• Korean Journal of Optics and Photonics
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• v.1 no.1
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• pp.33-39
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• 1990

By developing a computer simulation code for discharge excited KrF excimer laser, we analyzed mainly the effects of buffer gas for the $KrF^*$ formation. the $KrF^*$ relaxation. and the absorption of the laser radiation. The $KrF^*$ formation efficiency were found to be 7.5%, 19% and the $KrF^*$ relaxation kinetic reactions were found to be 45%, 30% at the charging voltage of 30 KV and He. Ne buffer gas. respectively. But the absorption of the 248 nm laser radiation were less than 10% by the buffer gas.er gas.

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.3-8
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• 1990

방전여기 방식의 KrF 엑사이머 레이저의 컴퓨터 시뮬레이션 프로그램을 개발하여 방전중의 KrF 형성, 탈여기 및 흡수채널에서 완충가스의 영향을 이론적으로 해석하였다. 생성효율은 Ne 완충가스에서 He보다 2.2배 정도 높았으며, KrF의 탈여기는 He과 Ne 완충가스에서 각각 50%, 30% 정도의 비율을 차지하였다. 그러나 흡수 과정에서는 완충가스의 영향이 크지 않은 것을 알 수 있었다.

• Proceedings of the KIEE Conference
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• 1989.11a
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• pp.505-508
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• 1989

A computer simulation code of UV preionized discharge KrF laser is developed, including time dependent circuit equations, boltzmann equations, and plasma kinetic equations for various atomic and molecular species. Rate constants for electron collision processes are calculated with a boltzmann equations as a function of E/N. In this study, we studied mainly the $KrF^*$ formation process, relaxation process, and the 248nm absorption process as a function of charging voltage.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.459-461
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• 1990

Me performed an experiment about preionization electron number density of charge transfer type KrF excimer laser. At the total pressure of 1.8 and 2.2 atm with helium (He) buffer gas, the experimental range of the electron number density is 8-9 ${\times}$ 10 cm The distance between electrode and preionization pin is 15 mJ at charging voltage of 27kV,gas pressure of 2.2 atm,gas mixture of F /Kr/He = 0.3/396.7(%).

• Proceedings of the Optical Society of Korea Conference
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• 1990.02a
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• pp.9-12
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• 1990

본 연구는 KrF 엑사이머 레이저 증폭을 하기 위하여 먼저 능동매질을 N도 사용하여 발전기와 증폭기의 시간적인 동기회에 주 목적을 두었고 안정한 증폭기의 출력을 얻기 위해 방전관 에너지의 5%를 예비전리로 최적화 시켰으며 방전에 사용되는 Spark Gap Switch의 내부 인덕턴스를 고찰하였다.

• Journal of the Korean Vacuum Society
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• v.4 no.3
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• pp.253-260
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• 1995

유전장벽 방전(또는 silent방전)은 조절된 마이크로아크방전 형태로서 비교적 높은 압력(0.1~수기압)에서도 방전이 안정하므로 엑시머 생성에 의한 진공자외선 및 자외선 광원으로 적합하다. 본 연구에서는 평면형 및 원통형 유전장벽 방전장치를 제작하였고, Ar, Kr, Xe와 3% F2/He의 혼합기체를 이용하여 ArF*(193nm), KrF*(248nm), XeF*(351nm)엑시머자외선 생성실험을 수행하였다. 또한 부하전력, 기체압력, 기체조성등의 방전조건에 대한 KrF*(248nm)발광세기의 의존성을 조사하였다.

• Proceedings of the Acoustical Society of Korea Conference
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• 1993.06a
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• pp.29-33
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• 1993

펄스레이저를 고체표면에 조사하면 광-음향효과에 의해 입사지점에서 음향파원이 형성되고 음향파원의 형태와 재료의 특성에 따라 여러 유형의 종파, 횡파 및 표면파의 음향에너지가 발생된다. 본 연구에서는 열탄성영역과 플라스마영역에서 종파와 횡파의 변위파형을 해석하여 모의실험을 수행하였다. 실험에서는 KrF엑시머레이저를 탄소강, 알루미늄, 황동에 조사하여 플라스마영역에서의 광-음향신호를 검출하였으며 이론과 비교하여 분석하였다.

• Proceedings of the Korean Society of Precision Engineering Conference
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• 1997.04a
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• pp.1058-1062
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• 1997

Development of laser induced chemical etching technologt with KrF laser are carried out in this study for micromachining of silicon wafer. The paper is devoted to experimental identification of excimer laser induced mechanism of silicon under chlorine pressures(0.02~500torr). Experimental results on pulsed KrF excimer laser etching of silicon in chorine atmosphere are presented. Etching rate dependency on laser fluence and chlorine pressure are discussed on the basis of experimental analysis, it is concluded that accurate digital micro machining process of silicon wafer can achieved by KrF laser induced chemical etching technology.

• Proceedings of the KIEE Conference
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• 1990.07a
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• pp.462-464
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• 1990

We report the development of a surface discharge preionized KrF discharge Laser with a new type of high-brightness Corona preionizer using a segmented columnar $BaTiO_3$ dielectric. This Laser characteristic was higher value than that obtained with the conventional corona preionizer using a glass, $Al_2O_3ceramic$, Kapton film, or a Teflon insulator.

• Korean Journal of Optics and Photonics
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• v.12 no.3
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• pp.177-183
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• 2001

The KrF laser was employed to study NO fluorescence in lean-bum as well as in soot-bum flames. Blue-shifted NO fluorescence was observed in both of the flames. For both of the flames, the fluorescence intensity of NO and its relative background noise signal were measured with respect to the concentration of seeded NO molecule in the flame and the laser intensity. The results were analyzed qualitatively. Also, NO concentration distribution in the lean-bum flame was qualitatively determined from the intensity of the NO fluorescence. cence.