• Journal of Korean Library and Information Science Society
• /
• v.40 no.2
• /
• pp.111-138
• /
• 2009

The Joint Steering Committee represented final draft of RDA that can be replaced for AACR3 on November third in 2008. RDA is aiming at standard of international cataloging rules fo the purpose of providing the bibliographic description and the access point of all media, and when it will be realized, KCR4 4th edtion have to revised to following up it. This study analyzes both cataloging rules of RDA and KCR4 in each area of KCR 4th edition. As a result, it present the points to take into consideration as revising KCR4.

• 한국태양에너지학회:학술대회논문집
• /
• 2009.04a
• /
• pp.220-224
• /
• 2009

The effect of addition of single and binary additives on the performance of dye-sensitized $TiO_2$ solar cells based on 1,2-dimethyl-3-propylimidazolium iodide (DMPII) in ethylene carbonate (EC) and gamma-butyrolactone (GBL) has been evaluated at different cell temperatures in the $30-120^{\circ}C$ range. The electrolyte containing a single additive, 2-(dimethylamino)-pyridine (DMAP) showed best performance, which showed further enhancement for an electrolyte containing binary additives, DMAP and 5-chloro-1-ethyl-2-methylimidazole (CEMI) in equal molar ratio. The performance of the dye sensitized solar cell (DSC) based on electrolyte containing binary additives were found to be better than an acetonitrile based electrolyte. The dependence of different photovoltaic parameters (Voc, Jsc, ff, n) of the DSC upon temperature has been studied over the $30-120^{\circ}C$ range and only a small decrease in conversion efficiency has been observed. Thus the electrolyte containing binary additives (DMAP, CEMI) in EC/GBL solvent and show better performance in the investigated temperature range ($30-120^{\circ}C$).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2002.07a
• /
• pp.383-386
• /
• 2002

Polycrystalline Cu(In,Ga)Se$_2$(CIGS) thin-films were grown by co-evaporation on a soda lime glass substrate. In this paper the effects of the Se evaporation temperature on the properties of CuIn0.75Ga0.25Se2 (CIGS) thin films. Structure, surface morphology and optical properties of CIGS thin films deposited at various Se evaporation temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher Se evaporation temperatures the films displayed a lower degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously. These results were supported by experimental work using scanning electron microscopy When the Se evaporation temperature was increased, the average grain size also decreased together with a reduction Cu content. The Se evaporation temperature also had a significant inf1uence on the transmission spectra. Increasing the Se evaporation temperature, the cell efficiency was improved dramatically to 11.75% with Voc = 556 mV, Jsc = 32.17 mA/cm2 and FF = 0.66. The Se evaporation temperature is an important parameter in thin film deposition regardless of the deposition technique being used to deposit thin films

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2004.11a
• /
• pp.687-690
• /
• 2004

Fabrication and characterization of dye-sensitized TiO2 solar cells(DSSC) consisting of spray-coated TiO2 electrode, an electrolyte containing I-/I3- redox couple, and a Pt-coated counter electrode carried out, using mainly FE-SEM and solar simulator. Also, effect of rapid thermal annealing(RTA) temperatue on I-V curves of DSSCS consisting of approximately 10m thickness and $5{\times}5mm2$ active area. No significant difference in the apparent size of TiO2 clusters was observed with increasing RTA temperature. Also, an open circuit voltage(Voc) of approximately 0.70V and a short-circuit photocurrent(Jsc) of 8 to 12mA/cm2 were observed in the TiO2 solar cell. With increasing RTA temperature upto 550oC, photocurrent density of dye-sensitized solar cells was enhanced, leading to enhancing the efficiency of dye-sensitized solar cells having Pt-electroplated counter electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.28 no.3
• /
• pp.180-184
• /
• 2015

Stainless steel (SS) mesh was used to fabricate photoelectrode for flexible dye-seisitzed solar cells (DSSCs) in order to evaluate them as replacements for more expensive transparent conductive oxide(TCO). We fabricated the DSSCs with new type of photoelectrode, which consisted of flexible SS mesh coated with 100 nm thickness titanium (Ti) protective layer deposited using electron-beam deposition system. SS mesh DSSCs with protective layer showed higher efficiency than those without a protective layer. The best cell property in the present study showed the open circuit voltage (Voc) of 0.608 V, short-circuit current density (Jsc) of $5.73mA\;cm^{-2}$, fill factor (FF) of 65.13%, and efficiency (${\eta}$) of 2.44%. Compared with SS mesh based on DSSCs (1.66%), solar conversion of SS mesh based on DSSCs with protective layer improved about 47%.

• 한국신재생에너지학회:학술대회논문집
• /
• 2007.11a
• /
• pp.278-280
• /
• 2007

a-Si:H/${\mu}$c-Si:H 적층형 태양전지의 효율향상을 위해 상부전지와 하부전지간의 접합특성은 매우 중요하다. 본 연구에서는, 접합특성을 향상하기 위하여 아몰퍼스 보다 전도도가 높은 마이크로화된 n층 또는 ZnO:Al을 중간층으로 삽입한 태양전지를 제조하였으며, 그 특성을 전기적, 광학적 방법으로 분석하였다. 전기적 특성에서, 상부전지 n층에 아몰퍼스를 적용한 태양전지의 경우, 상부전지와 하부전지 간의 직렬저항이 $500{\Omega}-cm^2$ 이상으로 높게 측정되었고, 이에 따라 AM 1.5 상태의 I-V 특성에서 비틀림 현상이 발생하여 곡선인자(Fill Factor : FF)가 낮게 측정되었다. 이에 반하여, 상부전지 n층에 마이크로층을 적용하거나, ZnO:Al 중간층을 삽입한 시편의 경우, 상부전지와 하부전지간의 직렬저항이 $1{\Omega}-cm^2$ 이하로 감소하였으며, 이와 같은 계면간의 접합특성 향상으로 I-V특성에서 비틀림 현상이 사라지고, FF가 70% 까지 증가하였다. 또한, 마이크로층과 ZnO:Al 중간층을 동시에 적용한 태양전지의 경우, FF가 75%까지 가장 높게 증가하였다. 광학적 특성의 경우, 같은 두께의 아몰퍼스 n층에 비하여 마이크로 n층이 투과도는 더 높게, 반사도는 낮게 측정되었으며, 이는 하부전지의 단락전류 (Short circuit current : Jsc)를 높여줄 것으로 판단된다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 2003.04a
• /
• pp.123-126
• /
• 2003

Recently, there is a growing concern on the photovoltaic effects using organic materials. This is a phenomena which converts the solar energy into the electrical one. We have fabricated a device structure of $ITO/PEDOT:PSS/CuPc/C_{60}/BCP/AI$. The PEDOT:PSS layer is made by spin coating, and the other organic layers are made by thermal vapor deposition. By measuring the current-voltage characteristics with an illumination of light, we have obtained value of Voc=0.38V, Jsc=$0.5mA/cm^{2}$. And a fill factor and efficiency are about 0.314 and 0.083%, respectively. A 500W xenon lamp(ORIEL) is used for a light source, and the light intensity illuminated into the device was about 10mW.

• Proceedings of the KIEE Conference
• /
• 2005.11a
• /
• pp.93-95
• /
• 2005

VASIMR (Variable Specific Impulse Magnetoplasma Rocket: JSC, NASA)의 개념을 바탕으로 하는 K2H (KBSI-KAIST-Hanyang University)라고 이름 붙여진 우주 추진체 모사장치 (Space Propulsion Simulator)를 개발하였다. 이 장치는 헬리콘 플라즈마 소스, 이온 가열부 (ICRH: Ion Cyclotron Resonance Heating), 자기노즐 부분으로 이루어져 있다. 헬리콘 플라즈마 소스는 m=+1 형태의 Right-helical 안테나를 사용하여 발생하였다. 본 연구에서는 K2H 장치의 기본적인 설계 개념 및 초기에 발생한 헬리콘 플라즈마의 물성을 RF 보상탐침을 이용하여 측정하였다. 그 결과 900 W, 13.56 MHz rf파워를 사용하여, 아르곤 7 mTorr하에서 전자밀도 = $10^{12}-10^{13}cm-3$, 전자온도 = 4-6 eV의 헬리콘 플라즈마를 안정적으로 발생시켰다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
• /
• v.27 no.1
• /
• pp.33-38
• /
• 2014

In this work, according to temperature and time of hydrothermal synthesis, the electrochemical properties of $TiO_2$ particle using TTIP based on changing temperature and time in the hydrothermal synthesis were analyzed and optimized temperature and time were derived. When hydrothermal synthesis temperature and time were $200^{\circ}C$ and 1 h, respectively. The fabricated DSSC delivered the best electrochemical properties. In that case, $TiO_2$ particle size was 13.08 nm, electron transport time was $2.34{\times}10^{-3}s$ and recombination time was $4.01{\times}10^{-2}s$. The lowest impedance of $13.52{\Omega}$ and Voc, Jsc, FF is 0.70 V, $1.50mAcm^{-2}$, 65.62%, respectively and corresponding efficiency of 5.34% was considered as the optimal.

• Proceedings of the Korean Vacuum Society Conference
• /
• 2010.08a
• /
• pp.319-319
• /
• 2010

칼코젠계 태양전지의 광흡수층으로 사용되는 CuInSe2은 직접천이형 반도체로 광흡수계수가 $1{\times}105cm-1$로 매우 높고, 전기광학적 안정성이 우수하여 실리콘 결정질 태양전지를 대체할 고효율 태양전지로 각광받고 있다. 광흡수층의 밴드갭 에너지가 증가하면 태양전지의 개방전압(Voc)이 증가하여 광변환 효율을 향상시킬 수 있으므로, CuInSe2에서 In의 일부를 Ga으로 치환하여 에너지 밴드갭의 변화를 주는 연구가 많이 진행되고 있다. 그러나 화합물내의 Ga 조성비가 증가하면 단락전류(Jsc), 충진률(fill factor)이 낮아져 태양전지 효율을 저하시키게 되므로 CIGS 박막의 적절한 화합물 조성비를 갖도록 최적조건을 확립하는 것이 매우 중요하다. 본 실험에서는 광흡수층 형성을 위해 Sputtering법으로 금속 전구체를 증착하고, 고온에서 셀렌화 열처리를 수행하는 Sequential process(2단계 증착법)를 이용하였다. soda-lime glass 기판에 Back contact으로 Mo를 증착하고, 1단계로 CuIn0.7Ga0.3 조성비의 타겟을 이용하여 Sputtering법으로 $0.5{\sim}2{\mu}m$ 두께의 CIG 전구체를 증착하였다. 2단계로 CIG 전구체의 셀렌화열처리를 통하여 CIGS 화합물 구조의 박막을 형성시켰다. 이때 형성된 CIGS 화합물 박막의 두께는 동일하게 함으로써, 열처리온도에 의한 박막의 구조변화를 비교하였다. 증착된 CIGS 박막은 고온 엑스선회절분석을 통해 증착 두께와 온도 변화에 따른 CIGS 층의 구조 변화를 확인하고, 동일한 증착조건으로 Buffer layer, Window layer, Grid 전극을 형성하여 태양전지셀 특성을 평가함으로써 CIGS 태양전지 광흡수층의 결정구조에 따른 광변환 효율을 비교하였다.