• The Journal of Korean Academy of Prosthodontics
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• v.43 no.3
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• pp.363-378
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• 2005

Statement of problem. Hydroxyapatite(HA) coated titanium surfaces have not yet showed the reliable osseointegration in various conditions. Purpose. This study was aimed to investigate microstructures, chemical composition, and surface roughness of the surface coated by the hydrothermal method and to evaluate the effect of hydrothermal coating on the cell attachment, as well as cell proliferation. Material and Methods. Commercially pure(c.p.) titanium discs were used as substrates. The HA coating on c.p. titanium discs by hydrothermal method was performed in 0.12M HCl solution mixed with HA(group I) and 0.1M NaOH solution mixed with HA(group II). GroupⅠ was heated at 180 $^{\circ}C$ for 24, 48, and 72 hours. GroupⅡ was heated at 180 $^{\circ}C$ for 12, 24, and 36 hours. And the treated surfaces were evaluated by Scanning electron microscopy(SEM), Energy dispersive X-ray spectroscopy(EDS), X-ray photoelectron spectroscopy(XPS), X-ray diffraction method(XRD), Confocal laser scanning microscopy(CLSM). And SEM of fibroblast and 3-(4,5- dimethylthiazol-2-yl)-2,5-diphenyl tetrazolium bromide(MTT) assay were used for cellular responses of the treated surfaces. Results. The color of surface changed in both groups after the hydrothermal process. SEM images showed that coating pattern was homogeneous in group II, while inhomogeneous in group I. H72 had rosette-like precipitates. The crystalline structure grew gradually in group II, according to extending treatment period. The long needle-like crystals were prominent in N36. Calcium(Ca) and phosphorus(P) were not detected in H24 and H48 in EDS. In all specimens of group II and H72, Ca was found. Ca and P were identified in all treated groups through the analysis of XPS, but they were amorphous. Surface roughness did not increase in both groups after hydrothermal treatment. The values of surface roughness were not significantly different between groups I and II. According to the SEM images of fibroblasts, cell attachments were oriented and spread well in both treated groups, while they were not in the control group. However, no substantial amount of difference was found between groups I and II. Conclusions. In this study during the hydrothermal process procedure, coating characteristics, including the HA precipitates, crystal growth, and crystalline phases, were more satisfactory in NaOH treated group than in HCl treated group. Still, the biological responses of the modified surface by this method were not fully understood for the two tested groups did not differ significantly. Therefore, more continuous research on the relationship between the surface features and cellular responses seems to be in need.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.23-23
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• 2009

GaN-based nitride semiconductors have attracted considerable attention in high-brightness light-emitting-diodes (LEDs) and laser diodes (LDs) covering from green to ultraviolet spectral range. LED and LD heterostructures are usually grown on (0001)-$Al_2O_3$. The large lattice mismatch between $Al_2O_3$ substrates and the GaN layers leads to a high density of defects(dislocations and stacking faults). Moreover, Ga and N atoms are arranged along the polar [0001] crystallographic direction, which leads to spontaneous polarization. In addition, in the InGaN/GaN MQWs heterostructures, stress applied along the same axis can also give rise to piezoelectric polarization. The total polarization, which is the sum of spontaneous and piezoelectric polarizations, is aligned along the [0001] direction of the wurtzite heterostructures. The change in the total polarization across the heterolayers results in high interface charge densities and spatial separation of the electron and hole wave functions, redshifting the photoluminescence peak and decreasing the peak intensity. The effect of polarization charges in the GaN-based heterostructures can be eliminated by growing along the non-polar [$11\bar{2}0$] (a-axis) or [$1\bar{1}00$] (m-axis) orientation instead of thecommonly used polar [0001] (c-axis). For non-polar GaN growth on non-polar substrates, the GaN films have high density of planar defects (basal stacking fault BSFs, prismatic stacking fault PSFs), because the SFs are formed on the basal plane (c-plane) due to their low formation energy. A significant reduction in defect density was recently achieved by applying blocking layer such as SiN, AlN, and AlGaN in non-polar GaN. In this work, we were performed systematic studies of the defects in the nonpolar GaN by conventional and high-resolution transmission electron microscopy.

• Korean Journal of Microbiology
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• v.47 no.1
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• pp.22-29
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• 2011

Rhodopsin is a membrane protein with seven transmembrane region which contains a retinal as its chromophore. Although there have been recently reports on various photo-biochemical features of rhodopsins by a wide range of purifying and measurement methods, there was no actual comparison related to the difference of biochemical characteristics according to their physical environment of rhodopsins. First, proteorhodopsin (PR) was found in marine proteobacteria whose function is known for pumping proton using light energy. Second one is Anabaena sensory rhodopsin (Nostoc sp.) PCC7120 (ASR) which belongs to eubacteria acts as sensory regulator since it is co-expressed with transducer 14 kDa in an operon. In this study, we applied two types of rhodopsins (PR and ASR) to various environmental conditions such as in Escherichia coli membranes, membrane in acrylamide gel, in DDM (n-dodecyl-${\beta}$-D-maltopyranoside), OG (octyl-${\beta}$-D-glucopyranoside), and reconstituted with DOPC (1,2-didecanoyl-sn-glycero-3-phosphocholine). According to the light-induced difference spectroscopy, rhodopsins in 0.02% DDM clearly showed photointermediates like M, and O states which respond to the different wavelengths, respectively and showed the best signal/noise ratio. The laser-induced difference spectra showed the fast formation and decay rate of photointermediates in the DDM solubilized samples than gel encapsulated rhodopsin. Each of rhodopsins seemed to be adapted to its surrounding environment.

• 한국신재생에너지학회:학술대회논문집
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• 2011.05a
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• pp.104.1-104.1
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• 2011

가볍고, 유연성(flexibility)을 갖는 박막(thin film)형 플랙서블 태양전지(flexible solar cell)는 상황에 따른 형태의 변형이 가능하여, 휴대가 간편하고, 기존 혹은 신규 구조물의 지붕(rooftop)등에 설치가 용이하여, 차세대 성장 동력 분야에서 각광받고 있다. 그러나 아직까지 플랙서블 태양전지는 제작시 열에 의한 기판의 변형, 기판 이송시 너울 현상, 대면적 패터닝(patterning) 기술 등 많은 어려움 등으로 웨이퍼나 글라스 기판에 제조된 태양전지 대비 낮은 광전환 효율을 갖는다. 따라서 본 연구에서는 플랙서플 태양전지 성능개선을 위해 3.5세대급 ($450{\times}450cm^2$) 스퍼터(sputter), 금속유기 화학기상장치 (MOCVD), 플라즈마 화학기상장치 (PECVD), 레이저 가공장치 (Laser scriber)를 이용하여 a-Si:H/a-SiGe:H 이중접합(tandem)을 갖는 태양전지를 제작하였고, 광 변환효율 특성을 평가하였다. 전도도(conductivity), 라만(Raman)분광 및 UV/Visible 분광 분석을 통하여 박막의 전기적, 구조적, 광학적 물성을 평가하여 단위박막의 물성을 최적화 했다. 또한 제작된 태양전지는 쏠라 시뮬레이터 (Solar Simulator)를 이용하여 성능 평가를 수행하였고, 상/하부층의 전류 정합 (current matching)을 위해 외부양자효율 (external quantum efficiency) 분석을 수행하였다. 제작된 이중접합 접이식 태양전지로 소면적($0.25cm^2$)에서 8.7%, 대면적($360cm^2$ 이상) 8.0% 이상의 효율을 확보하였으며, 성능 개선을 위해 대면적 패턴 기술 향상 및 공정 기술 개선을 수행 중이다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.

• Korean Journal of Materials Research
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• v.8 no.7
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• pp.648-652
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• 1998

TIG remelting was performed to harden the surface of automobile earn shaft. Multipass remelting was conducted in longitudinal direction under argon gas atmosphere. The microstructure of as-east earn shaft was gray iron which consisted of flake graphite and pearlitic matrix. The remelted area had microstructue of both fine pearlite and ledeburite structure that consisted of globular austenite and $Fe_3C$. Hardness for as-cast earn shaft had HRc 25~28, however it increased at remelted area to HRc 53~55. Black line was found at heat affected zone next to the fusion line, that is remelt area of previous pass, during multipass remelting. Black line was identified as graphite, which was transformed from $Fe_3C$. in the ledeburite structure. It is observed that all graphites were nucleated at $Fe_3C$. and matrix interface. High density energy laser remelting process was also applied to verify whether black line could be eliminated. However, black line was still existed as observed in TIG remelting process. Regraphitization was simulated on the ledeburitic structure specimen using Gleeble 1500 with conditions of 1100 and 100$0^{\circ}C$ for 0.5, I, 3, 5 and 1Osee. From the fact that graphite was formed even at the simulation condition of 100$0^{\circ}C$ for 0.5sec, it is seen that regraphitization is an inevitable phenomenon generated whatever processes used during multipass overlap remelting.

• Proceedings of the KWS Conference
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• 2002.10a
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• pp.250-254
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• 2002

Intergranular corrosion of austenitic stainless steels is a conventional and momentous problem during welding and high temperature use. One of the major reasons for such intergranular corrosion is so-called sensitization, i.e., chromium depletion due to chromium carbide precipitation at grain boundaries. Conventional methods for preventing sensitization of austenitic stainless steels include reduction of carbon content in the material, stabilization of carbon atoms as non-chromium carbides by the addition of titanium, niobium or zirconium, local solution-heat-treatment by laser beam, etc. These methods, however, are not without drawbacks. Recent grain boundary structure studies have demonstrated that grain boundary phenomena strongly depend on the crystallographic nature and atomic structure of the grain boundary, and that grain boundaries with coincidence site lattices are immune to intergranular corrosion. The concept of "grain boundary design and control", which involves a desirable grain boundary character distribution, has been developed as grain boundary engineering. The feasibility of grain boundary engineering has been demonstrated mainly by thermomechanical treatments. In the present study, a thermomechanical treatment was tried to improve the resistance to the sensitization by grain boundary engineering. A type 304 austenitic stainless steel was pre-strained and heat-treated, and then sensitized, varying the parameters (pre-strain, temperature, time, etc.) during the thermomechanical treatment. The grain boundary character distribution was examined by orientation imaging microscopy. The intergranular corrosion resistance was evaluated by electrochemical potentiokinetic reactivation and ferric sulfate-sulfuric acid tests. The sensitivity to intergranular corrosion was reduced by the thermomechanical treatment and indicated a minimum at a small roll-reduction. The frequency of coincidence-site-lattice boundaries indicated a maximum at a small strain. The ferric sulfate-sulfuric acid test showed much smaller corrosion rate in the thermomechanically-treated specimen than in the base material. An excellent intergranular corrosion resistance was obtained by a small strain annealing at a relatively low temperature for long time. The optimum parameters created a uniform distribution of a high frequency of coincidence site lattice boundaries in the specimen where corrosive random boundaries were isolated. The results suggest that the thermomechanical treatment can introduce low energy segments in the grain boundary network by annealing twins and can arrest the percolation of intergranular corrosion from the surface.

• Korean Journal of Optics and Photonics
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• v.5 no.1
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• pp.74-79
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• 1994

The characteristics of the type I and type II SHG in LiB305 crystals grown by TSSG method have been investigated using 1064 nm beam from a Q-switched Nd:YAG laser. The measured phase matching angles and angular acceptance bandwidths were $\theta_m=90^{\circ}, \phi_m=11.6^{\circ}$, <$\delta\theta_{int}L_{1/2}=3.3^{\circ}-cm^{1/2}, \theta\phi_{int}L=0.27^{\circ}-cm^{1/2}$ for type I SHG and $\theta_m=20^{\circ}, \phi_m=90^{\circ}$, TEX>$\delta\theta_{int}L_=0.65^{\circ}-cm, \theta\phi_{int}L^{1/2}=3.5^{\circ}-cm^{1/2}$ for type II SHG, respectively. Thp. type I NCPM temperature of 1064 nm beam was found to be $149^{\circ}C$ with the temperature bandwidth $\DeltaTL$of $4.8^{\circ}C-cm$. An energy conversion efficiency of about 1.8% with 2.6 mm thick LBO crystal at an incident power of TEX>$171 MW/\textrm{cm}^2$ was demonstrated. The measured $d_{32} was 0.74\pm0.05 pm/V$..

• Proceedings of the Korean Vacuum Society Conference
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• 1999.07a
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• pp.117-117
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• 1999

최근 광소자와 더불어 발전과 더불어 고효율의 새로운 광소자에 대한 수요가 증가되고 있다. ZnO는 이러한 특성을 가진 재료중에 한가지로서 최근 들어 그 가능성에 대한 연구가 활발히 이루어지고 있다. 특히 상온에서 exciton binding energy가 다른 재료보다 큰 60meV로 고효율의 blue, UV 발광이 가능한 재료로 알려져 있다. 본 연구에서도 광소자로서 ZnO를 활용하기 위해서 RF magnetron sputtering법을 이용하기 위하여 광특성의 향상에 목적을 두고 연구하였다. ZnO 박막은 RF magnetron sputtering법을 이용하여 sapphire (0001) 기판위에 성장시켰다. RF power는 60W에서 120W까지 변화시켰고 박막의 성장온도는 55$0^{\circ}C$와 $600^{\circ}C$로 변화시켰으며, 박막의 성장시간은 60분, ZnO target과 기판과의 거리는 4.5cm로 하여 성장시켰다. 성장된 ZnO 박막은 XRD $\theta$-rocking scan 측정을 통해서 박막의 C-축 배향성과 RBS channeling를 이용하여 ZnO 박막의 epitaxial 성장 정도를 측정하였다. 박막의 상온 발광 특성은 He-Cd laser를 사용한 photoluminescence spectra로 측정하였다. 또한 표면의 morphology는 atomic force microscope(AFM)를 이용하여 관찰하였으며 transmission electron microscopy(TEM)을 사용하여 ZnO박막의 단면적을 관찰함으로서 grain의 성장과 광특성 및 결정성과의 영향에 대해서 연구하였다. ZnO 박막의 성장온도 55$0^{\circ}C$에서 RF power를 60W에서 120W까지 변화시킬 경우 XRD $\theta$-rocking peak의 반치폭이 0.157$^{\circ}$에서 0.436$^{\circ}$까지 변화하였고 80W에서 최소값을 가졌으며 in-plain에 대한 XRD 측정 결과 ZnO 박막의 성장은 sapphire 기판에 대해서 30$^{\circ}$회전되어 성장된 것으로 알 수 있었으며 이는 ZnO [100]∥ Al2O3[110]의 관계를 갖는다는 것을 나타낸다. 광특성의 측정 결과인 PL peak의 반치폭은 133.67meV에서 89.5meV까지 변화함을 알 수 있었고 80W에서 최대값을 가졌으며 이는 RF power의 변화에 따른 결정성의 변화와는 반대되는 현상임을 알 수 있었다. 그러나 성장온도 $600^{\circ}C$일때에는 XRD $\theta$-rocking peak의 반치폭이 0.129$^{\circ}$로 결정성이 우수한 박막임을 확인할 수 있었고 PL peak의 반치폭 또한 Ar과 O2의 비율에 따라 76.32meV에서 98.77meV로 광특성도 우수한 것으로 나타났다. RBS channeling 결과 55$0^{\circ}C$에서는 $\chi$min값이 50~60%였으나 $600^{\circ}C$일 때에는 $\chi$min값이 4~5%로 박막이 epitaxial 성장을 하였다는 것을 알 수 있었다. 결정성과 광특성과의 연관성을 알아보기 위해 TEM을 이용한 박막의 cross section image를 관찰한 결과 광특성이 우수한 시편일수록 grain의 크기가 큰 것으로 나타났고 결정성이 우수한 시편의 경우에서는 XRD분석 결과에서처럼 C-축배향성이 우수한 것을 확인할 수 있었다. 이상의 결과로부터 RF magnetron sputtering 법으로 광특성이 우수한 양질의 ZnO박막 성장이 가능하였다는 것을 알 수 있었으며 광소자로써의 가능성을 확인 할 수 있었다.

• Transactions of the Korean Society of Mechanical Engineers A
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• v.36 no.8
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• pp.929-934
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• 2012

This study was carried out to analyze the dynamic characteristics of laser tailor-welded blanks (TWBs) made of dissimilar materials. The analysis was performed using Hyper Works 10.0 with Solver LS-DYNA v.971. 2D-Shell was used as the modeling element, and the number of elements and nodes was 35,641 and 36,561, respectively. The impact speed was 10 km/h. To analyze the impact characteristics according to the height of the weld line for the upper and lower parts of the center pillar, the length of the lower part was set as 300 and 400 mm. When the lower part was made of SPFC980 steel with a length of 300 mm, the deformation was the smallest and the absorbed energy of the impact force was the largest. On based the lower part of center pillar, the position of TWB shows the shorter and the better value. In other words, the performance depended on the proportion of the upper part made of high-strength SABC1470 steel. A lower part made of SPFH590 steel showed large deformation. In contrast, a lower part made of SPFC980 steel showed significantly lesser deformation. Therefore, the impact performance of a lower part made of SPFC980 steel with a length of 300 mm showed the best analysis result.