• International Journal of Precision Engineering and Manufacturing
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• 제9권4호
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• pp.26-31
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• 2008

A precision four-degree-of-freedom measurement system has been developed for simultaneous measurement of four motion errors of a linear stage, which include straightness and angular errors, The system employs a retro-reflector to detect the straightness errors and a plane mirror to detect the angular errors. A common-path compensation method for laser beam drift is put forward, and the experimental results show that the influences of beam drift on four motion errors can be reduced simultaneously. In comparison with the API 5D laser measuring system, the accuracy for straightness measurement is about ${\pm}1.5{\mu}m$ within the measuring range of ${\pm}650{\mu}m$, and the accuracy for pitch and yaw measurements is about ${\pm}1.5$ arc-seconds within the range of ${\pm}600$ arc-seconds.

• 한국광학회지
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• 제15권1호
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• pp.68-73
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• 2004

간섭계를 이용한 링레이저 자이로의 플렉셔 각도 측정기법이 연구되었다. Dummy mass를 추가하여 중력가속도 이상의 고가속도 환경을 구현하였으며, 이에 따른 피에조 간섭무늬의 변화로부터 자이로 입력축의 단위 중력가속도에 대한 플렉셔 각도 변화를 조사하였다. 링레이저 자이로가 가지는 플렉셔 각도 변화계수는 2.37 arcsec/g로,플렉셔 측정 반복도 오차는 0.07arcsec/g정도로 측정되었다. 플렉셔 각도를 감소시켰을 때, 링레이저 자이로 관성항법장치의 플렉셔 오차가 뚜렷이 개선됨을 확인하였다.

• 한국정밀공학회지
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• 제27권10호
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• pp.14-22
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• 2010

The most costly and time-consuming process in the fabrication of today's multi-layer circuit board is drilling interconnection holes between adjacent layers and via holes within a layer. Decreasing size of via holes being demanded and growing number of via holes per panel increase drilling costs. Component density and electronic functionality of today's multi-layer circuit boards can be improved with the introduction of cost-effective, variable depth laser drilled blind micro via holes, and interconnection holes. Laser technology is being quickly adopted into the circuit board industry but can be accelerated with the introduction of a true production laser drilling system. In order to get optimized condition for drilling to FPCB (Flexible Printed Circuit Board), we use various drill pattern as drill step. For productivity, we investigate drill path optimization method. And for the precise drilling the thermal drift of scanner and temperature change of scan system are tested.

• 분석과학
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• 제13권2호
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• pp.222-228
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• 2000

비분산 적외선 방식에 의한 대기 중 일산화 탄소 측정용 검출기를 제작하고, 감도 및 안정성을 조사하였다. 검출 감도를 향상시키기 위하여 동일 흡수셀 내에 3개의 반사거울을 장착하여 셀 안에서의 빛의 통과거리가 증가되도록 설계하였다. 50cm 길이의 셀 안에서 빛의 통과거리를 16m까지 늘릴 수 있도록 컴퓨터 모사에 의해 반사거울의 곡률반경 및 곡률중심, 셀 안에서의 위치 등을 산출하여 셀을 제작하였다. 빛의 경로와 광학적 특성은 모의 셀 안에서 laser beam alignment에 의해 확인하였다. 투과광의 검출에는 광전도성 PbSe센서를 사용하였으며, 센서소자는 열전냉각방식에 의해 냉각하였다. 제작된 일산화 탄소 검출기의 검출한계와 스팬 드리프트는 각각 0.24ppm과 0.03ppm(v/v)이었다.

• Current Optics and Photonics
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• 제2권2호
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• pp.195-202
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• 2018

A Scanning Rayleigh Doppler lidar for wind profiling based on a non-polarized beam splitter cube optically contacted FPI is developed for wind measurement from high troposphere to low stratosphere in 5-35 km. Non-polarized beam splitter cube optically contacted to the FPI are used for a stable optical receiver. Zero Doppler shift correction is used to correct for laser or FPI frequency jitter and drift and the timing sequence is designed. Stability of the receiver for Doppler shift discrimination is validated by measuring the transmissions of FPI in different days and analyzed the response functions. The maximal relative wind deviation due to the stability of the optical receiver is about 4.1% and the standard deviation of wind velocity is 1.6% due to the stability. Wind measurement comparison experiments were carried out in Jiuquan ($39.741^{\circ}N$, $98.495^{\circ}E$), Gansu province of China in 2015, showing good agreement with radiosonde result data. Continuous wind field observation was performed from October 16th to November 12th and semi-continuous wind field of 19 nights are presented.

• 대한의용생체공학회:의공학회지
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• 제24권2호
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• pp.83-89
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• 2003

기체전자증폭기는 기존의 기체검출기의 표류공간에 위치하여 표류전기장을 매우 짧은 거리에 걸쳐 전자사태가 가능한 세기(〉 $10^4$ V/cm) 이상으로 압축함으로써 기체이득을 향상시키는 개념적으로 간단한 기구이다 이 기구는 양면이 금속(구리)으로 얇게 코팅된 수십 $\mu\textrm{m}$ 두께의 절연성 foil에 화학적 에칭이나 고출력 레이저빔 천공방법을 이용하여 직경 100 $\mu\textrm{m}$ 이하의 미소 hole들을 100-200 $\mu\textrm{m}$ 간격으로 균일하게 뚫어 놓은 구조로 되어 있다. 본 연구에서는 다양한 실험조건에서 기체전자증폭기의 동작특성을 조사하였으며 또한 기체전자증폭기의 섬광특성을 이용하여 표준 CCD 카메라와 결합하여 X-선 영상을 획득함으로써 디지털 X-선 영상센서로서의 가능성을 제시하였다.

• Transactions on Electrical and Electronic Materials
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• 제4권6호
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• pp.9-12
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• 2003

The electrical properties of stabilized amorphous selenium typical of the material used in direct conversion x-ray imaging devices are reported. Carrier mobility was measured using time-of-flight (TOF) measurements to investigate the transport properties of holes and electrons in stabilized a-Se film. A laser beam with pulse duration of 5 ns and wavelength of 350nm was illuminated on the surface of a-Se with thickness of 400 $\mu\textrm{m}$. The photo induced signals of a-Se film as a function of time were measured. The measured transit times of hole and electron were about 8.73${\mu}\textrm{s}$ and 229.17${\mu}\textrm{s}$, respectively. The hole and electron drift mobilities decreases with increase of electric field up to 4V/$\mu\textrm{m}$. Above 4V/$\mu\textrm{m}$, the measured drift mobilities exhibited no observable dependence with respect to electric field. The experimental results showed that the hole and electron drifting mobility were 0.04584 $\textrm{cm}^2$ V$\^$-1/s$\^$-1/ sand 0.00174 $\textrm{cm}^2$V$\^$-1/s$\^$-1/ at 10 V/$\mu\textrm{m}$.

• 한국광학회지
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• 제23권2호
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• pp.71-76
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• 2012

Sagnac 형태로 변형된 Mach-Zehnder 간섭계(SMZI)는 모든 광경로가 동일한 광부품을 서로 공유하기 때문에 위상 흔들림을 최소화할 수 있는 안정된 간섭계이다. 본 연구에서는 단일광자 수준까지 감쇄시킨 레이저 광과 제 2형의 매개하향변환에서 발생한 편광 상관관계가 있는 광자로부터 준비된 단일광자를 이용한 간섭실험에서 매우 안정된 간섭무늬를 관측하였다. SMZI의 위상은 약 ${\pm}0.18$ rad으로 안정적인 반면에 보통의 MZI는 ${\pm}1.02$ rad의 위상 요동을 나타내었다.

• Transactions on Electrical and Electronic Materials
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• 제8권6호
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• pp.250-254
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• 2007

Applying the moving photo-carrier grating(MPG) technique and time-of-flight(TOF) measurements, we studied the transport properties of stabilized amorphous selenium typical of the material used in direct conversion X-ray imaging devices. For MPG measurement, we obtained electron and hole mobility and the recombination lifetime of $\alpha-Se$ films with arsenic(As) additions. We found an apparent increase in hole drift mobility and recombination lifetime, especially when 0.3 % As was added into $\alpha-Se$ film, whereas electron mobility decreased with the addition of As due to the defect density. For TOF measurement, a laser beam with pulse duration of 5 ns and wavelength of 350 nm was illuminated on the surface of $\alpha-Se$ with a thickness of 400 ${\mu}m$. The measured hole and electron transit times were about 8.73 ${\mu}s$ and 229.17 ${\mu}s$, respectively.