• Title/Summary/Keyword: LNO

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Growth of Mn,Ce:$LiTaO_3$ and two-color holographic recording (Mn,Ce:$LiTaO_3$의 성장과 이색을 이용한 홀로그램 저장특성)

  • ;Van-Thai Pham
    • Proceedings of the Optical Society of Korea Conference
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    • 2002.07a
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    • pp.96-97
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    • 2002
  • 불순물을 이용한 비휘발성 홀로그램저장[1,2]은 기존의 열정착을 광정착으로 대치하는 방법으로서 여러 가지 희토류 혹은 전이금속이온을 첨가한 LiMbO$_3$ (LNO) 단결정 재료에서 시도되고 있다. 대표적인 재료로서 Mn,Fe:LNO 가 있으나 Mn,Ce:LNO, Cu,Co:LNO, Tb,Fe:LNO 등도 연구되고 있고 Stoichiometric LNO 경우엔 Pr:LNO, Er:LNO, Tb:LNO 등이 연구되고 있다. 그 외에 Mn:YAlO$_3$도 약하긴 하지만 비휘발성이 최근 보고되었다. (중략)

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Effects of (100) Orientation of LaNiO3 on the Growth and Ferroelectric Properties of Pb(Zr,Ti)O3 Thin Films (LaNiO3의 (100)배향성이 Pb(Zr,Ti)O3 박막의 결정성장과 강유전성에 미치는 영향)

  • Park, Min-Seok;Seo, Byung-Joon;Yoo, Young-Bae;Moon, Byung-Kee;Son, Se-Mo;Chung, Su-Tae
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.18 no.4
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    • pp.338-343
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    • 2005
  • Pb(Zr,Ti)O₃[PZT] thin films were prepared on a highly (100) oriented LaNiO₃[LNO] and a randomly oriented LNO by sol-gel process. The PZT thin films on a highly (100) oriented LNO show a high (100) crystal orientation (F=100 %), those on a randomly oriented LNO show a random crystal orientation (F=60 %). All the PZT layer have a flat and dense microstructure with large columnar grains and their grain size are 25 nm. In the ferroelectric curves at electric field of 40 kV/cm, a highly (100) oriented PZT/LNO samples show coercive field, E/sub c/=10 kV/cm and remanent polarization, P/sub r/=14.5 μC/㎠, while a randomly oriented PZT/LNO sample show E/sub c/=10 kV/cm and P/sub r/=5.4 μC/㎠.

(100) orientation of PZT thin films coated on the LNO electrode using a different manufacturing process (제조 공정을 달리한 LNO 전극에 코팅된 PZT 박막의 배향성)

  • Seo, Byung-Jun;Moon, Byung-Kee;Kim, Kang-Eon;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.916-919
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    • 2004
  • This paper studied about the (100) orientation of PZT thin films coated on the LNO electrode using a different thermal annealing. The thermal annealing method is divided into two things. The one is the method transferring heat to only the lower substrate and another is transferring heat to all directions. Orientation factor of PZT in the method of transferring heat to only the lower substrate was F=99% in the thermal annealing of the LNO. Orientation factor of PZT was F=67% in the method of transferring heat to all directions.

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In Situ Spectroscopy in Condensed Matter Physics

  • Noh, Tae Won
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.92-92
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    • 2014
  • Recently, many state-of-art spectroscopy techniques are used to unravel the mysteries of condensed matters. And numerous heterostructures have provided a new avenue to search for new emergent phenomena. Especially, near the interface, various forms of symmetry-breaking can appear, which induces many novel phenomena. Although these intriguing phenomena can be emerged at the interface, by using conventional measurement techniques, the experimental investigations have been limited due to the buried nature of interface. One of the ways to overcome this limitation is in situ investigation of the layer-by-layer evolution of the electronic structure with increasing of the thickness. Namely, with very thin layer, we can measure the electronic structure strongly affected by the interface effect, but with thick layer, the bulk property becomes strong. Angle-resolved photoemission spectroscopy (ARPES) is powerful tool to directly obtain electronic structure, and it is very surface sensitive. Thus, the layer-by-layer evolution of the electronic structure in oxide heterostructure can be investigated by using in situ ARPES. LaNiO3 (LNO) heterostructures have recently attracted much attention due to theoretical predictions for many intriguing quantum phenomena. The theories suggest that, by tuning external parameters such as misfit strain and dimensionality in LNO heterostructure, the latent orders, which is absent in bulk, including charge disproportionation, spin-density-wave order and Mott insulator, could be emerged in LNO heterostructure. Here, we performed in situ ARPES studies on LNO films with varying the misfit strain and thickness. (1) By using LaAlO3 (-1.3%), NdGaO3 (+0.3%), and SrTiO3 (+1.7%) substrates, we could obtain LNO films under compressive strain, nearly strain-free, and tensile strain, respectively. As strain state changes from compressive to tensile, the Ni eg bands are rearranged and cross the Fermi level, which induces a change of Fermi surface (FS) topology. Additionally, two different FS superstructures are observed depending on strain states, which are attributed to signatures of latent charge and spin orderings in LNO films. (2) We also deposited LNO ultrathin films under tensile strain with thickness between 1 and 10 unit-cells. We found that the Fermi surface nesting effect becomes strong in two-dimensions and significantly enhances spin-density-wave order. The further details are discussed more in presentation. This work was collaborated with Hyang Keun Yoo, Seung Ill Hyun, Eli Rotenberg, Ji Hoon Shim, Young Jun Chang and Hyeong-Do Kim.

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Optically transparent ultrasound transducers for combined ultrasound and photoacoustic imaging: A review (초음파-광음향 융합 영상을 위한 투명 초음파 변환기)

  • Shunghun Park;Jin Ho Chang
    • The Journal of the Acoustical Society of Korea
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    • v.42 no.5
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    • pp.441-451
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    • 2023
  • Ultrasound transducers are an essential component of combined photoacoustic and ultrasound imaging systems and play an important role in image evaluation. However, ultrasound transducers are opaque; therefore, light must bypass the ultrasound transducer to reach the target point to produce a photoacoustic image. Providing different paths for the optical and acoustic signals results in a complicated system design, increasing the system volume. To overcome these problems, an optically Transparent Ultrasound Transducer (TUT) was developed. Unlike conventional opaque ultrasound transducers, optically TUT can be fabricated by a variety of manufacturing methods and they are suitable for use with specific piezoelectric elements and serve various purposes. In this study, a comparative analysis of the results of using Lithium Niobate (LNO), Lead Magnesium Niobate-Lead Titanate (PMN-PT), and Polyvinylidene Difluoride (PVDF), which are materials used in piezoelectric element-based TUT. LNO is a piezoelectric element widely used in TUT, and PMN-PT has been actively studied recently with a higher transmission and reception rate than LNO. Existing TUT have lower ultrasound resolution than photoacoustic resolution, but they have recently been manufacturing focused TUT with high ultrasound resolution using PVDF. A comparative analysis of the production results of these TUT was performed.

Effect of $LaNiO_3$ electrodes on Structural and Ferroelectric Proerties of $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ Thin films ($Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ 박막의 구조 및 강유전 특성에 미치는 $LaNiO_3$전극의 영향)

  • Kim, K.T.;Kim, C.I.;Lee, C.I.;Kim, T.A.
    • Proceedings of the KIEE Conference
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    • 2004.11a
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    • pp.75-78
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    • 2004
  • $Bi_{3.25}Eu_{0.75}Ti_3O_{12}$ (BET) thin films were deposited on the $LaNiO_3$ (LNO (100))/Si and Pt/Ti/$SiO_2$/Si substrates by the metal-organic decomposition method. Structural and dielectric properties of BLT thin films for the applications in nonvolatile ferroelectric random access memories were investigated. Both the structure and morphology of the films were analyzed by x-ray diffraction (XRD) and atomic force microscope (AFM). Even at low temperatures $650^{\circ}C$, the BET thinfilms were successfully deposited on LNO bottom electrode and exhibited (001) and (117) orientation. Compared with the Pt electrode films, the BET thin films on the LNO electrode annealed at $650^{\circ}C$ showed better dielectric constantsand remanent polarization. The BET thin films on the LNO electrode for the annealing temperature of $650^{\circ}C$, the remanent polarization Pr and coercive field were $45.6\;C/cm^2$ and 171 kV/cm, respectively.

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Electrical properties of PZT films on Pt and $LaNiO_3$ electrode by using sol-gel method (Pt와 $LaNiO_3$ 전극에 대한 PZT(53/47) sol-gel 막의 전기적 특성)

  • Seo, Byung-Jun;Yeo, Ki-Ho;Ryu, Ji-Goo;Kim, Kang-Eon;Chung, Su-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.641-643
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    • 2003
  • The ferroelectric properties of PZT(53/47) thin film was investigated by methoxy enthanol solution based on sol-gel method. The thickness of each layer by spincoating 0.25M sol at one time was $0.1{\mu}m$ and crack-free film was formed. $LaNiO_3/Si(100)$ electrode and $Pt/Ti/SiO_2/Si(100)$ electrode was coated by PZT sol at several times. PZT orientation was confirmed as a method of XRD and coercive field(Ec) as well as remnant polarization(Pr) was investigated from hysterisis curve. As a result of XRD analysis, we can know that the orientation of on PZT/LNO/Si(100) is better than on $Pt/Ti/SiO_2/Si(100)$. The remnant polarization(Pr) in LNO electrode was $87.5{\mu}C/cm^2$ and $39.8{\mu}C/cm^2$ in Pt. From this figures, it is investigated that the Pr in LNO electrode was better than in Pt.

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Dielectric and Structural properties of highly oriented $PST/LaNiO_3$ Thin Films for Microwave application (초고주파 응용을 위한 (100) 방향으로 성장된 PST / $LaNiO_3$박막의 구조적, 유전적 특성)

  • Eom, Joon-Chul;Lee, Sung-Gap;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2004.07b
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    • pp.648-651
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    • 2004
  • Pb0.5Sr0.5TiO3(PST) thin films were deposited on the LaNiO3 (LNO(100))/Si and Pt/Ti/SiO2/Si substrates by the alkoxide-based sol-gel method. Structural and dielectric properties of PST thin films for the tunable microwave device applications were investigated. The PST films, which were directly grown on the Pt/Ti/SiO2/Si substrates showed the random orientation. For the LNO/Si substrates, the PST thin films exhibited highly (100) orientation. Compared with randomly oriented films, the highly (100)-oriented PST thin films showed better dielectric constant, tunability, and figure of merit (FOM). The dielectric constant, tunability, and FOM of the highly (100)-oriented PST thin film increased with increasing annealing temperature due to the decrease in lattice distortion. The differences in dielectric properties may be attributed to the change in the film stress and the in-plane oriented Polar axis depending on the substrate was used. The dielectric constants, dielectric loss and tunability of the PST thin films deposited on the LNO/Si substrates measured at 1 MHz were 483, 0.002, and 60.1%, respectively.

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Recoverty of Lithium Carbonate and Nickel from Cathode Active Material LNO(Li2NiO2) of Precursor Process Byproducts (전구체 공정부산물 LNO(Li2NiO2)계 양극활물질로부터 탄산리튬 및 니켈 회수연구)

  • Pyo, Je-Jung;Wang, Jei-Pil
    • Resources Recycling
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    • v.28 no.4
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    • pp.30-36
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    • 2019
  • In this study, Li powder was recovered from the by-product of LNO ($Li_2NiO_2$) process, which is the positive electrode active material of waste lithium ion battery, through the $CO_2$ thermal reaction process. In the process of recovering Li powder, the $CO_2$ injection amount is 300 cc/min. The $Li_2NiO_2$ award was phase-separated into the $Li_2CO_3$ phase and the NiO phase by holding at $600^{\circ}C$ for 1 min. After this, the collected sample:distilled water = 1:50 weight ratio, and after leaching, the solution was subjected to vacuum filtration to recover $Li_2CO_3$ from the solution, and the NiO powder was recovered. In order to increase the purity of Ni, it was maintained in $H_2$ atmosphere for 3 hours to reduce NiO to Ni. Through the above-mentioned steps, the purity of Li was 2290 ppm and the recovery was 92.74% from the solution, and Ni was finally produced 90.1% purity, 92.6% recovery.

Chemical Solution Deposition of PZT/Oxide Electrode Thin Film Capacitors and Their Micro-patterning by using SAM

  • Suzuki, Hisao
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.907-912
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    • 2005
  • Micro-patterns of $Pb(Zr_{0.53}Ti_{0.47})O_3$, PZT, thin films with a MPB composition were deposited on $Pt/Ti/SiO_2/Si$ substrate from molecular-designed PZT precursor solution by using self-assembledmonolayer(SAM) as a template. This method includes deposition of SAM followed by the optical etching by exposing the SAM to the UV-light, leading to the patterned SAM as a selective deposition template. The pattern of SAM was formed by irradiating UV-light to the SAM on a substrate and/or patterned PZT thin film through a metal mask for the selective deposition of patterned PZT or lanthanum nickel oxide (LNO) precursor films from alkoxide-based precursor solutions. As a result, patterned ferroelectric PZT and PZT/LNO thin film capacitors with good electrical properties in micrometer size could be successfully deposited.

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