• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.51-51
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• 2010

Group III-nitride semiconductors have been widely studied as the materials for growth of light emitting devices. Currently, GaN devices are predominantly grown in the (0001) c-plane orientation. However, in case of using polar substrate, an important physical problem of nitride semiconductors with the wurtzite crystal structure is their spontaneous electrical polarization. An alternative method of reducing polarization effects is to grow on non-polar planes or semi-polar planes. However, non-polar and semipolar GaN grown onto r-plane and m-plane sapphire, respectively, basically have numerous defects density compared with c-plane GaN. The purpose of our work is to reduce these defects in non-polar and semi-polar GaN and to fabricate high efficiency LED on non/semi-polar substrate. Non-polar and semi-polar GaN layers were grown onto patterned sapphire substrates (PSS) and nano-porous GaN/sapphire substrates, respectively. Using PSS with the hemispherical patterns, we could achieve high luminous intensity. In case of semi-polar GaN, photo-enhanced electrochemical etching (PEC) was applied to make porous GaN substrates, and semi-polar GaN was grown onto nano-porous substrates. Our results showed the improvement of device characteristics as well as micro-structural and optical properties of non-polar and semi-polar GaN. Patterning and nano-porous etching technologies will be promising for the fabrication of high efficiency non-polar and semi-polar InGaN LED on sapphire substrate.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.34 no.4
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• pp.221-228
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• 2021

With the advent of the IoT (internet of things) era, there has been discussion on how to efficiently use various information from daily life. In academic and industrial society, various smart devices such as smart watches, smart phones, and smart glasses have been developed and commercialized for narrowing the physical/psychological distance with user information. According to recent developments of smart devices, the contemporary people have desired to check their body information and treat disease by themselves. According to the needs of the time, biological researches by phototherapy/monitoring have been actively conducted. Among various light sources, microLEDs have been spotlighted due to their superior optoelectric properties and stability. In this paper, we would like to review the state-of-the research results on the next-generation biological therapy devices via microLEDs.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.17 no.2
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• pp.666-671
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• 2016

This paper introduces a device providing close local lighting to the affected part, where the operation-purpose astral lamp alone cannot shed light directly, in an operation room of hospitals or clinics, which helps clinical doctors perform safe treatment of the affected part deep inside a human body. This medical assisting lighting is a device necessary to prevent fatal operation failures, which can occur with minute operation processes, such as tumor removal or angiorrhaphy. The components, such as the light source and power supply were designed to be low power consuming and small in size, have a narrow angle lens was used to increase the light spreading effect and focused illumination. The end-caps of the light transmission device using an optical cable and the lighting device were designed in the waterproof type to enable disinfection of these devices after use for the next patients. According to the measurement of the light source properties made after development of the retractor lighting device, the illumination intensity was 490 lux, the brightness was $11,550cd/m^2$, general color rendering index was 78, color temperature was 11,000K, and the intensity distribution was even, which were confirmed to be adequate for medical assisting local lighting.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.37 no.5
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• pp.554-561
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• 2024

Micro light-emitting diodes (µLEDs) have been utilized in various fields such as displays, and smart devices, due to their superior stabilities. Since the applications of the µLEDs have been extended to medical devices and wearable sensors, excellent optical properties and uniformity of the µLEDs are important. Hence, several researchers have investigated to enhance the optical efficiency of the µLEDs through micro/nano lens. However, the reported methods for realizing the micro/nano lens have some drawbacks such as complex and high-cost manufacturing processes. Herein, we developed µLEDs with 3D-printed hydrogel microlenses. The printed hydrogel had high transparency and excellent adhesive strength, allowing it to attach onto top surface of the µLEDs without any additional adhesives. Microscale printing technology using a 3D printer achieved quick and fine printing in desired shapes and arrangements, showing the possibility of mass production. The 3D-printed microlens can be applied to improve not only the optical properties of µLEDs but also other optical devices.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.02a
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• pp.124-124
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• 2010

Much interest has been focused on InGaN-based materials and their quantum structures due to their optoelectronics applications such as light emitting diode (LED) and photovoltaic devices, because of its high thermal conductivity, high optical efficiency, and direct wide band gap, in spite of their high density of threading dislocations. Build-in internal field-induced quantum-confined Stark effect in InGaN/GaN quantum well LED structures results in a spatial separation of electrons and holes, which leads to a reduction of radiative recombination rate. Therefore, many growth techniques have been developed by utilizing lateral over-growth mode or by inserting additional layers such as patterned layer and superlattices for reducing threading dislocations and internal fields. In this work, we investigated various characteristics of InGaN multiple quantum wells (MQWs) LED structures grown on selectively wet-etched porous (SWEP) GaN template layer and compared with those grown on non-porous GaN template layer over c-plane sapphire substrates. From the surface morphology measured by atomic force microscope, high resolution X-ray diffraction analysis, low temperature photoluminescence (PL) and PL excitation measurements, good structural and optical properties were observed on both LED structures. However, InGaN MQWs LED structures grown on SWEP GaN template layer show relatively low In composition, thin well width, and blue shift of PL spectra on MQW emission. These results were explained by rough surface of template layer, reduction of residual compressive stress, and less piezoelectric field on MQWs by utilizing SWEP GaN template layer. Better electrical properties were also observed for InGaN MQWs on SWEP GaN template layer, specially at reverse operating condition for I-V measurements.

• Applied Science and Convergence Technology
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• v.25 no.1
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• pp.1-6
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• 2016

Quantum dots (QDs) are considered as excellent color conversion and self-emitting materials for display and lighting applications. In this article, various technologies which can be used to realize white light emission with QDs are discussed. QDs have good color purity with a narrow emission spectrum and tunable optical properties with size control capabilities. For white light emission with a color-conversion approach, QDs are combined with blue-emitting inorganic and organic light-emitting diodes (LED) to generate white emission with high energy conversion efficiency and a high color rendering index for various display and lighting applications. Various device structures for self-emitting white QD light-emitting diodes (QD-LED) are also reviewed. Various stacking and patterning technologies are discussed in relation to QD-LED devices.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.11a
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• pp.24-24
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• 2003

Research activity in the III-V nitrides materials system has increased markedly in the past several years ever since high-brightness blue light-emitting diodes (LEDs) became commercially available. Despite of excellent optical properties of the GaN, however, inherently poor thermal property of the sapphire used as a substrate material n these devices may lead to thermal degradation of devices, especially during their high power operation. Therefore, dependable thermal analysis and packaging schemes of GaN-based LEDs are necessary for solid lighting applications under high power operation. In this paper, emphasis will be placed upon thermal design of GaN-based LEDs. Thermal measurements of LEDs on chip and packaging scale were performed using the liquid crystal thermographic technology and micro thermocouples for different bias conditions. By a series of optical arrangement, hot spots with specific transition temperatures were obtained with increasing input power. Thermal design of LEDS was made using the finite element method and analytical unit temperature profile approach with optimal boundary conditions. The experimental results were compared to the simulated data and the results agree well enough for the establishment of dependable prediction of thermal behavior in these devices. The paper will present a more detailed understanding of the thermal analysis of the GaN-based blue and white LEDs for high power applications.

• Proceedings of the Materials Research Society of Korea Conference
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• 2011.05a
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• pp.20.2-20.2
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• 2011

III-nitrides have attracted much attention for optoelectronic device applications whose emission wavelengths ranging from green to ultraviolet due to their wide band gap. However, due to the strong polarization properties of conventional c-plane III-nitrides, the built-in polarization-induced electric field limits the performance of optical devices. Therefore, there has been a renewed interest in the growth of nonpolar III-nitride semiconductors for polarization free heterostructure optoelectronic and electronic devices. However, the crystal and the optical quality of nonpolar/semipolar GaN have been poorer than those of conventional c-plane GaN, resulting in the relative poor optical and electrical properties of light emitting diodes (LEDs). In this presentation, I will discuss the growth and characterization of high quality nonpolar a-plane and semipolar (11-22) GaN and InGaN multiple quantum wells (MQWs) grown on r- and m-plane sapphire substrates, respectively, by using metalorganic chemical vapor deposition (MOCVD) without a low temperature GaN buffer layer. Especially, the epitaxial lateral overgrowth (ELO) technique will be also discussed to reduce the dislocation density and enhance the performance of nonpolar and semipolar GaN-based LEDs.

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2012.10a
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• pp.13-14
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• 2012

Than fluorescent lamps or light bulbs, long life, small power consumption and to the development of modern technology, LED (Light Emitting Diode) devices have the advantage of easy control. For these reasons, using the LED device, lighting has been widely used. LED using optical fiber technology using LED lighting technology with the development of wireless communication technology is attracting attention again. Using LED lights this study analyzed the performance of the technology transfer and implementation of the information transmission system of the visible light communication using LED lighting of the White Visible Light Communication (VLC) based PC module transmitter and receiver modules. Has made a system that can transmit information more than the value of the initial distance ~ 50cm, depending on the presence or absence of the lens, in order to increase the efficiency of the LED modules with different efficiencies that could confirm the performance of the implementation of the research, analysis, and application methods. and about the possibility that you want to check.

• Electronics and Telecommunications Trends
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• v.34 no.2
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• pp.10-18
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• 2019

Since the introduction of CRT(Cathode Ray Tube) in the 1950s, display technologies have been developed continuously. Flat panel displays such as PDP(Plasma Display Panel) and LCD(Liquid Crystal Display) were commercialized in the late 1990s, and OLED(Organic Light Emitting Diodes) and Micro-LED(Micro-Light Emitting Diodes) are now being developed and are becoming widespread. In the future, we expect to develop ultra-realistic, flexible, embedded sensor displays. Ultra-realistic display can be applied to AR/VR(Augmented Reality/Virtual Reality) devices and spatial light modulators for holography. The sensor-embedded display can be applied to robots; electronic skin; and security devices, including iris recognition sensors, fingerprint recognition sensors, and tactile sensors. AR/VR technology must be developed to meet technical requirements such as viewing angle, resolution, and refresh rate. Holography requires optical modulation technology that can significantly improve resolution, viewing angle, and modulation method to enable wide-view and high-quality hologram stereoscopic images. For electronic skin, stable mass production technology, large-area arrays, and system integration technologies should be developed.