• Journal of IKEEE
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• v.16 no.2
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• pp.127-130
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• 2012

In this paper, we reported on a single balanced monolithic diode mixer using Marchand balun for millimeter-wave applications. The single balanced monolithic mixer was fabricated using drain-source-connected pseudomorphic high electron mobility transistor (PHEMT) diodes considering the PHEMT MMIC full process. The average conversion loss is 16 dB in the RF frequency range of 81~86 GHz at LO frequency of 75 GHz with LO power of 10 dBm. The RF-to-LO isolation characteristics are greater than -30 dB and the total chip size is $1.0mm{\times}1.35mm$.

• Journal of Advanced Navigation Technology
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• v.9 no.2
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• pp.103-109
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• 2005

This paper presents the design of a broadband hybrid mixer using dual-gate FET topology with a low-pass filter which improves return loss of output to isolate RF and LO signal. The low-pass filter shows the isolation with RF and LO signal of better than 40 dBc from 1.5 GHz to 5.5 GHz. The dual-gate mixer which has been designed by using cascade topology operates when the lower FET is biased in linear region and the upper FET is in saturation region. The input matching circuit has been designed to have conversion gain from 1.5 GHz to 5.5 GHz. The designed mixer with low-pass filter shows the conversion gain of better than 7 dB from 1.5 GHz to 5.5 GHz at the low LO power level of 0 dBm with the fixed IF frequency of 21.4 MHz.

• JSTS:Journal of Semiconductor Technology and Science
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• v.2 no.1
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• pp.7-18
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• 2002

Single-ended differential RF circuit topologies fully utilizing complementary characteristics of both NMOS and PMOS are proposed, which have inherent advantage of both single-ended and differential circuits. Using this concept, we propose a CCPP (Complementary CMOS parallel push-pull) amplifier which has single-ended input/output with differential amplifying characteristics, leading to more than 30 dB improvement on $IIP_2$. In addition, complementary resistive mixer is also proposed, which provides not only differential IF outputs from single-ended RF input, but much better linearity as well as isolation characteristics. Experimental results using $0.35{\;}\mu\textrm{m}$ CMOS process show that, compared with conventional NMOS resistive mixer, the proposed mixer shows 15 dB better LO-to-IF isolation, 4.6 dB better $IIP_2$, and 4.5 dB better $IIP_3$performances.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.41 no.12
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• pp.103-108
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• 2004

In this paper, we present MIMIC(Millimeter-wave Monolithic Integrated Circuit) up-mixer with low conversion loss and low LO power for the V-band transmitter applications. The up-mixer was successfully integrated by using 0.1 ㎛ GaAs pseudomorphic HEMTs(PHEMTs) and coplanar waveguide (CPW) structures. The circuit is designed to operate at RF frequencies of 60.4 GHz, IF frequencies of 2.4 GHz, and LO frequencies of 58 GHz. The fabricated MIMIC up-mixer size is 2.3 mmxl.6 mm. The measured results show that the low conversion loss of 1.25 dB when input signal is -10.25 dBm at LO power of 5.4 dBm. The LO to RF isolation is 13.2 dB at 58 GHz. The fabricated V-band up-mixer represents lower LO input power and conversion loss characteristics than previous reported millimeter-wave up-mixers.

• The Journal of the Korea Contents Association
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• v.6 no.4
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• pp.1-10
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• 2006

In this paper, a broadband RF module is designed and tested for 2.4GHz band applications. The RF module is composed of a low noise amplifier (LNA) with a three stage amplifier, a single ended gate mixer, matching circuits, a hairpin line band pass filter and a Chebyshev low pass filter to convert the radio frequency (RF) into the intermediate frequency (IF). The LNA has a high gain and stability, and the single ended gate mixer has a high conversion gain and wide dynamic range. In the analysis of the broadband RF module, the composite harmonic balance technique is used to analyze the operating characteristics of an RF module circuit. The RF module has a 55.2dB conversion gain with a 1.54dB low noise figure, $-120{\sim}-60dBm$ wide RF power dynamic range, -60dBm low harmonic spectrum and a good isolation factor among the RF, IF, and local oscillator (LO) ports.

• Journal of IKEEE
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• v.2 no.1 s.2
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• pp.15-23
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• 1998

In this paper, distributed mixer is studied at microwave frequency. The circuit of distributed mixer composed of gate 1,2, drain transmission lines, matching circuits in input and output terminal, DGFET's. For impedance matching of input and output port at higher frequency, image impedance concept is introduced. In distributed mixer, a DGFET's impedances are absorbed by artificial transmission line, this type of mixer can get a very broadband characteristics compared to that of current systems. A RF/LO signal is applied to each gate input port, and are excited the drain transmission line through transcondutance of the DGFET's. The output signals from each drain port of DGFET's added in same phases. We designed and frabricated the distributed mixer, and a conversion gain, noise figure, bandwidth, LO/RF isolation of the mixer are shown through computer simulation and experimentation.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.22 no.5
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• pp.538-544
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• 2011

This paper presents a compact single balanced diode mixer fabricated using a 0.1 ${\mu}M$ GaAs p-HEMT commercial process for an E-band frequency up/down converter. This mixer includes a LO balun employing a Marchand balun with a good RF performance. In order to improve the port-to-port isolation, a high pass filter and a low pass filter are include in this mixer at the RF and IF ports, respectively. The fabricated mixer with a very compact size of 0.58 mm2(0.85 mm${\times}$0.68 mm) exhibits a conversion loss of 8～12 dB and an input P1dB of 1～5 dBm at the LO power of 10 dBm from 71～86 GHz.

• Proceedings of the IEEK Conference
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• 2008.06a
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• pp.411-412
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• 2008

The high performance 94 GHz MMIC(Monolithic Micro-wave Integrated Circuit) single balanced mixer was designed and fabricated, using MHEMT structure based diodes and a CPW(Coplanar Waveguide) tandem coupler. A novel single-balanced structure of diode mixer is proposed in this work, where a 3-dB tandem coupler with two section of parallel-coupled line. Implemented air-bridge crossover structures achieve wide frequency operation and the fabricated mixer exhibits excellent LO-RF isolation, larger than 30 dB, in the 5 GHz bandwidth of 91-96 GHz. A good conversion loss of 7.4 dB is measured at 94 GHz. The proposed MHEMT-based diode mixer shows superior LO-RF isolation and conversion loss to those of the W-band mixers reported to date.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1133-1136
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• 2002

We designed and fabricated a low local oscillation (LO) power V-band CPW mixer module using a CPW-to-waveguide transition technology for the application of millimeter-wave wireless communication systems. The mixer was designed using a unique gate mixing architecture to achieve simultaneously a low LO input power, a high conversion gain, and good LO-RF isolation characteristics. The fabricated mixer exhibited a high conversion gain of 2 dB at a low LO power of 0 dBm. For data transmission of the 60 ㎓ wireless LNA systems, we fabricated a CPW-to-waveguide converter module of WR-15 type and mounted the fabricated mixer in the converter module. The fabricated V-band mixer exhibited a higher conversion gain and a lower LO input power than other reported V-band mixers.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.682-690
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• 2012

In this paper, a highly linear self oscillating mixers(SOM) using second harmonic injections are presented. The H-slot defected ground structure(DGS) is designed as a balanced resonator for oscillation in the proposed SOM. Since the H-slot DGS resonator achieves a high Q factor, it is a suitable structure to provide low phase noise for the oscillator. The single balanced mixer is utilized in this work and it provides good LO-RF isolation since balanced LO signals are suppressed at the RF input port. In order to inject the second harmonic of the IF, we propose two different methods using feedback loops. In the first method, IF achieves a 3.08 dB conversion gain at 226 MHz with input power of -20 dBm at 5 GHz RF input signal. The IF achieves 2 dB conversion gain at 423 MHz with the input power of -20 dBm at 5.2 GHz RF input signal in the second method. The measured IMD3s are 61.8 dB and 65 dB for the each method. These SOMs present improved linearity compared to that without the second harmonic injection because IMD3s are improved by 18. dB and 21 dB for each method.