• 제목/요약/키워드: J-V characteristics

검색결과 719건 처리시간 0.044초

Derivation of Current-Voltage Equation for OLED using Device Simulation

  • Lee, Sang-Gun;Hattori, Reiji
    • 한국정보디스플레이학회:학술대회논문집
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    • 한국정보디스플레이학회 2009년도 9th International Meeting on Information Display
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    • pp.1212-1215
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    • 2009
  • The theoretical equations for J-V characteristics in an OLED was derived according to the internal carrier emission equation based on a diffusion model at Schottky barrier contact and the mobility equation based on the Pool-Frenkel model. The J-V characteristics of OLED are presented using a behavioral model for analog systems (Verilog-A language), and the accuracy of this model was verified by comparing with the device simulation results.

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1,200V 급 Trench Gate Field stop IGBT 공정변수에 따른 스위칭 특성 연구 (A Study on Switching Characteristics of 1,200V Trench Gate Field stop IGBT Process Variables)

  • 조창현;김대희;안병섭;강이구
    • 전기전자학회논문지
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    • 제25권2호
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    • pp.350-355
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    • 2021
  • IGBT는 MOSFET과 BJT의 구조를 동시에 포함하고 있는 전력반도체 소자이며, MOSFET의 빠른 스위칭 속도와 BJT의 고 내압, 높은 전류내량 특성을 갖고 있다. GBT는 높은 항복전압, 낮은 VCE-SAT, 빠른 스위칭 속도, 고 신뢰성의 이상적인 파워 반도체 소자의 요구사항을 목표로 하는 소자이다. 본 논문에서는 1,200V 급 Trench Gate Field Stop IGBT의 상단 공정 파라미터인 Gate oxide thickness, Trench Gate Width, P+ Emitter width를 변화시키면서 변화하는 Eoff, VCE-SAT을 분석하였고, 이에 따른 최적의 상단 공정 파라미터를 제시하였다. Synopsys T-CAD Simulator를 통해 항복전압 1,470V와 VCE-SAT 2.17V, Eon 0.361mJ, Eoff 1.152mJ의 전기적 특성을 갖는 IGBT 소자를 구현하였다.

Dehydrodivanillin: Multi-dimensional NMR Spectral Studies, Surface Morphology and Electrical Characteristics of Thin Films

  • Gaur, Manoj;Lohani, Jaya;Balakrishnan, V.R.;Raghunathan, P.;Eswaran, S.V.
    • Bulletin of the Korean Chemical Society
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    • 제30권12호
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    • pp.2895-2898
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    • 2009
  • The complete structural characterization of dehydrodivanillin, an important natural product of interest to the food, cosmetics and aroma industries, has been carried out using multi-dimensional NMR spectroscopic techniques, and its previously $reported^{13}$C-NMR values have been reassigned. Dense and granular thin films of dehydrodivanillin have been grown by sublimation under high vacuum and studied using Scanning Electron Microscopy (SEM), electrical and optical techniques. The transmittance spectra of the films indicate a wide optical band gap of more than 3 eV. Typical J-V characteristics of Glass/ITO/dehydrodivanillin/Al structure exhibited moderate current densities ${\sim}10^{-4}\;A/cm^2$ at voltages > 25 V with an appreciable SCLC mobility of the order of $10^{-6}\;cm^2$/V-s.

1.5Cr-0.67Mo-0.33V강의 열피로 크랙전파 거동 (Thermo-Mechanical Fatigue Crack Propagation Behaviors of 1.5Cr-0.67Mo-0.33V Alloy)

  • 송삼홍;강명수
    • 대한기계학회논문집
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    • 제19권9호
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    • pp.2133-2141
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    • 1995
  • The thermo-mechanical fatigue tests were performed on the specimens extracted from 1.5Cr-0. 67Mo-0.33V alloy. The characteristics of thermo-mechanical fatigue crack propagation were examined and reviewed in view of fracture mechanics. The results obtained from the present study are summarized as follows : (1) The propagation characteristics of isothermal low-cycle fatigue crack are dominated by .DELTA.J$_{f}$ in case of PP waveform, and .DELTA.J$_{c}$ in case of CP waveform. (II)The propagation characteristics of thermo-mechanical fatigue crack are dominated by .DELTA.J$_{c}$ for in-phase case, and by .DELTA.J$_{c}$ for out-of-phase. The present results were in good agreement with the equation of propagation law for isothermal low-cycle fatigue crack in case of thermo-mechanical fatigue.tigue.e.

ITO/PTFE/Al 소자에서 PTFE 박막의 두께에 따른 전압-전류(I-V) 특성 (Current-Voltage(I-V) Characteristics of ITO/PTFE/Al device with a variation of PTFE thickness)

  • 정준;오용철;신종열;이수원;홍진웅
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2003년도 하계학술대회 논문집 C
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    • pp.1568-1570
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    • 2003
  • We have studied the I-V characteristics of polytetrafluoroethylene(PTFE) thin film depending on a variation of thickness. Polymer PTFE buffer layer was made using thermal evaporation technique. The device was made in the structure of ITO/PTFE/Al. We have observed the NDR(negative differential resistance) behavior between 2.5V and 5V. There are some reports on this NDR behavior in the polymer thin film[1]. We have studied the NDR behavior depending on a variation thickness. As the film thickness increased, The NDR behavior decreased and moved in low electrical field, and we have studied the conduction mechanism of PTFE thin film.

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미소 원공결함을 갖는 Cr-Mo-V강의 고온피로 크랙전파거동 (A Study on the Fatigue Crack Propagation Behavior of Cr-Mo-V Alloy with Micro Defects at High Temperature.)

  • 송삼홍;강명수
    • 한국정밀공학회지
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    • 제13권12호
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    • pp.70-77
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    • 1996
  • Fatigue tests were carried out at high temperature on a Cr-Mo-V steel in order to assess the fatigue life of components used in power plants. The characteristics of high temperature fatigue were divided in terms of cycle-dependent fatigue and time-dependent fatigue, each crack propagation rate was examined with respect to fatigue J-integral range, .DELTA. J$_{f}$and creep J-integral range, .DELTA. J$_{c}$. The fatigue life was evaluated by analysis of J-integral value at the crack tip with a dimensional finite element method. The results obtained from the present study are summarized as follows : The propagation characteristics of high temperature fatigue cracks are determined by .DELTA. J$_{f}$for the PP(tensile plasticity-compressive plasticity deformation) and PC(tensile plasticity - compressive creep deformation) stress waveform types, and by .DELTA. J$_{c}$for the CP(tensile creep- compressive plasticity deformation) stress waveform type. The crack propagation law of high temperature fatigue is obtained by analysis of J-integral value at the crack tip using the finite element method and applied to examine crack propagation behavior. The fatigue life is evaluated using the results of analysis by the finite element method. The predicted life and the actual life are close, within a factor of 2.f 2.f 2.

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765kV 계통의 고속도 다상 재폐로 관련 2차 아크 검토 및 억제 방안 (The Evaluation and Countermeasures for the 2nd Arc Reduction for the High Speed Reclosing in 765kV Transmission Line)

  • 안정식;김재영;진중용
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1995년도 하계학술대회 논문집 B
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    • pp.613-615
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    • 1995
  • KEPCO is now going on upgrading the highest system voltage from 345kV to 765kV since 1992. The main reason of this 765kV project is the bulk power transmission from the power generation sites at the East and West coasts to the Kyeong-in area. The first 765kV transmission lines will be constructed by 1998 and operated as 345kV level until 2001. This system needs a detailed evaluation of the 2nd arc in case of 765kV transmission line outages and the countermeasures for the fast arc reduction for the successful high speed reclosing. So, this paper deals with the simulation results of the 2nd arc characteristics using EMTP and comparison of Sh.R and HSGS for the reduction methods.

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765 kV 송전철탑 개폐섬락 특성 (Switching Surge Flashover Characteristics of 765 kV Transmission Towers)

  • 심정운;장성철;곽주식;김정부
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 1996년도 추계학술대회 논문집 학회본부
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    • pp.276-278
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    • 1996
  • The breakdown Process in large gaps is greatly influenced by the gap geometry. Therefor full scale test are essential for the economical and reliable air insulation design. For switching surge design of 765 kV double circuit transmission line KEPRI is carrying the verifying tests using impulse voltage generator at Gochang test site. In this paper, the intermediate results of verifying tests are presented and the switching surge design criteria of 765 kV transmission tower flashover paths are discussed.

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$28 A/cm^2~ 940 A/cm^2$의 임계전류밀도 범위로 제작된 $Nb/Al-AlO_x/Nb$ 터널접합의 전기적 특성 (Electrical Characteristics of $Nb/Al-AlO_x/Nb$ Tunnel Junction fabricated with $I_c$ Values in the Range of $28 A/cm^2~ 940 A/cm^2$)

  • 홍현권;김규태;박세일;김구현;남두우
    • 한국초전도ㆍ저온공학회논문지
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    • 제4권1호
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    • pp.4-7
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    • 2002
  • Samples of $Nb/Al-AlO_x/Nb$ tunnel junction with the size of $50 ${\mu}{\textrm}{m}$ {\times} 50 ${\mu}{\textrm}{m}$$ were fabricated by using self-aligning and reactive ion etching technique In the high quality samples, the $V_m$ value (the product of the critical current and subgap resistance measured at 2 mV) was 34 mV at the critical current density of $J_c: 500 A/cm^2 and the V_g$ value (the gap voltage) was 2.8 mV. For the higher $J_c$ sample, voltage fluctuation at the gap voltage was observed. The $V_m and J_c$ values for this sample were 8 mV and 900 A/cm$^2$, respectively. Also, the relationship between critical current density $J_c$ and specific normal conductance $G_s$ of the junctions with $J_c$ in the range of 28 A/cm$^2$~940 A/cm$^2$was investigated.

에폭시 절연체의 보이드 크기에 따른 부분방전 특성연구 (A Experimental Investigation on the PD Characteristics depending on the various Artificial Voids In Epoxy Insulator)

  • 최철광;이전선;김정태;구자윤
    • 대한전기학회:학술대회논문집
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    • 대한전기학회 2000년도 하계학술대회 논문집 C
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    • pp.1853-1855
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    • 2000
  • An experimental investigation has been performed in order to understand the $\Phi$-q-n characteristics related to the PD taking place from the various size of artificial defects inserted in epoxy insulation. In this purpose, PD has been detected simultaneously by two different methods such as commercialized PD detector(TE571) and our detection system using self designed CT type sensor. Under the presence of void in epoxy insulation, PD has been initiated at the voltages between 16kV and 20kV which are much lower than the dielectric strength of epoxy insulation (130kV/mm$\sim$l50kV/mm). And also it is revealed that $\Phi$-q-n characteristics have been observed to be dependent upon the size of the artificial defects. Throughout this work, the on site applicability of the self designed Sensor has also been proved by comparing the results with those from the commercialized PD detector. And more one, considerable basic data regarding the insulation, diagnosis could be provided to understand the presence of the voids possibly inserted into the epoxy insulation system of the power apparatus.

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