• Proceedings of the Materials Research Society of Korea Conference
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• 2010.05a
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• pp.19.2-19.2
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• 2010

Printed electronics using printing process has broadened in all respects such as electrics (lighting, batteries, solar cells etc) as well as electronics (OLED, LCD, E-paper, transistor etc). Copper is considered to be a promising alternative to silver for printed electronics, due to very high conductivity at a low price. However, Copper is easily oxidized, and its oxide is non-conductive. This is the highest hurdle for making copper inks, since the heat and humidity that occurs during ink making and printing simply accelerates the oxidation process. A variety of chemical treatments including organic capping agents and metallic coating have been used to slow this oxidation. We have established synthetic conditions of copper nanoparticles (CuNPs) which are resistant to oxidation and average diameter of 20 to 50nm. Specific resistivity should be less than $4\;{\mu}{\Omega}{\cdot}cm$ when sintered at lower temperature than $250^{\circ}C$ to be able to apply to conductive patterns of FPCBs using ink-jet printing. Through this study, the parameters to control average diameter of CuNPs were found to be the introduction of additive agent, the feeding rate of reducing agent, and reaction temperature. The CuNPs with various average diameters (58, 40, 26, 20nm) could be synthesized by controlling these parameters. The dispersed solution of CuNPs with an average size of 20 nm was made with nonpolar solvent containing 3 wt% of binder, and then coated onto glass substrate. After sintering the coated substrates at $250^{\circ}C$ for 30 minutes in nitrogen atmosphere, metallic copper film resulted in a specific resistivity of $4.2\;{\mu}{\Omega}{\cdot}cm$.

• Proceedings of the Korean Vacuum Society Conference
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• 2010.08a
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• pp.167-167
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• 2010

Indium tin oxide (ITO) has been widely used as transparent conductive oxides (TCOs) for transparent electrodes of various optoelectronic devices, such as liquid crystal displays (LCD) and organic light emitting diodes (OLED). However, indium has become increasingly expensive and rare because of its limited resources. In addition, ITO thin films have some problems for OLED and flexible displays, such as imperfect work function, chemical instability, and high deposition temperature. Therefore, multi-component TCO materials have been reported as anode materials. Among the various materials, IZTO thin films have been gained much attention as anode materials due to their high work function, good conductivity, high transparency and low deposition temperature. IZTO thin films with a thickness of 200nm were deposited on Corning glass substrate at different substrate temperature by pulsed DC magnetron sputtering with a sintered ceramic target of IZTO (In2O3 70 wt%, ZnO 15 wt%, SnO2 15 wt%). We investigated the electrical, optical, structural properties of IZTO thin films. As the substrate temperature is increased, the electrical properties of IZTO are improved. All IZTO thin films have good optical properties, which showed an average of transmittance over 80%. These IZTO thin films were used to fabricate organic light emitting diodes (OLEDs) as anode and the device performances studied. As a result, IZTO has utility value of TCO electrode although it reduced indium and we expect it is possible for the IZTO to apply to flexible display due to the low processing temperature.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.28-35
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• 2010

In the display industry, COG bonding method is being applied to production of LCD panels that are used for mobile phones and monitors, and is one of the mounting methods optimized to compete with the trend of ultra small, ultra thin and low cost of display. In COG bonding process, electrical characteristics such as contact resistance, insulation property, etc and mechanical characteristics such as bonding strength, etc depend on properties of conductive particles and epoxy resin along with ACF materials used for COG by manufacturers. As the properties of such materials have close relation to optimization of bonding conditions such as temperature, pressure, time, etc in COG bonding process, it is requested to carry out an in-depth study on characteristics of COG bonding, based on which development of bonding process equipment shall be processed. In this study were analyzed the characteristics of COG bonding process, performed the analysis and reliability evaluation on electrical and mechanical characteristics of COG bonding using ACF to find optimum bonding conditions for ACF, and performed the experiment on bonding characteristics regarding fine pitch to understand the affection on finer pitch in COG bonding. It was found that it is difficult to find optimum conditions because it is more difficult to perform alignment as the pitch becomes finer, but only if alignment has been made, it becomes similar to optimum conditions in general COG bonding regardless of pitch intervals.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.459-459
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• 2012

Recently, the discharge of global warming gases in dry etching process of TFT-LCD display industry is a serious issue because perfluorocarbon compound (PFC) gas causes global warming effects. PFCs including CF4, C2F6, C3F8, CHF3, NF3 and SF6 are widely used as etching and cleaning gases. In particular, the SF6 gas is chemically stable compounds. However, these gases have large global warming potential (GWP100 = 24,900) and lifetime (3,200). In this work, we chose C3F6O gas which has a very low GWP (GWP100 = <100) and lifetime (< 1) as a replacement gas. This study investigated the effects of the gas flow ratio of C3F6O/O2 and process pressure in dual-frequency capacitively coupled plasma (CCP) etcher on global warming effects. Also, we compared global warming effects of C3F6O gas with those of SF6 gas during dry etching of a patterned positive type photo-resist/silicon nitride/glass substrate. The etch rate measurements and emission of by-products were analyzed by scanning electron Microscopy (SEM; HITACI, S-3500H) and Fourier transform infrared spectroscopy (FT-IR; MIDAC, I2000), respectively. Calculation of MMTCE (million metric ton carbon equivalents) based on the emitted by-products were performed during etching by controlling various process parameters. The evaluation procedure and results will be discussed in detail.

• Journal of the Semiconductor & Display Technology
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• v.12 no.2
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• pp.79-84
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• 2013

Nanoimprint lithography (NIL) is the next generation photolithography process in which the photoresist is dispensed onto the substrate in its liquid form and then imprinted and cured into a desired pattern instead of using traditional optical system. There have been considerable attentions on NIL due to its potential abilities that enable cost-effective and high-throughput nanofabrication to the display device and semiconductor industry. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper, with the rolling type imprinting process, a mold, placed upon the $2^{nd}$ generation TFT-LCD glass sized substrate($370{\times}470mm^2$), is rolled by a rubber roller to achieve a uniform residual layer. The prediction of residual layer thickness of the photoresist by rolling of the rubber roller is crucial to design the rolling type imprinting process, determine the rubber roller operation conditions-mpressing force & feeding speed, operate smoothly the following etching process, and so forth. First, using the elasticity theory of contact problem and the empirical equation of rubber hardness, the contact length between rubber roller and mold is calculated with consideration of the shape and hardness of rubber roller and the pressing force to rubber roller. Next, using the squeeze flow theory to photoresist flow, the residual layer thickness of the photoresist is calculated with information of the viscosity and initial layer thickness of photoresist, the shape of mold pattern, feeding speed of rubber roller, and the contact length between rubber roller and mold previously calculated. Last, the effects of rubber roller operation conditions, impressing force & feeding speed, on the residual layer thickness are analyzed with consideration of the shape and hardness of rubber roller.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.11a
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• pp.398-398
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• 2007

The Liquid Crystal (LC) alignment uniformity is very important in LC devices. The alignment mechanism of LC molecules on a rubbed polyimide (PI) surface is very important for both LC fundamental research and application. So, Generally a rubbing method to align LC has been widely used to mass-produce LCD panels. But because rubbing method is contact method between rubbing fabric and indium-tin-oxide glass or flexible substrate, rubbing method has some defects, such as the electrode charges and the creation of contaminating particles. Thus we strongly recommend a non-contact alignment technique for getting rid of some defects of rubbing method. Most recently, the LC aligning capabilities achieved by ion-beam exposure on the organic and nonorganic thin film surface have been reported successfully. In this research, we studied the tilt angle generation and electro-optical performances for a NLC on homeotropic polyimide surfaces with ion-beam exposure. The LC aligning capabilities of a nematic liquid crystal (NLC) on a homeotropic PI surface using a new ion-beam method were studied. On the homeotropic PI surface, the tilt angle of the NLC by exposure ion-beam had a tendency to decrease as increased ion-beam energy density. And, on the homeotropic PI surface, the alignment character of the NLC with respect to ion-beam energy was good. And we achieved satisfactory result for EO character.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.06a
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• pp.105-105
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• 2006

IT 산업 및 반도체 산업이 발전함에 따라 초소형, 고집적화 시스템의 요구에 대응하기 위해서 고해상도 및 고정밀의 패턴 구현에 관한 많은 연구가 진행되고 있다. 이러한 연구는 각종 산업제품의 PCB(Printed Circuit Board) 및 디스플레이 장치인 PDP(Plasma Display Panel), LCD(Liquid Crystal Display) 등에 적용되어 널리 응용되고 있다. 현재 널리 사용되는 인쇄 회로 기판은 마스킹 후 선택적 에칭 방식을 적용하여 금속 배선을 형성하는 방식을 적용하고 있다. 이러한 방식은 설계가 변경될 경우 마스크를 다시 제작해야 하는 번거로움이 있어 설계 변경이 용이하지 않고 더욱 길어진 생산시간의 증가로 인하여 생산성 및 집적도가 떨어지게 된다. 따라서 최근에는 이러한 한계를 극복하기 위한 방안이 여러 가지 측면에서 시도되고 있으며, 그 중에서도 Inkjet Printing 기술에 대한 관심이 증가하고 있다. 본 연구에서는 Inkjet Printing 방식을 적용하여 금속 배선을 형성하고 선폭과 두께의 오차를 줄여 배선의 Tolerance 를 개선할 수 있는 방안을 제안하였다. Inkjet Printing 방식을 이용한 기존의 금속 배선 형성은 고해상도의 DPI(Dot Per Inch)에서 잉크 액적이 뭉치는 Bulge 현상이 발생되어 원하는 형상 및 배선의 폭을 구현하는데 어려움이 있었다. Bulge 현상은 배선의 불균일성을 야기할 뿐만 아니라 근접한 배선의 간섭에도 영향을 미처 금속 배선의 기능을 할 수 없는 단점을 발생시킨다. 따라서 본 연구에서는 이러한 Bulge 현상을 줄이고 배선간의 간섭을 방지하여 원하는 배선을 용이하게 형성할 수 있는 순차적 인쇄 방식을 적용하였다. 본 연구에서는 노즐직경 35um 의 Inkjet Head 와 나노 Ag 입자 잉크를 사용하여 Glass 표면 위에 배선을 형성하고 배선의 폭과 두께를 측정하였다. 또한 순차적 인쇄 방식을 적용하여 700DPI 이상의 고해상도에서 나타날 수 있는 Bulge 현상이 감소하였음을 관찰하였으며 금속 배선의 Tolerance를 10%내외로 유지할 수 있음을 확인하였다.

• The Journal of Engineering Geology
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• v.33 no.4
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• pp.543-553
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• 2023

The current status of domestic a agalmatolite mines in South Korea was investigated with a view to establishing a stable supply of agalmatolite and managing its demand. Most mined agalmatolite deposits were formed through hydrothermal alteration of Mesozoic volcanic rocks. The physical characteristics of pyrophyllite, the main constituent mineral of agalmatolite, are as follows: specific gravity 2.65~2.90, hardness 1~2, density 1.60~1.80 g/cm³, refractoriness ≥29, and color white, gray, grayish white, grayish green, yellow, or yellowish green. Among the chemical components of domestic agalmatolite, SiO₂ and Al₂O₃ contents are respectively 58.2~67.2 and 23.1~28.8 wt.% for pyrophyllite, 49.2~72.6 and 16.5~31.0 wt.% for pyrophyllite + dickite, 45.1 and 23.3 wt.% for pyrophyllite + illite, 43.1~82.3 and 11.4~35.8 wt.% for illite, and 37.6~69.0 and 19.6~35.3 wt.% for dickite. Domestic agalmatolite mines are concentrated mainly in the southwest and southeast of the Korean Peninsula, with some occurring in the northeast. Twenty-one mines currently produce agalmatolite in South Korea, with reserves in the order of Jeonnam (45.6%) > Chungbuk (30.8%) > Gyeongnam (13.0%) > Gangwon (4.8%), and Gyeongbuk (4.8%). The top 10 agalmatolite-producing mines are in the order of the Central Resources Mine (37.9%) > Wando Mine (25.6%) > Naju Ceramic Mine (13.4%) > Cheongseok-Sajiwon Mine (5.4%) > Gyeongju Mine (5.0%) > Baekam Mine (5.0%) > Minkyung-Nohwado Mine (3.3%) > Bugok Mine (2.3%) > Jinhae Pylphin Mine (2.2%) > Bohae Mine. Agalmatolite has low thermal conductivity, thermal expansion, thermal deformation, and expansion coefficients, low bulk density, high heat and corrosion resistance, and high sterilization and insecticidal efficiency. Accordingly, it is used in fields such as refractory, ceramic, cement additive, sterilization, and insecticide manufacturing and in filling materials. Its scope of use is expanding to high-tech industries, such as water treatment ceramic membranes, diesel exhaust gas-reduction ceramic filters, glass fibers, and LCD panels.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.214.1-214.1
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• 2015

Thin-film transistors (TFTs)의 채널층으로 널리 쓰이는 indium-gallium-zinc oxide (IGZO)는 높은 전자 이동도(약 10 cm2/Vs)를 나타내며 유기 발광 다이오드디스플레이(OLED)와 대면적 액정 디스플레이(LCD)에 필수적으로 사용되고 있다. 하지만, 이러한 재료는 우수한 TFT의 채널층의 특성을 가지는 반면, ZnO 기반 재료이기 때문에 소자 구동에서의 안정성은 가장 큰 문제로 남아있다. 따라서 최근, IGZO layer의 특성을 향상시키기 위한 연구가 다양한 방법으로 시도되고 있다. IGZO의 조성비를 조절하여 전기적 특성을 최적화거나 IGZO layer의 조성 중 Ga을 다른 금속 메탈로 대체하는 연구도 이루어지고 있다. 그러나 IGZO에 미량의 도펀트를 첨가하여 박막 특성 변화를 관찰한 연구는 거의 진행되지 않고 있다. 산화물 TFTs의 전기적 특성과 안정성은 산소 함량에 영향을 많이 받는 것으로 알려져 있으며, 더욱이 TFT 채널층으로 쓰이는 IGZO 박막의 고유한 산소 공공은 디바이스 작동 중 열적으로 활성화 되어 이온화 상태가 될 때 소자의 안정성을 저하시키는 것이 문제점으로 지적되고 있다. 그러므로 본 연구에서는 낮은 전기 음성도(1.22)와 표준전극전위(-2.372 V)를 가지며 산소와의 높은 본드 엔탈피 값(719.6 kJ/mol)을 가짐으로써 산소 공공생성을 억제할 것으로 기대되는 yttrium을 IGZO의 도펀트로 도입하였다. 따라서 본 연구에서는 Y-IGZO의 박막 특성 변화를 관찰하고자 한다. 본 연구에서는 magnetron co-sputtering법으로 IGZO 타깃(DC)과 Y2O3 타깃(RF)를 이용하여 기판 가열 없이 동시 방전을 이용해 non-alkali glass 기판 위에 증착 하였다. IGZO 타깃은 DC power 110 W으로 고정하였으며 Y2O3 타깃에는 RF Power를 50 W에서 110 W까지 증가시키면서 Y 도핑량을 조절하였다. Working pressure는 고 순도 Ar을 20 sccm 주입하여 0.7 Pa로 고정하였다. 모든 실험은 $50{\times}50mm$ 기판 위에 총 두께 $50nm{\pm}2$ 박막을 증착 하였으며, 그 함량에 따른 전기적 특성 및 광학적 특성을 살펴보았다. 또한, IGZO 박막 제조 시 박막의 안정화를 위해 열처리과정은 필수적이다. 하지만 본 연구에서는 열처리를 진행하지 않고 Y-IGZO의 안정성 개선 여부를 보기 위하여 20일 동안 상온에서 방치하여 그 전기적 특성변화를 관찰하였다. 나아가 Y-IGZO 채널 층을 갖는 TFT 소자를 제조하여 소자 구동 특성을 관찰 하였다. Y2O3 타깃에 가해지는 RF Power가 70 W 일 때 Y-IGZO박막은 IGZO박막과 비교하여 상대적으로 캐리어 밀도는 낮은 반면 이동도는 높은 최적 특성을 얻을 수 있었다. 상온방치 결과 Y-IGZO박막은 IGZO박막에 비해 전기적 특성 변화 폭이 적었으며 이것은 Y 도펀트에 의한 안정성 개선의 결과로 예상된다. 투과도는 Y 도핑에 의하여 약 1.6 % 정도 상승하였으며 밴드 갭 내에서 결함 준위로 작용하는 산소공공의 억제로 인한 결과로 판단된다.

• Journal of the Korean Ceramic Society
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• v.39 no.3
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• pp.226-232
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• 2002

We searched thermal stability of ${\alpha}-Fe_2O_3$ using red color filter for display. In the PDP(Plasma Display Panel), the color filter layer is lied normally between front glass and transparent dielectric materials, so it might be needed to study the reaction of ${\alpha}-Fe_2O_3$ and transparent dielectric materials. The transparent dielectric materials containing ZnO has good transparency. Red colorlayer of ${\alpha}-Fe_2O_3$ contacted with dielectric material layer containing ZnO is changed to colorlessness over 500$^{\circ}$C because ZnO defuse ${\alpha}-Fe_2O_3$, the dielectric materials without ZnO, however, maintain red color at the same condition. We suggest that a layer contacting with ${\alpha}-Fe_2O_3$ red color layer has to lie with transparent dielectric materials without ZnO, then the materials containing ZnO is coated over to get color of ${\alpha}-Fe_2O_3$ for red color filter