• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.3
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• pp.246-250
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• 2001

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of355 nm. In order to investigate the emission properties of ZnO thin films, Pl measurements with an Ar ion laser a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited Pl bands centers around 390, 510 and 640 nm, labeled near ultra-violet(UV), green and orange bands. Structural properties of ZnO thin films are analyzed with X-ray diffraction(XRD).

• Proceedings of the Optical Society of Korea Conference
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• 2008.07a
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• pp.409-410
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• 2008

We have demonstrated a tunable Raman fiber laser using the combination of broadband CFBG and tunable fiber Bragg grating with the center wavelength 1415nm, which is tuned by adjusting longitudinal strain in the wavelength range from 1410 to 1420nm. A total output power of the tunable laser was about 0.9W with 13.8% of laser slope efficiency.

• Korean Journal of Optics and Photonics
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• v.16 no.1
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• pp.99-102
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• 2005

We fabricated a tunable fiber ring laser consisting of a novel strain device and fiber Bragg gratings. The lasing power and FWHM bandwidth of the optical fiber ring laser was -12dBm and 0.05nm respectively. The fiber ring laser was tuned as much as 10nm at a 8000.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.11a
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• pp.539-542
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• 2000

ZnO thin films for light emission device have been deposited on sapphire and silicon substrates by pulsed laser deposition technique(PLD). A Nd:YAG laser was used with the wavelength of 355 nm. In order to investigate the emission properties of ZnO thin films, PL measurements with an Ar ion laser as a light source using an excitation wavelength of 351 nm and a power of 100 mW are used. All spectra were taken at room temperature by using a grating spectrometer and a photomultiplier detector. ZnO exhibited PL bands centered around 390, 510 and 640 nm, labeled near ultra-violet (UV), green and orange bands. Structural properties of ZnO thin films are analized with X-ray diffraction (XRD).

• Current Optics and Photonics
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• v.7 no.6
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• pp.665-672
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• 2023

This study focuses on investigating the impact of the spectral linewidth of a seed laser in a master-oscillator power amplifier (MOPA) configuration on stimulated Brillouin scattering and the beam quality of the output diffracted by a grating. To conduct the study, a distributed feedback (DFB) laser is modulated in a pseudorandom binary sequence (PRBS) and amplified by a two-stage Yb-doped fiber amplifier to achieve an output power of over 1 kW. The spectral linewidth of the seed laser is systematically varied from 1 to 12 GHz in the frequency domain by varying the PRBS modulation parameters. The experimental results reveal a tradeoff between suppressing stimulated Brillouin scattering and enhancing beam quality with increased spectral linewidth. Therefore, the study provides valuable insights into optimizing spectral beam combining to achieve high beam quality and scalable power upgrade in fiber lasers.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.976-979
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• 2003

In this study, we formed the 2-dimensional holographic grating in order to mamufactured 2-dimensional photonic crystal in amorphous $As_{40}Ge_{10}Se_{15}S_{35}$ and $Ag/As_{40}Ge_{10}Se_{15}S_{35}$ thin film which have the excellent optical sensetivity using by He-Ne laser(632.8nm). The intensity of incident beam was 2.5mW and incident angle that $2{\theta}$ is $20^{\circ}$. We formed the holographic grating after had formed the 1-dimansional holographic grating and then rotate the sample. We confirmed that 2-dimensional holographic grating result of the figure of diffracted beam and AFM(Atomic Forced Microcopy) image.

• Korean Journal of Digital Imaging in Medicine
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• v.8 no.1
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• pp.51-55
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• 2006

The effects of Asaddition in amorphous selenium(a-Se) films for digital X-ray conversion material have been studied using the moving photocarrier grating(MPG) technique. This method utilizes the moving interference pattern generated by the superposition of the two frequency shifted laser beams for the illumination of the sample. This moving intensity grating induces a short circuit current, j$_{sc}$ in a-Se:As film. The transport parameters of the sample are extracted from the grating-velocity dependent short circuit current induced in the sample along the modulation direction. The electron and hole mobility, and recombination lifetime of a-Se films with arsenic(As) additions have been obtained. We have found an Increase in hole drift mobility and recombination lifetime, especially when 0.3% As is added into a-Se film, whereas electron mobility decreases with As addition due to the defect density. The transport properties for As doped a-Se films obtained by using MPG technique have been compared with X-ray sensitivity for a-Se:As device. The fabricated a-Se(0.3% As) device film exhibited the highest X-ray sensitivity out of 5 samples.

• Korean Journal of Optics and Photonics
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• v.18 no.6
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• pp.441-446
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• 2007

Outcoupling efficiency of the OLED device is improved by incorporating both a microlens array and a diffractive grating pattern. The microlens array improves the light transmission at the interface of glass and air, and the diffractive grating outcouples the guided mode propagating at the waveguide, which consists of ITO and organic layers. By using the PDMS soft mold imprinting method, the microlens array is fabricated on the glass substrate. The diffractive grating pattern is directly fabricated on the ITO surface by using laser interferometry. A microlens array with a diameter of $10{\mu}m$ improves the light coupling efficiency by 22%. The diffractive grating made of TSMR photoresist enhances the luminance power efficiency by 41% at a current density of $20mA/cm^2$.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.149-154
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• 2007

Bragg reflecting waveguide devices have been fabricated on a flexible polymer substrate utilizing a post lift-off process which could Provide excellent uniformity of grating Patterns on Plastic film. The 510 m Period Bragg grating pattern is made by two methods. In the first sample the grating is fabricated by exposing the laser interference pattern on a photoresist, and then it is inscribed by $O_2$ plasma etching. The grating pattern of the second sample is formed by a PDMS soft mold imprinting process. The selective adhesion property of SU-8 material for Au and Si surfaces is utilized to prepare a 100-mm thick plastic substrate. Single mode waveguide is fabricated on the plastic substrate using polymer materials with refractive indices of 1.540 and 1.430 for the core and the cladding layers, respectively. The Bragg grating on Plastic substrate does not show any degradation in its spectral response compared to the reference sample made on a silicon wafer.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.41 no.3
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• pp.39-44
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• 2004

Fiber Bragg grating sensors are fabricated by core index modulation using UV laser and phasemask. Bragg wavelength of the grating is changed by the external strain. In this paper, a signal processing system of fiber Bragg grating sensor has studied in the optical wavelength domain. The system is based on the sweep semiconductor light source that consists of SLD, F-P tunable filter and etalon filter. The hysteresis effects of PZT in the F-P tunable filter are compensated. The long term measurement stability is obtained by controlling the temperature of F-P tunable filter and the SLD. We compare the strain data from fiber Bragg grating sensor and that from strain gauge at concrete hume pipe. We also get very good results for the long gauge displacement using fiber Bragg grating sensor which are identical to the data with short gauge length ordinary displacement sensor.