• Bulletin of the Korean Chemical Society
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• v.19 no.7
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• pp.738-742
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• 1998

A new polyamide was prepared from 4,4'-(hexafluoroisopropylidene)di-aniline and 4-[NN-bis(2-carboxyethyl)] amino-4'-nitrostilbene. This polymer was cast into thin films by spin coating cyclohexanone solution. After being poled, the electro-optic coefficients of electrode poled polymer films were measured by the reflection measurement technique using an incident laser beam of 1.3 Jim. The film poled at the field strength of 1.2 V/μm exhibited the electro-optic coefficient (r33) of 5.9 pm/V. The relaxation behavior of the poled polymer film was compared with other reported polymers bearing the same NLO chromophores. Due to stiff and highly polar nature of the backbone and also due to formation of interchain hydrogen bonds, this polymer reveals a slower relaxation characteristics. The polymer is amorphous and soluble in various organic solvents.

• Journal of the Korean Vacuum Society
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• v.15 no.3
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• pp.280-286
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• 2006

A distributed Bragg reflector (DBR) for the application of $1.3{\mu}m$ vertical cavity surface emitting laser (VCSEL) has grown by digital-alloy AlGaAs layer using the molecular beam epitaxy (MBE) method. The measured reflection spectra of the digital-alloy AlGaAs/GaAs DBR have uniformity in 0.35% over the 1/4 of 3-inch wafer. Furthermore, the TEM image showed that the composition and the thickness of the digital-alloy AlGaAs layer in AlGaAs/GaAs DBR was not affected by the temperature distribution over the wafer whole surface. Therefore, the digital-alloy AlGaAs/GaAs DBR can be used to get higher yield of VCSEL with the active medium of InAs quantum dots whose gain is inhomogeneously broadened.

• Journal of the Optical Society of Korea
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• v.19 no.6
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• pp.566-574
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• 2015

We report for the first time highly efficient trans-reflective color filters capable of demonstrating coloration in both transmission and reflection modes by taking advantage of a multilayer stack consisting of MgF₂ and TiO₂ used respectively as the low and high index materials. In order to enable such trans-reflective performance, securing an optimal stop band assuming an appropriate bandwidth within the visible regime is pivotal, which was realized by tailoring the thicknesses and the numbers of TiO₂-MgF₂ bi-layers. Three devices were designed through rigorous simulations and developed via e-beam evaporation to demonstrate vivid blue, green, and red colors in the reflection mode, and yellow, magenta, and cyan colors in the transmission mode, featuring an enhanced efficiency exceeding 90% under normal incidence. The color performance of the filters was examined by referring to the chromaticity coordinates of the transmission and reflection spectra, alongside photographed color images. The dependence of the performance on the angle of incidence was explored with respect to incident polarization, indicating that a transmission surpassing 60% could be stably maintained up to an angle of 75°. Polarization independent transfer characteristics were especially achieved for the normal incidence. The proposed devices may be readily extended to other spectral regimes by adjusting the thicknesses of the films.

• Korean Journal of Optics and Photonics
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• v.16 no.6
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• pp.553-559
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• 2005

Pulsed terahertz (THz) radiation was generated by optical rectification and detected by a fee space electro-optic sampling (FS-EOS) method. We used ZnTe (110) crystals for both generation and detection. By coating dielectric anti-reflection film on the ZnTe crystal surface, we can reduce the reflectance of a pump laser beam from $30\%$ to $2\%$, and the terahertz pulse amplitude increased $27\%$ compared with an uncoated crystal. A wider bandwidth of THz radiation was obtained by using a thinner crystal but the signal intensity was decreased in this case. And variations of THz radiation by changing orientation of the ZnTe crystal with respect to the pump (or probe) laser polarization, and by changing the power of the pump laser have also been investigated and discussed.

• Proceedings of the Korean Society of Near Infrared Spectroscopy Conference
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• 2001.06a
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• pp.1182-1182
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• 2001

In this study, the newly constructed optical measurement system, which was mainly composed of a parametric tunable laser and a near infrared photoelectric multiplier, was introduced to clarify the optical characteristics of wood as discontinuous body with anisotropic cellular structure from the viewpoint of the time-of-flight near infrared spectroscopy (TOF-NIRS). The combined effects of the cellular structure of wood sample, the wavelength of the laser beam λ, and the detection position of transmitted light on the time resolved profiles were investigated in detail. The variation of the attenuance of peak maxima At, the time delay of peak maxima Δt and the variation of full width at half maximum Δw were strongly dependent on the feature of cellular structure of a sample and the wavelength of the laser beam. The substantial optical path length became about 30 to 35 times as long as sample thickness except the absorption band of water. Δt ${\times}$ Δw representing the light scattering condition increased exponentially with the sample thickness or the distance between the irradiation point and the end of sample. Around the λ=900-950 nm, there may be considerable light scattering in the lumen of tracheid, which is multiple specular reflection and easy to propagate along the length of wood fiber. Such tendency was remarkable for soft wood with the aggregate of thin layers of cell walls. When we apply TOF-NIRS to the cellular structural materials like wood, it is very important to give attention to the difference in the light scattering within cell wall and the multiple specular-like reflections between cell walls. We tried to express the characteristics of the time resolved profile on the basis of the optical parameters for light propagation determined by the previous studies, which were absorption coefficient K and scattering coefficient S from Kubelka-Munk theory and n from nth power cosine model of radiant intensity. The wavelength dependency of the product of K/S and n, which expressed the light-absorbing and -scattering condition and the degree of anisotropy, respectively, was similar to that of the time delay of peak maxima Δt. The variation of the time resolved profile is governed by the combination of these parameters. So, we can easily find the set of parameters for light propagation synthetically from Δt.

• Korean Journal of Optics and Photonics
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• v.10 no.6
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• pp.500-506
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• 1999

We designed and fabricated a bidirectional optical transceiver module for low cost access network. An integrated chip forming a pin-PD on an 1.3 urn FP-LD was assembled by flip-chip bonding on a Si optical bench, a single mode fiber with an angled end facet was aligned passively with the integrated chip on V-groove of Si-optical bench. Gaussian beam theory was applied to evaluate the coupling coefficients as a function of some parameters such as alignment distance, angle of fiber end facet, vertical alignment error. The theory is also used to search the bottle-neck between transmittance and receiving coupling efficiency in the bi-directional optical system. Tn this paper, we confirmed that reduction of coupling efficiency by the vertical alignment error between laser beam and fiber core axis can be compensated by controlling the fiber facet angle. In the fabrication of sub-module, a'||'&'||' we made such that the fiber facet have a corn shape with an angled facet only core part, the reflection of transmitted laser beam from the fiber facet could be minimized below -35 dE in alignment distance of 2: 30 /J.m. In the same condition, transmitted output power of -12.1 dEm and responsivity of 0.2. AIW were obtained.

• Journal of the Korean Society for Precision Engineering
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• v.13 no.11
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• pp.64-72
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• 1996

This paper is aimed to develop an optical method for measuring 3-dimensional shapes of specular objects having curved surfaces. The existing methods measuring the shapes of specular objects have several common disadvantages: they may not work properly if the surface is highly specular like mirror surface or if the reflectance property is not uniform over the surface. And, they often require the a priori knowledege about the surface reflectance. To overcome these disadvantages, the measurement using double pass retroreflection method is proposed in this paper. For this measurement principle, an experimental measuring system is designed and prepared which is composed of a galvanometer scanner, a beam splitter, a laser source, a CCD camera, and a reflector made of retroreflective material. To verify the effectiveness of the measurement system a series of experiments are performaed for various specular objects. The results observed from the experiments show that the developed optical sensing system can be an effective mean of measuring the 3-D shapes of specular objects.

• Journal of Internet Computing and Services
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• v.9 no.3
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• pp.69-77
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• 2008

An algorithm for tracking the trace of structured light is proposed to obtain depth information accurately. The technique is based on the fact that the pixel location of light in an image has a unique association with the object depth. However, sometimes the projected light is dim or invisible due to the absorption and reflection on the surface of the object. A dynamic programming approach is proposed to solve such a problem. In this paper, necessary mathematics for implementing the algorithm is presented and the projected laser light is tracked utilizing a dynamic programming technique. Advantage is that the trace remains integrity while many parts of the laser beam are dim or invisible. Experimental results as well as the 3-D restoration are reported.

• Korean Journal of Optics and Photonics
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• v.9 no.6
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• pp.380-384
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• 1998

As the development of ultrahigh power laser system, the laser mirrors must require high-resistant and effectively cooled. So, the study for the optical multilayer systems having large thermal diffusivity become important. In this study, we designed and fabricated two-layer anti-reflection (AR) optical coating samples, in different evaporation conditions of coating speeds (10, 20 $\AA$/s) and substrate temperatures (50, 100, 150, 20$0^{\circ}C$), using two dielectric materials $MgF_2$ and ZnS which have different refractive indices and measured the through-plane thermal diffusivity by using photoacoustic effect. The optical thicknesses of $MgF_2$ and ZnS layer were fixed as 5/4λ (λ=514.5nm) and λ, respectively, and the thermal diffusivity of the samples fabricated in the different conditions was obtained from the measured amplitude of photoacoustic signals by changing chopping frequency of $Ar^+$ layer beam. The results told us that the thermal diffusivity of the sample fabricated in the condition of 10 $\AA$/s and 15$0^{\circ}C$ showed the largest value.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.342-343
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• 2013

AlSb is a promising material for optical devices, particularly for high-frequency and nonlinear-optical applications. And AlSb offers significant potential for devices such as quantum-well lasers, laser diodes, and heterojunction bipolar transistors. In this work we study molecular beam epitaxy (MBE) growth of an unstrained AISb film on a GaAs substrate and identify the real-time monitoring capabilities of in situ spectroscopic ellipsometry (SE). The samples were fabricated on semi-insulating (0 0 1) GaAs substrates using MBE system. A rotating sample stage ensured uniform film growth. The substrate was first heated to $620^{\circ}C$ under As2 to remove surface oxides. A GaAs buffer layer approximately 200 nm- thick was then grown at $580^{\circ}C$. During the temperature changing process from $580^{\circ}C$ to $530^{\circ}C$, As2 flux is maintained with the shutter for Ga being closed and the reflection high-energy electron diffraction (RHEED) pattern remaining at ($2{\times}4$). Upon reaching the preset temperature of $530^{\circ}C$, As shutter was promptly closed with Sb shutter open, resulting in the change of RHEED pattern from ($2{\times}4$) to ($1{\times}3$). This was followed by the growth of AlSb while using a rotating-compensator SE with a charge-coupled-device (CCD) detector to obtain real-time SE spectra from 0.74 to 6.48 eV. Fig. 1 shows the real time measured SE spectra of AlSb on GaAs in growth process. In the Fig. 1 (a), a change of ellipsometric parameter ${\Delta}$ is observed. The ${\Delta}$ is the parameter which contains thickness information of the sample, and it changes in a periodic from 0 to 180o with growth. The significant change of ${\Delta}$ at~0.4 min means that the growth of AlSb on GaAs has been started. Fig. 1b shows the changes of dielectric function with time over the range 0.74~6.48 eV. These changes mean phase transition from pseudodielectric function of GaAs to AlSb at~0.44 min. Fig. 2 shows the observed RHEED patterns in the growth process. The observed RHEED pattern of GaAs is ($2{\times}4$), and the pattern changes into ($1{\times}3$) with starting the growth of AlSb. This means that the RHEED pattern is in agreement with the result of SE measurements. These data show the importance and sensitivity of SE for real-time monitoring for materials growth by MBE. We performed the real-time monitoring of AlSb growth by using SE measurements, and it is good agreement with the results of RHEED pattern. This fact proves the importance and the sensitivity of SE technique for the real-time monitoring of film growth by using ellipsometry. We believe that these results will be useful in a number of contexts including more accurate optical properties for high speed device engineering.