• 한국정보통신설비학회:학술대회논문집
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• 2006.08a
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• pp.19-23
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65 mA. but also a high on/off contrast ratio more than 50 dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• Journal of the Semiconductor & Display Technology
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• v.21 no.2
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• pp.101-106
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• 2022

In this paper, WBG semiconductor such as SiC and GaN were applied as power switches for LCL circuit that can be applied to satellite power systems and the test results of the LCL circuit are reported. P-channel MOSFET and N-channel MOSFET, which were generally used in the conventional LCL circuit, were applied together to expand the utility of the test results. The design and stability evaluation were performed using a Micro Cap circuit simulation program. For the test circuit, a module using each switch was manufactured, and a total of 5 modules were manufactured and the steady state and transient state characteristics were compared. From the experimental results, the LCL circuit for power supply of the satellite power system constructed in this paper satisfied the constant current and constant voltage conditions under various operating conditions. The P-channel MOSFET showed the lowest efficiency characteristics, and the three N-channel switches of Si, SiC and GaN showed relatively high efficiency characteristics of up to 99.05% or more. In conclusion, it was verified that the on-resistor of the switch had a direct effect on the efficiency and loss characteristics.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.43 no.12 s.354
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• pp.40-46
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• 2006

Latching optical switches and optical logic gates AND and OR are demonstrated, for the first time, by the monolithic integration of a vertical cavity lasers with depleted optical thyristor structure, which have not only a low threshold current with 0.65mA, but also a high on/off contrast ratio more than 50dB. By simple operating technique with changing a reference switching voltage, this single device operates as two logic functions, optical logic AND and OR. The thyristor laser fabricated using the oxidation process achieved a high optical output power efficiency and a high sensitivity to the optical input light.

• Journal of IKEEE
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• v.12 no.2
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• pp.110-117
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• 2008

This paper presents a new Insulated Gate Bipolar Transistor(IGBT) based on Non Punch Through(NPT) IGBT structure for power switching device. The proposed structure has adding N+ beside the P-base region of the conventional IGBT structure. The added n+ diffusion of the proposed device ensure device has faster turn-off time and lower forward conduction loss than the conventional IGBT structure. But, added n+ region can reduce th breakdown voltage and latching current density of the proposed device due to its high doping concentration. This problems can be overcome by using diverter on the right side of the device. In the simulation results, turn-off time of the proposed device is 0.3us and the on-state voltage drop is 3V. The results show that the proposed device has superior characteristic than conventional structure.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.44 no.7 s.361
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• pp.24-30
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• 2007

Latching optical switches and optical logic gates with AND or OR, and the INVERT functionality are demonstrated, for the first time, by the monolithic integration of a differential typed vertical cavity laser with depleted optical thyristor (VCL-DOT) structure with a low threshold current of 0.65 mA, a high slope efficiency of 0.38 mW/mA, and high sensitivity to input optical light. Many kinds of logic functions (AND, OR, NAND, NOR, and INVERT) are experimentally demonstrated using a differential switching operation scheme changing the intensity of a reference input beam without any changes of electrical circuits.