• Title/Summary/Keyword: L막

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Dielectric Relaxation Time of Long Chain Fatty Acid Langmuir films (장쇄지방산 L막의 완화 시간)

  • Cho, Dong-Kyu;Chang, Hun;Oh, Jae-Han;Gang, Yong-Chul;Choi, Young-Il;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2000.11a
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    • pp.279-282
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    • 2000
  • The displacement current measurement has been employed to study the dielectric properties of Langmuir films. A method for determining the dielectric relaxation time $\tau$ of floating monolayers on water surface is presented. The displacement current flowing across monolayers is analyzed using a rod-like molecular model. It's revealed that the dielectric relaxation time $\tau$ of monolayers in the isotropic polar orientational phase is determined using a liner relationship between the monolayers compression speed $\alpha$ and the molecular maximum area $A_{m}$. The compression speed $\alpha$ was about 30, 40, 50mm/minmm/min

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급속열처리법에 의한 재산화질화산화막의 특성

  • Lee, Gyeong-Su;No, Tae-Mun;Lee, Jung-Hwan;Nam, Gi-Su;Lee, Jin-Hyo
    • ETRI Journal
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    • v.11 no.3
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    • pp.11-22
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    • 1989
  • Stress에 잘 견딜 수 있는 metal-oxide-semiconductor field effect transistor(MOSFET)의 매우 얇고(10mm 이하) 고신뢰성을 갖는 게이트 절연막을 개발하기 위해서 급속열처리법을 이용하여 제조한 재산화질화산화막의 특성에 관하여 연구하였다. AES 분석에 의하여 8nm 두께의 초기산화막을 질화시킬 때 산화막의 계면이 우선적으로 질화가 일어났으며, 질화된 막을 재산화시킬 때 표면과 계면의 [N]가 감소하였다. 또한 재산화시킬 경우 두께가 약간 증가함을 보였으며, 질화가 강하게 될수록 두께 증가는 크지 않았다. 전기적 특성으로써 I-V 특성과 고주파(1MHz) C-V 특성, 정전류 stress 후의 고주파 C-V 특성 변화 들을 조사한 결과 $950^{\circ}C$ 60초 동안 질화시킨 재산화질화산화막($ONO_L막$) 은 정전류 stress에 대하여 flat band 전압 변화에 계면 상태 밀도(interface state density)변화가 적고, 절연파괴전압(breakdown voltage)특성 등이 우수하게 나타났다.

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Optical and electrical properties of the PAAS L films and LB films observed by BAM (BAM으로 관측한 PAAS L막의 특성 및 LB막의 광학적, 전기적 특성에 관한 연구)

  • Lee, Seung-Yop;Kim, Tae-Wan;Kang, Dou-Yol
    • Proceedings of the KIEE Conference
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    • 1996.07c
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    • pp.1725-1727
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    • 1996
  • Brewster angle microscopy(BAM) makes it possible to measure domains of Langmuir films. Especially, formation and phase transition of the PAAS Langmuir monolayers from a gas phase to a solid phase at the air-water interface were observed by the use of BAM. And also we observed the comparative images of films deposited at each phase. The UV/visible absorption spectra of this films showed molecular intensity and aggregation at each state. The electrical properties of this material were measured by current-voltage(I-V) characteristics.

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A Study on the Microstructure of Organic Ultra Thin Films and Phase Transition of Langmuir Films in BAM (BAM을 이용한 L막의 상전이 현상과 유기초박막의 미세구조에 관한 연구)

  • Kim, Byung-Geun;Chon, Dong-Kue;Kim, Young-Keun;Lee, Kyung-Sup
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.07b
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    • pp.938-941
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    • 2003
  • It is well known that the state of existence of molecules on the surface of water changes during compression of the molecules. Electric methods, such as measurement of the surface potential or displacement current are also useful for investigating dynamic changes of molecular state on the water surface during compression and Transformation of molecular film occurs only usually in air-water interface, 2 dimensions domain's growth and crash are achieved. Organic thin film that consist of growth of domain can understand correct special quality of accumulation film supplying information about fine structure and properties of matter of device observing information and so on that is surface forward player and optic enemy using AFM one of SPM application by nano electronics. In this paper Langmuir (L) that is one of basis technology to manufacture of organic matter device using biology material PBDG that is kind of polypeptide that have biology adaptedness. The Experiment method used ${\pi}-A$ isotherm and BAM(Brewster Angle Microscopy), using the BAM, we can to the molecular orientation of monolayer on the water surface and directly see the morphology of the films on water subphase as well as that of the films.

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