• 제목/요약/키워드: LB films

검색결과 391건 처리시간 0.025초

LB법에 의한 제막된 poly(3-hexylthiophene)의 발광특성 (Emitting Properties of Poly(3-hexylthiophene) deposited by LB method)

  • 서부완;김주승;구할본;이경섭;박복기;박계춘
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1999년도 추계학술대회 논문집 학회본부 C
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    • pp.962-964
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    • 1999
  • We studied emitting properties of devices fabricated using the spin-coating and Langmuir-Blodgett[LB] technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. Poly(3-hexylthiophene)[P3HT] LB films used as the emitting layer in light-emitting devices. LB monolayers were deposited 27 layers onto the indium-tin-oxide[ITO] as Y-type films by the vertical dipping method. The thickness is about 80nm. Absorption spectrum of LB films presented that P3HT is regiorandom conformation. Also, current-voltage-luminance characteristics and electroluminescence spectra of light-emitting devices fabricated by LB method is studied. In current-voltage-luminescence characteristics, turn-on voltage of P3HT LB film LEDs is higher than that of spin-coating LEDs. But electroluminescence spectrum is similar to the spin-coating LEDs. The orange-red light was clearly visible in a darkened room.

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LB법으로 첨가한 Poly(3-hexylthiophene)을 발광층으로 사용한 전계발광소자의 발광특성 (Emission Properties of Electro luminescent Devices using Poly(3-hexylthiophene) Deposited by LB Method)

  • 김주승;이경섭;구할본
    • 한국전기전자재료학회논문지
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    • 제14권9호
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    • pp.757-761
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    • 2001
  • We studied emitting properties of organic electroluminescent devices fabricated using the spin-coating and Langmuir-Blodgett(LB) technique. The LB technique has the advantage of precise control of the thickness better than spin-coating method. LB monolayer of poly(3-hexylthiophene)(P3HT) was deposited 27 layers onto the indium-tin-oxide(ITO) substrate as Y-type films by the vertical dipping method. In the absorption spectra, the λ$\_$max/ of P3HT-AA LB films and of spin-coating films showed about at 510, 545 and 590 nm corresponding to 2.43, 2.28, 2.10eV. And we observed that the turn-on voltage of devices deposited by LB method(10V) was higher than that of spin-coating method(8.5V) in voltage-current-luminance characteristic. In the logV-logJ characteristics of ITO/P3HT-AA LB/Al device, we confirmed that El device fabricated by LB method follows three conduction mechanisms: ohmic, space-charge-limited current(SCLC) conduction and trapped-carrier-limited space-charge current(TCLC) conduction.

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메틸렌기에 의한 지방산 LB막의 전기적 특성 (Electrical Properties of Fatty Acid LB Films by Methylene Group)

  • 최용성;강기호;김도균;권영수
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1999년도 춘계학술대회 논문집
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    • pp.349-352
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    • 1999
  • We have investigated the electrical characteristics of arachidic acid($C_{20}$), stearic acid(C_{18} and palmitic acid($C_{16}$) Langmuir-Blodgett(LB) films because the fatty acid systems have a same hydrophilic group and a different hydrophobic one (alkyl chain length). In this work, fatty acid systems were used as LB films and the status of the deposited films were confirmed by evaluating the capacitance and I-V characteristics. The conductivity of $C_{20}$, C_{18} and $C_{16}$ LB films obtained from I-V characteristics were about 5x $10^{15}$, 3x $10^{14}$ and 9x $10^{14}$[S/cm], espectively. These results have shown the insulating materials and could control the conductivity by changing the length of alkyl chain. Also, we have confirmed that the barrier height of fatty acid systems were about 1.32- 1.40[eV] and the relative dielectric constant were about 2.9~4.2. These values were almost the same ones obtained from dielectric characteristics.

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Octadecylviologen-(TCNQ$^{[-10]}$ )$_2$LB막의 광학 및 전기적 특성 연구 (A study on the optical and the electrical properties of octadecylviologen-(TCNQ$^{[-10]}$ )$_2$ LB films)

  • 박제상;이승엽;이용수;신동명;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1996년도 춘계학술대회 논문집
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    • pp.170-173
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    • 1996
  • The optical and the electrical properties of octadecylviologen-(TCNQ$\^$-/)$_2$LB(Langmuir-Blodgett) films have been studied. The films were made at 25mN/m with Y-type formation using kuhn type apparatus. According to a study of UV/visible absorption spectra, DS C, ESR, and I-V characteristics depending on temperatures, there is an internal change in OV-(TCNQ$\^$-/)$_2$ LB films near 350K. We have observed a status of Langmuir films using Brewster angle microscope at room temperature.

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LB법에 의한 분자소자의 기초연구 (I) (A Basic Study on Molecular Electronic Device by Langmuir-Blodgett Technique)

  • 권영수
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1989년도 추계학술대회 논문집 학회본부
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    • pp.98-100
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    • 1989
  • Langmuir-Blodgett(LB) technique will be used to produce ultra thin film, and then characterization of the physical and electrical properties of LB ultra thin films, this study will be an investigation for the possibilities of the ultra thin films as an Molecular Electronic Device.

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미리스트산과 스테아르산 혼합 LB막의 안정성에 관한 연구 (A Study on the Stability of Langmuir-Blodgett Films Mixed with Myristic Acid and Stearic Acid)

  • 박근호
    • 한국응용과학기술학회지
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    • 제34권2호
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    • pp.376-381
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    • 2017
  • 지방산 혼합물 단분자층 LB막의 전기화학적 특성을 통하여 그 안정성을 순환전압전류법으로 조사하였다. 지방산혼합물 LB막은 ITO glass에 LB법을 사용하여 제막하였다. 전기화학적 특성은 0.01N $KClO_4$ 용액에서 3 전극 시스템으로 순환전압전류법에 의해 측정하였다. 측정범위는 연속적으로 1650 mV로 산화시키고, 초기 전위인 -1350 mV로 환원시켰다. 주사속도는 각각 50, 100, 150, 200 및 250 mV/s로 설정하였다. 그 결과 지방산혼합물 LB막은 순환전압전류곡선으로부터 산화전류로 인한 비가역 공정으로 나타났다. 지방산혼합물 LB막은 전해질농도가 0.01 N $NaClO_4$ 용액에서 확산계수(D)는 각각 $7.9{\times}10^{-2}cm^2s^{-1}$을 얻었다.

인지질 화합물의 나노 Langmuir-Blodgett막의 전기화학적 특성에 관한 연구 (A Study on the Electrochemical Characteristics of Langmuir-Blodgett Nano-Films of Phospholipid Compound)

  • 정아진;박근호
    • 한국응용과학기술학회지
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    • 제29권2호
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    • pp.311-316
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    • 2012
  • 우리는 순환전압전류법에 의한 LB 필름에 대한 전기화학적 특성을 조사하였다. 인지질 화합물은 ITO glass에 Langmuir-Blodgett법을 사용하여 제막하였다. 0.5, 1.0, 1.5 및 2.0 N $NaClO_4$ 용액에서 3 전극 시스템 (Ag/AgCl 기준전극, 백금선 카운터 전극 및 LB 필름이 코팅된 ITO 작업전극)으로 순환전압전류법을 사용하여 전기화학적 측정을 시도하였다. 측정 범위는 연속적으로 1650 mV로 산화시키고, 초기전위인 -1350 mV로 환원시켰다. 그 결과, 인지질 화합물의 LB 필름은 순환전압전류도표로부터 오직 산화전류로 인한 비가역공정으로 나타났다. LB 필름의 확산계수(D) 효과는 인지질 화합물 양의 증가로 인하여 감소하였다.

PAAS LB 박막의 열자격 변위 전류에 관한 연구 (A study on the thermally-stimulated displacement current(TSDC) of the PAAS Langmuir-B1odgett(LB) films)

  • 이호식;김상걸;송민종;최명규;이원재;김태완;강도열
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 제2회 학술대회 논문집 일렉트렛트 및 응용기술전문연구회
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    • pp.11-14
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    • 2000
  • This paper describes a thennally stimulated displacement current(TSDC) of polyamic acid alkylamine salts(PAAS) Langmuir-Blodgett(LB) films, which is a precursor of polyimide(PI). The TSDC measurements of PAAS LB film were performed from room temperature to about $250^{\circ}C$ and the temperature was increased at a rate of $0.2^{\circ}C/s$. This show that this is TSDC peaks at about $70^{\circ}C$ in the arachidic acid LB films, and at about $70^{\circ}C$ and $160^{\circ}C$ in the PAAS LB films. Results of this measurements indicate that one small peak at $70^{\circ}C$ is resulted from a softening of the alkyl group and the large peak at $160^{\circ}C$ is possibly due to dipole moment of C-O group in the PAAS molecule. We have calculated the vertical component of dipole moment of the P AAS LB film out of the TSDC curves. It shows that the dipole moment of PAAS LB film is about -40mD at $70^{\circ}C$ and about 200mD at $160^{\circ}C$ in the first measurement of TSDC. In the second measurement of TSDC of PAAS LB film after cooling down to room temperature, the TSDC peaks are almost disappeared.

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메틸렌기의 길이에 따른 지방산계 LB막의 유전 및 전기적 특성 (Dielectric and Electrical Characteristics of Fatty Acid System LB Filmes According to Length of Methylene Group)

  • 김도균;강기호;최용성;권영수
    • 한국전기전자재료학회논문지
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    • 제13권4호
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    • pp.300-305
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    • 2000
  • We have investigated the dielectric and electrical characteristics of palmitic acid(PA) stearic acid(SA) and arachidic acid(AA) Langmuir-Blodgett(LB) films because these fatty acid systems have a same hydrophilic group and a different hydrophobic one(methylene group or alkyl chain length). The fatty acid systems were used as LB films and the status of the deposited films was confirmed by evaluating the transfer ratio the UV absorption and the capacitance. The dielectric characteristics such as the frequency-capacitance characteristics and the dielectric dispersion and absorption characteristics of PA SA and AA through-plane were measured. The relative dielectric constants of PA, SA and AA LB films were about 3.0~4.6, 2.7~3.0 and 2.4~3.0 respectively. That is the relative dielectric constants were decreased in proportion to the chain length of methylene group. Also the dielectric dispersion and absorption of each fatty acid LB films have arisen from spontaneous polarization of dipole polarization in the range of 10$^4$~10$^{5}$ [Hz]. The conductivity of PA, SA and AA LB films obtained from I-V characteristics were about 9$\times$10$^{-14}$ , 3$\times$10$^{-14}$ and 5$\times$10$^{-15}$ [S/cm]. respectively. These results have shown the insulating materials and could control the conductivity y changing the length of methylene group. Also we have confirmed that the barrier height of fatty acid systems were almost the same ones obtained from dielectric characteristics.

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아조벤젠기를 가진 지방산과 $L-{\alpha}-dimyristoylphosphatidylcholine$ 혼합 LB막의 전기화학적 특성 (Electrochemical Properties of Langmuir-Blodgett(LB) Films of Fatty Acid Containing Azobenzene and $L-{\alpha}-dimyristoylphosphatidylcholine$ Mixture)

  • 박근호;최성현;송주영
    • 한국응용과학기술학회지
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    • 제22권4호
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    • pp.315-322
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    • 2005
  • We investigated the electrochemical properties for Langmuir-Blodgett (LB) films mixed with 4-octyl-4'-(5-carboxylpentamethyleneoxy)azobenzene (denoted as 8A5H) and $phospholipid(L-{\alpha}-dimyristoylphosphatidylcholine$, denoted as DMPC). LB films of 8A5H monolayer and 8A5H-DMPC were deposited by using the Langmuir-Blodgett method on the indium tin oxide(ITO) glass. The electrochemical properties measured by using cyclic voltammetry with a three_electrode system, an Ag/AgCl reference electrode, a platinum wire counter electrode and LB film-coated ITO working electrode at various concentrations(0.1, 0.5, and 1.0mol/L) of $NaClO_4$ solution. A measuring range was reduced from initial potential to -1350mV, continuously oxidized to 1650mV and measured to the initial point. The scan rates were 50, 100, 150 and 200mV/s, respectively. As a result, LB films of 8A5H monolayer appeared irreversible process caused by only the oxidation current from the cyclic voltammogram and LB films of 8A5H-DMPC mixture were found to be caused by a reversible oxidation-reduction process.