• Venture DIGEST
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• s.135
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• pp.25-27
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• 2009

2000년부터 김치유산균의 효능을 담은 건강식품 개발에 매진해온 (주)바이오리듬(대표 정용현, www.biorhythm.kr)이 지난해 10월 벤처법인을 설립하여 새로운 출발을 알렸다. 요구르트유산균이 잠식하고 있는 유산균제조시장에 '순식물성 유산균'이라는 차별화 전략으로 도전장을 내만 (주)바이오리듬. 김치유산균의 상품화를 통해 우리의 전통음식 '김치'의 뛰어난 가치를 전 세계에 알리는 첨병역할을 하고 있다.

• Microbiology and Biotechnology Letters
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• v.13 no.3
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• pp.279-283
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• 1985

As a method of breeding L-lysine producing strains, the intergeneric protoplast fusion between Brevibacterium flavum and Corynebacterium glutamicum was performed. As a results, Brevibacterium flavum ATCC 21528 R showed 99％ of protoplast formation and 10％ of regeneration frequencies when treated with 400$\mu\textrm{g}$/$m\ell$ of lysozyme for 12hrs. In Corynebacterium glutamicum ATCC 21514 S, 99％ and 12％ were obtained by treatment of 300$\mu\textrm{g}$/$m\ell$ lysozyme for 12 hrs. In intergeneric protoplast fusion between Brevibacterium flavum ATCC 21528 R and Corynebacterium glutamicum ATCC 21831 S, 1.0$\times$10$^{-6}$ of recombinant frequency per regenerable cells was observed by use of PEG 6000, 30％(w/v). Among the strains obtained KR$_{43}$ strain showed 12％ higher productivity of L-lysine than the parental cell. Then, the activity of aspartokinase of KR$_{43}$ was about 13％ higher than the parental cell.

• Nuclear Engineering and Technology
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• v.51 no.1
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• pp.275-283
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• 2019

Rare isotope beam facilities require shielding data in early stage of their design. There is much less shielding data on neutrons from the reactions between heavy ion beams and matter than the data on neutrons produced by protons. The purpose of the present work is to produce and thus increase the amount of shielding data on neutrons generated by high-energy heavy ion beams based on the RAON in-flight fragment facility. Calculations were performed with the computational Monte Carlo codes PHITS and MCNPX. The secondary neutron source terms were evaluated at 550 MeV/u for Ca, Kr, and Sn and at 400 MeV/u for U ions on a graphite target. Source terms and attenuation lengths were obtained by fitting the ambient dose equivalent inside an ordinary concrete shield.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.20 no.12
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• pp.4044-4052
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• 1996

Planar images of OH and $O_{2}$ with tunable KrF excimer laser which has a) 0.5 $cm^{-1}$ / linewidth, b) 0.5 nm tuning range, c) 150 mJ pulse energy, and d) 20 ns pulse width are obtained to determine spatial distributions of OH and $O_{2}$ in premixed $C_{3}$H$_{8}$ /O$_{2}$ flame. The technique is based on planar laser induced pre-dissociative fluorescence(PLIPF) in which collisional quenching is almost avoided because of the fast pre-dissociation. Dispersed LIPF spectra of OH and $O_{2}$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and $O_{2}$, OH and $O_{2}$ are excited on the P$_{2}$(8) line of the $A^{2}$.SIGMA.$^{+}$(v'= 3)-X$^{2}$.PI.(v'||'||'&'||'||'quot;= 0) band and R(17) line of the Schumann-Runge band B$^{3}$.SIGMA.$_{u}$ $^{[-10]}$ (v'= 0)- X$^{3}$.SIGMA.$_{g}$ $^{[-10]}$ (v'||'||'&'||'||'quot;= 6), respectively. Dispersed OH and $O_{2}$ spectra show an excellent agreement with simulated spectrum and previous works done by other group respectively. It is confirmed that OH widely distributed around flame front area than $O_{2}$.

• Transactions of the Korean Society of Mechanical Engineers B
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• v.24 no.12
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• pp.1580-1587
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• 2000

Rayleigh scattering and laser induced predissociative fluorescence are employed for capturing two-dimensional images of temperature and species concentration in a laminar nonpremixed flame of a diluted hydrogen jet. Rayleigh scattering cross-sections are experimentally obtained ar 248nm. Dispersed LIPF spectra of OH and O$_2$ are also measured in a flame in order to confirm the excitation of single vibronic state of OH and O$_2$ .OH and O$_2$ are excited on the P$_1$(8) line of the A $^2\Sigma ^+(v^`=3) - X^2\pi (V^"=0)$ band and R(17) line of the Schumann-Runge band B $^3\Sigma _u^-(v^`=0) - X ^3\Sigma _g^-(v^"=6)$, respectively. Fluorescence spectra of OH and Hot O$_2$ are captured and two-dimensional images of the hydrogen flame field are successfully visualized.

• JSTS:Journal of Semiconductor Technology and Science
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• v.1 no.1
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• pp.20-30
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• 2001

A 1.8V $650{\;}\textrm{mm}^2$ 4Gb DRAM having $0.10{\;}\mu\textrm{m}^2$ cell size has been successfully developed using 0.11 $\mu\textrm{m}$DRAM technology. Considering manufactur-ability, we have focused on developing patterning technology using KrF lithography that makes $0.11{\;}\mu\textrm{m}$ DRAM technology possible. Furthermore, we developed novel DRAM technologies, which will have strong influence on the future DRAM integration. These are novel oxide gap-filling, W-bit line with stud contact for borderless metal contact, line-type storage node self-aligned contact (SAC), mechanically stable metal-insulator-silicon (MIS) capacitor and CVD Al process for metal inter-connections. In addition, 80 nm array transistor and sub-80 nm memory cell contact are also developed for high functional yield as well as chip performance. Many issues which large sized chip often faces are solved by novel design approaches such as skew minimizing technique, gain control pre-sensing scheme and bit line calibration scheme.

• Journal of Electrical Engineering and Technology
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• v.11 no.2
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• pp.455-462
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• 2016

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10⁻¹⁷ V.cm²). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

• Transactions on Electrical and Electronic Materials
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• v.14 no.2
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• pp.94-100
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• 2013

The elements B, P and As can each be implanted in silicon; for the fabrication of integrated semiconductor devices and the wells in CMOS (complementary metal oxide semiconductor). The implanted range due to different implanted species calculated using TRIM (Transport of Ions in Matter) simulation results was considered. The profiles of implanted samples could be measured using SIMS (secondary ion mass spectrometry). In the comparison between the measured and simulated data, some deviations were shown in the profiles of MeV implanted silicon. The Moliere, C-Kr, and ZBL potentials were used for the range calculations, and the results showed almost no change in the MeV energy region. However, the calculations showed remarkably improved results through the modification of the electronic stopping power. The results also matched very well with SIMS data. The calculated tolerances of $R_p$ and ${\Delta}R_p$ between the modified $S_e$ of TRIM and SIMS data were remarkably better than the tolerances between the TRIM and SIMS data.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2005.05a
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• pp.72-75
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• 2005

In this study Al electrode for OLED was deposited by FTS(Facing Targets Sputtering) system which can deposit thin films with low substrate damage. The Al thin films were deposited on the cell(LiF/EML/HTL/Bottom electrode) as a function of working gas such as Ar, Kr or mixed gas. Also Al thin films were prepared with working gas pressure (1, 6 mTorr ). The film thickness and I-V curve of Al/cell were evaluated by $\alpha$-step and semiconductor parameter (HP4156A) measurement. In the results, when Al thin film were deposited using pure Ar gas, the turn-on voltage of Al/cell was about 11[V]. And the turn-on voltage of Al/cell can be decrease to about 7[V].

• The Plant Pathology Journal
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• v.34 no.1
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• pp.65-70
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• 2018

Co-infection with two virus species was previously reported in some cactus plants. Here, we showed that Notocactus leninghausii f. cristatus can be co-infected with six different viruses: cactus mild mottle virus (CMMoV)-Nl, cactus virus X (CVX)-Nl, pitaya virus X (PiVX)-Nl, rattail cactus necrosis-associated virus (RCNaV)-Nl, schlumbergera virus X (SchVX)-Nl, and zygocactus virus X (ZyVX)-Nl. The coat protein sequences of these viruses were compared with those of previously reported viruses. CMMoV-Nl, CVX-Nl, PiVX-Nl, RCNaV-Nl, SchVX-Nl, and ZyVX-Nl showed the greatest nucleotide sequence homology to CMMoV-Kr (99.8% identity, GenBank accession NC_011803), CVX-Jeju (77.5% identity, GenBank accession LC12841), PiVX-P37 (98.4% identity, GenBank accession NC_024458), RCNaV (99.4% identity, GenBank accession NC_016442), SchVX-K11 (95.7% identity, GenBank accession NC_011659), and ZyVX-B1 (97.9% identity, GenBank accession NC_006059), respectively. This study is the first report of co-infection with six virus species in N. leninghausii f. cristatus in South Korea.