• 제목/요약/키워드: Jarvis Method

검색결과 3건 처리시간 0.018초

오차 확산 방법의 절삭 오차 문제 (Truncation Error Problem of Error Diffusion Method)

  • 조청운
    • 한국항행학회논문지
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    • 제15권5호
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    • pp.850-856
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    • 2011
  • 오차 확산 방법은 디지털 하프토닝 방법 중 하나로 현재 처리하는 픽셀의 양자화 오차를 아직 처리하지 않은 주변 이웃 화소에 확산시켜 변환된 흑백 영상의 품질을 높이는 방법이다. 이러한 방법은 발생한 양자화 오차를 주변으로 분산하는 과정에서 부분적으로 오차의 합이 증가하거나 감소하는 경우가 발생하게 된다. 본 논문에서는 오차 확산의 대표적인 방법인 Floyd-Steinberg 방법과 Jarvis-Judice-Ninke의 방법, Stucki의 방법, Shiau-Fan의 방법을 분석하고 이에 대한 해결 방법을 제시한다.

Methane Emission Patterns from Stored Liquid Swine Manure

  • Park, Kyu-Hyun;Wagner-Riddle, Claudia
    • Asian-Australasian Journal of Animal Sciences
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    • 제23권9호
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    • pp.1229-1235
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    • 2010
  • With the increase of human activities since the Industrial Revolution, atmospheric greenhouse gas (GHG) concentration has increased, which is believed the cause of climate change. Methane ($CH_4$) fluxes were measured at two commercial swine barns (Jarvis and Guelph) with a four tower micrometeorological mass balance method. Two and three separate measurements were conducted at Jarvis and at Guelph, respectively. In the Jarvis experiments from May to July, mean $CH_4$ flux ($490.4{\mu}g/m^2/s$) during daytime was lower than that during nighttime ($678.0{\mu}g/m^2/s$) (p<0.05), which would be caused by break of slurry temperature stratification. In the Guelph experiment from January to April, mean $CH_4$ flux ($62.9{\mu}g/m^2/s$) during daytime was higher than that during nighttime ($39.0{\mu}g/m^2/s$) (p<0.05), which would be generated by high slurry temperature at 3 cm depth after April 6. Slurry temperature stratification in the Guelph experiment would happen from January to March.

질화규소 재료의 고온 유전물성 평가 (High Temperature Dielectric Properties of Silicon Nitride Materials)

  • 최두현
    • 한국군사과학기술학회지
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    • 제10권3호
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    • pp.114-119
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    • 2007
  • Dielectric properties of quartz glass and $Si_3N_4$ are investigated using the waveguide method from room temperature to $800^{\circ}C$. For the case of dielectric constant, $Si_3N_4$ showed similar increase with quartz glass up to $300^{\circ}C$, but less increase from $300^{\circ}C$ to $800^{\circ}C$. For the case of loss tangent, those showed gradual increase with temperature except of some temperature points. The loss tangent of $Si_3N_4$ and quartz glass increased up to 18.2% and 12.5% respectively. Through these researches, high temperature dielectric properties of silicon nitride materials are characterized.