• Proceedings of the KIEE Conference
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• 2002.06a
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• pp.49-51
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• 2002

In this thesis, Josephson junction using high-Tc superconducting multi-layer thin film has been fabricated by on-axis RF magnetron sputtering method. And, the characterizations were performed by X-ray diffraction, SEM and the measuring system of critical current density. The physical properties of multi-layer superconducting thin films were also analyzed with the measured results. To fabricate the multi-layer superconducting thin films, the optimum partial pressure of Argon and Oxgen and the temperature of substrate were measured. Also, YBaCuO thin film was grown on MgO and $SrTiO_3$ substrates by rf-sputtering and LGO thin film of 30 A was epitaxially grown on the YBaCuO thin film as a josephson junction with the same condition. The schottky barrier at the contact surface between YBaCuO/LGO and YBaCuO/Au and the energy gap of 0.5 ${\sim}$ 0.6 mV in Nb were observed from the dI/dV-V of YBaCuO/LGO/Au/Nb and YBaCuO/Au/Nb.

• Journal of the Korean Institute of Illuminating and Electrical Installation Engineers
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• v.28 no.7
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• pp.19-25
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• 2014

In the LED lighting applications, because LED packages are the origin of heat generation, there are thermal design problem on heat sinks. In the thermal design, it is important to consider the total volume and the total weight of heat sink simultaneously. In this study, an Al 6063 heat sink was optimized using Computational Fluid Dynamics(CFD) simulation tool for the cooling of 30W LED module, and then the cooling performance and the total weight of heat sinks with Al 6063 and Thermal Conductive Polycarbonate(TCP) were compared under the same conditions. As the result of simulation, an Al 6063 heat sink was optimized with 22 ea. of fins and 1.6 mm of fin thickness. LED Junction Temperature of the TCP Heat Sink was $5.6^{\circ}C$ higher, but total weight of it was 47 % less than the Al 6063.

• Korean Journal of Materials Research
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• v.3 no.6
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• pp.661-667
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• 1993

Effects of $SiH_4//WF_6$(=R) ratio on the electrical properties of W films such as resistvity, contact resistance, junction leakage current in the selective W CVD technology for contact barrier metal were investigated with the emphasis on the role of $\alpha$-W Resistivity of W increases with increasing R, which is primarily due to the phase transformation from $\alpha$-W to , $\alpha$-W. $\alpha$-W found in the SiH4 reduced CVD W film is stabilized by Si incorporated into the W film rather than by oxygen. $\alpha$-W is found in the W film deposited on the Si substrate for high R, while $\alpha$-W is not found in the W film deposited on the TiN substrate even for high R. Also junction leakages increase with increasing R, which is caused not only by the vertical Si consumption but also the lateral Si consumption.

• Asian Pacific Journal of Cancer Prevention
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• v.15 no.6
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• pp.2739-2745
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• 2014

Background: Health-related quality of life (HRQL) is a fundamental outcome in oncology patients and quality of life (QOL) assessment requires clinically relevant questionnaires. The purpose of this study was translation and definition of measurement properties and the clinical validity of Quality of Life Questionnaire (QLQ)-OG25 module in Persian patients with oesophagus, oesophagogastric junction (OGJ) or gastric cancers. Materials and Methods: The translation procedure followed European Organization for Research and Treatment of Cancer (EORTC) guidelines. Both EORTC QLQ-OG25 and a core questionnaire (EORTC QLQ-C30) were administered to patients with oesophagus (150), OG junction (93) and gastric (32) cancer undergoing multi-modal treatments. Convergent and discriminant validity, Cronbach's alpha coefficient and known-groups comparisons were used to examine reliability and validity. Results: In all, 275 patients (mean age 62 years) completed both questionnaires. Compliance rate was high and the questionnaire module was well accepted. We found good reliability for multi-item subscales of QLQ-OG25 (Cronbach's alpha coefficients 0.76-0.89). About 73% had TNM staging and scales distinguished between clinically distinct groups of patients. However, patients in palliative group experienced compromised functional status and worse treatment-associated symptoms than those in the potentially curative group. Test-retest scores were consistent. Multi-trait scaling analysis demonstrated good convergent and discriminant validity. Conclusions: Overall, the Persian version of QLQ-OG25 demonstrated psychometric and clinical validity that supports its application as a supplement to the original tool (EORTC QLQ-C30) when assessing HRQL in patients with upper-gastrointestinal (GI) cancer both in curative and palliative phases.

• Journal of the Korean Magnetics Society
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• v.21 no.2
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• pp.52-55
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• 2011

Spin-transfer torque is a useful tool to control the magnetic state in nanostructures. In magnetic tunnel junctions, the spin-transfer torque has two components, the in-plane spin torque and the perpendicular spin torque. While properties of the in-plane spin-transfer torque are relatively well understood, properties of the perpendicular spin-transfer torque still remain controversial. A recent experiment demonstrated that in asymmetric magnetic tunnel junctions, the bias voltage dependence of the perpendicular spin-transfer torque contains both linear and quadratic terms in the bias. However it still remains unexplored how the bias voltage dependence changes as a function of material parameters. In this paper, we systematically investigate the perpendicular spin-transfer torque in asymmetric magnetic tunnel junction by varying spin splitting energy, work function difference, and Fermi energy of the ferromagnetic metal leads.

• Journal of the Korean Magnetics Society
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• v.19 no.3
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• pp.94-99
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• 2009

We have studied the effects of oxygen partial pressure change on the physical properties of the $La_{0.7}Ca_{0.3}MnO_3$ thin films grown by Pulsed laser Deposition. Contrary to the previous reports, thin films of high curie temperature were successfully synthesized at very low oxygen partial pressure ($1.0{\times}10^{-5}$, $1.0{\times}10^{-6}Torr$). These observations indicate that the shape of plasma plume and the kinetic energy of the ablated species in it play an important role in determining the quality of samples. We also fabricated p-n heterojunction of $La_{0.7}Ca_{0.3}MnO_3$ and Nb-doped $SrTiO_3$. The current-voltage curves show rectifying behavior and, furthermore, the current responses to the applied magnetic field, indicating a potential possibility of device applications.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1700-1702
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• 2004

Diamond films including nanocrystallites are grown by microwave plasma chemical vapor deposition using $O_2$ additives and negative substrate bias at growth step. Effects of growth parameters on film properties are characterized by Raman spectra, SEM, and AFM images. It is found that the surface roughness and the microstructure of grown films can be controlled by changing $O_2$ gas ratio. The I-V characteristics are also investigated in terms of growth conditions of diamond films. The surface roughness and the $sp^2$ phase of the grown diamond films turn out to be crucial factors for reducing leakage currents at diamond/metal interfaces.

• Proceedings of the Korean Vacuum Society Conference
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• 2015.08a
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• pp.243.2-243.2
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• 2015

We report a high-performing nanoscale NiO thin film grown by thermal oxidation of sputtered Ni film. The structural, physical, optical and electrical properties of nanoscale NiO were comprehensively investigated. A quality transparent heterojunction (NiO/ZnO) was formed by large-area applicable sputtering deposition method that has an extremely low saturation current of 0.1 nA. Considerable large rectification ratio of more than 1000 was obtained for transparent heterojunction device. Mott-Schottky analyses were applied to develop the interface of NiO and ZnO by establishing energy diagrams. Nanoscale NiO has the accepter carrier concentration of the order of 1018 cm-3. Nanoscale NiO Schottky junction device properties were comprehensively studied using room temperature impedance spectroscopy.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05b
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• pp.24-26
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• 2002

In this paper, we discuss the electrical properties of self-assembled (2'-amino-4,4-di(ethynylphenyl)-5'-nitro-l-(thioacetyl)benzene), which has been well known as a conducting molecule having possible application to molecular level NDR device. The phenomenon of negative differential resistance (NDR) is characterized by decreasing current through a junction at increasing voltage. also fabrication of MIM-type molecular electronic and the Molecular Level Using Scanning Tunneling Microscopy

• Proceedings of the IEEK Conference
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• 1998.10a
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• pp.565-568
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• 1998

The effects of denudation anneals on the properties of 256Mega-bit level devices were investigated. Based on the three-step anneal model, the redistribution of oxygen atom and the defect free zone depth were calculated. A significant outdiffusion of oxygen atoms is occurred during the denudation anneals at high temperature. Junction leakage current of P+/N-Well and N+/P-Well junctions, as a function of denudation anneal temperature, was decreased with increase of anneal temperature and is closely related with the behaviors of oxygen atoms. Also it is found that the denudation anneal at high temperature very effective for the fabrication of reliable 256Mega-bit level devices.