• Tribology and Lubricants
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• v.38 no.3
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• pp.93-100
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• 2022

Micro-light emitting diode (micro-LED) displays offer numerous advantages such as high brightness, fast response, and low power consumption. Hence, they are spotlighted as the next-generation display. However, defective LEDs may be created due to non-uniform contact loads or LED alignment errors. Therefore, a repair process involving the replacement of defective LEDs with favorable ones is necessitated. The general repair process involves the removal of defective micro-LEDs, interconnection material transfer, as well as new micro-LED transfer and bonding. However, micro-LEDs are difficult to repair since their size decreases to a few tens of micron in width and less than 10 ㎛ in thickness. The conventional nozzle-type dispenser for fluxes and the conventional vacuum chuck for LEDs are not applicable to the micro-LED repair process. In this study, transfer conditions are determined using a micro stamp for repairing micro-LEDs. Results show that the aging time should be set to within 60 min, based on measuring the aging time of the flux. Additionally, the micro-LEDs are subjected to a compression test, and the result shows that they should be transferred under 18.4 MPa. Finally, the I-V curves of micro-LEDs processed by the laser and hot plate reflows are measured to compare the electrical properties of the micro-LEDs based on the reflow methods. It was confirmed that the micro-LEDs processed by the laser reflow show similar electrical performance with that processed by the hot plate reflow. The results can provide guidance for the repair of micro-LEDs using micro stamps.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.35 no.5
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• pp.467-472
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• 2011

The heat transfer over a radial heat sink, adapted for LED (light emitting diode) downlights, was experimentally and analytically investigated. We added radiation heat transfer into a previous calculation that neglected this factor. The numerical results agreed well with experimental results. Parametric studies were performed to compare the effects of the geometric parameters (fin length, fin height, ideal number of fins) and the operating parameter (heat flux) on the average heat-sink temperature from the heat-sink array. We found the fin length that maximizes the heattransfer performance. As the emissivity increased, the effect of geometric parameters on the radiation heat transfer decreased.

• KIEAE Journal
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• v.17 no.1
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• pp.43-48
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• 2017

Purpose: Building owners or residents have concerns to strive for energy-saving and environmental conservation by utilizing with eco-friendlier energy resources for their physical environment. In this paper, an algae façade system is proposed as an energy-friendly building component to improve energy productivity and indoor environmental quality, and this study aims at verifying alternative technologies for implementing building elevations that contain various colors equipped with algae façade systems and suggesting design guidelines to enhance both building performance and design values. Method: The color of algae is basically ranged about the saturation green, and it is hardly converted to other variations. Such a problem can be resolved through the artificial lights like LED (Light Emitting Diode) lamps to mix the color from the algae and buildings could possibly change the elevation in many ways under the influence of daylight. Result: As a result, the suggested system may increase the aesthetic aspect of the building in response to environmental changes. The system cannot possibly be applied for only new construction, but also it can be utilized with the existing buildings as well. The proposed system is expected to be applied not only a new construction and any existing buildings as well, and it will cover from the environmentally friendly energy generation in the industry to a new application system for increasing energy efficiency and the beauty of building envelopes.

• Transactions on Electrical and Electronic Materials
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• v.3 no.4
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• pp.21-26
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• 2002

Color correction methods of chromaticity coordinates using Color Matching Function (CMF) were studied to develop a device-independent portable-type urine analyzer. The reflection spectra were measured for the degrees of 10 test items of the urine reagent strip (urine strip) to develop a portable-type urine analyzer. A computer simulation was performed to quantitatively distinguish the color reactions of the urine system, by using the spectral power distribution of Light Emitting Diode(LED), the reflection of a urine strip, and spectral sensitivity of a photodiode. To develop a device-independent system, chromaticity coordinates were modified to reduce the color deviations in the urine strip, by using the temperature compensation of LED and the color transformation by CMF. The experimental values obtained by developed urine system exhibited the accuracy above 95% for all color samples.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.63-66
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• 2003

To diffuse Zn at solid-state, the $SiO-2$/ZnO/$SiO_2$ wafers was made by PECVD and RF Sputter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about 500 ${\AA}$ and about 3500 ${\AA}$. Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.08a
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• pp.59-62
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• 2003

Our Zn diffusion into n-type $GaAs_{0.60}P_{0.40}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about 625~650 nm and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.

• Journal of the Semiconductor & Display Technology
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• v.11 no.1
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• pp.13-19
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• 2012

Thermal performance of an impinging cooling module for 150 W class high power LEDs have been investigated numerically and experimentally. Parametric studies were performed to compare the effect of several design parameters such as nozzle number, nozzle spacing, coolant flow rate, and impinging distance. The experiments were also carried out in order to validate the numerical results and the comparison between the experimental and numerical results showed good agreement. It is found that the overall thermal resistance of impinging cooling module strongly depends on the nozzle number, nozzle spacing, flow rate, and impinging distance. This results showed the optimized operating condition when number of nozzles is 25, nozzles spacing is 4mm, flow rate is 2.70 lpm, distance between nozzles and impinging surface is 2 mm.

• Journal of the Korean Society for Precision Engineering
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• v.31 no.5
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• pp.417-422
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• 2014

A guitar pickup is a transducer that converts string vibration to an electrical signal. The magnetic and piezo pickups are the most commonly used for the respective electric and electroacoustic guitars. The magnetic pickups are prone to magnetic interference between the steel strings and permanent magnets, while the piezo ones are not free from signal inference between the strings. Thus, this paper presents the development of an optical pickup for the electroacoustic guitar. The proposed optical pickup has the top-to-bottom structure. It uses two of Infrared (IR) Light Emitting Diode (LED) and one photodetector. The developed optical pickup is subjected to the evaluation with commonly used piezoelectric pickup. It becomes obvious that SNR with the optical pickup is increased by 45 percent in average, compared with the piezoelectric pickup. It can be concluded that the developed optical pickup has a potential to be applied to the acoustic guitar.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.481-485
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• 2003

To diffuse Zn at solid-state, the $SiO_2/ZnO/SiO_2$ wafers was made by PECVD and RF Spotter. Thicknesses of bottom $SiO_2$ and cap $SiO_2$ was about $500{\AA}$ and about $3500{\AA}$. First test was Diffusion temperatures were $760^{\circ}C$, $780^{\circ}C$, and $800^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr and 2nd test was Diffusion temperatures were $760^{\circ}C$, $720^{\circ}C$, and $680^{\circ}C$, and diffusion times were 1, 2, 3, 4, 5, and 6 hr. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color Main reason for Iv change was by diffusion temperature not diffusion time. The lower temperature was the higher Iv. We thick that these properties is because of the very high diffusion temperature.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.11a
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• pp.510-513
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• 2003

Our Zn diffusion into n-type $GaAs_{0.40}P_{0.60}$ used ampoule-tube method to increase IV. N-type epitaxial wafers were preferred by $H_2SO_4$-based pre-treatment. $SiO_2$ thin film was deposited by PECVD for some wafers. Diffusion times and diffusion temperatures respectability are 1, 2, 3 hr and 775, $805^{\circ}C$. LED chips were fabricated by the diffused wafers at Fab. The peak wavelength of all chips showed about $625{\sim}650\;nm$ and red color. The highest IV is about 270 mcd at the diffusion condition of $775^{\circ}C$, 3h for the wafers which didn't deposit $SiO_2$ thin films. Also, the longer diffusion time is the higher IV for the wafers which deposit $SiO_2$ thin films.