• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.116-121
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• 1999

0.5 wt%Nb-doped SrTiO3(Nb: STO) thin film was prepared on MgO(100) single crystal substrates by Pulsed Laser Deposition (PLD). The Crystallinity and the orientation of Nb:STO thin films were characterized by XRD with changing the thin film processing condition-oxygen partial pressure, substrate temperature, deposition time and the distance between target and substrate. The orientation of Nb:STO thin film showed (100), (110) and (111) orientations at the substrate temperature of $700^{\circ}C$. The lattice parameter of Nb:STO decreased with increasing Po2 and showed 0.3905 nm at Po2=100 Pa, which was similar to that of the bulk. The thickness of Nb:STO thin film increased with increasing the deposition time and with decreasing the distance between target and substrate.

• Journal of the Korean Society for Precision Engineering
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• v.22 no.8 s.173
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• pp.165-173
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• 2005

This paper presents the results for deposition of micrometer-scale metal lines on glass for the development of TFT-LCD circuit repair-system. Although there had been a few studies in the late 1980's for the deposition of metallic interconnects by laser-induced chemical vapor deposition, those studies mostly used continuous wave lasers. In this work, a third harmonic Nd:YLF laser (351nm) of high repetition rates, up to 10 KHz, was used as the illumination source and W(CO)s was selected as the precursor. General characteristics of the metal deposit (tungsten) such as height, width, morphology as well as electrical properties were examined for various process conditions. Height of the deposited tungsten lines ranged from 35 to 500 m depending on laser power and scan speed while the width was controlled between 50um using a slit placed in the beam path. The resistivity of the deposited tungsten lines was measured to be below $1{\Omega}{\cdotu}um$, which is an acceptable value according to the manufacturing standard. The tungsten lines produced at high scan speed had good surface morphology with little particles around the patterns. Experimental results demonstrated that it is likely that the deposit forms through a hybrid process, namely through the combination of photolytic and pyrolytic mechanisms.

• Proceedings of the Korean Society of Laser Processing Conference
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• 2004.10a
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• pp.18-21
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• 2004

• Bulletin of the Korean Chemical Society
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• v.22 no.8
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• pp.914-916
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• 2001

• Proceedings of the KIEE Conference
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• 1996.07c
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• pp.1550-1552
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• 1996

Poly-Si films were deposited by Laser CVD using 193nm ArF Excimer Laser from disilane($Si_{2}H_{6}$) and then the films were etched by Laser Etching using the same Laser with SF6 etching gas. Dependence on various film deposition conditions and etching conditions was investigated respectively.

• Laser Solutions
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• v.5 no.2
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• pp.17-22
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• 2002

Characteristics of micro carbon structures fabricated with laser-induced chemical vapor deposition (LCVD) are investigated. An argon ion laser (λ＝514.5nm) and ethylene gas were utilized as the energy source and precursor, respectively. The laser beam was focused onto a graphite substrate to produce carbon deposit through thermal decomposition of the precursor. Average growth rate of a carbon rod increased for increasing laser power and pressure. Micro carbon rods with good surface quality were obtained at near the threshold condition. Micro carbon rods with aspect ratio of about 100 and micro tubular structures were fabricated to demonstrate the possible application of this method to the fabrication of three-dimensional microstructures. Laser Raman spectroscopic analysis of the micro carbon structures revealed that the carbon rods are consisting of amorphous carbon.

• Journal of Advanced Marine Engineering and Technology
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• v.20 no.5
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• pp.93-102
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• 1996

Laser-induced plume and laser-target interaction during pulsed laser deposition are demonstrated for a lead zirconate titanate (PZT). A KrF excimer laser (wavelength 248nm) was used and the laser was pulsed at 20Hz, with nominal pulse width of 20ns. The laser fluence was~$16J/cm^2,$ with 100mJ per pulse. The laser-induced plasma plume for nanosecond laser irradiation on PZT target has been investigated by optical emission spectra using an optical multichannel analyzer(OMA) and by direct observation of the plume using an ICCD high speed photography. OMA analysis showed two distinct ionic species with different expansion velocities of fast or slow according to their ionization states. The ion velocity of the front surface of the developing plume was about $10^7$cm/sec and corresponding kinetic energy was about 100eV. ICCD photograph showed another kind of even slower moving particles ejected from the target. These particles considered expelled molten parts of the target. SEM morphologies of the laser irradiated targets showed drastic melting and material removal by the laser pulse, and also showed the evidence of the molten particle ejection. The physics of the plasma(plume) formation and particle ejection has been discussed.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1627-1630
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• 2004

ZnO thin films on (001) sapphire substrates have been deposited by pulsed laser deposition(PLD) technique using an Nd:YAG laser with a wavelength of 266nm. Before post-annealing treatment in the oxygen ambient, the experiment of the deposition of ZnO thin films has been performed for substrate temperatures in the range of $300{\sim}450^{\circ}C$ and flow rate of 100${\sim}$700 seem. In order to investigate the effect of post-annealing treatment of ZnO thin films, films have been annealed at various temperatures after deposition. After post-annealing treatment in the oxygen ambient, the structural properties of ZnO thin films were characterized by X-ray diffraction(XRD) and the optical properties of the ZnO were characterized by photoluminescence(PL).

• Korean Journal of Materials Research
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• v.17 no.6
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• pp.303-307
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• 2007

ZnO thin films were prepared by pulsed laser deposition on amorphous fused silica substrates at different ambient $O_2$ pressures varying from 0.5 to 500 mTorr, to observe the effect of ambient gas on their crystalline structure, morphology and optical properties. Results of X-ray diffraction, scanning electron microscopy, atomic force microscopy and photoluminescence studies showed that crystallinity, surface features and optical properties of the films significantly depended on the oxygen background pressure during growth. A low oxygen pressure (0.5 mTorr) seems to be suitable for the growth of highly c-axis oriented and smoother films possessing a superior luminescent property. The films grown at the higher $O_2$ pressures (50-500 mTorr) were found to have many defects probably due to an excessive incorporation of oxygen into ZnO lattice. We speculate that the film crystallinity could be affected by the kinetics of atomic arrangement during deposition at the higher oxygen pressures.

• Journal of the Korean Ceramic Society
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• v.33 no.3
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• pp.313-320
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• 1996

We have fabricated an in-plane aligned a-axis oriented YBa2Cu3O7-x (a-YBCO) thin film on a LaSrGaO4(100) substrate with a PrBa2Cu3O7-x(PBCO) template layer by two step plused laser deposition using 308 nm XeCl excimer laser. A YBCO layer and PBCO layer grown at low temperatures were used as template layers. We have investigated the effect of the deposition temperature of template layers on the superconducting and struc-tural properties of in-plane aligned a-YBCO thin films. An optimal deposition temperature of the PBCO template layers was 630. In-plane aligned a-YBCO thin films showed an anisotropy ratio in resistivity of 11.5 and a zero resistance temperature of 88 K.