• Korean Journal of Optics and Photonics
• /
• v.11 no.6
• /
• pp.434-440
• /
• 2000

We fabricated a high power Nd:YAG laser pumped by a 1 kW diode laser with a Lambertian-type diffusive reflector. Maximum cw power of 500 W with a slope efficiency of 49%, which corresponds to an optical efficiency of 46.7%, was obtained from a short linear resonator when a 5 mm rod was used. The efficiencies decreased when a 6 mm rod was used, due to the poor quality of the absorption distribution in the rod. The measured beam quality factor of 70, which is slightly smaller than the value calculated from the measured thermal focal lengths, shows that the absorption distribution in the rod is fairly uniform. iform.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.207-207
• /
• 2010

Both ZnO and GaN have excellent physical properties in optoelectronic devices such as blue light emitting diode (LED), blue laser diode (LD), and ultra-violet (UV) detector. The ZnO/GaN heterostructure, which has a potential to achieve the cost efficient LED technology, has been fabricated by using radio frequency (RF) sputtering, pyrolysis, metal organic chemical vapor deposition (MOCVD), direct current (DC) arc plasmatron, and pulsed laser deposition (PLD) methods. Among them, the PLD system has a benefit to control the composition ratio of the grown film from the mixture target. A 500-nm-thick ZnO film was grown by PLD technique on c-plane GaN/sapphire substrates. The post annealing process was executed at some varied temperature between from $300^{\circ}C$ to $900^{\circ}C$. The morphology and crystal structural properties obtained by using atomic force microscope (AFM) and x-ray diffraction (XRD) showed that the crystal quality of ZnO thin films can be improved as increasing the annealing temperature. We will discuss the post-treatment effect on film quality (uniformity and reliability) of ZnO/GaN heterostructures.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2006.06a
• /
• pp.477-478
• /
• 2006

Characteristics of InAs/GaAs quantum dot (QD) ridge laser diodes (LDs) are investigated for high-power $1.3\;{\mu}m$ applications. For QD ridge LDs with a $5-{\mu}m$-wide stripe and a 1-mm-long cavity, the emission wavelength of 1284.1 nm, the single-uncoated-facet CW output power as high as 90 mW, the external efficiency of 0.31 W/A and the threshold current density of $800\;mA/cm^2$ are obtained. The linewidth enhancement factor ($\alpha$-factor) is successfully measured to be between 0.4 and 0.6, which are about four times as small values with respect to conventional quantum well structure. It is possible that this result significantly reduce the filamentation of far-field profiles resulting in better beam quality for high power operation.

• Korean Journal of Optics and Photonics
• /
• v.30 no.5
• /
• pp.193-196
• /
• 2019

The design and control of thermal flow is important for the operation of high-power laser diodes (LDs). It is necessary to analyze and improve the thermal bottleneck near the active layer of an LD. As the error in prediction of the thermal resistance of an LD is large, typically due to the hyperbolic increase and saturation to linear increase of the thermal resistance as a function of thickness, it is helpful to use a simple, modified divergence model for the improvement and optimization of thermal resistance. The characteristics of LDs are described quite well, in that the values for simulated thermal resistance curves and the thermal cross section followed are almost the same as the values from the model function. Also, the thermal-cross-section curve obtained by differentiating the thermal resistance is good for identifying thermal bottlenecks intuitively, and is also fitted quite well by the model proposed for both a typical LD structure and an improved LD with thin capping and high thermal conductivity.

• Proceedings of the Optical Society of Korea Conference
• /
• 2002.07a
• /
• pp.208-209
• /
• 2002

지금까지의 광학적 비접촉 진동 측정 시스템에서는 레이저도플러 효과를 이용하고 있다(1)(2). 그러나 이는 시스템 자체가 너무 크고 많은 장비들을 요구하는 단점을 가지고 있다. 본 실험은 장비의 속도와 크기를 개선하기 위해 이전까지의 방법과는 다른 시스템을 구성하여, 빠르게 회전하거나 진동하는 물체의 진동을 쉽고 간결하게 측정할 수 있는 장비와 프로그램을 설계, 제작하였다. 광원으로는 파장이 650nm인 LD(laser diode)를 사용하였고, 신호검출에는 1차원 PSD(position-sensitive detection)를 사용하여 시스템을 소형으로 구성하였다. (중략)

• Proceedings of the Optical Society of Korea Conference
• /
• 2003.02a
• /
• pp.48-49
• /
• 2003

저출력 다이오드 여기 레이저에서는 공간모드 특성을 좋게하고 여기 효율을 올리기 위하여 단면 여기 방식을 주로 사용한다. 특히 레이저 다이오드 (LD)로 여기하는 단일모드 녹색광 레이저는 홀로그램, 간섭계, 측정기 등의 응용분야에서 수요가 날로 증가하고 있다. 단일모드 녹색광 레이저의 발진방법으로는 여러 가지가 고안되어 왔다. 먼저 공진기 내부에 얇은 판을 브루스터 (Brewster) 각으로 두어서 편광시키고 이것을 복굴절특성을 가진 Nd：YVO$_4$ 결정과 결합시켜 복굴절 필터 기능을 하게 하는 방법이 있다. (중략)

• Current Optics and Photonics
• /
• v.2 no.6
• /
• pp.582-588
• /
• 2018

A $Nd:YVO_4$ laser dual-end-pumped by a wavelength-locked 878.6 nm laser diode is presented. At the repetition rate of 500 KHz, the absorbed pump power of 58 W, an output power of 26.1 W at 1064 nm is obtained, corresponding to an optical-optical efficiency of 45%. The pulse width is 44.2 ns. Meanwhile, the effects of traditional 808 nm pumping and 878.6 nm dual-end-pumping on the output laser beam quality and pulse width are compared and analyzed in an experiment.

• Korean Journal of Optics and Photonics
• /
• v.21 no.2
• /
• pp.74-81
• /
• 2010

A modeling methodology for the analysis of injection-locked Fabry-Perot laser diodes (FP-LDs), promising for cost-effective WDM-PON sources, is proposed. The time-domain large-signal model that is used is found to provide quite similar results to some experimental ones. With our methodology, we model characteristics of FP-LDs, such as influence of reflectivity at a facet and detuning on injection-locking. The eye diagram characteristics are also investigated. It is observed that the facet reflectivity at the injection side should be lower than 1% to provide stable operation in terms of good side-mode suppression ratio and independence from detuning between narrow-band injection noise and LD modes. It is also observed that good eye opening can be obtained for 155 Mbps modulation while the parameters such as the active region thickness should be properly optimized to obtain reasonable eye opening at 1.25 Gbps.

• Current Optics and Photonics
• /
• v.6 no.2
• /
• pp.191-195
• /
• 2022

We investigate the lateral far-field pattern characteristics, including divergence angle change and far-field pattern analysis as output power increases, of narrow-emitter-width 850 nm GaAs/AlGaAs laser diodes (LDs). Each LD has a cavity of 1200 and 1500 ㎛ and narrow emitter width of 2.4 ㎛ for the top and 4.6 ㎛ for the bottom. The threshold currents are 35 and 40 mA, and L-I kinks appear at power levels of 326 and 403 mW, respectively. The divergence angle tends to increase due to the occurrence of first-order lateral mode and the thermal lensing effect. But with the L-I kink, the divergence angle decreases and the far-field pattern becomes asymmetric. This is due to coherent superposition between the fundamental and the first-order lateral mode. We provide detailed explanations for these observations based on high-power laser diode simulation results.

• Proceedings of the Korean Society for Technology of Plasticity Conference
• /
• 2004.05a
• /
• pp.105-108
• /
• 2004

The effect of thermal deformation of optical pick-up due to laser diode(LD) and LD driving integrated circuit on the optical performance of digital versatile disk(DVD) optical system was analyzed using the finite element analysis with initial surface residual stress conditions, and results were compared with the measured results with holographic interferometry. Ray tracing was performed using the deformed configuration of optical system.