• Proceedings of the Materials Research Society of Korea Conference
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• 1997.10a
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• pp.59-59
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• 1997

• Proceedings of the Korean Magnestics Society Conference
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• 2001.10a
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• pp.72-73
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• 2001

• Proceedings of the Korean Magnestics Society Conference
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• 1999.10a
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• pp.114-115
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• 1999

• Proceedings of the Korean Magnestics Society Conference
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• 2005.06a
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• pp.100-101
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• 2005

• Proceedings of the Korean Society of Soil and Groundwater Environment Conference
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• 2000.11a
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• pp.69-73
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• 2000

We systematically analyze the influence of fracture junction, solute transfer characteristics on transport patterns in discrete, two-dimensional fracture network models. Regular lattices and random fracture networks with power-law length distributions are considered in conjunction with particle tracking methods. Solute transfer probabilities at fracture junctions are determined from analytical considerations and from simple complete mixing and streamline routing models. For regular fracture networks, mixing conditions at fracture junctions are always dominated by either complete mixing or streamline routing end member cases. Moreover bulk transport properties such as the spreading and the dilution of solute are highly sensitive to the mixing rule. However in power-law length networks there is no significant difference in bulk transport properties, as calculated by assuming either of the two extreme mixing rules. This apparent discrepancy between the effects of mixing properties at fracture junctions in regular and random fracture networks is explained by the statistics of the coordination number and of the flow conditions at fracture intersections. We suggest that the influence of mixing rules on bulk solute transport could be important in systematic orthogonal fracture networks but insignificant in random networks.

• Korean Journal of Materials Research
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• v.6 no.7
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• pp.678-683
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• 1996

In the fabrication processes of thin film thermoelectrics, a subsequent annealing treatment is inevitable to reduce the defects and residual stresses introduced during the film growth, and to make the uniform carrier concentration of the film. However, the diffusion-induced atomic redistribution and the broadening of p/n junction region are expected to affect the thermoelectric properties of thin film modules. The present study intends to investigate the diffusion at the p/n junctions of thermoelectric thin films and to relate it to the property changes. The film junctions of p-type(Bi0.5Sb1.5Te3)and n-type(Bi2Te2.4Se0.6)were prepared by the flash evaporation method. Aluminum thin layer was employed as a diffusion barrier between p-and n-type films of the junction. This was found to be an effective barrier by showing a negligible diffusion into both type films. After annealing treatment, the thermoelectric properties of p/n couples with aluminum barrier layer were accordingly retained their properties without any deterioration.

• Journal of Magnetics
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• v.8 no.1
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• pp.24-31
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• 2003

The discoveries of antiferromagnetic coupling in Fe/Cr multilayers by Grunberg, the Giant Magneto Resistance by Fert and Grunberg and a large tunneling magnetoresistance at room temperature by Moodera have triggered enormous research on magnetic thin films and magnetoelectronic devices. Large opportunities are especially opened by the spin dependent tunneling resistance, where a strong dependence of the tunneling current on an external magnetic field can be found. We will briefly address important basic properties of these junctions like thermal, magnetic and dielectric stability and discuss scaling issues down to junction sizes below 0.01 $\mu\textrm{m}$$^2$with respect to single domain behavior, switching properties and edge coupling effects. The second part will give an overview on applications beyond the use of the tunneling elements as storage cells in MRAMs. This concerns mainly field programmable logic circuits, where we demonstrate the clocked operation of a programmed AND gate. The second 'unconventional' feature is the use as sensing elements in DNA or protein biochips, where molecules marked magnetically with commercial beads can be detected via the dipole stray field in a highly sensitive and relatively simple way.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.185-188
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• 1999

Biepitaxial Y$_1Ba_2Cu_3O_{7-x}$ (YBCO) and La$_{0.2}Sr_{0.8}MnO_3$ (LSMO) thin films have been prepared on SrTiO$_3$ buffer layer and MgO seed layer grown on Al$_2O_3$(11${\bar{2}}$0)substrates by dc-sputtering with hollow cylindrical targets, respectively. We charaterized Josephson properties and significantly large magnetoresistance in YBCO and LSMO films with 45$^{\circ}$ grain boundary junction, respectively. The observed working voltage (I$_cR_n$) at 77 K in grain boundary junction was below 10${\mu}$V, which is typical I$_cR_n$ value of single biepitaxial Josephson junction. The field magnetoresistance ratio (MR) of LSMO grain boundary juncoon at 77K was enhanced to 13%, which it was significant MR value with high magnetic field sensitivity at a low field of 250 Oe. These results indicate that inserting the insulating layer instead of the grain boundary layer with metallic phase can be possible to apply a new SIS Josephson junction and a novel magnetic device using spin-polarized tunneling junction.

• Progress in Superconductivity
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• v.4 no.2
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• pp.104-108
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• 2003

We have measured the transport properties of $Bi_2$$Sr_2$$CaCu_2$$O_{8+d}$ (BSCCO) intrinsic Josephson junction mesa. Transport measurements with current flow along the c-axis, perpendicular to the layer of mesa showed multi-branch structures on the current-voltage characteristics. For single intrinsic junctions, the microwave radiation appears in the form of three different modes of oscillations, which include Josephson emission, nonequilibrium broad emission and sharp coherent microwave emission. Mutual phase interactions between two-mesas structures of BSCCO intrinsic Josephson junctions were studied. The results were explained within the framework of the Josephson plasma excitation model due to quasiparticle injection.n.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2006.11a
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• pp.133-134
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• 2006

A simple doping method to fabricate a very thin channel body of the n-type fin field-effect-transistor (FinFET) with a 20 nm gate length by solid-phase-diffusion (SPD) process is presented. Using As-doped spin-on-glass as a diffusion source of arsenic and the rapid thermal annealing, the n-type source-drain extensions with a three-dimensional structure of the FinFET devices were doped. The junction properties of arsenic doped regions were investigated by using the $n^+$-p junction diodes which showed excellent electrical characteristics. Single channel and multi-channel n-type FinFET devices with a gate length of 20-100 nm was fabricated by As-SPD and revealed superior device scalability.