• The Korean Journal of Ceramics
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• 제2권4호
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• pp.221-225
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• 1996

In diamond synthesis by metal film growth method under high pressure and high temperature, the nucleation and growth of diamond was observed dependent on the carbon source variation from graphite powder to the heat treated powders of lamp black carbon. At the low driving force condition near equilibrium pressure and temperature line, nucleation of diamond did not occur but growth of seed diamond appeared in the synthesis from lamp black carbon while both nucleation and growth of diamond took place in the synthesis from graphite. Growth morphology change of diamond occurred from cubo-octahedron to octahedron in the synthesis from graphite but very irregular growth of seed diamond occurred in the synthesis from lamp block carbon. Lamp black carbon transformed to recrystallized graphite first and very nucleation of diamond was observed on the recrystallized graphite surface. Growth morphology of diamond on the recrystallized graphite was clear cubo-octahedron even at higher pressure departure condition from equilibrium pressure and temperature line.

• 한국산업융합학회 논문집
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• 제1권2호
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• pp.55-64
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• 1998

This paper deals with the effects of fluorescent lamp description and luminance level on the occupant's brightness perception and other sensation in building interiors. The following experiments were conducted: the subjects compared on room lit by daylight fluorescent lamps with the other room lit by the different lamp description at equal luminance at equal luminance level. The degree of that effect decreased with a rise in luminace level. The brightness perception had high correlation with the visual clarity and no correlation with favorite sensation.

• 한국인쇄학회지
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• 제29권2호
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• pp.83-92
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• 2011

A inorganic powder EL lamp was made by screen printing technique with phosphor ink and dielectric ink. The thickness change of a phosphor ink layer and a dielectric ink layer were not influenced on dielectric content, but rely on phosphor size and vehicle. Once finishing screen printing technique with phosphor ink and dielectric ink, and its surface has been printed again before not drying of phosphor ink and dielectric ink. Then phosphor ink and dielectric ink were not transferred. The electric capacity of inorganic powder EL lamp was more influenced on dielectric content than the thickness of dielectric ink layer, and it was more dependent on the thickness of phosphor ink layer than the thickness of dielectric ink layer.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2008년도 International Meeting on Information Display
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• pp.1427-1429
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• 2008

In this paper, an illumination system design using two lamps was proposed to improve the brightness of the projector. The proposal is based on the results from optical simulation. The prism array was applied to maintain the same optical properties, such as brightness distribution for the divergence angle and the composed beam size of the system. These were compared to those of the one UHP lamp system. The brightness of the two-lamp system, having a panel size of 0.74" and an f/2.9, increased by a factor of 1.7 when compared to the brightness of one UHP lamp system.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2196-2198
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• 2005

The luminous intensity distribution of a 1W high-power LED with a wide view angle should be concentrated to be used as a light source for an automotive reading lamp. In this paper, an optical lens made of PMMA is simulated by using an optical design software for that purpose. As the result, with the help of the devised lens, the reading light gives over 80 lx at the center of a target surface of radius of 0.2m located below 0.5m from the lamp, and a minimum of 20 lx at the perimeter of the target surface. Thus, a 1W high-power LED with an appropriate lens would suffice for an automotive reading lamp.

• 전력전자학회:학술대회논문집
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• 전력전자학회 2001년도 전력전자학술대회 논문집
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• pp.589-593
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• 2001

This paper presents a high frequency modulation electronic ballast for the metal halide lamp. As the proposed ballast operates in high frequency ranges (20kHz - 100kHz) and it can start up the lamp using the LC resonant circuit without external igniter, the proposed ballast is very compact. The proposed ballast is controlled with the modulated frequency in the range of 20kHz to 100kHz, and it has variable modulating frequencies between 200Hz and 2kHz in order to avoid the acoustic resonance phenomenon. In this paper, a new realtime acoustic resonance detection method is described and the experimental results with the proto-type ballast of 150W metal halide lamp with the dimming function are discussed.

• 조명전기설비학회논문지
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• 제17권2호
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• pp.10-16
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• 2003

최근 고급차의 헤드라이트용 램프로 메탈핼라이드 램프가 사용되어지면서 자동차의 고급스런 분위기와 많은 광량으로 인하여 사물의 판독이 용이하여 특히 야간 운전시 많은 사람의 안전에 기여하고 있다[1][2][3]. 그러나 현재까지 국내에게 개발된 안정기는 신뢰도 및 안정성이 낮기 때문에 고가에 수입하여 일부 차에만 적용되고 있는 상태이다[4]. 본 논문은 자동차 헤드라이트용 전자식 안정기에 관한 내용을 다루었다. 전자식 안정기의 구성은 플라이백 컨버터, 하프브리지 인버터, 램프 이그니션을 위한 이그나이터 부분으로 이루어졌다. HID 램프가 가지는 음향공명 현상을 피하기 위해서 400(Hz)의 구형파로 램프를 동작 시켰으며, 램프 점등 초기에 더 많은 에너지를 램프에 공급하는 방법으로 램프 동작 주파수를 가변시키는 방법과 동시에 램프 점등 상태를 안정화를 위한 상태 천이 전류 공급 회로를 사용하였다. 본 논문의 확인 및 평가는 12[V] 축전지와 35[W] HID 램프를 사용해서 확인하였다.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.847-851
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• 2000

In this study, contour-vibration-mode Pb($Ni_{1/2}$,$W_{1/2}$)$O_3$-Pb(Zr,Ti)$O_3$ piezoelectric transformers for driving a 28W(T5) fluorescent lamp were fabricated to the modified filter structure with ring and dot electrodes which has been developed for application in 455kHz AM radios. The piezoelectric transformers were fabricated to the size of $31.5$\times$31.5$\times$2.5$mm^3$ with the variations of ring/dot electrode area ratio. Driving of piezoelectric transformer was carried out with input region for the ring electrode and output region for the dot electrode. The electrical properties and characteristic temperature rises caused by the vibration were measured at various load resistances. A 28 W fluorescent lamp, T5, was successfully driven by the fabricated transformer. The transformer with ring/dot electrode area ratio of 1.83 exhibited the best properties in terms of output power, efficiency and characteristic temperature rise, 30.95 W, 97.57% and8.3$^{\circ}C$ respectively.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2007년도 7th International Meeting on Information Display 제7권2호
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• pp.1545-1546
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• 2007

Zinc gallate-based RGB phosphors and vertically aligned carbon nanotube emitters are prepared for flat field-emission lamp. The blend phosphors of blue $ZnGa_2O_4$, green $ZnGa_2O_4:Mn^{2+}$ and red $ZnGa_2O_4:Cr^{3+}$ are coated on the front glass, and the carbon nanotubes are chemically bonded on the rear ITO glass as a cathode.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2009년도 제38회 동계학술대회 초록집
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• pp.322-322
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• 2010

For boron doping on n-type silicon wafer, around $1,000^{\circ}C$ doping temperature is required, because of the relatively low solubility of boron in a crystalline silicon comparing to the phosphorus case. Boron doping by fiber laser annealing and lamp furnace heat treatment were carried out for the uniformly deposited p-a-Si:H layer. Since the uniformly deposited p-a-Si:H layer by cluster is highly needed to be doped with high temperature heat treatment. Amorphous silicon layer absorption range for fiber laser did not match well to be directly annealed. To improve the annealing effect, we introduce additional lamp furnace heat treatment. For p-a-Si:H layer with the ratio of $SiH_4:B_2H_6:H_2$=30:30:120, at $200^{\circ}C$, 50 W power, 0.2 Torr for 30 min. $20\;mm\;{\times}\;20\;mm$ size fiber laser cut wafers were activated by Q-switched fiber laser (1,064 nm) with different sets of power levels and periods, and for the lamp furnace annealing, $980^{\circ}C$ for 30 min heat treatment were implemented. To make the sheet resistance expectable and uniform as important processes for the $p^+$ layer on a polished n-type silicon wafer of (100) plane, the Q-switched fiber laser used. In consequence of comparing the results of lifetime measurement and sheet resistance relation, the fiber laser treatment showed the trade-offs between the lifetime and the sheet resistance as $100\;{\omega}/sq.$ and $11.8\;{\mu}s$ vs. $17\;{\omega}/sq.$ and $8.2\;{\mu}s$. Diode level device was made to confirm the electrical properties of these experimental results by measuring C-V(-F), I-V(-T) characteristics. Uniform and expectable boron heavy doped layers by fiber laser and lamp furnace are not only basic and essential conditions for the n-type crystalline silicon solar cell fabrication processes, but also the controllable doping concentration and depth can be established according to the deposition conditions of layers.