• Proceedings of the Korean Vacuum Society Conference
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• 2013.02a
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• pp.415-415
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• 2013

We have investigated the optical and electrical properties of the CIGS thin film solar cells by the electroreflectance (ER), photoreflectance (PR), photoluminescence (PL), and photocurrent (PC) spectroscopies at room temperature. The ER spectrum had two narrow signal regions and one broad signal region. We measured PL and PC to confirm the signals at low energy region (1.02~1.35 eV), so these signals are related to the CIGS thin film, and the high energy region (2.10~2.52 eV) is related to the CdS bandgap energy. The broad signal region (1.35~2.09 eV) is due to the internal electric field by the p-n junction from the comparison between PR and ER spectra, and we calculated the internal electric field by the p-n junction. In the high efficiency solar cell, the CdS signal of ER spectrum is narrower than the lower efficiency solar cells.

• 한국초전도학회:학술대회논문집
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• v.9
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• pp.87-90
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• 1999

We have studied the annealing effects of 570 (SrTiO$_3$) single crystal substrate and the I-V properties of step-edge junctions after Ar ion milling. YBa$_2Cu_3O_7$ (YBCO) thin films are fabricated on the substrates by using pulsed laser deposition (PLD) and photolithography. The surface of Ar ion milled substrate was characterized with atomic force microscope (AFM) and scanning electron microscope (SEM) images. After the substrate was damaged by milling, the critical current density of YBCO thin films deposited on the substrate was lowered. The annealing of the damaged substrate at about 1000 $^{\circ}C$ recovered the critical current density to that before the milling. Futhermore the annealing helped junction formation due to high quality film and increased the yield rate for the fabrication of high quality step-edge junction.

• Progress in Superconductivity and Cryogenics
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• v.18 no.4
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• pp.5-8
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• 2016

We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ${\sim}6{\mu}A$ at T = 2.3 K and the supercurrent persists even at T = 4.7 K. Magnetic field dependence of the critical current is consistent with a theoretical fit using the narrow junction model. The superconducting quantum interference device (SQUID) was also fabricated using two PbIn-Au-PbIn junctions connected in parallel. Under perpendicular magnetic field, we clearly observed periodic oscillations of dV/dI with a period of magnetic flux quantum threading into the supercurrent loop of the SQUID. Our fabrication methods would provide an easy and simple way to explore the superconducting proximity effects without ultra-low-temperature cryostats.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.146-150
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• 2000

Two methods have been investigated to fabricate good quality step-edge Josephson junctions on STO, MgO, and LAO single crystal substrates. One is the annealing of substrates at 1050$^{\circ}$C in 1 atmospheric oxygen after Ar-ion milling. The other is the cleaning of step-edge by using Ar ion milling. The step-edge is characterized with atomic force microscope (AFM) images. And YBCO thin films are deposited by using pulsed laser. The I-V properties of step-edge junctions are characterized. The yield rate of step-edge junction is increased by new fabrication methods.

• 한국초전도학회:학술대회논문집
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• v.10
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• pp.293-297
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• 2000

Multiseeding with (100)/(100) grain junctions of top-seeded melt growth (TSMG) processed YBCO superconductors was studied. The effect of the number of seeds and the distance between two seeds on the levitation forces and the trapped magnetic fields of the TSMG-processed YBCO samples was investigated. Multiple seeding shortened the processing time for the fabrication of TSMC-processed YBCO superconductors. The large magnetic field was trapped at the grain junction when two seeds was placed without spacing, while the amount of the magnetic field decreased when the seed distance increased. This is attributed to the increased amount of the residual melt phases around the grain junctions.

• Journal of the Korean Ceramic Society
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• v.50 no.3
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• pp.173-179
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• 2013

Wurtzite nanomaterials, such as ZnO, GaN, and InN, have become a subject of great scientific and technological interest as they simultaneously have piezoelectric and semiconductor properties. In particular, the piezoelectric potential (piezopotential) created by dynamic straining in the nanowires drives a transient flow of current in the external load, converting mechanical energy into electricity. Further, the piezopotential can be used to control the carrier generation, transport, separation, and/or recombination at the metal-semiconductor junction or p-n junction, which is called the piezophototronic effect. This paper reviews the recent advances on the piezophototronic effect to better use the piezophototronic effect to control the carrier generation, transport, separation and/or recombination for improving the performance of optoelectronic devices, such as photon detectors, solar cells and LEDs. This paper also discusses several research and design studies that have improved the output performance of optoelectronic devices.

• Proceedings of the KIEE Conference
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• 2002.07c
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• pp.1587-1589
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• 2002

Photovoltaics is considered as one of the most promising new energy technology, because its energy source is omni present, pollution-free and inexhaustive. It is agreed that these solar cells must be thin film type because thin film process is cost-efficive in the fact that it uses much less raw materials and can be continuous. The defect chalcopyrite material $CuIn_3Se_5$ has been identified as playing an essential role in efficient photovoltaic action in $CuInSe_2$-based devicesm It has been reported to be of n-type conductivity, forming a p-n junction with its p-type counterpart CuInSe2. Because the most efficient cells consist of the $Cu(In,Ga)Se_2$ quarternary, knowledge of some physical properties of the Ga-containing defect chalcopyrite $Cu(In,Ga)_3Se_5$ may help us better understand the junction phenomena in such devices.

• Proceeding of EDISON Challenge
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• 2017.03a
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• pp.499-505
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• 2017

Photoisomerizing molecules which can transform their structure by the light irradiation have great deal for the application of photo-switching devices. And azobenzene is the representive type of the photoisomerizing molecules. It can transform their trans- structures into cis- structure as the light for certain wave lengths they receive. This property shows the potential of ON/OFF switching functionalization which can be used into the nano scale photo switch. Furthermore, many studies are interested in the organic linkers that connect the azobenzene and metal electrodes. We used S, $CH_2S$, $(CH_2)_4S$ as the linker to watch the influence of linkers for electronic properties. So We suggest a photoswitching device based on the vertical junction using the first-principles calculations with density functional theory and non-equilibrium Greens function (NEGF). By analyzing the electronic structure and tunneling current caused by the structural difference of the system between cis- and trans- azobenzene, the difference in switching mechanism, ON/OFF ratio and transmission will be watched as the linker changes. And finally We will suggest which linker would be the better for the optimal device architecture which can achieve high control of the ON/OFF photocurrent ratio. This result will show the potential of azobenzene-based photoswitch and provide the critical insight in constructing the optimal device architecture.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.8
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• pp.688-693
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• 2001

A series of Fe/CeO$_2$/Fe$_{75}$Co$_{25}$ tunnel junctions (Magnetic Tunnel Junction, MTJ) having CeO$_2$ barrier layers from 30 to 90$\AA$ in thickness were prepared by ion beam sputtering (IBS) method. In order to compare the properties of MTJs, Fe/Al oxide/Fe-Co tunnel junctions were also prepared. Some junctions with a CeO$_2$ barrier layer showed the ferromagnetic tunneling effect and the highest MR ratio at room temperature was 5%. The electric resistance of junctions with a CeO$_2$ barrier layer was higher that that of junctions with an Al oxide barrier. On the other hand, The interface analysis of the Fe/CeO$_2$ bilayer was conducted by means of X-ray photoelectron spectroscopy (XPS). It was found that CeO$_2$ was decomposed to Ce and $O_2$ during sputtering, and Fe was oxidized with these decomposed $O_2$ molecules. The reduction of both electric resistance and MR ratio may be associated with the decomposed Ce in the barrier layer.r.r.

• Korean Journal of Materials Research
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• v.8 no.5
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• pp.470-473
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• 1998

$As^+$ was ion-implanted onto $CoSi_{2}$ thin films formed by rapidly thermal-annealed Co/Ti bilayers. Then the specimens were drive-in annealed at 500~100$0^{\circ}C$ to form ultra-shallow $n^+$p junction diodes and to measure their 1- V characteristics. When drive-in annealed at 50$0^{\circ}C$ for 280 sec., 50 nm thick ultra-shallow junctions were formed and di¬odes showed the best 1- V characteristics with low leakage current. In particular. the leakage current was 2 orders lower than that of diodes formed by using Co monolayer. It was attributed to uniform $CoSi_{2}$/Si interfaces.