• 한국수자원학회논문집
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• 제47권10호
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• pp.935-943
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• 2014

정규식생지수 (Normalized Difference Vegetation Index)는 각종 수문모델, 지표-대기 모델에 입력 자료로 사용되는 인자로 대기와 지표 사이의 에너지 교환 및 수문기상학적인자의 변동성을 파악하는데 매우 중요하다. 이에따라, 식생고유의 분광반사 특성을 이용하여 인공위성으로 관측하는 NDVI 값의 정확한 모의를 위한 연구가 진행되고 있다. 본 연구에서는 국내 최초의 정지궤도위성인 Communication, Ocean and Meteorological Satellite (COMS)에서 산출된 정규식생지수의 적용성을 판단하기 위해 Maximum Value Composite (MVC) 방법을 활용하여 산정한 16일 단위, 8일 단위의 정규식생지수와 MODerate-resolution Imaging Spectro-radiometer (MODIS) 센서에서 관측된 정규식생지수와 비교 검증을 실시하였다. 그 결과 16일 단위와 8일 단위 NDVI 모두 좋은 결과를 나타내었다. 이러한 결과를 토대로 COMS의 활용 가능성을 확인할 수 있었으며 추후 수문 생태학적 연구에 중요한 자료로 사용될 수 있을 것이다.

• Transactions on Electrical and Electronic Materials
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• 제12권3호
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• pp.115-118
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• 2011

Process characterization of the chemical mechanical polishing (CMP) process for undensified phosphosilicate glass (PSG) film is reported using design of experiments (DOE). DOE has been addressed to experimenters to understand the relationship between input variables and responses of interest in a simple and efficient way. It is typically beneficial for determining the adequate size of experiments with multiple process variables and making statistical inferences for the responses of interests. Equipment controllable parameters to operate the machine include the down force (DF) of the wafer carrier, pressure on the backside of the wafer, table and spindle speed (SS), slurry flow rate, and pad condition. None of them is independent; thus, the interaction between parameters also needs to be indicated to improve process characterization in CMP. In this paper, we have selected the five controllable equipment parameters, such as DF, back pressure (BP), table speed (TS), SS, and slurry flow (SF), most process engineers recommend to characterize the CMP process with respect to material removal rate (RR) and film uniformity as a percentage. The polished material is undensified PSG. PSG is widely used for the plananization in multi-layered metal interconnects. We identify the main effect of DF, BP, and TS on both RR and film uniformity, as expected, by the statistical modeling and analysis on the metrology data acquired from a series of $2^{5-1}$ fractional factorial design with two center points. This revealed the film uniformity of the polished PSG film contains two and three-way interactions. Therefore, one can easily infer that the process control based on better understanding of the process is the key to success in semiconductor manufacturing, typically when the wafer size reaches 300 mm and is continuously scheduled to expand up to 450 mm in or little after 2012.