• Journal of the Korean Applied Science and Technology
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• v.14 no.3
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• pp.89-95
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• 1997

It is well known that the metallo-phthalocyanine(MPcs) are sensitive to toxic gaseous molecules such as $NO_2$ and also chemically and thermally stable. Therefore, lots of MPcs have been studied for the potential chemical sensor for $NO_2$ gas using quartz crystal microbalance or electrical conductivity. In this study, 2,3,9,10,16,17,23,24-[octa-(dodecyloxy)] copper phthalocyanine and 2,3,9,10,16,17,23,24-[octa-(octyloxy)] copper phthalocyanine were synthesized and their possibility of LB film preparation were tested. It was confirmed by using FT-IR, DSC, NMR, UV-Vis absorption spectroscopy and Elemental Analysis that CuPc derivatives were successfully synthesized. From the ${\pi}$-A characteristics and limiting areas of two CuPc derivatives it was found that the preparation of LB films with these CuPc derivatives is possible.

• Bulletin of the Korean Chemical Society
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• v.19 no.5
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• pp.549-553
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• 1998

The structure and layer distribution of cadmium arachidate Langmuir-Blodgett film were analyzed by the small angle X-ray reflectivity measurements using synchrotron radiation. Y-to X type transition was ocurred during the 39th passage of deposition of cadmium arachidate. Based on the measurement of the consumed area of the monolayer, it was determined that about 27.5 layer was deposited. Using the synchrotron X-ray, the reflectivity profile of cadmium arachidate LB film over the wide range of grazing angle was obtained. The X-ray reflectivity profile was analyzed using the recursion formula. By fitting the location and dispersion of the subsidiary maxima between the Bragg peaks of the measured reflectivity profile with that of the calculated reflectivity profile, the average thickness and the distribution of layer thickness were evaluated. The genetic algorithm was adopted to the fitting of reflectivity profile to evaluate the optimum value of the number distribution of layer. Based on the morphology measurement with an atomic force microscopy (AFM), the domain structure and mean roughness of LB films were obtained. The mean roughness value calculated based on the number of layer distribution obtained from the measurement by AFM is consistent with that obtained from X-ray reflectivity analysis.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.186-186
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• 2000

After LeComber et al. reported the first amorphous hydrogenated silicon (a-Si: H) TFT, many laboratories started the development of an active matrix LCDs using a-Si:H TFTs formed on glass substrate. With increasing the display area and pixel density of TFT-LCD, however, high mobility TFTs are required for pixel driver of TF-LCD in order to shorten the charging time of the pixel electrodes. The most important of these drawbacks is a-Si's electron mobiliy, which is the speed at which electrons can move through each transistor. The problem of low carier mobility for the a-Si:H TFTs can be overcome by introducing polycrystalline silicon (poly-Si) thin film instead of a-Si:H as a semiconductor layer of TFTs. Therefore, poly-Si has gained increasing interest and has been investigated by many researchers. Recnetly, fabrication of such poly-Si TFT-LCD panels with VGA pixel size and monolithic drivers has been reported, . Especially, fabricating poly-Si TFTs at a temperature mach lower than the strain point of glass is needed in order to have high mobility TFTs on large-size glass substrate, and the monolithic drivers will reduce the cost of TFT-LCDs. The conventional methods to fabricate poly-Si films are low pressure chemical vapor deposition (LPCVD0 as well as solid phase crystallization (SPC), pulsed rapid thermal annealing(PRTA), and eximer laser annealing (ELA). However, these methods have some disadvantages such as high deposition temperature over $600^{\circ}C$, small grain size (<50nm), poor crystallinity, and high grain boundary states. Therefore the low temperature and large area processes using a cheap glass substrate are impossible because of high temperature process. In this study, therefore, we have deposited poly-Si thin films on si(100) and glass substrates at growth temperature of below 40$0^{\circ}C$ using newly developed high rate magnetron sputtering method. To improve the sputtering yield and the growth rate, a high power (10~30 W/cm2) sputtering source with unbalanced magnetron and Si ion extraction grid was designed and constructed based on the results of computer simulation. The maximum deposition rate could be reached to be 0.35$\mu$m/min due to a high ion bombardment. This is 5 times higher than that of conventional sputtering method, and the sputtering yield was also increased up to 80%. The best film was obtained on Si(100) using Si ion extraction grid under 9.0$\times$10-3Torr of working pressure and 11 W/cm2 of the target power density. The electron mobility of the poly-si film grown on Si(100) at 40$0^{\circ}C$ with ion extraction grid shows 96 cm2/V sec. During sputtering, moreover, the characteristics of si source were also analyzed with in situ Langmuir probe method and optical emission spectroscopy.

• ETRI Journal
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• v.30 no.3
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• pp.383-393
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• 2008

The etching mechanism of $ZrO_2$ thin films and etch selectivity over some materials in both $BCl_3$/Ar and $BCl_3/CHF_3$/Ar plasmas are investigated using a combination of experimental and modeling methods. To obtain the data on plasma composition and fluxes of active species, global (0-dimensional) plasma models are developed with Langmuir probe diagnostics data. In $BCl_3$/Ar plasma, changes in gas mixing ratio result in non-linear changes of both densities and fluxes for Cl, $BCl_2$, and ${BCl_2}^+$. In this work, it is shown that the non-monotonic behavior of the $ZrO_2$ etch rate as a function of the $BCl_3$/Ar mixing ratio could be related to the ion-assisted etch mechanism and the ion-flux-limited etch regime. The addition of up to 33% $CHF_3$ to the $BCl_3$-rich $BCl_3$Ar plasma does not influence the $ZrO_2$ etch rate, but it non-monotonically changes the etch rates of both Si and $SiO_2$. The last effect can probably be associated with the corresponding behavior of the F atom density.

• Journal of Sensor Science and Technology
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• v.3 no.2
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• pp.3-10
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• 1994

The use of preformed polymers and their cross-linking has been attempted in order to improve the intrinsic fragility of monolayers and Langmuir-Blodgett(LB) films. The evaluation of the characteristics of the LB multi-layer by using an AT-cut quartz crystal has been also attempted. This study reveals that the polyether pendants of 2C18VE3 lie at the air-water interface at low surface pressures and are forced down into the subphase when the monolayers are compressed. This characteristic behavoir of the pendant polyethers is very clear on aqueous poly allyl amine(PAA) and is also observeable on saturated aqueous NaCl and $CaCl_{2}$. And the characteristics of LB multi-layers could be evaluated by using AT-cut quartz crystal in situ.

• Proceedings of the KIEE Conference
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• 1994.07b
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• pp.1320-1322
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• 1994

Photoisomerization characteristics of 4-octyl-4'-(5-carboxy-pentamethyleneoxy) azobenzene molecules (8A5H) were attained by measurement of absorbtion spectra. 8A5H in chroloform($6.0{\times}10^{-5}[M/l]$) shows trans to cis and cis to trans isomerization by irradiation of lights of 360[nm] and 450[nm] wavelength. From LB monolayer films of 8A5H, also the cis/trans photoisomerization was obtained and it has reversibility and memory characteristics. We are now trying to detect these properties of 8A5H electrically. On this paper, we investigated the structural changes of monolayer on the water surface by measuring the displacement current as a preliminary experiment. The measuring system was constructed at home-made Kuhn type LB(Langmuir-Blodgett) deposition apparatus. 8A5H solution was spreaded at the air-water interface and the currents induced by the dynamic behavior of molecules were measured when the molecules were pressed by barrier. The reversibility of displacement currents by compression and expansion was obtained from 8A5H molecules, which shows the compressed molecules have a tendency to disperse after the compression. From this experiment, we conclude that the behavior of molecules on water surface can be monitored electrically by using this current measuring method, and this method can also be applied to detect the photoisomerization of monolayers on water surface.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.