• Journal of IKEEE
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• v.25 no.4
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• pp.735-740
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• 2021

In this paper, we propose a new ESD protection device with high holding voltage with low current gain of parasitic NPN BJT by improving the structure of the existing LTDDSCR. The electrical characteristics of the proposed protection device were analyzed by HBM simulation using Synopsys' TCAD simulation, and the operation of the added BJT was confirmed by current flow, impact ionization and recombination simulation. In addition, the holding voltage characteristics were optimized with the design variables D1 and D2. As a result of the simulation, it was verified that the new ESD protection device has a higher holding voltage compared to the existing LTDDSCR and has a symmetrical bidirectional characteristic. Therefore, the proposed ESD protection device has high area efficiency when applied to an IC and is expected to improve the reliability of the IC.

• Journal of IKEEE
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• v.26 no.1
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• pp.119-123
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• 2022

This paper propose a new ESD protection device suitable for 12V class applications by adding a self-biasing structure to an ESD protection device with high holding voltage due to additional parasitic bipolar BJT. To verify the operating principle and electrical characteristics of the proposed device, current density simulation and HBM simulation were performed using Synopsys' TCAD Simulation, and the operation of the additional self-biasing structure was confirmed. As a result of the simulation, it was confirmed that the proposed ESD protection device has a higher level of holding voltage compared to the existing ESD protection device. It is expected to have high area efficiency due to the dual structure and sufficient latch-up immunity in 12V-class applications.