. In all of the investigated specimens, the linear shrinkage and the apparent density are above 20 percent and in the range of 3.34-3.37 $g/cm^3$, respectively. The elastic modulus, Poisson's ratio, the dielectric constant, and the dielectric loss are in the ranges of 335-368 GPa, 0.146-0.237, 8.60-8.63, $2.65-3.95{\times}10^{-3}$, respectively. The sinterability and the properties of $Y_2O_3$-doped AlN ceramics are not much altered by the addition of $WO_3$ or $Ga_2O_3$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07a
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• pp.352-356
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• 2003

A stoichiometric mixture of evaporating materials for $CuGaSe_2$ single crystal am films was prepared from horizontal electric furnace. Using extrapolation method of X-ray diffraction patterns for the polycrystal $CuGaSe_2$, it was found tetragonal structure whose lattice constant $a_0$ and $c_0$ were $5.615\;{\AA}\;and\;11.025\;{\AA}$, respectively. To obtain the single crystal thin films, $CuGaSe_2$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the hot wall epitaxy (HWE) system. The source and substrate temperatures were $610^{\circ}C$ and $450^{\circ}C$, respectively, The crystalline structure of the single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD). The carrier density and mobility of $CuGaSe_2$ single crystal thin films measured with Hall effect by van der Pauw method are $9.24{\times}10^{16}\;cm^{-3}$ and $295\;cm^2/V{\cdot}s$ at 293 K, respectively. The temperature dependence of the energy band gap of the $CuGaSe_2$ obtained from the absorption spectra was well described by the Varshni's relation, $E_g(T)\;:\;1.7998\;eV\;-\;(8.7489\;{\times}\;10^{-4}\;eV/K)T^2(T\;+\;335\;K)$. After the as-grown $CuGaSe_2$ single crystal thin films was annealed in Cu-, Se-, and Ga-atmospheres, the origin of point defects of $CuGaSe_2$ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of $V_{CU}$, $V_{Se}$, $CU_{int}$, and $Se_{int}$, obtained by PL measurements were classified as a donors or accepters type. And we concluded that the heat-treatment in the Cu-atmosphere converted $CuGaSe_2$ single crystal thin films to an optical n-type. Also, we confirmed that Ga in $CuGaSe_2/GaAs$ did not form the native defects because Ga in $CuGaSe_2$ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Magnetics Society
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• v.6 no.2
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• pp.67-72
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• 1996

The crystallographic and magnetic properties of the ferrimagnetic $CoFe_2O_4$ have been studied by X-ray and Mossbauer measurements. The crystal structure is found to be cubic spinel structure with the lattice constant $a_{0}=8.381{\pm}0.005{\AA}\;and\;a_{0}=8.391{\pm}0.005{\AA}$ for slow-cooled and quenched CoFeZ04' respectively. Mossbauer spectra of $CoFe_2O_4$ have been taken at various temperatures ranging from 13 to 780 K. The isorrer shifts indicate that the valence states of the Fe ions for tetrahedral(A) and octahedral(B) sites have ferric character. Debye temperatures for the A and B sites are found to be ${\theta}_A=734{\pm}5K\;and\;{\theta}_B=248{\pm}5K$ for slow-cooled and ${\theta}_A=531{\pm}5K\;and\;{\theta}_B=197{\pm}5K$ for quenched, respectively. Atomic migration from the A to the B sites starts near 400 K and 350 K for slow-cooled and quenched $CoFe_2O_4$, respectively, am increases rapidly with increasing temperature to such a degree that about 69 % for slow-cooled and 91 % for quenched of the ferric ions on the A sites have rmved over to the B sites at 700 K.