• Korean Journal of Materials Research
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• v.20 no.12
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• pp.676-680
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• 2010

Most TCOs such as ITO, AZO(Al-doped ZnO), FTO(F-doped $SnO_2$) etc., which have been widely used in LCD, touch panel, solar cell, and organic LEDs etc. as transparent electrode material reveal n-type conductivity. But in order to realize transparent circuit, transparent p-n junction, and introduction of transparent p-type materials are prerequisite. Additional prerequisite condition is optical transparency in visible spectral region. Oxide based materials usually have a wide optical bandgap more than ~3.0 eV. In this study, single-phase transparent semiconductor of $SrCu_2O_2$, which shows p-type conductivity, have been synthesized by 2-step solid state reaction at $950^{\circ}C$ under $N_2$ atmosphere, and single-phase $SrCu_2O_2$ thin films of p-type TCOs have been deposited by RF magnetron sputtering on alkali-free glass substrate from single-phase target at $500^{\circ}C$, 1% $H_2$/(Ar + $H_2$) atmosphere. 3% $H_2$/(Ar + $H_2$) resulted in formation of second phases. Hall measurements confirmed the p-type nature of the fabricated $SrCu_2O_2$ thin films. The electrical conductivity, mobility of carrier and carrier density $5.27{\times}10^{-2}S/cm$, $2.2cm^2$/Vs, $1.53{\times}10^{17}/cm^3$ a room temperature, respectively. Transmittance and optical band-gap of the $SrCu_2O_2$ thin films revealed 62% at 550 nm and 3.28 eV. The electrical and optical properties of the obtained $SrCu_2O_2$ thin films deposited by RF magnetron sputtering were compared with those deposited by PLD and e-beam.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.13 no.7
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• pp.1393-1398
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• 2009

Conventionally, etching is first considered for microelectronics fabrication process and is specially important in process of a-Si:H thin film transistor for LCD. In this paper, we stabilize properties of device by development of wet and dry etching process. The a-Si:H TFTs of this paper is inverted staggered type. The gate electrode is lower part. The gate electrode is formed by patterning with length of 8 ${\mu}$m${\sim}$16 ${\mu}$m and width of 80${\sim}$200 ${\mu}$m after depositing with gate electrode (Cr) 1500 ${\AA}$under coming 7059 glass substrate. We have fabricated a-SiN:H, conductor, etch-stopper and photo resistor on gate electrode in sequence, respectively. The thickness of these thin films is formed with a-SiN:H (2000 ${\mu}$m), a-Si:H(2000 ${\mu}$m) and n+a-Si:H (500 ${\mu}$m), We have deposited n-a-Si:H, NPR(Negative Photo Resister) layer after forming pattern of Cr gate electrode by etch-stopper pattern. The NPR layer by inverting pattern of upper gate electrode is patterned and the n+a-Si:H layer is etched by the NPR pattern. The NPR layer is removed. After Cr layer is deposited and patterned, the source-drain electrode is formed. In the fabricated TFT, the most frequent problems are over and under etching in etching process. We were able to improve properties of device by strict criterion on wet, dry etching and cleaning process.

• Polymer(Korea)
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• v.31 no.2
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• pp.148-152
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• 2007

The prototype of color fitters for the liquid crystal displays (LCD) using cholesteric liquid crystal monomers was produced. Cholesteric liquid crystal is characterized by the unique optical features of selective reflection, which is due to the helical twisting structures of LCs comparable to the wavelength of the incident light under certain conditions of substrate treatment. In the results of the experiment, cholesteric films for red, green, and blue light reflections respectively were produced and the viewing angle dependence of these films were investigated. Reflective light of red and green films shifted to shorter wavelength regions as viewing angle becomes greater, but blue one shifted very little. Periodic micrometer-sized half-spherical photoresist formed by thermal reflow method after photo-lithography was patterned on glass substrates. The viewing angle dependence of reflective light colors of red, green, and blue films on the patterned substrates compared with those on no patterned substrates was investigated. We could confirm the dependences were much smaller on the patterned substrates by bare eyes and Lab-color coordination methods qualitatively.

• Journal of Radiation Protection and Research
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• v.40 no.4
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• pp.194-201
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• 2015

We have investigated the EPR signal properties in 12 components of two mobile phones (LCD, OLED) using electron paramagnetic resonance (EPR) spectrometer in this study.EPR measurements were performed at normal atmospheric conditions using Bruker EXEXSYS-II E500 spectrometer with X-band bridge, and samples were irradiated by $^{137}Cs$ gamma-ray source. To identify the presence of radiation-induced signal (RIS), the EPR spectra of each sample were measured unirradiated and irradiated at 50 Gy. Then, dose-response curve and signal intensity variating by time after irradiation were measured. As a result, the signal intensity increased after irradiation in all samples except the USIM plastic and IC chip. Among the samples, cover glass(CG), lens, light guide plate(LGP) and diffusion sheet have shown fine linearity ($R^2$ > 0.99). Especially, the LGP had ideal characteristics for dosimetry because there were no signal in 0 Gy and high rate of increase in RIS. However, this sample showed weakness in fading. Signal intensity of LGP and Diffusion Sheet decreased by 50% within 72 hours after irradiation, while signals of Cover Glass and Lens were stably preserved during the short period of time. In order to apply rapidly EPR dosimetry using mobile phone components in large-scale radiation accidents, further studies on signal differences for same components of the different mobile phone, fading, pretreatment of samples and processing of background signal are needed. However, it will be possible to do dosimetry by dose-additive method or comparative method using unirradiated same product in small-scale accident.