• Proceedings of the IEEK Conference
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• 2005.11a
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• pp.921-924
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• 2005

We report low conversion loss and high LO to RF isolation 94 GHz MMIC resistive mixers based on 0.1 ${\mu}m$ InGaAs/InAlAs/GaAs metamorphic HEMT technology. The fabricated resistive mixers applied a one-stage amplifier on RF port of the mixer. By using the one-stage amplifier, we obtained the decrement of conversion loss and the increment of LO to RF isolation. So, we can obtain higher performances than conventional resistive mixers. The modified mixer shows excellent conversion loss of 6.7 dB at a LO power of 10 dBm. We also observed an extremely high isolation characteristic from the MMICs exhibiting the LO-RF isolation of 21 ${\pm}$ 0.5dB in a frequency range of 93.7${\sim}$ 94.3 GHz. The low conversion loss and high LO-RF isolation characteristics of the MMIC modified resistive mixers are mainly attributed to the performance of the MHEMTs exhibiting a maximum transconductance of 654 mS/mm, a current gain cut-off frequency of 173 GHz and a maximum oscillation frequency of 271 GHz.

• Journal of electromagnetic engineering and science
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• v.3 no.1
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• pp.1-6
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• 2003

In this paper, a sub-harmonic dual-gate FET mixer is suggested to improve the isolation characteristic between LO and RF ports of an unbalanced mixer. The mixer was designed by using single-gate FET cascode structure and driven by the second harmonic component of LO signal. A dual-gate FET mixer has good isolation characteristic since RF and LO signals are injected into gatel and gate2, respectively. In addition, the isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer due to the large frequency separation between the LO and RF frequencies. As RF power was -30 ㏈m and LO power was 0 ㏈m, the designed mixer yielded the -47.17 ㏈m LO-to-RF leakage power level, 10 ㏈ conversion gain, -2.5 ㏈m OIP3, -12.5 ㏈m IIP3 and -1 ㏈m 1 ㏈ gain compression point. Since the LO-to-RF leakage power level of the designed mixer is as good as that of a double-balanced mixer, the sub-harmonic dual-gate FET mixer can be utilized instead.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.11 no.8
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• pp.1392-1398
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• 2000

In this paper, Sub Harmonic Ring Mixer using Anti-Parallel Diode Pair is studied. Conventional mixers mix LO signal with RF signal and, obtain IF signal from the difference between LO and RF. Sub harmonic ring mixers using APDP mix RF signal with the second harmonic of LO signal, LO frequency needed for conventional receiver is reduced by 1/2.The produced mixer showed 12 dB conversion loss, and 1 dB compression point of IF signal, in respect to RF signal, was found at the 0 dBm RF signal. Isolation LO/IF and LO/RF is 24.6 dB and 22.5 dB respectively. Isolation RF/LO and LO/RF is 32.6 dB and 22.5 dB respectively.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.8 no.2
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• pp.227-231
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• 2004

A MMIC (Monolithic Microwave Integrated Circuit) mixer chip using the schottky diode of InGaAs/CaAs p-HEMT process has been developed for receiver down converter of Ka-band. A different approach of MMIC mixer structure is applied for reducing the chip size by the exchange of ports between IF and LO. This MMIC covers with RF (30.6∼31.0㎓)and IF (20.8∼21.2㎓). According to the on-wafer measurement, the MMIC mixer with miniature size of 3.0mm1.5mm demonstrates conversion loss below 7.8㏈, LO-to-RF isolation above 27㏈, LO-to-IF isolation above 19㏈ and RF-to-IF isolation above 39㏈, respectively.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.43 no.6 s.348
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• pp.46-52
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• 2006

We report on a high performance 94 GHz MMIC resistive mixer using 70-nm metamorphic high electron mobility transistor (MHEMT) and micro-machined W-band ring coupler. A novel 3-dimensional structure of resistive mixer was proposed in this work, and the ring coupler with the surface micro-machined dielectric-supported air-gap microstrip line (DAMLs) structure was used for high LO-RF isolation. The fabricated mixer showed an excellent LO-RF isolation of -29.3 dB and a low conversion loss of 8.9 dB at 94 GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using micro-machined ring coupler has shown superior LO-RF isolation as well as similar conversion loss.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.4 no.3 s.8
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• pp.45-50
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• 2005

In this paper, a broadband single balanced mixer is presented using a wideband rat-race implementation by vertical coupling. Frequency is selected as $1.5{\sim}3$ GHz for RF, $1.64{\sim}3.14$ GHz for LO, and 140 MHz for IF signals. When LO signal with 6 dBm at 2.7 GHz is injected, a conversion loss of 7.5 dB and RF to LO isolation of 30 dB are obtained. Also, an average conversion loss of 10 dB, RF to LO isolation of 30 dB, and LO to IF isolation of 45 dB are obtained for frequency band of $1.5{\sim}3$ GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.29 no.4A
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• pp.415-422
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• 2004

DSRC provides high speed radio link between Road Side Equipment and On-Board Equipment within the narrow communication area. In this paper, a 5.8 GHz down-conversion mixer for DSRC communication system was designed and fabricated using 0.8 ${\mu}{\textrm}{m}$ SiGe HBT process technology and RF/LO matching circuits, RF/LO input balun circuits, and If output balun circuit were all integrated on chip. The chip size of fabricated mixer was 1.9 mm${\times}$1.3 mm and the measured performance was 7.5 ㏈ conversion gain, －2.5 ㏈m input IP3, 46 ㏈ LO to RF isolation, 56 ㏈ LO to IF isolation, current consumption of 21 mA for 3.0 V supply voltage.

• Journal of IKEEE
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• v.3 no.1 s.4
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• pp.69-78
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• 1999

In this paper, direct conversion receiver was designed to even harmonic anti-paralled diode pair ring mixer. Using a second harmonic component of LO instead of LO signal and RF signal are mixed by SHP(Sub Harmonic Pumped) mixer with anti-parallel diode pair. Canceling the harmonics of LO signal in ring mixer, SHP mixer using anti-parallel diode pair could mostly reduce the radiation of LO signal through a input port the most, good isolation characteristic, and low spurious characteristic by LO signal was shown over broad band. The produced SHP mixer showed LO/IF, RF/IF and LO/RF isolation was 24.6dB,36.2dB and 22.5dB respectively. And conversion loss was measured 15.6dB, IF output -35.6dBm with -20dBm RF input and 5.5dBm LO signal. 1dB compression point of If signal, in respect to RF signal, was found at the 0dbm RF signal.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.10 no.1
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• pp.90-98
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• 1999

This paper presents a wideband single-balanced mixer using a diode which can be used in RF receiver of microwave measurement systems. For wideband characteristic, local oscillator(LO) signal is provided to diode with low loss using a coplanar waveguide-to-slotline balun. For high isolation characteristic radio frequency (RF) port and intermediate frequency (IF) port are designed using directional coupler. This mixer presents 30.5~31.17dB conversion loss whose flatness is within 1dB for 9 kHz~2.6 GHz wideband RF signal, and above 30 dB isolation for LO signal.