• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.285-285
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• 2016

Resistive random access memory devices have been widely studied due to their high performance characteristics, such as high scalability, fast switching, and low power consumption. However, fluctuation in operational parameters remains a critical weakness that leads to device failures. Although the random formation and rupture of conducting filaments (CFs) in an oxide matrix during resistive switching processes have been proposed as the origin of such fluctuations, direct observations of the formation and rupture of CFs at the device scale during resistive switching processes have been limited by the lack of real-time large-area imaging methods. Here, a novel imaging method is proposed for monitoring CF formation and rupture across the whole area of a memory cell during resistive switching. A hybrid structure consisting of a resistive random access memory and a light-emitting diode enables real-time monitoring of CF configuration during various resistive switching processes including forming, semi-forming, stable/unstable set/reset switching, and repetitive set switching over 50 cycles.

• Nuclear Engineering and Technology
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• v.53 no.8
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• pp.2640-2645
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• 2021

We report the development of a gamma-ray imaging device, named Large-Area Hybrid Gamma Imager (LAHGI), featuring high imaging sensitivity and good imaging resolution over a broad energy range. A hybrid collimation method, which combines mechanical and electronic collimation, is employed for a stable imaging performance based on large-area scintillation detectors for high imaging sensitivity. The system comprises two monolithic position-sensitive NaI(Tl) scintillation detectors with a crystal area of 27 × 27 cm² and a tungsten coded aperture mask with a modified uniformly redundant array (MURA) pattern. The performance of the system was evaluated under several source conditions. The system showed good imaging resolution (i.e., 6.0-8.9° FWHM) for the entire energy range of 59.5-1330 keV considered in the present study. It also showed very high imaging sensitivity, successfully imaging a 253 µCi ¹³⁷Cs source located 15 m away in 1 min; this performance is notable considering that the dose rate at the front surface of the system, due to the existence of the ¹³⁷Cs source, was only 0.003 µSv/h, which corresponds to ~3% of the background level.

• 한국정보디스플레이학회:학술대회논문집
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• 2005.07a
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• pp.575-579
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• 2005

A beautiful, flexible active-matrix electrophoretic display (AM-EPD) device is reported. The flexible AM-EPD device has a $40.0{\times}30.0\;mm^2$ display area, measures about 0.27 mm in thickness, weighs about 0.45 g and possesses only 20 external connections. The flexible AM-EPD device displays clear black-and-white images with 5 gray-scales on $160{\times}120$ pixels. The display is free from residual image problems, because we use an area-gray-scale method on $320{\times}240$ EPD elements, each of which is driven with binary signals. Each pixel consists of 4 EPD elements. In addition, since the response time of the electrophoretic material is as long as approximately 400 ms and since the display possesses a large number of EPD elements, we have developed a special driving method suitable for changing EPD images comfortably. A complete image is formed on the AM-EPD device, consisting of a reset frame and several, typically 6, image frames.

• Transactions on Electrical and Electronic Materials
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• v.12 no.2
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• pp.43-50
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• 2011

Carbon-nanotube metal oxide semiconductor field effect transistor (CN-MOSFET) is a promising future device candidate. The electrical characteristics of 16 nm N-type CN-MOSFETs are explored in this paper. The optimum N-type CN-MOSFET device profiles with different number of tubes are identified for achieving the highest on-state to off-state current ratio ($I_{on}/I_{off}$). The influence of substrate voltage on device performance is also investigated in this paper. Tradeoffs between subthreshold leakage current and overall switch quality are evaluated with different substrate bias voltages. Technology development guidelines for achieving high-speed, low-leakage, area efficient, and manufacturable carbon nanotube integrated circuits are provided.

• 한국정보디스플레이학회:학술대회논문집
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• 2006.08a
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• pp.556-559
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• 2006

We successfully developed a high performance and highly reliable blazed GxL device with a high optical efficiency and a high contrast ratio. The device demonstrated superior resistance against a high power laser, which is suitable for a large-area laser projector. We operated the world's largest laser projection screen using this device at the 2005 World Exposition in Aichi, Japan, problem free.

• Laser Solutions
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• v.18 no.3
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• pp.6-8
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• 2015

Finishing process includes deburring, polishing and edge radiusing. It improves the surface profile of specimen and eliminates the alien substance on surface. Deburring is the elimination process for debris of edges. Polishing lubricates surfaces by rubbing or chemical treatment. There are two types for electron finishing. The one is using pulse beam. The other is using the convergent and scanning electron beam. Pulse type device appropriates the large area process. But it does not control the beam dosage. Scanning type device has advantages for dosage control and edge deburring. We design the convergence and scan type. It has magnetic lenses for convergence and scan device for scanning beam. Magnetic lenses consist of convergent and objective lens. The lenses are designed by the specification(beam size and working distance). In this paper, we evaluate the convergence performance by pattern process. Also, we analysis the results and important factors for process. The important factors for process are beam size, pressure, stage speed and vacuum. These results will be utilized into systematizing pattern shape and the factors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.11a
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• pp.506-509
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• 2002

In this paper. we give pressure stimulation into organic ultra thin films and detected the induced displacement current proper ties, and then manufacture a device under the accumulation condition. In processing of a device manufacture. And electroluminescence(EL) from conjugated polymers has recently received great attention because polymer light-emitting diodes(LEDs) clealy have potential for applications such as large-area displays. The operation of polymer LEDs is based on double injection of electrons and holes from the elextrodes. followed by formation of excitons whose radiative decay results in light emission at wavelength characteristic to the material. In this paper, we fabricated the single layer EL device using $Alq_3$ as emitting material. According as turn on voltage could know about 5.5V in voltage-current characteristics and voltage rise, current could see that increase as non-linear, Current and ruminance can see that express similar relativity in voltage, and could know that ruminance is expressing current relativity.

• Proceedings of the Korean Vacuum Society Conference
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• 2016.02a
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• pp.329-329
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• 2016

Large-area graphene films produced by means of chemical vapor deposition (CVD) are polycrystalline and thus contain numerous grain boundaries that can greatly degrade their performance and produce inhomogeneous properties. A better grain boundary engineering in CVD graphene is essential to realize the full potential of graphene in large-scale applications. Here, we report a defect-selective atomic layer deposition (ALD) for stitching grain boundaries of CVD graphene with ZnO so as to increase the connectivity between grains. In the present ALD process, ZnO with hexagonal wurtzite structure was selectively grown mainly on the defect-rich grain boundaries to produce ZnO-stitched CVD graphene with well-connected grains. For the CVD graphene film after ZnO stitching, the inter-grain mobility is notably improved with only a little change in free carrier density. We also demonstrate how ZnO-stitched CVD graphene can be successfully integrated into wafer-scale arrays of top-gated field effect transistors on 4-inch Si and polymer substrates, revealing remarkable device-to-device uniformity.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.87.2-87.2
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• 2015

Transparent conductors are commonly used in photoelectric devices, where the electric energy converts to light energy or vice versa. Energy consumption devices, such as LEDs, Displays, Lighting devices use the electrical energy to generate light by carrier recombination. Meanwhile, solar cell is the only device to generate electric energy from the incident photon. Most photoelectric devices require a transparent electrode to pass the light in or out from a device. Beyond the passive role, transparent conductors can be employed to form Schottky junction or heterojunction to establish a rectifying current flow. Transparent conductor-embedded heterojunction device provides significant advantages of transparent electrode formation, no need for intentional doping process, and enhanced light-reactive surface area. Herein, we present versatile applications of transparent conductors, such as NiO, ZnO, ITO in photoelectric devices of solar cells and photodetectors for high-performing UV or IR detection. Moreover, we also introduce the growth of transparent ITO nanowires by sputtering methods for large scale application.