• 공업화학
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• 제31권5호
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• pp.539-544
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• 2020

본 연구에서는 넓은 면적의 나노필라 배열 필름을 기반으로 포토 및 소프트 리소그래피 기술과 화학적 희석 고분자 중합을 조절하여 3차원 다공성의 폴리아닐린 필름을 제조하였다. 3차원 폴리아닐린 필름은 계층 간 연결된 폴리아닐린 나노파이버들로 구성되어 있어, 넓은 표면적과 개방형의 다공성 구조를 가지는 3차원 계층형 나노웹 필름을 형성한다. 전기화학분석법을 기반으로 3차원 폴리아닐린 필름이 유연한 pH 센서 전극이 되는 것을 증명하였다. 3차원 폴리아닐린 필름은 이상적인 네른스트 거동과 근접한 60.3 mV/pH의 높은 민감도를 보였다. 또한, 3차원 폴리아닐린 전극은 10 min의 빠른 반응 속도, 우수한 반복성 그리고 높은 선택성을 나타내었다. 3차원 폴리아닐린 전극을 기계적으로 굽힌 상태에서 센서 특성을 측정하였을 때, 전극이 60.4 mV/pH의 높은 민감도를 보여줌으로써, 유연한 pH 센서 성능을 증명하였다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.324-325
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• 2014

Quantum wells infrared photodetectors (QWIPs) have been used to detect infrared radiations through the principle based on the localized stated in quantum wells (QWs) [1]. The mature III-V compound semiconductor technology used to fabricate these devices results in much lower costs, larger array sizes, higher pixel operability, and better uniformity than those achievable with competing technologies such as HgCdTe. Especially, GaAs/AlGaAs QWIPs have been extensively used for large focal plane arrays (FPAs) of infrared imaging system. However, the research efforts for increasing sensitivity and operating temperature of the QWIPs still have pursued. The modification of heterostructures [2] and the various fabrications for preventing polarization selection rule [3] were suggested. In order to enhance optical performances of the QWIPs, double barrier quantum well (DBQW) structures will be introduced as the absorption layers for the suggested QWIPs. The DBWQ structure is an adequate solution for photodetectors working in the mid-wavelength infrared (MWIR) region and broadens the responsivity spectrum [4]. In this study, InGaAs/GaAs/AlGaAs double barrier quantum well infrared photodetectors (DB-QWIPs) are successfully fabricated and characterized. The heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIPs are grown by molecular beam epitaxy (MBE) system. Photoluminescence (PL) spectroscopy is used to examine the heterostructures of the InGaAs/GaAs/AlGaAs DB-QWIP. The mesa-type DB-QWIPs (Area : $2mm{\times}2mm$) are fabricated by conventional optical lithography and wet etching process and Ni/Ge/Au ohmic contacts were evaporated onto the top and bottom layers. The dark current are measured at different temperatures and the temperature and applied bias dependence of the intersubband photocurrents are studied by using Fourier transform infrared spectrometer (FTIR) system equipped with cryostat. The photovoltaic behavior of the DB-QWIPs can be observed up to 120 K due to the generated built-in electric field caused from the asymmetric heterostructures of the DB-QWIPs. The fabricated DB-QWIPs exhibit spectral photoresponses at wavelengths range from 3 to $7{\mu}m$. Grating structure formed on the window surface of the DB-QWIP will induce the enhancement of optical responses.