• Journal of Life Science
• /
• v.18 no.6
• /
• pp.764-769
• /
• 2008

Mutations in the human connexin 32 (Cx32) gene are responsible for X-linked Charcot-Marie-Tooth (CMTX) disease. Although over 300 different mutations have been identified the detailed molecular etiology of CMTX disease is poorly understood. Several studies reported that connexin membrane channels share most biophysical properties with their parental gap junction channels. In this study, two connexin mutant membrane channels (one mutant channel called the M34T channel in which the methionine residue at the $34^{th}$ position of the Cx32 protein is replaced with threonine residue and the other mutant channel called the T86C channel in which the threonine residue at the $86^{th}$ position is replaced with cysteine residue) associated with CMTX mutations were characterized at the single-channel level instead of using mutant gap junction channels. The biophysical properties of the M34T channel were very similar to those of the gap junction channel formed by M34T mutation. In addition, the mutant membrane channel study revealed the reversal of the gating polarity, the loss of fast gating and the gain of slow gating. The T86C channel also behaves like its parental wild type Cx32 membrane channel. Taken together, these results suggest that a study using connexin membrane channels is useful to characterize CMTX mutants.

• The Transactions of The Korean Institute of Electrical Engineers
• /
• v.60 no.6
• /
• pp.1178-1182
• /
• 2011

The best methods for distribution controled of LED lighting fixtures is control to designed LED chip array, lens and reflector. However, lens design need distribution design to reflector for low-wattage LED lighting because of difficulty of production and reduction of light efficiency. In addition, it needs maximize of thermal performance to improve the efficiency and reliability of device. As a result, for the height of reflector 40[mm] and Inclination 25[$^{\circ}$], we can see the best distribution properties, and, in the thermal properties, junction temperature MCPCB 62.9 [$^{\circ}C$], FR4 PCB 89.6 [$^{\circ}C$], FR4 PCB from Via-hole is 63.1 [$^{\circ}C$]. it may improve for thermal properties for makes the Via-hole.

• Journal of Magnetics
• /
• v.1 no.2
• /
• pp.82-85
• /
• 1996

Magnetic properties and microstructures of melt spun misch metal-ferroboron alloys were investigated. The major phase is the tetragonal (rare earth)$_2Fe_{14}B$ phase. Magnetic properties showed coercivity of 5.6 kOe, remanence of 7.85 kG, and so energy product 8.9 MGOe. Microsturctures in optimum properties showed that matrix was composed of Ce-rich phase while second phase La-rich-oxygen phase with less amount of Fe element than matrix, and triple junction with La-rich phase contrary to matrix.

• Journal of the Korean Society of Radiology
• /
• v.3 no.1
• /
• pp.11-15
• /
• 2009

In this study, the basic research verifying possibility of applications as radiology image sensor in Digital Radiography was performed, the radiology image sensor was fabricated using a multi-layer technique to decrease dark current. High efficiency materials in substitution for Amorphous Selenium(a-Se) have been studied as a direct method of imaging detector in Digital Radiography to decrease dark current by using PN junction or Hetero junction already used as solar cell, semiconductor. Particle-In -Binder method is used to fabricate radiology image sensor because it has a lot of advantages such as fabrication convenient, high yield, suitability for large area sensor. But high leakage current is one of main problem in Particle-In -Binder method. To make up for the weak points, multi-layer technique is used, and it is considered that high efficient digital radiation sensor can be fabricated with easy and convenient process. In this study, electrical properties such as leakage current, sensitivity, signal linearity is measured to evaluate multi-layer radiation sensor material.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1997.04a
• /
• pp.217-221
• /
• 1997

We have investigated the ferroelectric properties of multi-layered SrBi$_2$Ta$_2$$O_{9}$Pb(Zr,Ti)O$_3$, SBT/PZT, thin film capacitors. Specimens were prepared onto Pt-coated Si wafer by sol-gel method. Ferroelectric properties of these finns could be obtained only for thin SBT layers below 50nm in thickness. The values of dielectric constant and remnant polarization depend mainly on the thickness of SBT layer, which arises from the paraelectric interface layer between SBT and PZT due to the thermal diffusion of Pb. The value of remnant poarization of PZT/SBT is greater than that of SBT, and the plarization fatigue behaviors of PZT/SBT/Pt capacitors are somewhat improved as compared with those of PZT/Pt.t.

• Journal of information and communication convergence engineering
• /
• v.16 no.4
• /
• pp.248-251
• /
• 2018

To research the characteristics of $TiO_2$ as an insulator, $TiO_2$ films were prepared with various annealing temperatures. It was researched the currents of $TiO_2$ films with Schottky barriers in accordance with the contact's properties. The potential barrier depends on the Schottky barrier and the current decreases with increasing the potential barrier of $TiO_2$ thin film. The current of $TiO_2$ film annealed at $110^{\circ}C$ was the lowest and the carrier density was decreased and the resistivity was increased with increasing the hall mobility. The Schottky contact is an important factor to become semiconductor device, the potential barrier is proportional to the hall mobility, and the hall mobility increased with increasing the potential barrier and became more insulator properties. The reason of having the high mobility in the thin films in spite of the lowest carrier concentration is that the conduction mechanism in the thin films is due to the band-to-band tunneling phenomenon of electrons.

• Proceedings of the Korean Magnestics Society Conference
• /
• 2007.05a
• /
• pp.269.1-269.1
• /
• 2007

• Proceedings of the Materials Research Society of Korea Conference
• /
• 1999.11a
• /
• pp.30-30
• /
• 1999

No Abstract.see full/text

• Proceedings of the IEEK Conference
• /
• 1998.10a
• /
• pp.533-536
• /
• 1998

The electrical characteristics of NMOSFETs with asymmetrical source/drain regions have been expermentally investigated using test devices fabricated by $0.35\mu\textrm{m}$ CMOS technology. The performance degradation for asymmetric transistor and its causes are analyzed. The parasitic resistances, such as series resistance of active regions and silicide junction contact resistance, are distributed in parallel along the channel. Depending on source/drain geometry, the array of those resistances is changed, that results the various electrical properties.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2009.02a
• /
• pp.173.1-173.1
• /
• 2009