• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.25 no.5
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• pp.392-397
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• 2012

In the $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1})O_3$ (LCCC), which has been using as interconnector materials in SOFC, Al ions were substituted for Co because ionic radius of Al is similar to that of Co. Because of the almost identical ionic radius of Al and Co, the substitution was not thought to be affect the tolerance factor of LCCC, and the densification behavior, high temperature electrical conductivity and thermal expansion coefficient were examined as a function of Al concentration. In the cases of the x= 0 and x= 0.02 in $(La_{0.8}Ca_{0.2})(Cr_{0.9}Co_{0.1-x}Al_x)O_3$ (x= 0~0.1), the samples showed the relative densities above ${\geq}95%$ when those were sintered at ${\geq}1,350^{\circ}C$. In the case of the $x{\geq}0.06$ the sintered density deteriorated greatly at lower sintering temperatures. High temperature electrical conductivity of the samples decreased as the content of Al increased. Since the valence state of Al ion is unchangeable, while Cr or Co ions contribute to the electrical conduction by changing those valence states, Al substitution resulted in the decreased electrical conductivity. Al doping of LCCC was an effective way of decreasing the thermal expansion coefficient (TEC).

• Journal of the Korean Ceramic Society
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• v.53 no.5
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• pp.494-499
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• 2016

In this work, the effects of different sintering inhibitors added to $La_{0.8}Sr_{0.2}MnO_{3-{\partial}}$ (LSM) were studied to obtain an optimum cathode material for cathode-supported type of Solid oxide fuel cell (SOFC) in terms of phase stability, mechanical strength, electric conductivity and porosity. Four different sintering inhibitors of $Al_2O_3$, $CeO_2$, NiO and gadolinium doped ceria (GDC) were mixed with LSM powder, sintered at $1300^{\circ}C$ and then they were evaluated. The phase stability, sintering behavior, electrical conductivity, mechanical strength and microstructure were evaluated in order to assess the performance of the mixture powder as cathode support material. It has been found that the addition of $Al_2O_3$ undesirably decreased the electrical conductivity of LSM; other sintering inhibitors, however, showed sufficient levels of electrical conductivity. GDC and NiO addition showed a promising increase in mechanical strength of the LSM material, which is one of the basic requirements in cathode-supported designs of fuel cells. However, NiO showed a high reactivity with LSM during high temperature ($1300^{\circ}C$) sintering. So, this study concluded that GDC is a potential candidate for use as a sintering inhibitor for high temperature sintering of cathode materials.

• Proceedings of the KIEE Conference
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• 2005.07c
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• pp.1998-2000
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• 2005

The effects of the addition of nanocrystalline Y2O3 powder on the microstructure and superconducting properties have been investigated in YBCO films prepared by TFA-MOD process. Precursor solution doped with extra $Y_2O_3$ Powder was prepared by adding $Y_2O_3$ powder into a stoichiometic precursor solution with a cation ratio of Y:Ba:Cu=1:2:3. Coating solutions with and without $Y_2O_3$ doping were coated on $LaAlO_3(100)$ single crystal by a dip coating method, cacination and conversion heat treatments were performed at the controlled atmosphere containing water vapor Current carry capacity(Jc) of YBCO film was enhanced about 50% by $Y_2O_3$ doping. It is thought that the enhancement of Jc is due to the better connectivity of YBCO grains and/or the flux pinning by the presence of nanocrystalline $Y_2O_3$ Particles embedded in YBCO grains.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.6 no.2
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• pp.315-322
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• 2002

A thin film oxide semiconductor micro gas sensor array which shows only 60㎽ of power consumption at an operating temperature of 30$0^{\circ}C$ has been fabricated using microfabrication and rnicrornachining techniques. Excellent thermal insulation of the membrane is achieved by the use of a double la! or structure of 0.1${\mu}{\textrm}{m}$ thick Si$_3$N$_4$ and 1${\mu}{\textrm}{m}$ thick phosphosilicate glass(PSG) prepared by low pressure chemical vapor deposition(LPCVD) and atmospheric－pressure chemical-vapor deposition(APCVD), respectively. The sensor way consists of such thin film oxide semiconductor sensing materials as 1wt.％ Pd-doped SnO$_2$, 6wt.% AI$_2$O$_3$-doped ZnO, WO$_3$ and ZnO. The thin film oxide semiconductor micro gas sensor array exhibited resistance changes usable for subsequent data processing upon exposure to various gases and the sensitivity strongly depended on the sensing layer materials. Heater Part of the sensor structure has been modified in order to improve the process yield of the sensor, and as a result of modified heater structure improved process yield has been achieved.

• Proceedings of the Korea Association of Crystal Growth Conference
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• 1996.06a
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• pp.258-292
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• 1996

In the last year great interest appears to YBCO thin films preparation on different substrate materials. Preparation of epitaxial film is a very difficult problem. There are many requirements to substrate materials that must be fullfilled. Main problems are lattice mismatch (misfit) and similarity of structure. From paper [1] or follows that difference in interatomic distances and angles of substrate and film is mire important problem than similarity of structure. In this work we present interatomic distances and angle relations between substrate materials belonging to ABCO4 group (where A-Sr or Ca, B-rare earth element, C-Al or Ga) of different orientations and YBCO thin films. There are many materials used as substrates for HTsC thin films. ABCO4 group of compounds is characterized by small dielectric constants (it is necessary for microwave applications of HTsC films), absence of twins and small misfit [2]. There most interesting compounds CaNdAlO4, SrLaAlO4 and SrLaGaO4 were investigated. All these compounds are of pseudo-perovskite structure with space group 14/mmm. This structure is very similar to structure of YBCO. SLG substrate has the lowest misfit (0.3%) and dielectric constant. For preparation of then films of substrates of this group of compound plane of <100> orientation are mainly used. Good quality films of <001> orientations are obtained [3]. In this case not only a-a misfit play role, but c-3b misfit is very important too. Sometimes, for preparation of thin films substrates of <001> and <110> orientations were manufactured [3]. Different misfits for different YBCO faces have been analyzed. It has been found that the mismatching factor for (100) face is very similar to that for (001) face so there is possibility of preparation of thin films on both orientations. SrLaAlO4(SLA) and SrLaGaO4(SLG) crystals of general formula ABCO4 have been grown by the Czochralski method. The quality of SLA and SLG crystals strongly depends on axial gradient of temperature and growth and rotation rates. High quality crystals were obtained at axial gradient of temperature near crystal-melt interface lower than 50℃/cm, growth rate 1-3 mm/h and the rotation rate changing from 10-20pm[4]. Strong anisotropy in morphology of SLA and SLG single crystals grown by the Czochralski method is clearly visible. On the basics of our considerations for ABCO4 type of the tetragonal crystals there can appear {001}, {101}, and {110} faces for ionic type model [5]. Morphology of these crystals depend on ionic-covalent character of bonding and crystal growth parameters. Point defects are observed in crystals and they are reflected in color changes (colorless, yellow, green). Point defects are detected in directions perpendicular to oxide planes and are connected with instability of oxygen position in lattice. To investigate facets formations crystals were doped with Cr3+, Er3+, Pr3+, Ba2+. Chromium greater size ion which is substituted for Al3+ clearly induces faceting. There appear easy {110} faces and SLA crystals crack even then the amount of Cr is below 0.3at.% SLG single crystals are not so sensitive to the content of chromium ions. It was also found that if {110} face appears at the beginning of growth process the crystal changes its color on the plane {110} but it happens only on the shoulder part. The projection of {110} face has a great amount of oxygen positions which can be easy defected. Pure and doped SLA and SLG crystals measured by EPR in the<110> direction show more intensive lines than in other directions which allows to suggest that the amount of oxygen defects on the {110} plane is higher. In order to find the origin of colors and their relation with the crystal stability, a set of SLA and SLG crystals were investigated using optical spectroscopy. The colored samples exhibit an absorption band stretching from the UV absorption edge of the crystal, from about 240 nm to about 550 m. In the case of colorless sample, the absorption spectrum consists of a relatively weak band in the UV region. The spectral position and intensities of absorption bands of SLA are typical for imperfection similar to color centers which may be created in most of oxide crystals by UV and X-radiation. It is pointed out that crystal growth process of polycomponent oxide crystals by Czochralski method depends on the preparation of melt and its stoichiometry, orientation of seed, gradient of temperature at crystal-melt interface, parameters of growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth (rotation and pulling rate) and control of red-ox atmosphere during seeding and growth. Growth parameters have an influence on the morphology of crystal-melt interface, type and concentration of defects.

• Journal of the Korean Electrochemical Society
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• v.25 no.3
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• pp.105-112
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• 2022

For the commercialization of all-solid-state batteries, it is essential to develop a solid electrolyte that can be operable at room temperature, and it is necessary to manufacture all-solid-state batteries by adopting materials with high ionic conductivity. Therefore, in order to increase the ionic conductivity of the existing oxide-based solid, Li₇La₃Zr₂O₁₂ (LLZO) doped with heterogeneous elements was used as a filler material (Al and Nb-LLZO). An electrolyte with garnet-type inorganic filler doped was prepared. The binary metal element and the polymer mixture of poly(ethylene oxide)/poly(propylene carbonate) (PEO/PPC) (1:1) are uniformly manufactured at a ratio of 1:2.4, The electrochemical performance was tested at room temperature and 60 ℃ to verify room temperature operability of the all-solid-state battery. The prepared composite electrolyte shows improved ionic conductivity derived from co-doping of the binary elements, and the PPC helps to improve the ionic conductivity, thereby increasing the capacity of all-solid-state batteries at room temperature as well as 60 ℃. It was confirmed that the capacity retention rate was improved.