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Metal-insulator Transition in Low Dimensional $La_{0.75}Sr_{0.25}VO_3$ Thin Films

  • Huynh, Sa Hoang;Dao, Tran M.;Mondal, Partha S.;Takamura, Y.;Arenholz, E.;Lee, Jai-Chan
    • 한국재료학회:학술대회논문집
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    • 한국재료학회 2011년도 추계학술발표대회
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    • pp.19.1-19.1
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    • 2011
  • We report on the metal-insulator transition that occurs as a function of film thickness in ultrathin $La_{0.75}Sr_{0.25}VO_3$ films. The metal-insulator transition displays a critical thickness of 5 unit cell. Above the critical thickness, metallic films exhibit a temperature driven metal-insulator transition with weak localization behavior. With decreasing film thickness, oxygen octahedron rotation in the films increases, causing enhanced electron-electron correlation. The electron-electron correlations in ultrathin films induce the transition from metal to insulator in addition to Anderson localization.

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