• Title/Summary/Keyword: Korean Fims

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The distribution of the molecular hydrogen in the Milky way

  • Jo, Young-Soo;Seon, Kwang-Il;Min, Kyoung-wook
    • The Bulletin of The Korean Astronomical Society
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    • v.41 no.2
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    • pp.40.1-40.1
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    • 2016
  • We present the far-ultraviolet fluorescent molecular hydrogen ($H_2$) emission map observed with FIMS/SPEAR for ~76% of the sky. The fluorescent $H_2$ emission is found to be saturated by strong dust extinction at the optically thick, Galactic plane region. However, the extinction-corrected intensity of fluorescent $H_2$ emission is found to have strong linear correlations with the well-known tracers of the cold interstellar medium, such as the E(B-V) color excess, neutral hydrogen column density N(HI), $H{\alpha}$ emission, and CO $J=1{\rightarrow}0$ emission. The all-sky molecular hydrogen column density map is also obtained using a photodissociation region model. We also derive the gas-to-dust ratio, hydrogen molecular fraction ($f_{H2}$), and $CO-to-H_2$ conversion factor ($X_{CO}$) of the diffuse interstellar medium. The gas-to-dust ratio is consistent with the standard value $5.8{\times}10^{21}atoms\;cm^{-2}mag^{-1}$, and the $X_{CO}$ tends to increase with E(B-V), but converges to the Galactic mean value $1.8{\times}10^{20}cm^{-2}K^{-1}km^{-1}s$ at optically thick regions with E(B-V)>2.0.

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Global distribution of far-ultraviolet emission from the highly ionized gas in the Milky Way

  • Jo, Young-Soo;Seon, Kwang-Il;Min, Kyoung-Wook;Edelstein, Jerry;Han, Wonyong
    • The Bulletin of The Korean Astronomical Society
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    • v.43 no.1
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    • pp.43.2-44
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    • 2018
  • One of the keys to interpreting the characteristics and evolution of interstellar medium in the Milky Way is to understand the distribution of hot gas ($10^5-10^6K$). Gases in this phase are difficult to observe because they are in low density and lack of easily observable tracers. Hot gases are observed mainly in the emission of the FUV ($912-1800{\AA}$), EUV ($80-912{\AA}$), and X-rays (T> $10^6K$) of which attenuation is very high. Of these, FUV emission lines originated from high-stage ions such as O VI and C IV can be the most effective tracers of hot gases. To determine the spatial distribution of O VI and C IV emissions, we have analyzed the spectra obtained from FIMS (Far-ultraviolet IMaging Spectrograph), which covers about 80 percent of the sky. The hot gas volume filling factor, which varies widely from 0.1 to 0.9 depending on the supernova explosion frequency and the evolution model, has been calculated from the O VI and C IV maps. The hot gas generation models has been verified from the global distribution of O VI and C IV emissions, and a new complementary model has been proposed in this study.

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A study on the effect of process parameters on the corrosion resistance of ion plated Tin films with Ti and Ni interlayers. (이온플레팅시 공정조건이 Ti 및 Ni 중간층을 갖는층을 갖는 TiN 박막의 내식성에 미치는 영향에 관한 연구)

  • 하희성;이종민;이인행;이정중
    • Journal of Surface Science and Engineering
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    • v.30 no.1
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    • pp.33-43
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    • 1997
  • The effects of process parameters substrate such as substrate current and substrate temperature on the corrosion resistance of ion plated TiN film were investigated. TiN fims were deposited on speed steel on which Ti or Ni hed been previously evaporated. Dense TiN films could be obtained under higher substrate current(1A) and substrate temperature($500^{\circ}C$), whereas TiN films deposited with lower substances current(0.5A) and substrate temperature($300^{\circ}C$) showed porous structure. The corrosion resistances of high speed steel was considerably increased when dense TiN films had been formed on it. The effect of Ti and Ni interlayer on the increase of the corrosion resistance was also significant with dense TiN films, while there was little effect of interlayer on the corrosion resistance when TiN films were porous. the effect of interlayer on the corrosion resistance was more outstanding with Ti then with Ni, because Ti reacts more easily with oxygen to form an oxide layer, and it also shows higher resistance against chlorine containing corrosion media.

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Study on Morphology and Current-Voltage (I-V) property of Arachidic acid LB film (Arachidic acid LB 막의 표면 이미지와 I-V 특성 연구)

  • Ryu, Kil-Yong;Lee, Nam-Suk;Park, Sang-Hun;Park, Jae-Chul;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.05a
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    • pp.61-62
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    • 2006
  • 본 연구에서는 대표적인 양친매성분자인 Arachidic acid를 이용하여 박막을 제작하였으며, 층수 변화에 따른 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid 는 포화지방산으로 ($CH_3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, Langmuir-Blodgett (LB) Trough을 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2 mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB 막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A 곡선, AFM(Atomic force microscopy) 등을 통하여 확인하였다. 또한 LB 막을 Metal/유기물 LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

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Growth and characterization of ZnO thin films on r-plane sapphire substrates by plasma-assisted molecular beam epitaxy (R-면 사파이어 기판 위에 플라즈마 분자선 에피탁시법을 이용한 산화아연 박막의 성장 및 특성평가)

  • Han, Seok-Kyu;Hong, Soon-Ku;Lee, Jae-Wook;Lee, Jeong-Yong
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.155-156
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    • 2006
  • Single crystalline ZnO fims were successfully grown on r-plane sapphire substrate by plasma-assisted molecular beam epitaxy. Epitaxial relationship between the ZnO film and the-r-plane sapphire was determined to be [-1101]$Al_2O_3\;{\parallel}$ [0001]ZnO, [11-20]$Al_2O_3\;{\parallel}$ [-1100]ZnO based on the in-situ RHEED analysis and confirmed again by HRXRD measurements. Grown (11-20) ZnO films showed faceted structure along the <0001> direction and the RMS roughness was about 4 nm.

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Study on Morphology and Current-Voltage (I-V) property of Arachidic acid Thin film by LB method (LB법을 이용한 Arachidic acid 박막의 표면이미지와 I-V특성 연구)

  • Ryu, Kil-Yong;Lee, Nam-Suk;Park, Sang-Hun;Park, Jae-Chul;Kwon, Young-Soo
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2006.06a
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    • pp.394-395
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    • 2006
  • 본 연구에서는 Arachidic acid Langmuir-Blodgett (LB) 막의 표면이미지와 전압-전류 특성을 측정하였다. Arachidic acid는 포화지방산으로 ($CH3(CH_2)_{18}$ COOH)의 구조를 가지며, 크기가 $27.5\;{\AA}$으로 $CH_3(CH_2)_{18}$의 소수기와 COOH의 친수기로 구성되어 있어, LB Trough를 사용하여 박막제작과 분자제어가 쉽다. Chloroform을 용매로 하여 2mmol/l의 농도를 조성하여 ${\pi}$-A 등온선을 통해 기체 상태, 액체 상태, 고체 상태를 관찰하였다. LB막의 제작 및 평가에서 막의 안정성은 ${\pi}$-A곡선, AFM (Atomic force microscopy) 등을 통하여 확인 하였다. 또한 LB 막을 Metal/LB막/Metal 구조의 소자로 제작하여 전압-전류 특성을 측정하였다.

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Dust scattering simulation of far-ultraviolet light in the Milky Way

  • Jo, Young-Soo;Seon, Kwang-Il;Witt, Adolf N.;Min, Kyoung-Wook
    • The Bulletin of The Korean Astronomical Society
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    • v.44 no.2
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    • pp.48.2-48.2
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    • 2019
  • Light from universe is absorbed, scattered, and re-released by interstellar dust before it reaches us. Therefore, accurate correction of the observed light requires not only spatial distribution of interstellar dust, but also information on absorption and scattering for each wavelength. Far-ultraviolet (FUV) light is mainly produced by bright, young O-type and some B-type stars, but it is also observed in interstellar space without these stars. Called FUV Galactic light (DGL), these lights are mostly known as starlight scattered by interstellar dust. With the recent release of GAIA DR2, not only accurate distance information of stars in our Galaxy, but also accurate three-dimensional distribution maps of interstellar dust of our Galaxy were produced. Based on this, we performed 3-dimensional Monte Carlo dust scattering radiative transfer simulations for FUV light to obtain dust scattered FUV images and compared them with the observed FUV image obtained by FIMS and GALEX. From this, we find the scattering properties of interstellar dust in our Galaxy and suggest the intensity of extragalactic background light. These results are expected to aid in the study of chemical composition, size distribution, shape, and alignment of interstellar dust in our Galaxy.

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HIGH RESOLUTION DELAY LINE READOUT ELECTRONOCS FOR THE TIME 2-D POSITION SENSITIVE DETECTOR (원자외선 분광기의 2차원 위치검출을 위한 고 분해능 지연선 검출회로)

  • 이진근;신종호;민경욱;남욱원;공경남
    • Journal of Astronomy and Space Sciences
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    • v.19 no.1
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    • pp.57-66
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    • 2002
  • We designed two-dimensional position sensitive MCP(mixt.ochannel plate) detector for FIMS, which is composed of MCP, delay line anode, and delay line readout elec-tronics. And also, we fabricated and tested for the operation stability and resolution of the delay line readout electronic system. An anode simulator and a stimulator were used instead of the real MCP and anode during the test to see the electronic contribution to the resolution. The readout electronics was operated stably and showed time resolution of about 560 ps for the spectral direction and about 100 ps for the image direction respectively.

The preparation of ${SiO_x}{N_y}$ thin films by reactive RF sputtering method (고주파 반응성 스퍼터링법에 의한 ${SiO_x}{N_y}$ 박막의 제작)

  • 조승현;최영복;김덕현;정성훈;문동찬;김선태
    • Korean Journal of Optics and Photonics
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    • v.11 no.1
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    • pp.13-18
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    • 2000
  • The SiOxNy thin films were prepared on Si(lOO) by reactive RF sputtering method. The reactive gas ratio and the power were used as parameters for depositing SiOxNy thin fims. The properties of ${SiO_x}{N_y}$ thin tilms were investigated by XRD, XPS, refractive index and extinction coefficient analyzer (n'||'&'||'k analyzer), and FfIR. It was found by the results of the x-ray diffraction measurement that SiOxNy thin films were grown to an amorphous structure. From the results of the XPS, and the n'||'&'||'k analyzer, it was found that refractive index was intended to increase with the increasement of the relative nitrogen contents of the ${SiO_x}{N_y}$ thin films.

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Behavior of Surface Compositions in CMP Process for PZT Thin Fims (PZT 박막의 CMP 공정중 표면 조성 거동)

  • Ko, Pil-Ju;Kim, Nam-Hoon;Lee, Woo-Sun
    • Proceedings of the KIEE Conference
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    • 2006.07c
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    • pp.1448-1449
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    • 2006
  • Pb(Zr,Ti)$O_3$ is one of the most attractive ferroelectric materials for realizing the FeRAM due to its higher remanant polarization and the ability to withstand higher coercive fields. Generally, the ferroelectric materials were patterned by a plasma etching process for high-density FeRAM. The applicable possibility of CMP process to pattern Pb(Zr,Ti)$O_3$ instead of plasma etching process was investigated in our previous study for improvement of an angled sidewall which prevents the densification of ferroelectric memory and is apt to receive the plasma damage. Our previous study showed that good removal rate with the excellent surface roughness compared to plasma etching process were obtained by CMP process for the patterning of Pb(Zr,Ti)$O_3$. The suitable selectivity to TEOS without any damage to the structural property of Pb(Zr,Ti)$O_3$ was also guaranteed. In this study, the removal mechanism of $Pb_{1.1}(Zr_{0.52}Ti_{0.48})O_3$ coated by sol-gel method was investigated. Surface analysis of polished specimens at the best and worst conditions was carried out by XPS.

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