• 제목/요약/키워드: J-V characteristics

검색결과 719건 처리시간 0.048초

Tris(2-cyclohexylaminoethyl)amine-Zn(II) 착물의 안정성 (Stability of Tris(2-cyclohexylaminoethyl)amine-Zn(II) Complex)

  • 신용운;백현숙;양재경;김진은;서무룡
    • 대한화학회지
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    • 제47권2호
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    • pp.121-126
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    • 2003
  • Cyclohexanone,과 tris(2-aminoethyl)amine을 이용하여 Schiff 연기 축합반응으로 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)을 합성하였다. 또한 합성한 tren의 유도체인 tris(2-cyclohexylaminoethyl)amine (L)과 Zn(II) 착물의 열역학적 특성과 안정도 상수, Zn(II)와의 착물 조성비 등을 순환전압전류법과 열량계법으로 측정하였다. Zn(II)과 [Zn(II)-L] 순환전압전류 곡선을 0${sim}$-1.5 V vs. Ag/AgCl의 가전압 범위에서 측정하였다. 금속인 경우, -1.02V와 -0.48V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났으며, 금속착물인 경우에는 -1.19V와 -0.45V vs. Ag/AgCl에서 각각 환원피이크와 산화피이크가 나타났다. 또한 피이크 전류(IP)는 주사속도의 평방근 $(v^{1/2})$에 비례하였으며 이것은 전류의 유형이 확산 지배적인 전류임을 나타낸다. 그리고 [Zn-L] 착물에 대해서 전압전류법적으로 구한 안정도상수는 logK$_f$ = 5.8, 결합비는 1:1을 나타내었다. 또한 열량계법적으로 [Zn-L] 착물의 열역학적 파라메타를 조사한 결과, 리간드 L과 Zn(II)는 1:1의 4 배위수를 가지는 착물을 이룬다는 것을 알 수 있었고, 이때 25 ${\circ}$C에서 logK=5.4, ${\Delta}H$= -53.0 kJ/mol, ${\Delta}$G의 값은 -31.1 kJ/mol이었으며 T${\Delta}$S는 -21.9 J/K${\cdot}$mole이었다.

플라즈마 디스플레이 판넬의 제작 및 특성 연구 (A Study on the Fabrication of Plasma Display Panel and It's Characteristics)

  • 김준식;최경철;신범재;황기웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1990년도 추계학술대회 논문집 학회본부
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    • pp.157-160
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    • 1990
  • A dot matrix type DC Plasma Display Panel was fabricated and it's characteristics was investigated. Paschen curve and I-V curve of various gas mixture was given. Optimal gas mixing ratio, pressure and operating point was determined. The priming effect was observed and discharge delay time was measured with varing applied voltage, priming current, priming distance, duty ratio.

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Li/$V_6O_{13}$ 2차전지의 제조 및 특성 (Preparation and Characteristics of Li/$V_6O_{13}$ Secondary Battery)

  • 문성인;정의덕;도칠훈;윤문수;염덕형;정목윤;박천준;윤성규
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 1992년도 추계학술대회 논문집
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    • pp.136-140
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    • 1992
  • The purpose of this research is to develop the lithium secondary battery. This paper describes the preparation, electrochemical properties of nontstoichiometric(NS)-$V_6O_{13}$ and characteristics of Li/$V_6O_{13}$ secondary battery. NS-$V_6O_{13}$ was prepared by thermal decomposition of $NH_4VO_3$ under Ar stream of 140ml/min~180ml/min flow rate. And then, this NS-$V_6O_{13}$ was used for cathode active material. Cathode sheet was prepared by compressing the composite of NS-$V_6O_{13}$, acetylene black(A.B) and teflon emulsion (T.E). Characteristics of the test cell are summarised as follows. Oxidation capacity of NS-$V_6O_{13}$ was about 20% less than its reduction capacity. A part of NS-$V_6O_{13}$ cathode active material showed irreversible reaction in early charge-discharge cycle. This phenomena seems to be caused by irreversible incoporation/discoporation of lithium cation to/from NS-$V_6O_{13}$ host. Discharge characteristics curve of Li/$V_6O_{13}$ cell showed 4 potential plateaus. Charge-discharge capacity was declined in the beginning of cycling and slowly increased in company with increasing of coulombic efficiency. Energy density per weight of $V_6O_{13}$ cathode material was as high as 522Wh/kg~765Wh/kg.

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High energy swift heavy ion irradiation and annealing effects on DC electrical characteristics of 200 GHz SiGe HBTs

  • Hegde, Vinayakprasanna N.;Praveen, K.C.;Pradeep, T.M.;Pushpa, N.;Cressler, John D.;Tripathi, Ambuj;Asokan, K.;Prakash, A.P. Gnana
    • Nuclear Engineering and Technology
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    • 제51권5호
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    • pp.1428-1435
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    • 2019
  • The total ionizing dose (TID) and non ionizing energy loss (NIEL) effects of 100 MeV phosphorous ($P^{7+}$) and 80 MeV nitrogen ($N^{6+}$) ions on 200 GHz silicon-germanium heterojunction bipolar transistors (SiGe HBTs) were examined in the total dose range from 1 to 100 Mrad(Si). The in-situ I-V characteristics like Gummel characteristics, excess base current (${\Delta}I_B$), net oxide trapped charge ($N_{OX}$), current gain ($h_{FE}$), avalanche multiplication (M-1), neutral base recombination (NBR) and output characteristics ($I_C-V_{CE}$) were analysed before and after irradiation. The significant degradation in device parameters was observed after $100MeV\;P^{7+}$ and $80MeV\;N^{6+}$ ion irradiation. The $100MeV\;P^{7+}$ ions create more damage in the SiGe HBT structure and in turn degrade the electrical characteristics of SiGe HBTs more when compared to $80MeV\;N^{6+}$. The SiGe HBTs irradiated up to 100 Mrad of total dose were annealed from $50^{\circ}C$ to $400^{\circ}C$ in different steps for 30 min duration in order to study the recovery of electrical characteristics. The recovery factors (RFs) are employed to analyse the contribution of room temperature and isochronal annealing in total recovery.

Simple fabrication process and characteristic of a screen-printed triode-CNT field emission arrays for the flat lamp application

  • Jung, Y.J.;Park, J.H.;Jeon, S.Y.;Park, S.J.;Alegaonkar, P.S.;Yoo, J.B.;Park, C.Y.
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2006년도 6th International Meeting on Information Display
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    • pp.1214-1218
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    • 2006
  • We introduced simple fabrication process for field emission devices based on carbon nanotubes (CNTs) emitters. Instead of using the ITO material as a transparent electrode, a metal (Au) with thickness of 5-20nm was used. Moreover, the ITO patterning process was eliminated by depositing metal layer, before the CNT printing process. In addition, the thin metal layer on photo resist (PR) layer was used as UV block. We fabricated the CNT field emission arrays of triode structure with simple process. And I-V characteristics of field emission arrays were measured. The maximum current density of $254{\mu}A/cm2$ was achieved when the gate and the anode voltage was kept 150V and 3000V, respectively. The distance between anode and cathode was kept constant.

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RF 스퍼터링법에 의한 $(Sr_{0.85}Ca_{0.15})TiO_3$ 박막의 전압-전류 특성 (V-I Characteristics of $(Sr_{0.85}Ca_{0.15})TiO_3$ Thin Film by RF Sputtering Method)

  • 김진사;조춘남;신철기;최운식;김충혁;이준웅
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2000년도 춘계학술대회 논문집 전자세라믹스 센서 및 박막재료 반도체재료 일렉트렛트 및 응용기술
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    • pp.88-91
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    • 2000
  • The $(Sr_{0.85}Ca_{0.15})TiO_3$(SCT) thin films are deposited on Pt-coated electrode(Pt/TiN/$SiO_2$/Si) using RF sputtering method. The crystallinity of SCT thin films is increased with increase of substrate temperature in the temperature range of 200~500$[^{\circ}C]$. V-I characteristics of SCT thin films show the increasing leakage current with the increases of deposition temperature. The conduction mechanism of the SCT thin films observed in the temperature range of 25~100$[^{\circ}C]$ can be divided into four characteristic regions with different mechanism by the increasing current.

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Ti-6Al-4V 합금의 선삭가공시 칩처리성에 관한 연구 (A Study on the Chip Treatment of Ti-6Al-4V Alloy in Turning processing)

  • 박종남;이승철;조규재
    • 한국정밀공학회:학술대회논문집
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    • 한국정밀공학회 2005년도 춘계학술대회 논문집
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    • pp.1551-1554
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    • 2005
  • The Titanium has many superior characteristics Which are specific strength, heat resistance, corrosion resistance, organism compatibility, non-magnetic and etc. and their quantity are abundant. this study performed turning operation of Ti-6Al-4V alloy using the TiAlN Coate Tool which treated PVD (Physical Vapor Deposition). Experimental works are also executed to measure cutting force, chip figuration and surface roughness for different cutting conditions. As a result of study. Tool wear was serious at over 100m/min of cutting speed and cutting condition was excellent at 1.0mm of cutting depth.

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ITO 박막의 제작 조건에 따른 OLED의 I-V 특성 (I-V properties of OLED with deposition conditions of ITO thin films)

  • 금민종;김현웅;조범진;김한기;김경환
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.434-435
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    • 2005
  • In this work, the ITO thin films were prepared by FTS (Facing Targets Sputtering) system under different sputtering conditions which were varying $O_2$ gas flow, input current and working gas pressure. As a function of sputtering conditions, electrical and optical properties of prepared ITO thin films were measured. The electrical characteristics, surface roughness and transmittance of the ITO thin films were evaluated by Hall Effect Measurement, AFM, and UV-VIS spectrometer respectively. In addition, I-V properties of OLED cells were measured by 4156A(HP).

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$CuInTe_2$ 단결정 성장과 특성연구(II) (Study on $CuInTe_2$ Single Crystals Growth and Characteristics (II))

  • 유상하;홍광준;이상렬;신용진;이관교;서상석;김승욱;정준우;신영진;정태수;신현길;김택성;문종대
    • 한국결정학회지
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    • 제8권1호
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    • pp.48-58
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    • 1997
  • [ $CuInTe_2$ ] 다결정은 수평전기로에서 합성하고, $CuInTe_2$ 단결정은 수직 Bridgman 방법으로 성장시켰다. $CuInTe_2$ 단결정의 c축에 수직 및 평행한 시료의 광전도도와 광발광특성을 293K에서 20 K의 온도영역에서 측정하였다. 측정된 광전류 봉우리로부터 구한 c축에 수직 및 평행한 시료의 에너지 띠 간격은 상온에서 각각 0.948 eV와 0.952 eV였다. 광전류 봉우리와 광발광 봉우리의 에너지차는 포논에너지이며 상온에서 c축에 수직 및 평행한 시료의 에너지차는 각각 22.12 meV와 21.4 meV였다. 또한 광전류 스펙트럼으로부터 시료의 spin-orbit 상호작용과 결정장 상호작용에 의한 가전자대의 갈라짐 ${\Delta}cr$${\Delta}so$는 각각 0.046, 0.014 eV였다.

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경사 외부자장에 대한 600 kJ급 SMES용 HTS도체의 DC V-I 특성 (DC V-I Characteristics of a High Temperature Superconductor for a 600 kJ Superconducting Magnetic Energy Storage Device in an Oblique External Magnetic Field)

  • 이주영;마용호;류경우;최세용;김해종
    • 한국전기전자재료학회논문지
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    • 제21권1호
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    • pp.79-84
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    • 2008
  • We are developing a small-sized high temperature superconducting magnetic energy storage (HTS-SMES) magnet with the nominal storage capacity of 600 kJ, which provides electric power with high quality to sensitive electric loads. Critical current and N-value of a high temperature superconductor with large current, which was selected for the development of the 600 kJ HTS-SMES magnet, were investigated in various oblique external magnetic fields. Based on the critical current and N-value measured for the short sample conductor, we discussed the DC V - I characteristic of a model coil fabricated with the same conductor of 500 m. The results show that the measured critical current and N-value of the conductor for parallel field are constant in external magnetic fields less than about 0.2 T. However, for oblique fields, its critical current and N -value abruptly decrease in all external magnetic fields. Moreover, the measured critical current of the model coil well agrees with the numerically calculated one based on the DC V - I characteristic measured for the short sample conductor. This suggest that losses and critical currents for an HTS-SMES magnet made up of a high temperature superconductor with anisotropic characteristic are predictable from the data of a short sample conductor.