• Proceedings of the Polymer Society of Korea Conference
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• 2006.10a
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• pp.25-26
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• 2006

Azobenzene functionalized polymers have been extensively investigated due to the potential applications in the areas of optical switching, optical elements, optical information storage, and nonlinear optics. These applications are mainly achievable due to photoinduced properties of azobenzene groups with photoisomerization and photoinduced anisotropy. We report applications to the optoelectronic devices using inscribed one-(1D) and two-dimensional (2D) SRGs on azo polymer films. The inscribed holographic SRGs patterns were useful to control or enhance optoelectronic properties such as transparent electrode patterning, hybrid solar cell and ultraviolet GaN-based LED.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.22 no.1
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• pp.11-14
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• 2012

The AlGaN layer has direct wide bandgaps ranging from 3.4 to 6.2 eV. Nowadays, it is becoming more important to fabricate optical devices in an UV region for the many applications. The high quality AlGaN layer is necessary to establish the UV optical devices. However, the growth of AlGaN layer on GaN layer is difficult due to the lattice mismatch and difference thermal expansion coefficient between GaN layer and AlGaN layer. In this paper, we attempted to grow the LED structure on GaN template by mixed-source HVPE method with multi-sliding boat system. We tried to find the optical and lattice transition of active layer by control the Al content in mixed-source. For the growth of epi layer, the HCl and $NH_3$ gas were flowed over the mixed-source and the carrier gas was $N_2$. The temperature of source zone and growth zone was stabled at 900 and $1090^{\circ}C$, respectively. After the growth, we performed the x-ray diffraction (XRD) and electro luminescence (EL) measurement.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.116-126
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• 2009

It is becoming more difficult to improve the device operating speed by shrinking the size of semiconductor devices. Therefore, for a new leap forward in the semiconductor industry, the advent of silicon opto-electronic devices, i.e., silicon photonics is more desperate. Silicon Avalanche LED is one of the prospective candidates to realize the practical silicon opto-electronic devices due to its simplicity of fabrication, repeatability, stability, high speed operation, and compatibility with silicon IC processing. We conducted the measurement of the electrical characteristics and the observation of the light-emitting phenomena using optical microscopy. We analyzed the influence of the design elements such as the shape of the light-emitting area and the depth of the $n^{+}-p^{+}$ junction with simple device modeling and simulation. We compared the results of simulation and the measurement and explained the discrepancy between the results of the simulation and the measurement, and the suggestions for the improvement were given.

• Korean Journal of Optics and Photonics
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• v.18 no.2
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• pp.155-161
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• 2007

A new and simple method of 3-dimensional circuit modeling and analysis is proposed and verified experimentally for the first time by determining 3-dimensional current flow and 2-dimensional light distribution in blue InGaN/GaN multi-quantum well (MQW) light emitting diode (LED) devices. Circuit parameters of the LED consist of the resistance of the metallic film and epitaxial layer, and the intrinsic diode which represents the active region emitting the light. The circuit parameters are extracted from the transmission line model (TLM) and current-voltage relation. We applied the >> proposed method and extracted circuit parameters to obtain the light emission pattern in a top-surface emitting-type LED. The current spreading effect is analyzed theoretically and quantitatively with a variation of the resistance of metallic and epitaxial layers. The emitting-light distribution of the fabricated blue LED showed a good agreement with the analyzed result, which shows the dark emission intensity at the corner of the p-electrode.

• Journal of Korean Society of Industrial and Systems Engineering
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• v.46 no.3
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• pp.59-68
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• 2023

Currently, yellow phosphor of Y3Al5O12:Ce3+ (YAG:Ce) fluorescent material is applied to a 450~480nm blue LED light source to implement a white LED device and it has a simple structure, can obtain sufficient luminance, and is economical. However, in this method, in terms of spectrum analysis, it is difficult to mass-produce white LEDs having the same color coordinates due to color separation cause by the wide wavelength gap between blue and yellow band. There is a disadvantage that it is difficult to control optical properties such as color stability and color rendering. In addition, this method does not emit purple light in the range of 380 to 420nm, so it is white without purple color that can not implement the spectrum of the entire visible light spectrum as like sunlight. Because of this, it is difficult to implement a color rendering index(CRI) of 90 or higher, and natural light characteristics such as sunlight can not be expected. For this, need for a method of implementing sunlight with one LED by using a method of combining phosphors with one light source, rather than a method of combining red, blue, and yellow LEDs. Using this method, the characteristics of an artificial sunlight LED device with a spectrum similar to that of sunlight were demonstrated by implementing LED devices of various color temperatures with high color rendering by injecting phosphors into a 405nm deep blue LED light source. In order to find the spectrum closest to sunlight, different combinations of phosphors were repeatedly fabricated and tested. In addition, reliability and mass productivity were verified through temperature and humidity tests and ink penetration tests.

• Journal of the Korean Crystal Growth and Crystal Technology
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• v.34 no.5
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• pp.163-172
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• 2024

White light-emitting diodes (W-LEDs) are widely used in displays and lighting due to their advantages of compact size, high efficiency, and long lifespan compared to traditional light sources. Glass-ceramics produced by inducing crystallization in amorphous glass through heating, finds applications in various high-performance fields. Its properties can be tailored through the addition of nucleating agents or phase separation phenomena. By forming nanometer-sized crystals, glass-ceramics can retain its characteristics while maintaining transparency in the visible range, making it suitable for a range of applications including optical switches, optical converters, lasers, medical devices, and sensors. Additionally, glass-ceramics containing rare earth elements, transition metals, quantum dots, and nanocrystals can convert blue or ultraviolet light into visible light, thereby enhancing the performance of W-LEDs. This paper explores the optical properties of glass-ceramics derived from oxide and fluoride glasses, its potential applications in W-LEDs, and recent research trends.

• Korean Journal of Materials Research
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• v.21 no.1
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• pp.46-49
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• 2011

Bi co-doped ZnS:Mn,Bi yellow phosphors for white light emitting diodes were prepared by the conventional solidstate reaction method. The optical and structural properties of ZnS:Mn,Bi phosphors were investigated by x-ray diffraction, scanning electro microscopy and photoluminescence. ZnS:Mn,Bi phosphors showed XRD patterns of hexagonal structure. The photoluminescence of ZnS:Mn,Bi phosphors showed spectra extending from 480 to 700 nm, peaking at 580 nm. The photoluminescence of 580 nm in the ZnS:Mn,Bi phosphors was associated with the 4T1 ${\rightarrow}$ 6A1 transition of the Mn2+ ions. The highest photoluminescent intensity of the phosphors under 405 nm and 450 nm excitation was obtained at Bi concentration of 7mol%. The optimum mixing conditions with epoxy and yellow phosphor for white light emitting diodes were observed in a ratio of epoxy:yellow phosphor of 1:3.5. The CIE chromaticity of the white LED at the 1:3.5 ratio was X = 0.3454 and Y = 0.2449.

• Journal of Broadcast Engineering
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• v.20 no.6
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• pp.928-937
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• 2015

A portable head up display (HUD) using the optical combiner lens with a 0.47inch LCD panel for a portable multi-windows virtual display is proposed. The proposed system consists of several micro panels, optical devices, and RGB 3in1 light-emitting diodes (LED) for making the full color display, and video and audio format for the high definition multimedia interface (HDMI) for the connecting between HUD and mobile phone. The multi-windows HUD is designed as an alternative to conventional built-in type HUD targeting the mass volume aftermarket at an affordable price.

• The Journal of The Korea Institute of Intelligent Transport Systems
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• v.17 no.5
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• pp.143-150
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• 2018

With the rapid development of RF based high speed wireless communication technology, devices that can be applied to IoT networks based on RF bandwidth are rapidly spreading, nevertheless, the development speed of the RF communication is not possible to keep up with the spread of the RF band for wireless communication. In this situation, OWC technology that uses visible light source as a transmitter is attracting attention as a technology that can overcome the band exhaustion problem of RF based wireless communication technology. Although, due to the distortion of the LED illumination shape by camera exposure time and LED blinking period, the LED illumination detection rate is degraded and the RoI setting is inaccurate. In this paper, we propose an adaptive median filter applied LED illumination detection algorithm for low rate CamCom, it is possible to detect a clear RoI and LED illumination. This research will be able to play a role as a complementary material of RF based wireless communication technology efficiently.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.18 no.2
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• pp.401-407
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• 2014

There are increasing interests in COB (Chip On Board) that densely arranged many LED chips on one board in order to solve the heat issue. There are many problems being on the rise: the lifespan decreases as the temperature of LED devices increases; Red Shift phenomenon, in which wave length of spectral line moves from original wave length to long wave length, occurs; and optical power decreases as $T_j$ increases. In order to resolve such problems, this study selected the optimum thickness and length of Fin, planned the second Heat sink that is optimum for COB LED with 15W, and analyzed thermal mode by Solid Works Flow Simulation through 15W COB packaging with the planned Heat sink. 15W COB down-light Heat sink that is produced based on this analysis was utilized to analyze thermal mode through contact thermometer and electrical properties through Kelthley 2430.