• Nuclear Engineering and Technology
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• v.56 no.7
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• pp.2444-2451
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• 2024

This work demonstrates a new sol-gel approach for synthesizing PbO₂-doped zirconia using zircon mineral precursors. The streamlined methodology enables straightforward fabrication of the doped zirconia composites. Comprehensive materials characterization was performed using XRD, SEM, and TEM techniques to analyze the crystal structure, microstructure, and morphology. Quantitative analysis of the XRD data provided insights into the nanoscale crystallite sizes achieved, along with their relationship to lattice imperfections. Furthermore, the gamma-ray shielding capacity for the PbO₂-doped zirconia samples was estimated by the Monte Carlo simulation, which proves an increase in the gamma ray shielding properties by raising the Pb concentration. The linear attenuation coefficient increased between 0.467 and 0.499 cm^-1 (at 0.662 MeV) by increasing the Pb content between 11 and 21 wt%. By increasing the Pb content to 21 wt%, the synthesized composites' lead equivalent thickness reaches 2.49 cm. The radiation shielding properties for the synthesized composites revealed a remarkable performance against low and intermediate γ-ray photons, with radiation shielding capacity of 37.3 % and 21.4 % at 0.662 MeV and 2.506 MeV, respectively. As a result, the developed composites can be employed as an alternative shielding material in hospitals and radioactive zones.

• Journal of Institute of Control, Robotics and Systems
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• v.9 no.5
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• pp.398-406
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• 2003

In modular fixturing systems, a given part or a subassembly is fixed by placing fixture elements such as locators and clamps adequately on a plate with a lattice of holes. It is known that the minimal number of point contacts to restrict translational and rotational motions on a plane is four and the type of three locators and a clamp(3L/1C) is the minimal future. Brost and Goldberg developed the complete algorithm to automatically synthesize 3L/1C types of fixtures which satisfy the condition of form closure. Due to the nature of the fixture, the clearance between the fixture and the part is extremely small. It is hard to load the part repeatedly and accurately for human as well as for robot. However the condition of loadability has not been taken into account in the B&G algorithm. In this paper, a new method to decide a given fixture to be loadable by using configuration space is proposed. A method to plan for a part to be loaded by using compliance safely even in the presence of control and sensing uncertainty is proposed is well.

• Nuclear Engineering and Technology
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• v.49 no.7
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• pp.1379-1387
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• 2017

This paper presents a comparison of homogenization techniques implemented in the APOLLO3 platform for transport core calculations: standard scalar flux weighting and new flux-moment homogenization, in different combinations with (or without) leakage models. Besides the historical B1-homogeneous model, a new B-heterogeneous one has indeed been implemented recently in the two/three-dimensional-transport solver using the method of characteristics. First analyses have been performed on a very simple Sodium Fast Reactor core with a regular hexagonal lattice. They show that using the heterogeneous leakage model in association with flux-moment homogenization strongly improves the prediction of $k_{eff}$ and void reactivity effects. These good results are confirmed when the application is done to the fissile assemblies of the more complex CFV (Low Void Effect) core of the ASTRID (Advanced Sodium Technological Reactor for Industrial Demonstration) project of sodium-cooled fast breeder reactor (Generation IV).

• Journal of Power System Engineering
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• v.13 no.6
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• pp.63-69
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• 2009

The experiment was performed to check operating characteristics of fouling auto removal apparatus for multi pass type heat exchanger using ejector. The results showed as following. The ejector suction flow rate increased with the head of operating pump of ejector. Proper suction flow rate showed $7.2{\sim}10.2m^3/h$ for ball collection in case of pump head 35~50m. The head of ejector outlet pipe is below 4.1m in case of 40m, the head of operating pump of ejector to confirm ejector suction flow rate 8.4m3/h. Lattice space of ball separator is allowed 6~10.3mm in ranges of ball diameter are 15~25mm and when mass flow of cooling water is 3.0m/sec. Average of passing time of balls is 1.2~2.8sec depend on the velocity of flow and the size of balls.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.9-9
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• 2009

1 wt % Ga-dope ZnO (ZnO:Ga) thin films with n-type semiconducting behavior were grown on c-sapphire substrates by radio frequency magnetron sputtering at various growth temperatures. The room temperature grown ZnO:Ga film showed the faint preferred orientation behavior along the c-axis with small domain size and high density of stacking faults, despite limited surface diffusion of the deposited atoms. The increase in the growth temperature in the range between $300\sim550^{\circ}C$ led to the granular shape of epitaxial ZnO:Ga films due to not enough thermal energy and large lattice mismatch. The growth temperature above $550^{\circ}C$ induced the quite flat surface and the simultaneous improvement of electrical carrier concentration and carrier mobility, $6.3\;\times\;10^{18}/cm^3$ and $27\;cm^2/Vs$, respectively. In addition, the increase in the grain size and the decrease in the dislocation density were observed in the high temperature grown films. The low-temperature photoluminescence of the ZnO:Ga films grown below $450^{\circ}C$ showed the redshift of deep-level emission, which was due to the transition from $Zn_j$ to $O_i$ level.

• Journal of the Korean Vacuum Society
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• v.4 no.S1
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• pp.168-173
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• 1995

$GaxIn{1_x}As$ epitaxial layers were grown by a simplified hydrode vapor phase epitaxy(VPE) method bsed on the utilization of Ga/In alloy as the source metal. The effects of a wide range of experimental variables(i.e.,inlet mole fraction of HCI, deposition temperature, Ga/In alloy composition) on the ternary composition and growth rate were investigated. Layers of $Ga_{0.47}In_{0.53}As$ lattice matched to InP were successfully grown from alloys containing 5 to 8 at.% Ga. These layers were used to produce state-of-the art p-i-n photodetectors having the following characteristics: dark current, $I_d$(-5V) = 10-20 nA: responsivity, R=0.84-0.86 A/W; dark current, Id(-5V)=10-20 nA; responsivity, R=0.84-0.86 A/W; capacitance, C=0.88-0.92 pF; breakdown voltage, $V_b$ >40V. This study demonstrated for the first time that a simplified hydride VPE process with a Ga/In alloy source is capable of producing device quality epitaxial layers.

• Journal of Powder Materials
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• v.19 no.2
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• pp.134-139
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• 2012

P/M coppers are subjected to the isothermal compression tests at the strain rate ranging from 0.01 to 10.0 $s^{-1}$ and the temperature from 200 to $800^{\circ}C$. The processing map reveals the dynamic recrystallization (DRX) domain in the following temperature and strain rate ranges: $600-800^{\circ}C$ and 0.01-10.0 $s^{-1}$, respectively. In the domain, the region at temperature of $600^{\circ}C$ and strain rate of $10^{-2}s^{-1}$ shows peak efficiency. From the kinetic analysis, the apparent activation energy in the DRX domain is 190.67 kJ/mol and it suggests that lattice self-diffusion is the rate controlling mechanism.

• Proceedings of the KIEE Conference
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• 2008.10a
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• pp.171-172
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• 2008

$(Ba_{0.57}Sr_{0.33}Ca_{0.10})TiO_3$ (BSCT) thick films doped with 0.1 mol% $MnCO_3$ and $Yb_2O_3$ ($0.1{\sim}0.7$ mol%) were fabricated by the screen printing method on the alumina substrate. And the structural and electrical properties as a function of $Yb_2O_3$ amount were investigated. The lattice constants of the BSCT thick film doped with 0.1 mol% is 0.3955 nm. The specimen doped with 0.7 mol% $Yb_2O_3$ showed dense and uniform grains with diameters of about 6.3 mm. The thickness of all BSCT thick films was approximately 60 mm. The Curie temperature of the BSCT specimen doped with 0.1 mol% $Yb_2O_3$ was $18^{\circ}C$, and the dielectric constantand dielectric loss at this temperature was 4637 and 4.2%, respectively. The BSCT specimen doped with 0.1 mol% $Yb_2O_3$ showed the maximum value of $349{\times}10^{-9}C/cm^2K$ at Curie temperature. The figure of merit $F_D$ for specific detectivity of the specimens doped with 0.1 mol% $Yb_2O_3$ showed the highest value of $10.9{\times}10^{-9}Ccm/J$.

• Journal of Powder Materials
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• v.11 no.4
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• pp.322-327
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• 2004

Ultrafine titanium carbide particles were synthesized by the reaction of liquid-magnesium and vaporized TiCl$_{4}$+C$_{x}$Cl$_{4}$(x = 1 and 2) solution. Fine titanium carbide particles with about 50 nm were successfully produced by combining Ti and C atoms released by chloride reduction of magnesium, and vacuum was then used to remove the residual phases of MgCl$_{2}$ and excess Mg. Small amounts of impurities such as O, Fe, Mg and Cl were detected in the product, but such problem can be solved by more precise process control. The lattice parameter of the product was 0.43267 nm, near the standard value. With respect to the reaction kinetics, the activation energy for the reactions of TiCl$_{4}$+C$_{2}$Cl$_{4}$and Mg was found to 69 kJ/mole, which was about half value against the use of TiCl$_{4}$+CCl$_{4}$, and such higher reactivity of the former contributed to increase the stoichiometry until the level of TiC$_{0.96}$ and decrease the free carbon content below 0.3 wt.%.

• Journal of the Korean Magnetic Resonance Society
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• v.14 no.2
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• pp.134-143
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• 2010

We studied the hydrogen-bonded $TlH_2PO_4$ (TDP) ferroelectrics treated with the proton-beam bombardment. The TDP material was irradiated with 1-MeV proton beam at a dose of $10^{15}/cm^2$. In order to analyze the hydrogen environment in TDP, we carried out the $^1H$ high resolution nuclear magnetic resonance (NMR) - i.e., Combined Rotation And Multiple Pulse Spectroscopy (CRAMPS) measurement. The isotropic chemical shift of hydrogen indicates its displacive property is related to the $PO_4$ lattice deformation which occurs throughout the antiferroelectric-, the ferroelastic- and the paraelastic-phase transitions. The temperature dependence of $\sigma_{iso}$ reveals the electronic charge redistribution is induced by the proton-beam irradiation and the elastic property.