• Title/Summary/Keyword: LCD Glass

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Technology Trend of Sputtering Type FCCL for Display Material (Display 소재용 Sputtering Type FCCL의 기술 동향)

  • Lee, Man-Hyeong;Ryu, Han-Gwon;Kim, Yeong-Tae
    • Proceedings of the Korean Institute of Surface Engineering Conference
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    • 2015.11a
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    • pp.33-42
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    • 2015
  • 오늘날 연성회로기판(FCCL : Flexible Copper Clad Laminate)은 디스플레이, 스마트폰, 자동차, 항공, 의료 기기, 산업용 컨트롤 기기 등 거의 모든 고급 전자 제품들에 사용되고 있다. 특히 디스플레이 분야에서는 뛰어난 연성과 내구성을 바탕으로 경박단소화에 유리할 뿐만 아니라 구동부에 적용이 가능한 장점 등으로 그 적용처가 점점 늘어나고 있는 추세이다. 이 가운데서도 LCD와 OLED의 구동소자(Display Driver IC)를 장착하는 COF(Chip on Film)는 대표적인 연성회로기판(FCCL) 적용 부품으로서, 최근 인기를 끌고 있는 디스플레이의 제로-베젤(Zero-bezel)을 가능케 하는 핵심 부품이다. COF용 연성회로기판(FCCL) 소재로는 우수한 평탄도, 파인피치(Fine-pitch)구현성, 내굴곡성, 광투과성 등을 보유하고 있는 Sputtering Type FCCL이 사용되고 있다. 특히 최근 Display 분야의 화두가 되고 있는 POLED(Plastic-OLED) 패널을 장착한 Flexible Mobile 디스플레이의 경우, 기존의 COG(Chip on Glass) 접합방식이 아닌 COF 접합방식을 채택하고 있으며, 기존의 단면 COF보다 3배의 고해상도 구현이 가능한 양면 COF를 채택하기에 이르렀다. 기존의 COF 제작공정과 달리 Semi Additive 공정으로 제작되는 양면 COF 시장의 태동으로 양면 연성회로기판(FCCL)의 수요 증가가 예상되는 등 최근 디스플레이 기술 발전은 소재 분야에도 큰 변화를 잉태하고 있다. 이러한 최근 디스플레이 업계의 고해상도, 고속 신호 전송, 슬림화, Flexible 추세에 대응 가능한 최적의 특성을 보유하고 있는 Sputtering Type FCCL을 중심으로 디스플레이의 발전에 대응하는 소재의 기술 개발 동향을 살펴보고자 한다.

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The Arrangement Process Optimization of Vacuum Glazing Pillar using the Design of Experiments (실험계획법을 이용한 진공유리 Pillar의 배치공정 최적화)

  • Kim, Jae Kyung;Jeon, Euy Seik
    • Journal of the Semiconductor & Display Technology
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    • v.11 no.1
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    • pp.73-78
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    • 2012
  • In this study, the optimal process condition was induced about the pillar arrangement process of applying the screen printing method in the manufacture process of vacuum glazing panel. The high precision screen printing is technology which pushes out the paste and spreads it by using the squeegee on the stainless steel plate in which the pattern is formed. The screen printing method is much used in the flat panel display field including the LCD, PDP, FED, organic EL, and etc for forming the high precision micro-pattern. Also a number of studies of screen printing method have been conducted as the method for the cost down through the improvement of productivity. The screen printing method has many parameters. So we used Taguchi method in order to decrease test frequencies and optimize this parameters efficiently. In this study, experiments of pillar arrangement were performed by using Taguchi experimental design. We analyzed experimental results and obtained optimal conditions which are 4 m/s of squeegee speed, $40^{\circ}$ of squeegee angle and distance between metal mask and glass.

Soft Mold Deformation of Large-area UV Impring Process (대면적 UV 임프린팅 공정에서 유연 몰드의 변형)

  • Kim, Nam-Woong;Kim, Kug-Weon
    • Journal of the Semiconductor & Display Technology
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    • v.10 no.4
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    • pp.53-59
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    • 2011
  • Recently there have been considerable attentions on nanoimprint lithography (NIL) by the display device and semiconductor industry due to its potential abilities that enable cost-effective and high-throughput nanofabrication. Although one of the current major research trends of NIL is large-area patterning, the technical difficulties to keep the uniformity of the residual layer become severer as the imprinting area increases more and more. In this paper we focused on the deformation of the $2^{nd}$ generation TFT-LCD sized ($370{\times}470mm^2$) large-area soft mold in the UV imprinting process. A mold was fabricated with PDMS(Poly-dimethyl Siloxane) layered glass back plate(t0.5). Besides, the mold includes large surrounding wall type protrusions of 1.9 mm width and the via-hole(7 ${\mu}m$ diameter) patterend area. The large surrounding wall type protrusions cause the proximity effect which severely degrades the uniformity of residual layer in the via-hole patterend area. Therefore the deformation of the mold was calculated by finite element analysis to assess the effect of large surrounding wall type protrusions and the flexiblity of the mold. The deformation of soft mold was verified by the measurements qualitatively.

Low Temperature Deposition of ITO Thin Films for Flat Panel Displays by ICP Assisted DC Magnetron Sputtering (유도결합 플라즈마(ICP) Sputtering에 의한 평판 디스플레이(FPD)용 ITO 박막의 저온 증착)

  • 구범모;정승재;한영훈;이정중;주정훈
    • Journal of the Korean institute of surface engineering
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    • v.37 no.3
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    • pp.146-151
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    • 2004
  • Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was >85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

Preparation of p-type transparent semiconductor $SrCu_2O_2$ thin film by RF magnetron sputtering (RF 마그네트론 스퍼터링에 의한 p형 투명 반도체 $SrCu_2O_2$ 박막의 제조)

  • Kim, Sei-Ki;Seok, Hye-Won;Lee, Mi-Jae;Choi, Byung-Hyun;Jeong, Won-Hee
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.47-47
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    • 2008
  • P-type transparent semiconductor $SrCu_2O_2$ thin films have been prepared by RF sputtering using low-alkali glass for LCD and quartz as substrates. Single phase of $SrCu_2O_2$ powder was obtained by heating a stoichiometric mixture of CuO and $SrCO_3$ at 1223K for 96h under N2 gas flow, and target was fabricated at 1243K for 24h. Room temperature conductivity of the sintered body was about 0.02S/cm, and the activation energy in the temperature range of $-50^{\circ}C$~RT and RT~$150^{\circ}C$ were 0.18eV, 0.07eV, respectively. Effects of deposition pressure and post-annealing temperature on the electrical and optical properties of the obtained thin film have been investigated.

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EL Devices for LCD Backlight Based on ZnS:Cu Phosphor (혼합파우더 및 절연박막층을 이용한 PELD의 광학특성)

  • 박수길;조성렬;전세호;엄재석;이주성
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1998.06a
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    • pp.391-394
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    • 1998
  • Electroluminescence is the light emission obtained by an electrical excitation energy passing through a phosphor under an applied high electrical field. EL are paid much attention on flat panel display as a backlight and indicator, which are divided into ACPRL(alternating-current powder electroluminescent) and ACTFEL(alternating-current powder electroluminescent). In this paper, Electric and emission properties on ACPEL are investigated based on ZnS:Cu phosphor. The basic structure on this is ITO glass/phosphor/insulator/ backelectrode, CR-M which has high efficiency on thermal properties and dielectric Properties was introduced and BaTiO$_3$ as a insulating layer in order to increase app1ied electric field on phosphor. Changing on Dielectric and emission Properties was caused by a different viscosity of binder which filled on space between phosphor particle. 60cd/$m^2$ under 60V, 2kHz sinusoidal was gotten from ACPELD prepared in this work.

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Development of the Most Optimized Ionizer for Reduction in the Atmospheric Pressure and Inert Gas Area (감압대기 및 불활성가스 분위기에서 적합한 정전기 제거장치의 개발)

  • Lee, Dong Hoon;Jeong, Phil Hoon;Lee, Su Hwan;Kim, Sanghyo
    • Journal of the Korean Society of Safety
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    • v.31 no.3
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    • pp.42-46
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    • 2016
  • In LCD Display or semiconductor manufacturing processes, the anti-static technology of glass substrates and wafers becomes one of the most difficult issues which influence the yield of the semiconductor manufacturing. In order to overcome the problems of wafer surface contamination various issues such as ionization in decompressed vacuum and inactive gas(i.e. $N_2$ gas, Ar gas, etc.) environment should be considered. Soft X ray radiation is adequate in air and $O_2$ gas at atmospheric pressure while UV radiation is effective in $N_2$ gas Ar gas and at reduced pressure. At this point of view, the "vacuum ultraviolet ray ionization" is one of the most suitable methods for static elimination. The vacuum ultraviolet can be categorized according to a short wavelength whose value is from 100nm to 200nm. this is also called as an Extreme Ultraviolet. Most of these vacuum ultraviolet is absorbed in various substances including the air in the atmosphere. It is absorbed substances become to transit or expose the electrons, then the ionization is initially activated. In this study, static eliminator based on the vacuum ultraviolet ray under the above mentioned environment was tested and the results show how the ionization performance based on vacuum ultraviolet ray can be optimized. These vacuum ultraviolet ray performs better in extreme atmosphere than an ordinary atmospheric environment. Neutralization capability, therefore, shows its maximum value at $10^{-1}{\sim}10^{-3}$ Torr pressure level, and than starts degrading as pressure is gradually reduced. Neutralization capability at this peak point is higher than that at reduced pressure about $10^4$ times on the atmospheric pressure and by about $10^3$ times on the inactive gas. The introductions of these technology make it possible to perfectly overcome problems caused by static electricity and to manufacture ULSI devices and LCD with high reliability.

An Efficiency Improvement of the OLEDs due to the Thickness Variation on Hole-Injection Materials (정공주입물질 두께 변화에 따른 유기발광다이오드의 효율 개선)

  • Shin, Jong-Yeol;Guo, Yi-Wei;Kim, Tae-Wan;Hong, Jin-Woong
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.28 no.5
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    • pp.344-349
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    • 2015
  • A new information society of late has arrived by the rapid development of various information & communications technologies. Accordingly, mobile devices which are light and thin, easy and convenient to carry on the market. Also, the requirements for the larger television sets such as fast response speed, low-cost electric power, wider visual angle display are sufficiently satisfied. The currently most widely studied display material, the Organic Light-emitting Diodes(OLEDs) overwhelms the Liquid Crystal Display(LCD), the main occupier of the market. This new material features a response speed of more than a thousand times faster, no need of backlight, a low driving voltage, and no limit of view angle. And the OLEDs has high luminance efficiency and excellent durability and environment resistance, quite different from the inorganic LED light source. The OLEDs with simple device structure and easy produce can be manufactured in various shapes such as a point light source, a linear light source, a surface light source. This will surely dominate the market for the next generation lighting and display device. The new display utilizes not the glass substrate but the plastic one, resulting in the thin and flexible substrate that can be curved and flattened out as needed. In this paper, OLEDs device was produced by changing thickness of Teflon-AF of hole injection material layer. And as for the electrical properties, the four layer device of ITO/TPD/$Alq_3$/BCP/LiF/Al and the five layer device of ITO/Teflon AF/TPD/$Alq_3$/BCP/Lif/Al were studied experimentally.

Fabrication of ITO Thin Film by Sol-Gel Method (Sol-Gel 법을 이용한 ITO박막의 제조)

  • Kim Gie-Hong;Lee Jae-Ho;Kim Young-Hwan
    • Journal of the Korean Electrochemical Society
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    • v.3 no.1
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    • pp.11-14
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    • 2000
  • Transparent conducting ITO thin films have been studied and developed for the solar cell substrate or LCD substrate. ITO thin film has been mostly fabricated by high cost sputtering method. In this research, sol-gel method is applied to fabricate ITO thin film at lower cost. The research is focused on the establishment of process condition and development of precursor. Organic sol was made of indium tri-isopropoxide dissolved in ethylene glycol monoethyl ether. The hydrolysis was controled by addition of acetyl acetone. Tin(IV) chloride was added as dopant. Inorganic sol was made of indium acetate dissolve din normal propanol. Spin coating technique was applied to coat ITO on borosilicate glass. The resistivity of ITO thin film was approximately $0.01\Omega{\cdot}cm$ and the transmittance is higher than $90\%$ in a visible range.

What Is the Key Vacuum Technology for OLED Manufacturing Process?

  • Baek, Chung-Ryeol
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.95-95
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    • 2014
  • An OLED(Organic Light-Emitting Diode) device based on the emissive electroluminescent layer a film of organic materials. OLED is used for many electronic devices such as TV, mobile phones, handheld games consoles. ULVAC's mass production systems are indispensable to the manufacturing of OLED device. ULVAC is a manufacturer and worldwide supplier of equipment and vacuum systems for the OLED, LCD, Semiconductor, Electronics, Optical device and related high technology industries. The SMD Series are single-substrate sputtering systems for deposition of films such as metal films and TCO (Transparent Conductive Oxide) films. ULVAC has delivered a large number of these systems not only Organic Evaporating systems but also LTPS CVD systems. The most important technology of thin-film encapsulation (TFE) is preventing moisture($H_2O$) and oxygen permeation into flexible OLED devices. As a polymer substrate does not offer the same barrier performance as glass substrate, the TFE should be developed on both the bottom and top side of the device layers for sufficient lifetimes. This report provides a review of promising thin-film barrier technologies as well as the WVTR(Water Vapor Transmission Rate) properties. Multilayer thin-film deposition technology of organic and inorganic layer is very effective method for increasing barrier performance of OLED device. Gases and water in the organic evaporating system is having a strong influence as impurities to OLED device. CRYO pump is one of the very useful vacuum components to reduce above impurities. There for CRYO pump is faster than conventional TMP exhaust velocity of gases and water. So, we suggest new method to make a good vacuum condition which is CRYO Trap addition on OLED evaporator. Alignment accuracy is one of the key technologies to perform high resolution OLED device. In order to reduce vibration characteristic of CRYO pump, ULVAC has developed low vibration CRYO pumps to achieve high resolution alignment performance between Metal mask and substrate. This report also includes ULVAC's approach for these issues.

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