• 한국결정성장학회지
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• 제8권3호
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• pp.396-400
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• 1998

KLN은 성장 결정 내의 $Nb_2O_5$함유량에 따라 물성이 크게 변화하므로 단결정의 조성제어가 매우 중요하다. 본 실험에서는 초기 KLN용액의 $Nb_2O_5$함량을 증가시켜 $Nb_2O_5$함유량이 높은 KLN단결정을 온도요동법과 TSSG법에 의해 성장시키고 성장된 KLN단결정인 $Nb_2O_5$증가량에 따른 격자결함의 유무를 관찰하고자 유전 및 광학 특성을 관찰하다. KLN 단결정 내에 격자결함의 증가에 의해 낮은 에너지로의 단락 frequency 이동과 DPT 특성을 보이는 넓은 Curie 범위가 관찰되었다.

• 한국전기전자재료학회논문지
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• 제14권1호
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• pp.34-42
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• 2001

The influences of substrate temperature were studied when fabricating KLN thin film on amorphous substrate using an rf-magnetron sputtering method. Investigating the vaporization temperature of the each element, the excess ratio of target and the optimum deposition conditions were effectively selected when thin filmizing a material which have elements with large difference fo vaporization temperature. In order to compensate K and Li which have lower vaporization temperatures than Nb, KLN target of composition excess with K of 60% and Li of 30% was used. KLN thin film fabricated on Corning 1737 glass substrate had single KLN phase above 58$0^{\circ}C$ of substrate temperature and crystallized to c-axis direction. The optimum conditions were rf power of 100W, process pressure of 150mTorr, and substrate temperature of $600^{\circ}C$.

• 한국재료학회지
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• 제11권3호
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• pp.178-184
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• 2001

rf-마그네트론 스퍼터링 방법을 이용하여 높은 광투과성을 지니며 c-축 배향된 KLN 박막을 제작하였다. 하소 및 소결 과정을 거쳐서 균일하고 안정한 상태의 KLN 타겟을 제조하였다. KLN 타겟은 화학량론적인 조성 및 K가 30%, 60%, 그리고 Li가 각각 15%, 30% 과량된 조성을 사용하였으며 K와 Li의 휘발을 방지하기 위하여 낮은 온도에서 소결시켰다. 제조된 타겟을 사용하여 rf-magnetron sputtering 방법으로 박막을 제조하였으며, 이때 K가 60% Li가 30% 과량된 타겟으로 제조할 때 단일상의 KLN 박막을 얻을 수 있었다. KLN 박막은 코닝 1737 기판 위에서 우수한 결정성과 높은 c-축 배향성을 나타내었으며, 이때 박막의 성장조건은 고주파 전력 100 W, 공정 압력 150 mTorr, 기판 온도 58$0^{\circ}C$였다. 가시광 영역에서 박막의 투과율은 약 90% 이고, 흡수는 333 nm에서 발생하였으며 632.8 nm에서 박막의 굴절율은 1.93이었다.

• 한국세라믹학회지
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• 제37권8호
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• pp.731-738
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• 2000

KLN(K3Li2Nb5O15) has attracted a great deal of attention for their potential usefulness in piezoelectric, electro-optic, nonlinear optic, and pyroelectirc devices. Especially, the KLN single crystal has been studied in the field of optics and electronics. However it is hard to produce good quality single crystals due to the crack propagation during crystal growing. One of the solutions of this problem is prepartion of thin film. But the intensive study has not been conducted so far. In this study, after the KLN thin film were prepared by R.F. magnetron Sputtering method on SiO2/Si substrate, the post-annealing methods of RTA(rapid thermal annealin) and IPA(insitu post annealing) were employed. The deposition condition of KLN thin film was RF power(100 W), Working pressure(100 mtorr). The commonness of both RAT and IPA was that the higher were deposition and post annealing temperature, the higher was the intensity of XRD but the less surface roughness. The difference of post-annealing methods affected XRD phase and surface condition very much. And in IPA process, the influence of O2 had much effect on the formation of KLN phase.

• 한국결정성장학회지
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• 제4권4호
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• pp.405-410
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• 1994

$\mu\textrm{m}$-PD법에 의해 융액 조성을 변화시키면서 KLN결정을 육성하였다. 육성된 결정은 DTA 측정 및 X.선 회절법에 의해 조성을 변화를 측정하였다. 이 결과로부터 $\mu\textrm{m}$-PD KLN 단결정은 육성축 방향에 따라 균일한 조성을 갖음을 알 수 있었으며, 이는 고액계면에서의 대류제의 효과에 기인된다고 사료된다.

• 한국전기전자재료학회논문지
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• 제14권5호
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• pp.410-416
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• 2001

KLN thin films were fabricated on Pt coated Si(100) wafer using an rf-magnetron sputtering method. The grown KLN thin film consists of 4-fold grains. In this experiment, the structure of 4-fold grained thin film was investigated using XRD and SEM measurements. Pt layer was also deposited using the rf-magnetron sputtering method,. XRD measurement showed that he Pt thin film has Gaussian distribution form with strong (111) direction orientation. The KLN thin film has preferred-orientation of (001) direction, and the peak consists of 2 separate peaks; one with broad FWHM and the other with narrow FWHM. The sharp peak is due to single crystal, and combining with Em results, the 4-fold grain consists of singel crystals with c-axis normal to substrate.

• 한국결정성장학회지
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• 제5권2호
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• pp.94-99
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• 1995

${\mu}-PD KLN$법에 의해 육성한 KLN 단결정은 적색 레이저를 이용한 제2 고조파 발생(SHG) 특성 평가에 의해 noncritical phase-matching(NCPM)의 파장의 균일성과 우수한 온도 특성을 갖고 있음을 확인하였다. 또한 융액의 조성을 변화시키면서 성장된 결정의 NCPM 파장 측정에 의해 조성과 SHG 특성 사이에는 민감한 상호관계가 있음을 알 수 있었다. 이로부터 원료의 조성제어를 통한 ${\mu}-PD KLN$은 청색에서 녹색파장을 걸치는 넓은 범위에서의 선택적인 SHG 응용이 기대된다.

• 한국결정성장학회:학술대회논문집
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• 한국결정성장학회 1999년도 PROCEEDINGS OF 99 INTERNATIONAL CONFERENCE OF THE KACG AND 6TH KOREA·JAPAN EMG SYMPOSIUM (ELECTRONIC MATERIALS GROWTH SYMPOSIUM), HANYANG UNIVERSITY, SEOUL, 06월 09일 JUNE 1999
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• pp.167-185
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• 1999

In the present paper, KLN crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-melt interfaces. The crystal compositions were determined by chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements, respectively. The blue SHG characteristics of a KLN sample were also investigated using a pulsed dye laser. PACS: 42.70.M;81.10;81.10A;42.65.K.

• 한국결정성장학회지
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• 제9권4호
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• pp.396-401
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• 1999

In the present paper, potassium lithium niobate(KLN) crystals have been grown along <001>, <100> and <110> directions by the top seeded solution growth (TSSG) method from Li-richer melts with different compositions. The morphologies of KLN crystals grown along different directions have been studied, and the well-developed facets have been unambiguously indexed using X-ray goniometer and stereographic projection analysis. The growth mechanism and defects such as cracks and inclusions were discussed on the basis of observations of facets on the crystal-solution interfaces. The crystal compositions were determined by a chemical analysis method. The structure and lattice constants of KLN crystals were determined and calculated on the basis of XRD data by using TREOR90 and PIRUM programs. The Curie temperature and optical absorption were determined by dielectric constant peak and spectrum measurements. respectively. The blue second harmonic generation (SHG) characteristics of KLN sample were also investigated using a pulsed dye laser.

• 한국결정성장학회지
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• 제5권1호
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• pp.19-24
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• 1995

대형 단결정 육성을 위해 TSSG 법에 의해 결정성장을 시도, $8{\times}6{\times}2 mm^3$ 크기의 KLN 결정을 육성하였다. 육성된 결정으로 부터 제2고주파 발생영역에서의 이상광 굴절률 $n_e$는 조성에 따라 변화하며, 조성중의 Li량이 많을수록 감소함을 알았다. 또한 광투과 특성평가에 의해 자외영역으로 부터 적외영역에 걸쳐 광이 투과함을 관측하였으며, 자의영역에서의 투과 한도는 350nm, cut-off파장은 380nm임이 확인되었다.